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1 May 1998

Volume 83, Issue 9, pp. 4561-5005

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Variable range hopping conduction in multiwalled carbon nanotubes

Yositaka Yosida and Isamu Oguro

J. Appl. Phys. 83, 4985 (1998); http://dx.doi.org/10.1063/1.367302 (3 pages) | Cited 10 times

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An experimental study of electrical transport phenomena in magnetic-fields H up to 5 T in pressed samples of a porous system composed of multiwalled carbon nanotubes is reported. The exp[(T0/T)1/4] temperature dependence in the zero-field dc electrical resistance R(0) is found at low temperatures. Below 50 K, transverse magnetoresistance (MR), [R(H)−R(0)]/R(0), is negative. In the weak-field region (H<0.1 T), the negative MR is quadratic in H, and becomes linear in the field range 0.1–0.3 T. The linear and negative MR shows T−0.65±0.06 temperature dependence. The temperature dependence of R(0) is described in terms of Mott’s law for three-dimensional variable range hopping (3D VRH) conduction. The low-field magnetotransport features support a predicted quantum interference effect on 3D VRH conduction. © 1998 American Institute of Physics.
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72.20.My Galvanomagnetic and other magnetotransport effects
72.80.Rj Fullerenes and related materials
73.23.-b Electronic transport in mesoscopic systems

Temperature dependence of impact ionization coefficients in p-Si

K. Roze, N. A. Bannov, K. W. Kim, W. C. Holton, and M. A. Littlejohn

J. Appl. Phys. 83, 4988 (1998); http://dx.doi.org/10.1063/1.367303 (3 pages)

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An efficient full-band Monte Carlo program for high-energy carrier transport is employed to investigate hole impact ionization in p-Si for a range of electric fields up to 800 kV/cm and lattice temperatures between 77 and 450 K. An empirical expression is developed for the temperature dependence of ionization coefficients. The results are compared with those obtained from existing models. The empirical model agrees well with experiments and other numerically intensive models, providing a means to incorporate these effects into other device simulators and reliability models. © 1998 American Institute of Physics.
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72.80.Cw Elemental semiconductors
72.20.Ht High-field and nonlinear effects

Phase boundary between ripple and hut in the initial roughening stage in heteroepitaxy

K. Y. Suh and Hong H. Lee

J. Appl. Phys. 83, 4991 (1998); http://dx.doi.org/10.1063/1.367304 (3 pages) | Cited 2 times

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A regularly undulating surface topography has been observed during growth of heteroepitaxial layers such as Si1−xGex/Si2 and InxGa1−xAs/GaAs5. We present a modified evolution mechanism of this ripple structure, which consists of initial roughening and evolving stages. A theoretical relationship is derived through energy minimization, which indicates that the ratio of the amplitude to the square of the period of the ripple structure is constant in the evolving stage. Also derived is a criterion for determining the phase boundary between the ripple and hut phases in the Stranski–Krastanov growth. © 1998 American Institute of Physics.  
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68.55.-a Thin film structure and morphology

He–Xe laser magnetometry

Olivier Emile, Jérôme Poirson, Fabien Bretenaker, and Albert Le Floch

J. Appl. Phys. 83, 4994 (1998); http://dx.doi.org/10.1063/1.367305 (3 pages) | Cited 2 times

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The 3.51 μm 3He–136Xe laser shows promise for applications to mean field magnetometry. A careful analysis of the locking mechanisms is performed and experimentally verified. The high gain of the transition and the high mass of the 136Xe atom permits one to increase the magnetometer scale factor by a factor of 3 compared with 20Ne. Moreover, in the general case, the width of the locking region is divided by the same factor. © 1998 American Institute of Physics.
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42.62.Eh Metrological applications; optical frequency synthesizers for precision spectroscopy
42.55.Lt Gas lasers including excimer and metal-vapor lasers
07.55.Jg Magnetometers for susceptibility, magnetic moment, and magnetization measurements
85.70.Sq Magnetooptical devices

Magnetic force microscopy study of domain walls on a thin cobalt film

H.-N. Lin, Y. H. Chiou, B.-M. Chen, H.-P. D. Shieh, and Ching-Ray Chang

J. Appl. Phys. 83, 4997 (1998); http://dx.doi.org/10.1063/1.367306 (3 pages) | Cited 10 times

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Two types of 180° domain walls on a 115 nm cobalt film are observed by magnetic force microscopy. The surface Néel wall on top of an asymmetric Bloch wall is found inhomogeneous with the width estimated to be around 200 nm. The width of the rhomb-structured cross-tie wall, on the other hand, is approximately 400 nm. The coexistence of these two types of domain walls indicates that their wall energies are comparable at the film thickness. © 1998 American Institute of Physics.
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75.50.Cc Other ferromagnetic metals and alloys
75.70.Ak Magnetic properties of monolayers and thin films
75.70.Kw Domain structure (including magnetic bubbles and vortices)

Measurement of the critical current distribution for the resistively shunted junctions

Y. Tarutani, H. Hasegawa, T. Fukazawa, and K. Takagi

J. Appl. Phys. 83, 5000 (1998); http://dx.doi.org/10.1063/1.367307 (3 pages) | Cited 2 times

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A measurement method for the critical-current (Ic) distribution of the resistively shunted junction (RSJ) is discussed. According to numerical calculations, the Ic steps in the current–voltage (I–V) curve can be detected for the series array of the RSJ-type junctions when the I–V curve is changed from nonhysteretic to hysteretic. Bicrystal Josephson junctions in which YBa2Cu3O7−x film was used as electrodes were shunted by planar capacitors and the ratio of the Imin to Ic was decreased to less than 0.8. The Ic distribution of junctions numbering more than 400 could be measured by connecting them in series. A typical value of the standard deviation 1σ in Ic was 26%. © 1998 American Institute of Physics.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.Cp Josephson devices
74.25.Sv Critical currents

Electrical resistance changes of germanium during solidification under high pressure

D. W. He, F. X. Zhang, W. Yu, M. Zhang, Y. P. Liu, and W. K. Wang

J. Appl. Phys. 83, 5003 (1998); http://dx.doi.org/10.1063/1.367308 (3 pages) | Cited 4 times

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Changes in electrical resistance of germanium were investigated during melting and cooling under high pressure. It was found that the electrical resistances of the samples dropped abruptly at an early stage of the solidification above ∼4 GPa. This result shows a metallic liquid to metallic solid transition of germanium when cooling above ∼4 GPa as compared to a metallic liquid to nonmetallic solid transition at pressures below ∼4 GPa. The mechanism of the phase evolution in the solidification process of germanium at high pressures is briefly discussed. © 1998 American Institute of Physics.
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64.70.D- Solid-liquid transitions
81.30.Fb Solidification
62.50.-p High-pressure effects in solids and liquids
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