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1 Jan 1997

Volume 81, Issue 1, pp. 1-541

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Slab plasmon polaritons and waveguide modes in four-layer resonant semiconductor waveguides

J. Stiens, R. Vounckx, I. Veretennicoff, A. Voronko, and G. Shkerdin

J. Appl. Phys. 81, 1 (1997); http://dx.doi.org/10.1063/1.363842 (10 pages) | Cited 42 times

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This paper presents a detailed study of the waveguide and plasmon polariton properties of four-layer systems involving highly doped semiconductor material. The dispersion relations of waveguide and plasmon polariton modes are calculated for different geometrical parameters and material properties. Special attention is paid to the transition region between the latter modes, which exhibits a complex behavior. Slab plasmon polaritons at wavelengths slightly larger than the plasma wavelength, yielding a positive real part of the permittivity, have been found. Finally, applications at wavelengths near the transition region and near the plasma wavelength are proposed and discussed. © 1997 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
77.22.Ch Permittivity (dielectric function)

Efficient second-harmonic generation in novel Cerenkov type nonlinear-optical polymer waveguides

K. Schmitt, C. Benecke, and M. Schadt

J. Appl. Phys. 81, 11 (1997); http://dx.doi.org/10.1063/1.363997 (7 pages) | Cited 8 times

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New cinnamic acid type nonlinear-optical (NLO) photopolymers and their use in frequency doubling Cerenkov waveguides are reported. Cerenkov configurations are shown to be particularly appropriate for efficient second-harmonic generation in NLO polymers. Analysis of Cerenkov waveguides in three-layer configurations allows optimization of their performance with respect to polymer layer thickness and substrate parameters. The NLO efficiencies predicted from the model and from independently determined NLO material parameters are qualitatively in agreement with the experimentally observed large Cerenkov NLO efficiency of 0.2% W−1 cm−1. We show further that improved device performance results from novel four-layer waveguide configurations. © 1997 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Jk Polymers and organics
42.70.Gi Light-sensitive materials
42.65.Wi Nonlinear waveguides
42.79.Gn Optical waveguides and couplers
42.79.Nv Optical frequency converters
41.60.Bq Cherenkov radiation

Comparison of isotropic and anisotropic sensor effects in polymer lightguides

M. Biebricher, T. Kleckers, and H. Franke

J. Appl. Phys. 81, 18 (1997); http://dx.doi.org/10.1063/1.363840 (5 pages)

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A method for measuring the effective birefringence of polymer lightguides is shown to be a useful tool for chemical sensors. It is demonstrated that the method can be either the nonlinear response of an initially anisotropic lightguide on a linear effect of an in-diffusing compound or a stress induced birefringence in an initially isotropic polymer film. The samples used were polyimide for the anisotropic case and the allyl polymer poly(diallylic terephtalic acid) for the isotropic material. © 1997 American Institute of Physics.
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42.81.Pa Sensors, gyros
82.80.-d Chemical analysis and related physical methods of analysis
42.70.Jk Polymers and organics
42.65.Wi Nonlinear waveguides
78.20.Fm Birefringence

Artificial uniaxial and biaxial dielectrics with the use of photoinduced gratings

Changxi Yang and Pochi Yeh

J. Appl. Phys. 81, 23 (1997); http://dx.doi.org/10.1063/1.363989 (7 pages) | Cited 2 times

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We investigate the form birefringence due to photoinduced one- and two-dimensional volume index gratings in DuPont photopolymers. The effective medium theory has been applied to the continuous volume subwavelength gratings. With the presence of a one-dimensional volume subwavelength grating, the originally isotropic photopolymer exhibits a negative form birefringence and behaves like a uniaxial dielectric. A form birefringence of −1.2×10−3 at λ=632.8 nm is measured at a grating period of Λ=447 nm. Experimental results on the dispersion of the form birefringence versus the illumination wavelength and the grating period are presented. With the presence of a two-dimensional grating, in general, the originally isotropic photopolymer exhibits a biaxial form birefringence and behaves like a biaxial dielectric. Positive form birefringence can also be obtained by recording two volume gratings with different grating wave vectors. By recording two photoinduced volume gratings we can synthesize biaxial dielectrics with the principal axes along any desired directions. We also report the measured principal refractive indices of the medium due to the presence of two-dimensional volume gratings in DuPont photopolymer. © 1997 American Institute of Physics.
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42.79.Dj Gratings
42.70.Jk Polymers and organics
42.70.Ln Holographic recording materials; optical storage media
42.40.Ht Hologram recording and readout methods
42.40.Eq Holographic optical elements; holographic gratings
78.20.Fm Birefringence

