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Journal of Applied Physics / Volume 82 / Issue 4
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J. Appl. Phys. 82, 1804 (1997); http://dx.doi.org/10.1063/1.365983 (8 pages)

Ultrahigh strain and piezoelectric behavior in relaxor based ferroelectric single crystals

Seung-Eek Park and Thomas R. Shrout

Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802

(Received 20 March 1997; accepted 12 May 1997)

The piezoelectric properties of relaxor based ferroelectric single crystals, such as Pb(Zn1/3Nb2/3)O3–PbTiO3 and Pb(Mg1/3Nb2/3)O3–PbTiO3 were investigated for electromechanical actuators. In contrast to polycrystalline materials such as Pb(Zr,Ti)O3, morphotropic phase boundary compositions were not essential for high piezoelectric strain. Piezoelectric coefficients (d33’s)>2500 pC/N and subsequent strain levels up to >0.6% with minimal hysteresis were observed. Crystallographically, high strains are achieved for 〈001〉 oriented rhombohedral crystals, although 〈111〉 is the polar direction. Ultrahigh strain levels up to 1.7%, an order of magnitude larger than those available from conventional piezoelectric and electrostrictive ceramics, could be achieved being related to an E-field induced phase transformation. High electromechanical coupling (k33)>90% and low dielectric loss <1%, along with large strain make these crystals promising candidates for high performance solid state actuators. © 1997 American Institute of Physics.

© 1997 American Institute of Physics

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KEYWORDS and PACS

Keywords

lead compounds, piezoelectric materials, internal stresses, ferroelectric transitions, dielectric hysteresis, dielectric losses, piezoelectric actuators, ferroelectric devices, PZT, NIOBIUM OXIDES, PIEZOELECTRICITY, ACTUATORS, FERROELECTRIC MATERIALS, STRAINS, MONOCRYSTALS, PHASE TRANSFORMATIONS, HYSTERESIS, DOMAIN STRUCTURE

PACS

  • 77.84.Ek

    Niobates and tantalates

  • 77.84.Cg

    PZT ceramics and other titanates

  • 77.65.Bn

    Piezoelectric and electrostrictive constants

  • 77.80.Dj

    Domain structure; hysteresis

  • 77.80.B-

    Phase transitions and Curie point

  • 77.22.Gm

    Dielectric loss and relaxation

  • 85.50.-n

    Dielectric, ferroelectric, and piezoelectric devices

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.365983

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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