Homojunction diode of CuInSe2 thin film fabricated by nitrogen implantation

Nishitani, M.; Negami, T.; Kohiki, S.; Terauchi, M.; Wada, T.; Hirao, T.

doi:doi:10.1063/1.355296

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Journal of Applied Physics / Volume 74 / Issue 3

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J. Appl. Phys. 74, 2067 (1993); http://dx.doi.org/10.1063/1.355296 (4 pages)

Homojunction diode of CuInSe₂ thin film fabricated by nitrogen implantation

M. Nishitani, T. Negami, S. Kohiki, M. Terauchi, T. Wada, and T. Hirao

Central Research Laboratories, Matsushita Electric Industrial Co. Ltd., Moriguchi, Osaka 570, Japan

(Received 29 September 1992; accepted 9 April 1993)

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Rectifying homojunction have been fabricated in polycrystalline CuInSe₂ thin film. The p‐n junction diode was obtained by short annealing in nitrogen atmosphere at 450 °C following the ion implantation of nitrogen with the energy and the dose of 50 keV and 1×10¹⁵ cm⁻², respectively. The properties of the near surface region in the films implanted have been studied by the Raman scattering spectroscopy. The secondary ion mass spectroscopy depth profile of the nitrogens in the CuInSe₂ film and the capacitive‐voltage characteristics of the rectifying diode have been measured to characterize the junction properties. The photovoltaic characteristics in AM 1.0, 100 mW/cm² are shown with the efficiency of 0.35%.