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Journal of Applied Physics / Volume 75 / Issue 1

J. Appl. Phys. 75, 255 (1994); http://dx.doi.org/10.1063/1.355892 (4 pages)

Energies for atomic emissions from defect sites on the Si surfaces: The effects of halogen adsorbates

G. S. Khoo1, C. K. Ong2, Noriaki Itoh3, and Jyun’ich Kanasaki3

1Division on Physics, School of Science, Nanyang Technological University, 469 Bulkt Timah Road, Singapore 1025, Republic of Singapore
2Department of Physics, National University of Singapore, Kent Ridge, Singapore 0511, Republic of Singapore
3Department of Physics, Faculty of Science, Nagoya University, Furocho, Chikusaku, Nagoya 464‐01, Japan

(Received 8 July 1993; accepted 6 September 1993)

A study was made of the energies for ejection of Si atoms and SiCl molecules from defect sites on Si (100) and (110) surfaces, including adatoms, kinks, and vacancies, with and without interaction with Cl adsorbates. It is found that the energies for emitting a Si atom from defect sites are smaller than those for the perfect site and almost proportional to the coordination number for the Si (110) surface. It is also found that the interaction of Cl with defects reduces the energy for the ejection of a Si atom and a SiCl molecule, depending on the adsorption site.

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KEYWORDS and PACS

Keywords

SILICON, SURFACE PROPERTIES, ADSORBATES, CHLORINE, DEFECT STATES, ETCHING, ADATOMS, VACANCIES, DESORPTION

PACS

  • 68.35.Dv

    Composition, segregation; defects and impurities

  • 82.65.+r

    Surface and interface chemistry; heterogeneous catalysis at surfaces

  • 81.65.-b

    Surface treatments

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.355892

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

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    References

    K. Hattori, A. Okano, Y. Nakai, and N. Itoh, Phys. Rev. B 45, 8424 (1992).

    J. Kanasaki, A. Matsuura, Y. Nakai, and N. Itoh, Appl. Phys. Lett. 62, 3493 (1993APPLAB000062000026003493000001).

    J. Kanasaki, A. Okano, K. Ishikawa, Y. Nakai, and N. Itoh, Phys. Rev. Lett. 70, 2495 (1993).

    G. S. Khoo, C. K. Ong, and N. Itoh, Phys. Rev. B 47, 2031 (1993).

    G. S. Khoo, and C. K. Ong, Phys. Rev. B 47, 9346 (1993).

    N. Itoh, K. Hattori, Y. Nakai, J. Kanasaki, A. Okano, C. K. Ong, and G. S. Khoo, Appl. Phys. Lett. 60, 3271 (1992APPLAB000060000026003271000001).

    A. Okano, A. Y. Matsuura, K. Hattori, N. Itoh, and J. Singh, J. Appl. Phys. 73, 3158 (1993JAPIAU000073000007003158000001).


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