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J. Appl. Phys. 83, 3435 (1998); http://dx.doi.org/10.1063/1.367139 (3 pages)

Photoluminescence from Ge clusters embedded in porous silicon

Feng-Qi Liu1, Zhan-Guo Wang1, Guo-Hua Li2, and Guang-Hou Wang3

1Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
2National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
3Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China

(Received 29 September 1997; accepted 5 December 1997)

Visible photoluminescence (PL) and Raman spectra of Ge clusters embedded in porous silicon (PS) have been studied. The as-prepared sample shows redshifted and enhanced room temperature PL relative to reference PS. This result can be explained by the quantum confinement effect on excitons in Ge clusters and tunnel of excitons from Si units of the PS skeleton to Ge clusters. One year storage in dry air results in a pronounced decrease in PL intensity but blue-shifted in contrast to reference PS. This phenomenon correlates to the size decrease of macerated Ge clusters and occurrence of “quantum depletion” in Ge clusters. Consequently, only excitons in Si units contribute to PL. © 1998 American Institute of Physics.

© 1998 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 78.55.Ap

    Elemental semiconductors

  • 78.55.Mb

    Porous materials

  • 78.30.Am

    Elemental semiconductors and insulators

  • 78.35.+c

    Brillouin and Rayleigh scattering; other light scattering

  • 71.35.Cc

    Intrinsic properties of excitons; optical absorption spectra

ARTICLE DATA

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

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