Numerical study of an optically pumped multimode D2O laser

K. Sasaki and T. Tsukishima

J. Appl. Phys. 81, 30 (1997); http://dx.doi.org/10.1063/1.364111 (8 pages) | Cited 1 time

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A numerical simulation of an optically pumped, multimode D2O laser was carried out based on Lamb’s semiclassical laser theory. The numerical code includes the dispersion effect of the laser medium (D2O gas in the cavity) in order to simulate the strength of mode coupling accurately. As a result, multiple-longitudinal-mode oscillations around the Raman resonance frequency were obtained that are roughly in agreement with experimental observations. Energy spectra of the D2O laser emission obtained by the simulation were compared with those of the experimental results for various D2O gas pressures. By including the dispersion effect, temporal variations of mode frequencies were calculated. In addition, resonant pumping was examined to obtain spectrally narrow outputs by tuning a frequency of a pump CO2 laser pulse to the line center of the absorption band of D2O molecules. © 1997 American Institute of Physics.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
42.50.-p Quantum optics
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Kinetics of low pressure rf discharges with dust particles

De-Zhen Wang and J. Q. Dong

J. Appl. Phys. 81, 38 (1997); http://dx.doi.org/10.1063/1.364124 (5 pages) | Cited 10 times

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The kinetics of dusty plasma in low pressure rf discharges is studied by solving self-consistently the time dependent electron Boltzmann and dust charging equations. The electron temperature, the excitation and ionization rate coefficients, and the dust particle charge are shown to be modulated in the periodic state. It is demonstrated that the presence of dust particles enhances the modulated amplitude, reduces the high energy content of the electron energy distribution, the corresponding effective electron temperature, and the electron excitation and ionization rate coefficients. © 1997 American Institute of Physics.
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52.80.Pi High-frequency and RF discharges
52.25.Vy Impurities in plasmas
52.25.Fi Transport properties
52.25.Jm Ionization of plasmas
52.25.Dg Plasma kinetic equations

Ion contribution to the deposition of silicon dioxide in oxygen/silane helicon diffusion plasmas

C. Charles and R. W. Boswell

J. Appl. Phys. 81, 43 (1997); http://dx.doi.org/10.1063/1.364103 (7 pages) | Cited 8 times

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A very high silane dissociation rate (⩾95%) has been measured using mass spectrometric analysis of neutral species in a low pressure (a few mTorr) high density (⩾1011 cm−3 for a radio frequency source power of 800 W) oxygen/silane (O2/SiH4) helicon deposition reactor. Energy selective mass spectrometric measurements of positive ions have been performed for O2/SiH4 flow rate ratios varying from 1 to 10 and for a constant power of 800 W. A simple model of the ion-induced deposition rate has been developed and the results have been compared to the measured deposition rate. It appears that 20%–50% of the silicon atoms in the near-stoichiometric deposited oxides could result from the flux of silicon-containing ions (essentially Si+ and SiOH+) to the substrate during deposition. An oxidation process via O2+ ions and an etching process via H3+ ions could possibly be involved in the ion-induced deposition mechanism. © 1997 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.Nq Composition and phase identification
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Extinguishing by “slow quenching’’ in a thick grid Cs–Ba tacitron

Bernard Wernsman and Mohamed S. El-Genk

J. Appl. Phys. 81, 50 (1997); http://dx.doi.org/10.1063/1.364128 (8 pages)

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Transient Langmuir probe measurements of the plasma density, electron temperature, and plasma potential during “slow quenching’’ of a Cs–Ba tacitron at two different discharge conditions were made. Following the application of a negative voltage pulse on the grid, the grid aperture sheaths initially grew then shrank temporarily, due to an increase in the ion flux from the grid-collector region, then grew again until the discharge eventually extinguished. Discharge extinguishing occurred when the effective ionization cross section became decoupled from the continually rising electron temperature; hence, the discharge could not be maintained owing to the decrease in the ionization rate. This inability to maintain the discharge is considered the mechanism for extinguishing by slow quenching. © 1997 American Institute of Physics.
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52.25.Jm Ionization of plasmas
52.75.Kq Plasma switches (e.g., spark gaps)
52.70.Ds Electric and magnetic measurements
52.40.Hf Plasma-material interactions; boundary layer effects
52.80.-s Electric discharges

