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1 Oct 1998

Volume 84, Issue 7, pp. 3437-4024

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Engineering the strain field for the control of quantum confinement: An analytical model for arbitrary shape nanostructures

M. Mazzer, M. De Giorgi, R. Cingolani, G. Porello, F. Rossi, and E. Molinari

J. Appl. Phys. 84, 3437 (1998); http://dx.doi.org/10.1063/1.368517 (5 pages) | Cited 1 time

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We describe an analytical method to calculate the strain field and the corresponding band gap modulation induced in a quantum well by a surface stressor of arbitrary shape. In this way, it is possible to engineer the confinement potential of different strained nanostructures based on patterned heterojunctions. Band gap modulations up to 130–140 meV are predicted for suitably designed II–VI/III–V and III–V/III–V heterostructures. © 1998 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors

Electron attachment to photofragments and Rydberg states in laser-irradiated CCl2F2

Lal A. Pinnaduwage, Panos G. Datskos, and Cumali Tav

J. Appl. Phys. 84, 3442 (1998); http://dx.doi.org/10.1063/1.368518 (9 pages) | Cited 4 times

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We report electron attachment measurements on ArF-excimer-laser irradiated CCl2F2, obtained using an improved experimental technique that allows simultaneous measurements on multiple electron attaching species. Compared to a maximum electron attachment rate constant of ∼ 2×10−9 cm3 s−1 for the ground electronic state of CCl2F2, we measure an order of magnitude larger rate constant for the CClF2 radical produced via laser photodissociation. However, the highly excited electronic states of CCl2F2 produced by the laser irradiation have an associated electron attachment rate constant that is at least four orders of magnitude larger compared to the ground electronic state value. Implications of these findings for plasma processing discharges using CCl2F2 are discussed. © 1998 American Institute of Physics.
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31.50.Df Potential energy surfaces for excited electronic states
33.80.Rv Multiphoton ionization and excitation to highly excited states (e.g., Rydberg states)
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light
33.80.Gj Diffuse spectra; predissociation, photodissociation
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