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J. Appl. Phys. 85, 8274 (1999); http://dx.doi.org/10.1063/1.370669 (7 pages)

Hot electron effects and dynamic behavior of gold doped germanium thin films as cryogenic phonon sensors

X. X. Wang1, M. Getaneh2, C. J. Martoff3, and E. Kaczanowicz3

1WorldGate Communications, Inc., Bensalem, Pennsylvania 19020
2Department of Physics, Lincoln University, Lincoln, Pennsylvania 19352
3Department of Physics, Temple University, Philadelphia, Pennsylvania 19122

(Received 3 August 1998; accepted 22 February 1999)

As a part of continuing development of thin film Ge1−xAux thermistors for ultralow mass highly sensitive cryogenic phonon sensors, the ac responsivity and hot electron effects have been explored. Responsivity as high as 1.6 nV/eV was achieved at 20 mK. A derivation is presented for the power index β=6 for electron-phonon heat exchange in variable range hopping conductivity. Applying our previously developed optimization theory for bias-assisted tunneling, hot electron effects and bias-assisted tunneling were shown to account equally well for the nonlinear dc current–voltage characteristic. However, a model was developed for the thermal time constants of these devices which does predict a clear distinction between bias-assisted tunneling and the hot electron effects. Comparison of data with this model showed that bias-assisted tunneling rather than hot electron effects was the dominant finite-bias effect in the Ge1−xAux thin films. © 1999 American Institute of Physics.

© 1999 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 63.20.K-

    Phonon interactions

  • 73.61.Cw

    Elemental semiconductors

  • 07.07.Df

    Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

  • 73.50.Fq

    High-field and nonlinear effects

  • 71.38.-k

    Polarons and electron-phonon interactions

  • 07.20.Mc

    Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment

  • 84.32.Ff

    Conductors, resistors (including thermistors, varistors, and photoresistors)

  • 73.40.Gk

    Tunneling

ARTICLE DATA

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

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    References

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    H. M. J. Boots, Phys. Rev. B 46, 9428 (1992).

    M. L. Roukes, M. R. Freeman, R. S. Germain, R. C. Richardson, and M. B. Ketchen, Phys. Rev. Lett. 55, 422 (1985).

    G. Bergmann, Wei-Wei, Yao-Zou, and R. M. Mueller, Phys. Rev. B 41, 7386 (1990).


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