Simulation of radiation effects on three-dimensional computer optical memories

M. Moscovitch and D. Emfietzoglou

J. Appl. Phys. 81, 58 (1997); http://dx.doi.org/10.1063/1.364096 (12 pages) | Cited 6 times

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A model was developed to simulate the effects of heavy charged-particle (HCP) radiation on the information stored in three-dimensional computer optical memories. The model is based on (i) the HCP track radial dose distribution, (ii) the spatial and temporal distribution of temperature in the track, (iii) the matrix-specific radiation-induced changes that will affect the response, and (iv) the kinetics of transition of photochromic molecules from the colored to the colorless isomeric form (bit flip). It is shown that information stored in a volume of several nanometers radius around the particle’s track axis may be lost. The magnitude of the effect is dependent on the particle’s track structure. © 1997 American Institute of Physics.
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42.79.Vb Optical storage systems, optical disks

Simple method for the calculation of the deformation profiles in chiral nematic liquid crystal cells with asymmetric pretilt

C.-J. Chen, A. Lien, and M. I. Nathan

J. Appl. Phys. 81, 70 (1997); http://dx.doi.org/10.1063/1.364097 (4 pages) | Cited 7 times

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We present a one-dimensional simulation methodology for determining the liquid crystal director distribution in a cell for arbitrary pretilt angles on two glass substrate surfaces. The method is illustrated for cases of an asymmetric twisted nematic cell, a hybrid alignment nematic cell, and a bend alignment nematic cell. © 1997 American Institute of Physics.
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42.79.Kr Display devices, liquid-crystal devices
61.30.-v Liquid crystals

Amorphous {100} platelet formation in (100) Si induced by hydrogen plasma treatment

Ki-Hyun Hwang, Jin-Won Park, Euijoon Yoon, Ki-Woong Whang, and Jeong Yong Lee

J. Appl. Phys. 81, 74 (1997); http://dx.doi.org/10.1063/1.364098 (4 pages) | Cited 11 times

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The defect formation in (100) Si at low temperatures during electron cyclotron resonance hydrogen plasma treatment has been studied. The temperature effect on crystalline defect morphology is studied by transmission electron microscopy and high resolution transmission electron microscopy. A high density of hydrogen-stabilized {111} platelets is observed at 240 °C, whereas a large number of amorphous {100} platelets is observed at 385 °C. The formation of amorphous {100} platelets without {111} platelets at 385 °C is reported. The amorphous {100} platelet at 385 °C results from the precipitation of oxygen promoted by hydrogen-enhanced oxygen diffusion. The low-temperature photoluminescence study and the spreading resistance profiles for the hydrogenated Si support the proposed mechanism of the amorphous {100} platelet. © 1997 American Institute of Physics.
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81.65.-b Surface treatments
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
78.55.Ap Elemental semiconductors
61.43.Dq Amorphous semiconductors, metals, and alloys
68.35.Fx Diffusion; interface formation
73.25.+i Surface conductivity and carrier phenomena
64.75.-g Phase equilibria
81.30.Mh Solid-phase precipitation

Size-distribution and annealing behavior of end-of-range dislocation loops in silicon-implanted silicon

G. Z. Pan, K. N. Tu, and A. Prussin

J. Appl. Phys. 81, 78 (1997); http://dx.doi.org/10.1063/1.364099 (7 pages) | Cited 30 times

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A study of end-of-range (EOR) dislocation loops in silicon implanted with 50 keV 1016 Si/cm2 was carried out by using transmission electron microscopy. Two kinds of post-implantation anneals were performed, furnace anneals at 850 °C and rapid thermal anneals at 1000 °C. We observed the ripening for two types of EOR dislocation loops. They were faulted Frank dislocation loops and perfect prismatic dislocation loops. By separating their size distribution profiles, we found that their distribution profiles are different from that of conventional Ostwald ripening for precipitates. A long tail distribution profile was formed for perfect prismatic dislocation loops. We analyzed the distribution profiles and found that the size distribution profile of faulted Frank dislocation loops could be well fitted by a normal Gaussian probability function and that of perfect prismatic dislocation loops by a log-normal Gaussian probability function. Measurement of the total number of interstitials within both types of loops shows that the ripening of EOR dislocation loops is conservative. Knowing the size-distribution profiles of the EOR dislocation loops, it was possible to perform an analysis of the ripening behavior of the two types of dislocation loops. © 1997 American Institute of Physics.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Cc Kinetics of defect formation and annealing
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
64.75.-g Phase equilibria
61.72.J- Point defects and defect clusters

