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15 May 1998

Volume 83, Issue 10, pp. 5019-5595

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Simulations of charge transport across a grain boundary in n-silicon bicrystals

R. P. Joshi and R. F. Wood

J. Appl. Phys. 83, 5543 (1998); http://dx.doi.org/10.1063/1.367385 (3 pages) | Cited 2 times

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Electron transport in Si low-angle bicrystals is analyzed by a novel Monte Carlo–molecular dynamics simulation scheme. The effect of discrete charges at the grain boundaries are studied and compared to results from one-dimensional treatments. The average grain boundary charge density strongly influences transport, and a field-dependent threshold effect is predicted. Details of the internal charge arrangement are shown to be relatively important at low fields and/or high grain boundary charge densities. © 1998 American Institute of Physics.
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72.80.Cw Elemental semiconductors
72.20.Ht High-field and nonlinear effects
61.72.Mm Grain and twin boundaries

Pulse broadening in femtosecond x-ray diffraction

I. V. Tomov, P. Chen, and P. M. Rentzepis

J. Appl. Phys. 83, 5546 (1998); http://dx.doi.org/10.1063/1.367386 (3 pages) | Cited 5 times

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Advances in femtosecond laser technology make feasible the generation of femtosecond x-ray pulses. An analysis of Bragg diffraction of subpicosecond x-ray pulses is presented. It is shown that the three-dimensional nature of the diffracting crystal grating and the finite size of the x-ray beam will lead to a considerable broadening of the diffracted femtosecond x-ray pulse. © 1998 American Institute of Physics.
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61.05.cc Theories of x-ray diffraction and scattering
78.47.-p Spectroscopy of solid state dynamics
42.79.Dj Gratings

High performance Sm2+δ Fe15Ga2C2 permanent magnets made by melt spinning and hot pressing

J. van Lier, M. Kubis, W. Grünberger, L. Schultz, and H. Kronmüller

J. Appl. Phys. 83, 5549 (1998); http://dx.doi.org/10.1063/1.367387 (3 pages) | Cited 1 time

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Hot pressing was applied to produce high performance permanent magnets from melt-spun Sm2+δ Fe15Ga2C2 ribbons. The isotropic magnets show densities up to 7.8 g/cm3, coercivities μ0JHC up to 2.01 T (15.9 kA/cm) and energy products (BH)max up to 60.3 kJ/m3 (7.58 MGOe). No texture could be observed after hot deformation at 800 °C. © 1998 American Institute of Physics.
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75.50.Ww Permanent magnets
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
75.50.Vv High coercivity materials
75.50.Bb Fe and its alloys
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep

Effects of wafer thermostability and wafer-holding materials on optical loss in GaAs annealing

Y. S. Wu, R. S. Feigelson, R. K. Route, D. Zheng, L. A. Gordon, M. M. Fejer, and R. L. Byer

J. Appl. Phys. 83, 5552 (1998); http://dx.doi.org/10.1063/1.367388 (3 pages) | Cited 1 time

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A periodic structure of bonded GaAs wafers has been proposed for quasi-phase-matched second-harmonic generation. However, current bonding processes used to fabricate these structures often lead to unacceptably high optical losses. When commercial semi-insulating GaAs wafers were bonded at 850 °C, increases in the free-hole concentration (thermal conversion) were found to be a major cause of excess optical loss. This conversion depended on both the GaAs source and the materials comprising the sample holder. We found that quartz and sapphire could not be used in contact with GaAs wafers because they stuck during the bonding process. On the other hand, As-charged graphite holders did not stick and worked well under our bonding conditions. © 1998 American Institute of Physics.
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61.72.Cc Kinetics of defect formation and annealing
81.40.Gh Other heat and thermomechanical treatments
85.40.Qx Microcircuit quality, noise, performance, and failure analysis
81.05.Ea III-V semiconductors
72.80.Ey III-V and II-VI semiconductors

