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Journal of Applied Physics / Volume 79 / Issue 9

J. Appl. Phys. 79, 7227 (1996); http://dx.doi.org/10.1063/1.361439 (7 pages)

Characterization of a‐C:H:N deposition from CH4/N2 rf plasmas using optical emission spectroscopy

K. J. Clay, S. P. Speakman, G. A. J. Amaratunga, and S. R. P. Silva

Engineering Department, Cambridge University, Trumpington Street, Cambridge CB2 1PZ, United Kingdom

(Received 10 October 1995; accepted 31 January 1996)

Optical emission spectra (OES) from CH4/N2 rf plasmas, which are used for the deposition of nitrogen‐containing hydrogenated amorphous carbon (a‐C:H:N) thin films, have been characterized. Previously unidentified spectral lines have been assigned to atomic N. Further identified species include CH, H, H2, N2, N+2, N, and CN. Variations between spectra from the pure CH4 or N2 plasmas and the mixed CH4/N2 plasma are discussed. The enhancement of excited nitrogen species, with the addition CH4, is attributed to Penning ionization. The observed OES variations of the CH4/N2 plasma with power, pressure, and CH4/N2 ratio are explained in terms of possible reaction mechanisms and their activation, and correlated with preliminary film growth characteristics. © 1996 American Institute of Physics.

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KEYWORDS and PACS

Keywords

CARBON, FILM GROWTH, AMORPHOUS STATE, NITROGEN ADDITIONS, PLASMA DIAGNOSTICS, EMISSION SPECTRA, CVD, IONIZATION, VISIBLE SPECTRA, ULTRAVIOLET SPECTRA, INFRARED SPECTRA

PACS

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

  • 82.33.Xj

    Plasma reactions (including flowing afterglow and electric discharges)

  • 68.55.-a

    Thin film structure and morphology

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.361439

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

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