Transient stimulated Brillouin scattering and damage of optical glass

Haiwu Yu and Shaoxian Meng

J. Appl. Phys. 81, 85 (1997); http://dx.doi.org/10.1063/1.364100 (4 pages) | Cited 5 times

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A theory of the excitation of ultrasound waves arising from photoelastic coupling with light is presented in this article. Using several reasonable approximations, a numerical calculation of the transient stimulated Brillouin scattering process shows that a large amplitude of acoustic wave can be built up during the pulse of pump light, and it may result in damage to optical materials. This model gives a damage threshold value of ∼30–50 J/cm2 when using Gaussian or square nanosecond pulses on optical materials. © 1997 American Institute of Physics.
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78.35.+c Brillouin and Rayleigh scattering; other light scattering
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.70.Hj Laser materials
42.70.Ce Glasses, quartz
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
62.65.+k Acoustical properties of solids

Kinetics of transformation with nucleation and growth mechanism: Special consideration of crystallographic relationship and epitaxial growth

Ge Yu, S. T. Lee, J. K. L. Lai, and L. Ngai

J. Appl. Phys. 81, 89 (1997); http://dx.doi.org/10.1063/1.364101 (7 pages) | Cited 5 times

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Based on the calculation of the survival probability, equations describing the kinetics of phase transformation with nucleation and growth mechanism are derived for general cases by including the temporal and spatial dependence both for the nucleation rate and for the growth rate. Particularly in this study, the crystallographic relationship in the growth is taken care of. For the simple case, in which the growth rate in the crystallographically identical directions are the same and the shape of grains remains congruent during the crystal growth, the influence of the shape factor on the kinetics can be determined for grains of different contours. The application to epitaxial growth yields the coverage quotient of a certain plane in the deposited crystals as a function of the reaction time and the position. Also the thickness distribution during the deposition can be determined. The exploration of the relationships between the growth kinetics and the crystallography is helpful to obtain reliable information about the mechanisms of nucleation and growth from the evaluation of the measurements. © 1997 American Institute of Physics.
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68.55.-a Thin film structure and morphology
64.60.Q- Nucleation
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Empirical bond-order potential description of thermodynamic properties of crystalline silicon

Lisa J. Porter, Sidney Yip, Masatake Yamaguchi, Hideo Kaburaki, and Meijie Tang

J. Appl. Phys. 81, 96 (1997); http://dx.doi.org/10.1063/1.364102 (11 pages) | Cited 34 times

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Thermodynamic properties of silicon (diamond cubic phase) are calculated using an empirical many-body potential developed by Tersoff [Phys. Rev. Lett. 56, 632 (1986)] based on the concept of bond order. It is shown that this model gives predictions in good agreement with experiment for those properties governed by energetics (free energy, entropy, and heat capacity). The thermal expansion coefficient is less well described, which is traced to the fact that the model potential, in its present version, is overly stiff and therefore unable to account properly for the volume dependence of the transverse acoustic modes. Furthermore, sensitivity of the potential to whether each atom remains bonded to only four neighbors indicates that the short-range nature of the potential may necessitate model improvement before it is suitable for studies of thermomechanical properties at elevated temperatures or large deformations. © 1997 American Institute of Physics.
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65.20.-w Thermal properties of liquids
65.40.gd Entropy
65.40.-b Thermal properties of crystalline solids
65.60.+a Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.
65.80.-g Thermal properties of small particles, nanocrystals, nanotubes, and other related systems
65.40.De Thermal expansion; thermomechanical effects

A comparison of boron and phosphorus diffusion and dislocation loop growth from silicon implants into silicon