Mercury annealing of reactive ion etching induced p- to n-type conversion in extrinsically doped p-type HgCdTe

E. P. G. Smith, J. F. Siliquini, C. A. Musca, J. Antoszewski, J. M. Dell, L. Faraone, and J. Piotrowski

J. Appl. Phys. 83, 5555 (1998); http://dx.doi.org/10.1063/1.367389 (3 pages) | Cited 10 times

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Mercury annealing of reactive ion etching (RIE) induced p- to n-type conversion in extrinsically doped p-type epitaxial layers of HgCdTe (x = 0.31) has been used to reconvert n-type regions created during RIE processing. For the RIE processing conditions used (400 mT, CH4/H2, 90 W), p- to n-type conversion was observed using laser beam induced current (LBIC) measurements. After a sealed tube mercury anneal at 200 °C for 17 h, LBIC measurements clearly indicated that no n-type converted region remained. Subsequent Hall measurements confirmed that the material consisted of a uniform p-type layer, with electrical properties equivalent to that of the initial as-grown wafer (NA−ND = 2×1016 cm−3, μ = 350 cm2 V−1 s−1). © 1998 American Institute of Physics.
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52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.65.Cf Surface cleaning, etching, patterning
73.61.Ga II-VI semiconductors
61.72.Cc Kinetics of defect formation and annealing
72.80.Ey III-V and II-VI semiconductors
72.40.+w Photoconduction and photovoltaic effects
72.20.My Galvanomagnetic and other magnetotransport effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Further analysis of space-charge-limited currents in polybenzo[c]thiophene films

I. Musa, W. Eccleston, and S. J. Higgins

J. Appl. Phys. 83, 5558 (1998); http://dx.doi.org/10.1063/1.367497 (3 pages) | Cited 6 times

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The temperature dependence of space-charge-limited currents in polybenzo[c]thiophene (PBCT) films in a sandwich structure of aluminum/PBCT/indium–tin–oxide is presented. Free carrier space-charge-limited currents are identified and the free carrier mobility has been estimated to be ∼ 3×10−5 cm2 V−1 s−1. A trap of concentration ∼ 1.8×1017 cm−3 and energy ∼ 0.67 eV from the highest occupied molecular orbital level is estimated. The thickness dependence of the current, at constant voltage, is very close to that expected for a space-charge-limited mechanism. The Tauc band gap determined by optical spectrophotometry was found to be ∼ 1.34 eV. © 1998 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser

M. V. Maximov, Yu. M. Shernyakov, A. F. Tsatsul’nikov, A. V. Lunev, A. V. Sakharov, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, P. S. Kop’ev, L. V. Asryan, Zh. I. Alferov, N. N. Ledentsov, D. Bimberg, A. O. Kosogov, et al.

J. Appl. Phys. 83, 5561 (1998); http://dx.doi.org/10.1063/1.367390 (3 pages) | Cited 48 times

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A 1 W continuous-wave laser operation via the ground state of vertically coupled InGaAs quantum dots (VCQDs) in an AlGaAs matrix is demonstrated. VCQDs are directly revealed in transmission electron microscopy images of the laser structure. Ninety-six percent internal quantum efficiency is realized. The laser gain maximum shifts significantly with drive current towards higher photon energies in agreement with the relatively broad size distribution of VCQDs. © 1998 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
42.55.Px Semiconductor lasers; laser diodes
72.80.Ey III-V and II-VI semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

