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J. Appl. Phys. 79, 1416 (1996); http://dx.doi.org/10.1063/1.360979 (7 pages)

Tetrahedral amorphous carbon films prepared by magnetron sputtering and dc ion plating

J. Schwan1, S. Ulrich1, H. Roth1, H. Ehrhardt1, S. R. P. Silva2, J. Robertson2, R. Samlenski3, and R. Brenn3

1Universität Kaiserslautern, FB Physik, Schrödingerstrasse, D‐67663 Kaiserslautern, Germany
2Engineering Department, Cambridge University, Trumpington Street, Cambridge CB2 1PZ, United Kingdom
3Universität Freiburg, Fakultät für Physik, Hermann Herderstrasse 3, 79104 Freiburg, Germany

(Received 9 June 1995; accepted 17 October 1995)

Highly tetrahedral, dense amorphous carbon (ta‐C) films have been deposited using rf sputtering of graphite by an unbalanced magnetron with intense dc Ar‐ion plating at low temperatures (<70 °C). The ratio of the argon ion flux to neutral carbon flux Φin is about 5. The film density and compressive stress are found to pass through a maximum of 2.7 g/cm3 and 16 GPa, respectively, at an ion plating energy of about 100 eV. Experiments with higher ion flux ratios of Φin=10 show that it is possible to deposit carbon films with densities up to 3.1 g/cm3 and sp3 contents up to 87%. Deposition of ta‐C in this experiment when the energetic species is Ar appears to require a minimum stress of 14 GPa to create significant sp3 bonding, which contrasts with the continuous increase in sp3 content with stress when the energetic species is C ions themselves. These results are used to discuss possible deposition mechanisms. © 1996 American Institute of Physics.

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KEYWORDS and PACS

PACS

  • 68.55.-a

    Thin film structure and morphology

  • 68.60.Bs

    Mechanical and acoustical properties

  • 81.15.Cd

    Deposition by sputtering

ARTICLE DATA

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

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