Jingwei Xu, V. Krishnamoorthy, Kevin S. Jones, and Mark E. Law

J. Appl. Phys. 81, 107 (1997); http://dx.doi.org/10.1063/1.363994 (5 pages) | Cited 7 times

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Transient enhanced diffusion (TED) results from implantation damage creating enhanced diffusion of dopants in silicon. This phenomenon has mostly been studied using boron marker layers. We have performed an experiment using boron, phosphorus, and dislocation markers to compare TED effects. This experiment shows that phosphorus is enhanced significantly more than boron during damage annealing. Dislocation growth indicates that a number of interstitials greater than the damage dose is captured during these anneals. The time to saturate the dislocation growth agrees well with phosphorus diffusion saturation, and is greater than the boron saturation. © 1997 American Institute of Physics.
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61.72.uf Ge and Si
85.40.Ry Impurity doping, diffusion and ion implantation technology
66.30.J- Diffusion of impurities
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.80.Jh Ion radiation effects
81.05.Cy Elemental semiconductors

Distribution of As atoms in InP/InPAs (1 monolayer)/InP heterostructures measured by x-ray crystal truncation rod scattering

M. Tabuchi, K. Fujibayashi, N. Yamada, Y. Takeda, and H. Kamei

J. Appl. Phys. 81, 112 (1997); http://dx.doi.org/10.1063/1.363995 (4 pages) | Cited 3 times

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The interfaces of InP/InPAs(1 monolayer)/InP samples grown by organometallic vapor-phase epitaxy were investigated by the x-ray crystal truncation rod scattering measurement. The distribution of As atoms around the InPAs heterolayer was clearly revealed in the atomic scale from the measurement. It was shown that the distribution of As atoms into the layer under the InPAs layer was very small and that distribution of As atoms in the InP cap layer was, on the other hand, noticeable and the amount of As atoms was almost the same as that contained in the InPAs heterolayer. These results suggest that the extension of As atoms in the InP layer occurs due to the absorbed As atoms on the InPAs surface or As atoms remaining in the gas phase. Thus, to realize the abrupt InP/InPAs interface, the source-gas change sequence should be controlled to be very abrupt. © 1997 American Institute of Physics.
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68.35.Dv Composition, segregation; defects and impurities
68.35.Ct Interface structure and roughness
81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase

High electronic excitations and ion beam mixing effects in high energy ion irradiated Fe/Si multilayers

Ph. Bauer, C. Dufour, C. Jaouen, G. Marchal, J. Pacaud, J. Grilhé, and J. C. Jousset

J. Appl. Phys. 81, 116 (1997); http://dx.doi.org/10.1063/1.363996 (10 pages) | Cited 17 times

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Mössbauer spectroscopy (57Fe) shows evidence for mixing effects induced by electronic energy deposition in nanoscale Fe/Si multilayers irradiated with swift heavy ions. A decrease in the mixing efficiency with electronic stopping power is reported; a threshold is found, under which iron environment modifications no longer occur. The kinetics of Fe–Si phase formation after irradiation suggests the existence of three regimes: (i) for high excitation levels, a magnetic amorphous phase is formed directly in the wake of the incoming ion and an almost complete mixing is reached at low fluence (1013 U/cm2); (ii) for low excitation levels, a paramagnetic Si-rich amorphous phase is favored at the interface while crystalline iron subsists at high fluences; (iii) for intermediate excitation levels, saturation effects are observed and the formation rate of both magnetic and paramagnetic phases points to direct mixing in the ion wake but with a reduced track length in comparison to U irradiation. The measured interfacial mixing cross section induced by electronic energy deposition suggests that a thermal diffusion process is mainly involved in addition to damage creation. © 1997 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
61.80.Jh Ion radiation effects
64.75.-g Phase equilibria
76.80.+y Mössbauer effect; other γ-ray spectroscopy
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
75.50.Kj Amorphous and quasicrystalline magnetic materials
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.20.Ck Nonmetals