The effect of grain size on magnetic properties in Sm2Fe17Nx

J. E. Shield, D. J. Branagan, C. P. Li, and R. W. McCallum

J. Appl. Phys. 83, 5564 (1998); http://dx.doi.org/10.1063/1.367391 (3 pages) | Cited 3 times

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The microstructures of melt spun Sm11Fe89 and (Sm11Fe89)94Ti3C3 have been investigated under different solidification conditions. The magnetic properties of the nitrided materials have been related to the observed microstructures. Melt spinning of the Sm11Fe89 alloys resulted in grain sizes at or above the single domain limit. The addition of Ti and C resulted in an order of magnitude refinement in the microstructural scale. The magnetic properties of the samples with grain sizes below the single domain limit decreased with decreasing grain size due to increased intergranular exchange coupling. © 1998 American Institute of Physics.
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75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
61.72.Nn Stacking faults and other planar or extended defects
75.30.Et Exchange and superexchange interactions
81.05.Bx Metals, semimetals, and alloys

298 K operation of Nb/Nb oxide-based single-electron transistors with reduced size of tunnel junctions by thermal oxidation

Jun-ichi Shirakashi, Kazuhiko Matsumoto, Naruhisa Miura, and Makoto Konagai

J. Appl. Phys. 83, 5567 (1998); http://dx.doi.org/10.1063/1.367392 (3 pages) | Cited 7 times

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We present the successful operation of Nb/Nb oxide-based single-electron transistors at room temperature. At first, devices were fabricated by scanning probe microscope based anodic oxidation technique. Then, the effective area of tunnel junctions was further shrunken by thermal oxidation. Ultrasmall tunnel junctions were easily obtained utilizing additional thermal oxidation process, and single-electron charging effects were observed by means of the modulation of Coulomb blockade voltages at room temperature. © 1998 American Institute of Physics.
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74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)
81.65.Mq Oxidation
85.25.-j Superconducting devices

Kinetics and characterization of plasma grown aluminium oxide

S. Four, R. A. B. Devine, and L. Vallier

J. Appl. Phys. 83, 5570 (1998); http://dx.doi.org/10.1063/1.367393 (3 pages) | Cited 1 time

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The anodization of aluminium in a microwave excited O2 plasma has been studied at temperatures less than 100 °C. Thirty nanometers of oxide were grown in times substantially less than one hour. The growth kinetics follow those expected using the constant current growth mode. X-ray diffraction, Fourier transform infrared absorption, X-ray photoelectron spectroscopy, Auger electron spectroscopy, and electrical studies were carried out. The oxide is amorphous and stoichiometric, the as-grown films have high electrical conductivity. The method may be well suited for the formation of protective coatings. © 1998 American Institute of Physics.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
78.66.Nk Insulators
73.61.Ng Insulators
82.45.-h Electrochemistry and electrophoresis
78.35.+c Brillouin and Rayleigh scattering; other light scattering
61.43.Er Other amorphous solids
79.20.Fv Electron impact: Auger emission
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Hydrostatic pressure studies of GaAs tunnel diodes

L. Beji, B. el Jani, P. Gibart, J. C. Portal, and P. Basmaji

J. Appl. Phys. 83, 5573 (1998); http://dx.doi.org/10.1063/1.367394 (3 pages) | Cited 4 times

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GaAs (doped with Zn and Sn in the p and n parts, respectively) tunnel diode I–V characteristics were studied under hydrostatic pressure. The decrease in peak and valley current was explained using the band-gap pressure dependence and the fact that the Fermi energy is pinned by the DX level at normal pressure for heavy Sn doping. These findings are verified by calculating theoretical normalized peak and valley currents, which substantially agree with the experimental results. © 1998 American Institute of Physics.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
62.50.-p High-pressure effects in solids and liquids
71.55.Eq III-V semiconductors
73.61.Ey III-V semiconductors

A deep level transient spectroscopy characterization of defects induced in epitaxially grown n-Si by low-energy He-ion bombardment

