Optical-field calculations for lossy multiple-layer AlxGa1−xN/InxGa1−xN laser diodes

Bergmann, M. J.; Casey, H. C.

doi:doi:10.1063/1.368185

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Linear and nonlinear optical properties of KNbO₃ ridge waveguides

Ridged channel waveguides in KNbO3 were produced using He+ ion implantation, photolithographic masking, and subsequent Ar+ ion sputtering. We investigated the linear and nonlinear optical characteristics of the waveguides. The effective mode indices are derived from the refractive index profiles using the effective index method. The losses are investigated as a function of wavelength and of the geometrical parameters channel width and ridge height. A minimum loss of 2 dB cm−1 is measured at a wa...

Effect of SiO_x buffer layer on propagation loss in LiNbO₃ channel waveguides

SiOx buffer layer is widely employed in metal-clad Z-cut LiNbO3 optical waveguides to prevent excessive propagation loss and disturbances induced by the direct loading of the metal on the guiding layer. The dependence of propagation loss in proton-exchange LiNbO3 channel waveguides induced by a SiOx buffer layer on the annealing time is studied using a nondestructive measurement method. These studies reveal that the propagation loss is degraded for annealing times of less than 3 h, while it can ...

Optical-field profiles in wide-band-gap Al_xGa_1−xN/In_xGa_1−xN multiple-quantum well (MQW) separate-confinement heterostructure (SCH) laser diodes (LDs) were calculated using a 2×2 transfer-matrix approach that accommodates complex refractive indices. The refractive indices of Al_xGa_1−xN and In_xGa_1−xN were approximated by shifting the refractive index of GaN according to the band-gap energy of the solid solution. Current LDs were analyzed and show reasonable optical confinement. Optimization of the SCH waveguide for a three MQW active region was performed by varying the waveguide and cladding layer thicknesses. For 0.8μm thick Al_0.10Ga_0.90N cladding layers, waveguides on sapphire and SiC substrates had a maximum confinement factor of ∼ 3.3%. Layers outside of the waveguide strongly affected the optical field for thin ( ∼ 0.4 μm) cladding layer thicknesses and resulted in resonant coupling of the light out of the waveguide. Sapphire substrates were found to enhance light confinement, while SiC substrates were found to reduce optical confinement as the cladding layer thickness is reduced. © 1998 American Institute of Physics.

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KEYWORDS and PACS

Keywords

III-V semiconductors, quantum well lasers, aluminium compounds, gallium compounds, indium compounds, refractive index, optical losses, wide band gap semiconductors, transfer function matrices, energy gap, claddings

PACS

42.55.Px

Semiconductor lasers; laser diodes
78.20.Ci

Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
02.10.Ud

Linear algebra
02.10.Xm

Multilinear algebra
02.60.Dc

Numerical linear algebra