Reconstruction of the SiO2 structure damaged by low-energy Ar-implanted ions

B. Garrido, J. Samitier, S. Bota, J. A. Moreno, J. Montserrat, and J. R. Morante

J. Appl. Phys. 81, 126 (1997); http://dx.doi.org/10.1063/1.363998 (9 pages) | Cited 11 times

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The damage created in SiO2 layers by low-energy Ar ions (130 keV) and the reconstruction of the structure after various annealing steps have been characterized as a function of the implantation dose. Quantitative determinations of the damage produced have been performed from infrared spectroscopy. We show that two dose thresholds for damage are encountered: At 1014 cm−2 damage saturates and for doses above 1017 cm−2 sputtering effects dominate. Annealing at high temperatures (1100 °C) restores the structure of the initial nonimplanted oxide only for doses below the second threshold, although some disorder remains. Electroluminescence measurements show that annealing is able to eliminate electrically active defects. For implantation doses greater than 1017 cm−2, annealing is unable to restore the structure completely as sputtering effects create a depleted oxygen layer at the surface and substoichiometric defects appear. The presence of microcavities created by the Ar atoms at such high doses may affect the annealing behavior. © 1997 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.up Other materials
78.66.Nk Insulators
78.60.Fi Electroluminescence
78.30.Hv Other nonmetallic inorganics

Adhesion enhancement of ion beam mixed Cu/Al/polyimide

G. S. Chang, S. M. Jung, Y. S. Lee, I. S. Choi, C. N. Whang, J. J. Woo, and Y. P. Lee

J. Appl. Phys. 81, 135 (1997); http://dx.doi.org/10.1063/1.363999 (4 pages) | Cited 15 times

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Cu (400 Å)/polyimide was mixed with 80 keV Ar+ and N2+ from 1.0×1015 to 2.0×1016 ions/cm2. The same processes were repeated for the Cu (400 Å)/Al (50 Å)/polyimide system which has Al as a buffer layer. The quantitative adhesion strength was measured by a standard scratch test. X-ray photoelectron spectroscopy was employed to investigate the change in the chemical bonds of the ion beam mixed polyimide substrate and the intermediate effects for the adhesion enhancement in Cu/Al/polyimide. Two distinct tendencies are observed in the adhesion strength: Cu/Al/polyimide is more adhesive than Cu/polyimide after ion beam mixing, and N2+ ions are more effective in the adhesion enhancement than Ar+. The formation of an interlayer compound of CuAl2O4 accounts for the former, while the latter is understood by the fact that N2+ ions produce more pyridinelike moiety, amide group and tertiary amine moiety which are known as adhesion promoters. © 1997 American Institute of Physics.
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68.35.Gy Mechanical properties; surface strains
61.80.Jh Ion radiation effects
61.82.Pv Polymers, organic compounds
61.82.Bg Metals and alloys
64.75.-g Phase equilibria
85.40.Ls Metallization, contacts, interconnects; device isolation
66.30.Ny Chemical interdiffusion; diffusion barriers

Influence of ion energy and substrate temperature on the optical and electronic properties of tetrahedral amorphous carbon (ta-C) films

M. Chhowalla, J. Robertson, C. W. Chen, S. R. P. Silva, C. A. Davis, G. A. J. Amaratunga, and W. I. Milne

J. Appl. Phys. 81, 139 (1997); http://dx.doi.org/10.1063/1.364000 (7 pages) | Cited 173 times

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The properties of amorphous carbon (a-C) deposited using a filtered cathodic vacuum arc as a function of the ion energy and substrate temperature are reported. The sp3 fraction was found to strongly depend on the ion energy, giving a highly sp3 bonded a-C denoted as tetrahedral amorphous carbon (ta-C) at ion energies around 100 eV. The optical band gap was found to follow similar trends to other diamondlike carbon films, varying almost linearly with sp2 fraction. The dependence of the electronic properties are discussed in terms of models of the electronic structure of a-C. The structure of ta-C was also strongly dependent on the deposition temperature, changing sharply to sp2 above a transition temperature, T1, of ≈200 °C. Furthermore, T1 was found to decrease with increasing ion energy. Most film properties, such as compressive stress and plasmon energy, were correlated to the sp3 fraction. However, the optical and electrical properties were found to undergo a more gradual transition with the deposition temperature which we attribute to the medium range order of sp2 sites. We attribute the variation in film properties with the deposition temperature to diffusion of interstitials to the surface above T1 due to thermal activation, leading to the relaxation of density in context of a growth model. © 1997 American Institute of Physics.
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68.55.-a Thin film structure and morphology
78.66.Nk Insulators
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
77.55.-g Dielectric thin films
61.43.Er Other amorphous solids
68.60.-p Physical properties of thin films, nonelectronic
61.72.J- Point defects and defect clusters
68.35.Fx Diffusion; interface formation