F. D. Auret, P. N. K. Deenapanray, S. A. Goodman, W. E. Meyer, and G. Myburg

J. Appl. Phys. 83, 5576 (1998); http://dx.doi.org/10.1063/1.367395 (3 pages) | Cited 9 times

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Epitaxially grown n-Si was bombarded with low-energy (1 keV) He ions. Deep level transient spectroscopy revealed that this introduced four prominent defects with energy levels at 0.14, 0.20, 0.30, and 0.55 eV, respectively, below the conduction band. The electronic properties and annealing behavior of these defects are different to those of the main defects, namely, divacancies (V2) and vacancy-phosphorous centers, observed after 5.4 MeV He-ion bombardment of the same material. We propose that, except for the defect with an energy level at Ec−0.14 eV, the defects introduced by 1 keV He-ion bombardment of n-Si may be related to: (1) vacancy clusters larger than divacancies, or (2) incorporation of He and H into V2 or higher-order vacancy clusters. © 1998 American Institute of Physics.
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71.55.Cn Elemental semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
61.72.J- Point defects and defect clusters
61.72.Cc Kinetics of defect formation and annealing

Effects of the surface deposition of nitrogen on the thermal oxidation of silicon in O2

I. J. R. Baumvol, T. D. M. Salgado, F. C. Stedile, C. Radtke, and C. Krug

J. Appl. Phys. 83, 5579 (1998); http://dx.doi.org/10.1063/1.367396 (3 pages) | Cited 2 times

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Nitrogen was deposited on the surface layers of Si(100) by ion implantation at a very low energy (approximately 20 eV), at fluences between 1 and 10×1014 cm−2. The samples were thermally oxidized in dry O2 at 1050 °C, and the areal densities and profiles of N and O were determined by nuclear reaction analysis and narrow nuclear resonance profiling, evidencing that: (i) the retained amounts of N just after ion beam deposition stayed in the range between 0.3 and 7×1014 cm−2; (ii) the oxide growth is influenced strongly by the presence of nitrogen, the thickness of the oxide films (which remained between 4 and 30 nm) decreased with the increase of the areal density of nitrogen; (iii) N is partially removed from the system as oxidation proceeds. These observations are discussed in terms of current models for the thermal growth of silicon oxide in the presence of N. © 1998 American Institute of Physics.
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81.05.Cy Elemental semiconductors
81.65.Mq Oxidation
85.40.Ry Impurity doping, diffusion and ion implantation technology
61.72.uf Ge and Si
61.80.Jh Ion radiation effects

Coulomb blockade-based nanothermometry in strong magnetic fields

J. P. Pekola, J. J. Toppari, J. P. Kauppinen, K. M. Kinnunen, A. J. Manninen, and A. G. M. Jansen

J. Appl. Phys. 83, 5582 (1998); http://dx.doi.org/10.1063/1.367397 (3 pages) | Cited 5 times

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We have performed experiments to test for the susceptibility to strong magnetic fields of electron tunneling in normal metal -based nanostructures for Coulomb blockade primary thermometry. We have confirmed that, to within our accuracy of about ±1%, the single electron charging -induced zero bias differential resistance maximum is unaffected by the field up to 23 T at temperatures of 0.4–4.2 K. We discuss the simple theoretical basis of this immunity. We also report on the practical limitation at low temperatures imposed by superconductivity of aluminium in small magnetic fields. © 1998 American Institute of Physics.
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07.20.Dt Thermometers
07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment
73.23.Hk Coulomb blockade; single-electron tunneling
72.15.Gd Galvanomagnetic and other magnetotransport effects

