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Journal of Applied Physics / Volume 85 / Issue 2 / CONDENSED MATTER: ELECTRICAL AND MAGNETIC PROPERTIES (PACS 71-76)

J. Appl. Phys. 85, 893 (1999); doi:10.1063/1.369351 (4 pages)

Central-cell corrections for Si and S in GaAs in a strong magnetic field

R. J. Heron1, R. A. Lewis1, P. E. Simmonds1, R. P. Starrett2, A. V. Skougarevsky2, R. G. Clark2, and C. R. Stanley3

1Department of Physics, University of Wollongong, Wollongong, New South Wales 2522, Australia
2School of Physics, University of New South Wales, Kensington, New South Wales 2052, Australia
3Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8TL, United Kingdom

(Received 15 June 1998; accepted 12 September 1998)

The central-cell correction has been determined experimentally for the two donor impurities S and Si in GaAs. Data have been obtained for magnetic fields to 39 T, corresponding to γ≈6. The observed behavior is in good agreement with theory. The analysis permits accurate evaluation of zero-field central-cell corrections, yielding 0.110 and 0.059 meV for S and Si, respectively. © 1999 American Institute of Physics.

© 1999 American Institute of Physics

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KEYWORDS and PACS

Keywords

sulphur, silicon, gallium arsenide, III-V semiconductors, impurity states, photoconductivity, cyclotron resonance, chemical shift, magnetic field effects

PACS

  • 71.55.Eq

    III-V semiconductors

  • 72.40.+w

    Photoconduction and photovoltaic effects

  • 76.40.+b

    Diamagnetic and cyclotron resonances

  • 72.20.My

    Galvanomagnetic and other magnetotransport effects

  • 72.80.Ey

    III-V and II-VI semiconductors

ARTICLE DATA

Permalink
http://link.aip.org/link/doi/10.1063/1.369351

PUBLICATION DATA

ISSN:

0021-8979 (print)  
1089-7550 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

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