Phase formation and stability of N+ implanted SiC thin films

R. Capelletti, A. Miotello, and P. M. Ossi

J. Appl. Phys. 81, 146 (1997); http://dx.doi.org/10.1063/1.364001 (4 pages) | Cited 4 times

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Silicon carbide amorphous thin films have been bombarded with 100 keV N ions. Infrared-absorption spectroscopy has been used to study the effect of increasing ion doses, up to 5×1017 N+ cm−2, on the evolution of chemical bonding between Si, C, and N. The changes induced by thermal annealing at different temperatures, up to 973 K, on the stability of the bombardment induced SiCxNy phase are investigated, together with the effect of surface oxidation during the postannealing cooling of the films. The new phase is thermally stable within the temperature range investigated. At the highest implantation dose a threshold is reached above which N atoms are located as interstitial, or are weakly bonded in the host film. Annealing at high enough temperature induces migration toward the surface and subsequent loss of interstitial N. © 1997 American Institute of Physics.
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81.05.Gc Amorphous semiconductors
85.40.Ry Impurity doping, diffusion and ion implantation technology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.up Other materials
78.66.Jg Amorphous semiconductors; glasses
78.30.Hv Other nonmetallic inorganics
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Segregation and trapping of erbium at a moving crystal-amorphous Si interface

A. Polman, J. S. Custer, P. M. Zagwijn, A. M. Molenbroek, and P. F. A. Alkemade

J. Appl. Phys. 81, 150 (1997); http://dx.doi.org/10.1063/1.364002 (4 pages) | Cited 10 times

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Segregation and trapping of Er during solid-phase crystallization of amorphous Si on crystalline Si is studied in a concentration range of 1016–5×1020 Er/cm3. Amorphous surface layers are prepared on Si(100) by 250 keV Er ion implantation, recrystallized at 600 °C, and then analyzed using high-resolution Rutherford backscattering spectrometry using 2 MeV He+ or 100 keV H+. The segregation coefficient k depends strongly on Er concentration. At Er interface areal densities below 6×1013 Er/cm2 nearly full segregation to the surface is observed, with k=0.01. At higher Er densities, segregation and trapping in the crystal are observed, with k=0.20. The results are consistent with a model in which it is assumed that defects in the a-Si near the interface act as traps for the Er. © 1997 American Institute of Physics.
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68.35.Dv Composition, segregation; defects and impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.05.Cy Elemental semiconductors
61.72.uf Ge and Si
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Controlled cluster condensation into preformed nanometer-sized pits

H. Hövel, Th. Becker, A. Bettac, B. Reihl, M. Tschudy, and E. J. Williams

J. Appl. Phys. 81, 154 (1997); http://dx.doi.org/10.1063/1.364003 (5 pages) | Cited 48 times

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We have performed scanning tunneling microscopy (STM) in ultrahigh vacuum and transmission electron microscopy (TEM) on silver and gold clusters grown in preformed nanometer-sized pits on the surface of highly oriented pyrolytic graphite. We describe the preparation method and evaluate the three-dimensional shape of the clusters using a combination of STM and TEM applied to the same cluster sample. The nanometer-sized pits were essential to fix the clusters in position when using STM. The influence of the tip shape on the STM imaging of nanometer-sized clusters is discussed. © 1997 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology

Digital-image-based models of two-dimensional microstructural evolution by surface diffusion and vapor transport

Jeffrey W. Bullard

J. Appl. Phys. 81, 159 (1997); http://dx.doi.org/10.1063/1.364004 (10 pages) | Cited 14 times

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A new and versatile model of capillary-driven microstructural evolution is described. The model operates on digital images of microstructures, and uses the local phase distribution to form an interpolated “equivalent sharp surface.’’ Local surface properties, like outward normal vectors and curvatures, are calculated and local driving forces for mass transport are determined using standard irreversible thermodynamic concepts. Mass transport kinetics are simulated using discretized rate laws for a specified path and rate-controlling step. Models of surface diffusion and of surface-attachment-limited kinetics are described and applied to several systems. Results for simple microstructures agree well with analytical predictions of transport rates and scaling laws, and useful quantitative information is extracted from simulations on more complex microstructures for which analytical predictions do not exist. © 1997 American Institute of Physics.
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61.72.-y Defects and impurities in crystals; microstructure
68.35.Fx Diffusion; interface formation
68.35.Md Surface thermodynamics, surface energies
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