High-coercivity Sm2(Fe,Al,Mo)17C1.5 ribbons with addition of Mo

W. Tang, Z. Q. Jin, J. H. Yin, J. R. Zhang, S. Y. Zhang, and Y. W. Du

J. Appl. Phys. 83, 5585 (1998); http://dx.doi.org/10.1063/1.367398 (3 pages) | Cited 1 time

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The effects of Mo additions on the structure and magnetic properties of Sm2Fe(15.5−x)MoxAl1.5C1.5 alloys have been investigated by means of x-ray diffraction (XRD), scanning electron microscopy, transmission electron microscopy, and magnetic measurements. The XRD analyses show that as-cast alloys consist mainly of a 2/17-type carbide and a considerable amount of α-Fe. Rapidly quenched, the Mo-containing alloys form a nanocrystalline structure with an average grain size of 35–50 nm, while the amount of the α-Fe phase is greatly decreased. The magnetic hardening of the Mo-containing alloys can be achieved by direct quenching. A coercivity exceeding 1.35 T is obtained for the Sm2Fe14.9Mo0.6Al1.5C1.5 ribbon spun at 40 m/s. These results reveal that the addition of Mo is effective in improving the coercivity. © 1998 American Institute of Physics.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
75.50.Ww Permanent magnets
61.66.Dk Alloys
75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)
75.50.Kj Amorphous and quasicrystalline magnetic materials
75.50.Vv High coercivity materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging

Evaluation of adhesion of diamond coating by thermal quench method

Qi Hua Fan, A. Fernandes, E. Pereira, and J. Grácio

J. Appl. Phys. 83, 5588 (1998); http://dx.doi.org/10.1063/1.367399 (3 pages) | Cited 3 times

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Adhesion of a diamond coating on metal was quantitatively evaluated by a thermal quench method combined with micro-Raman spectroscopy. It was found that the diamond Raman peak located at wave numbers higher than 1332 cm−1 before the thermal quench, due to the presence of a compressive stress in the diamond film. After a quench from 413 to 273 K (ice water), the Raman peak shifted to ∼ 1332 cm−1, implying that the diamond film detached from the substrate and became free from biaxial stresses. The coating adhesion is considered to be comparable to the thermal stress induced by the quench. According to a mismatch of the thermal expansion between the film and the substrate, the thermal stress was calculated and the adhesion of a diamond film coated on copper with a titanium interlayer was estimated, being about 2.54 GPa. © 1998 American Institute of Physics.
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68.35.Gy Mechanical properties; surface strains
81.05.ub Fullerenes and related materials
65.40.De Thermal expansion; thermomechanical effects
81.40.Gh Other heat and thermomechanical treatments
78.30.Hv Other nonmetallic inorganics
78.66.Db Elemental semiconductors and insulators
FREE

Comment on “A model of hole trapping in SiO2 films on silicon” [J. Appl. Phys. 81, 6822 (1997)]

R. A. B. Devine, W. L. Warren, and S. Karna

J. Appl. Phys. 83, 5591 (1998); http://dx.doi.org/10.1063/1.367498 (2 pages) | Cited 5 times

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Recent measurements of oxygen-vacancy creation in Si/SiO2/Si structures during high temperature annealing which suggest an activation energy of 1.5 eV for the process have been interpreted in terms of a simple thermodynamic model. We demonstrate that this model is inconsistent with thermochemical calculations which indicate that the energy for this process is 4.5 eV [K. P. Huber and G. Hertz, Molecular Structure and Molecular Structure IV, Constants of Diatomic Molecules (Van Nostrand Reinhold, New York, 1979), p. 490]. Another process involving thermally induced oxygen out-diffusion at the SiO2/Si interface has an effective activation energy for oxygen-vacancy creation ∼2.0 eV, this is more consistent with the experimental data. © 1998 American Institute of Physics.
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71.55.Ht Other nonmetals
61.72.J- Point defects and defect clusters
61.72.Cc Kinetics of defect formation and annealing
FREE

Response to “Comment on ‘A model of hole trapping in SiO2 films on silicon’ ” [J. Appl. Phys. 83, 5591 (1998)]

P. M. Lenahan and J. F. Conley

J. Appl. Phys. 83, 5593 (1998); http://dx.doi.org/10.1063/1.367499 (2 pages) | Cited 3 times

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We disagree with the comment of R. A. B. Devine, W. L. Warren, and S. Karna [J. Appl. Phys. 83, 5591 (1998)]. © 1998 American Institute of Physics.  
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73.61.Ng Insulators
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
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