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1 May 1993

Volume 73, Issue 9, pp. 4123-4727

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Manipulation of van der Waals forces to improve image resolution in atomic‐force microscopy

Jeffrey L. Hutter and John Bechhoefer

J. Appl. Phys. 73, 4123 (1993); http://dx.doi.org/10.1063/1.352845 (7 pages) | Cited 29 times

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Although the atomic force microscope (AFM) resembles superficially the scanning tunneling microscope (STM), its imaging resolution is in general much coarser. For the AFM, long‐range interactions—most notably the van der Waals force—imply that image resolution is set by the macroscopic tip radius rather than by a single atom, as with the STM. Experimentally, we show that van der Waals forces can be measured using an AFM. By immersing tip and sample in an appropriate fluid, we can effectively eliminate the van der Waals force, leading to a marked improvement in AFM image quality.
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers
07.50.-e Electrical and electronic instruments and components
07.55.-w Magnetic instruments and components
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Charge exchange of low energy ions in thin carbon foils. II. Results for ions of B, C, F, Ne, Na, Si, S, Cl, Ar, K, and Fe

Alfred Bürgi, Marc Gonin, Michael Oetliker, Peter Bochsler, Johannes Geiss, Thierry Lamy, Ariel Brenac, Horst Jürgen Andrä, Philippe Roncin, Henri Laurent, and Michael A. Coplan

J. Appl. Phys. 73, 4130 (1993); http://dx.doi.org/10.1063/1.352846 (10 pages) | Cited 9 times

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In order to calibrate a novel type of time‐of‐flight mass spectrometer to be flown in the solar wind, we have continued our investigation of the charge exchange of low energy ions passing thin carbon foils. We analyzed elements with widely different chemical properties: Ions of B, C, F, Ne, Na, Si, S, Cl, Ar, K, and Fe in the energy range 0.5–3 keV/u were passed through carbon foils with thicknesses between 1.1 and 10 μg/cm2, and their charge state distributions and residual energies were determined. It was found that (1) the charge state distribution behind the foil is independent of the charge of the incident projectile, (2) isotopes show the same charge exchange properties at equal velocities as we have found previously, (3) at the lowest energies the charge state distribution is no longer a function of the residual energy alone but depends on both residual energy and foil thickness, (4) probable differences in chemical properties between the front and back surfaces of the foil have no detectable influence on the charge exchange properties, and (5) strong electron shell effects manifest themselves when results for different elements are compared.
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34.70.+e Charge transfer
34.50.Fa Electronic excitation and ionization of atoms (including beam-foil excitation and ionization)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Stability and confinement of nonrelativistic sheet electron beams with periodic cusped magnetic focusing

John H. Booske, Brian D. McVey, and Thomas M. Antonsen

J. Appl. Phys. 73, 4140 (1993); http://dx.doi.org/10.1063/1.352847 (16 pages) | Cited 33 times

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Sheet electron beams focused by periodically cusped magnetic (PCM) fields are stable against low‐frequency velocity‐shear instabilities (such as diocotron mode). This is in contrast to more familiar unstable behavior in uniform solenoidal magnetic fields. Two rectangular‐cross‐section magnetic configurations capable of focusing in both transverse dimensions are investigated: (i) a closed‐side two‐plane PCM configuration that is topologically equivalent to conventional round‐cross‐section PPM focusing; and (ii) an open‐side configuration that uses ponderomotive PCM focusing in the vertical plane and simple vzBy Lorentz force focusing in the horizontal plane. Both configurations are capable of stable sheet beam confinement. The open‐side configuration appears more practical both for focusing and for realizing matched (cold) beam conditions in which the beam envelope is free from oscillations. For realistic beams with finite emittance, the existence of a matched cold beam solution implies less emittance growth at beam injection.
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41.85.Ja Particle beam transport
41.75.Fr Electron and positron beams
52.27.Jt Nonneutral plasmas
52.59.Px Hard X-ray sources

Gain and saturation parameters of a multichannel large‐area discharge CO2 laser

E. F. Yelden, H. J. J. Seguin, and C. E. Capjack

J. Appl. Phys. 73, 4156 (1993); http://dx.doi.org/10.1063/1.352848 (6 pages)

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Details of an experimental investigation of the gain and saturation intensity of a multichannel extended‐area discharge CO2 laser are presented. Measurements were made as a function of several discharge parameters. The gain coefficient was found to be similar in each of the individual discharge regions, having a maximum value of 0.70%/cm. Effects of gas pressure, gas mixture, and input power on gain and saturation parameters were studied. The saturation intensity varied as the square of the total gas pressure. The central interelectrode region of the device, which contained no visible discharge, exhibited a significant level of gain. The investigation reported herein provided important data for the design and optimization of optical extraction configurations.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Temperature dependence of dc drift of Ti:LiNbO3 optical modulators with sputter deposited SiO2 buffer layer

Hirotoshi Nagata and Kazumasa Kiuchi

J. Appl. Phys. 73, 4162 (1993); http://dx.doi.org/10.1063/1.352849 (3 pages) | Cited 12 times

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The temperature dependence of the dc drift of Mach–Zehnder external modulators is evaluated based on Ti diffused LiNbO3 with a sputter deposited SiO2 buffer layer. From Arrhenius’ plots of the results, activation energies of the drift rate between 25 and 80 °C were found to be about 1 eV. The activation energy seems to depend on the structural parameters of the SiO2 layer.
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42.79.Hp Optical processors, correlators, and modulators
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Control of thermocapillary convection in a liquid bridge by vibration

A. V. Anilkumar, R. N. Grugel, X. F. Shen, C. P. Lee, and T. G. Wang

J. Appl. Phys. 73, 4165 (1993); http://dx.doi.org/10.1063/1.352850 (6 pages) | Cited 16 times

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The streaming induced in a short vertical liquid column (L/R≤1, L: length, R: radius) by the vibration of one of the supporting end walls has been utilized in this novel study. Vibration essentially drives a surface flow in the zone away from the vibrating wall, with the return flow in the bulk towards the wall. Preliminary measurements of the surface streaming velocity show that it increases with the frequency and amplitude of vibration and the zone length, and decreases with the viscosity of the zone liquid. This controlled surface streaming has been employed to balance an opposing, steady thermocapillary flow in a model half‐zone of silicone oil. In addition to the evidence gathered through flow visualization, temperature measurements in the zone reveal that the radial temperature gradients set up by the thermocapillary flow are weakened/offset by this balancing.
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47.80.-v Instrumentation and measurement methods in fluid dynamics
44.25.+f Natural convection
81.10.Mx Growth in microgravity environments

A Monte Carlo simulation model for plasma source ion implantation

Dezhen Wang, Tengcai Ma, and Ye Gong

J. Appl. Phys. 73, 4171 (1993); http://dx.doi.org/10.1063/1.352851 (5 pages) | Cited 19 times

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Plasma source ion implantation is a process in which a target is immersed in a plasma and a series of large negative‐voltage pulses are applied to it to extract ions from the plasma and implant them into the target. A Monte Carlo simulation model is developed to study the energy and angle distributions of ions at the planar target for higher pressures of the neutral gas. Cross sections of the charge exchange and momentum transfer that depend on the ion energy are taken into account precisely. The energy and angle distributions of N2+ at the target during the sheath edge evolution for the different pressures are determined.
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52.40.Mj Particle beam interactions in plasmas
52.65.-y Plasma simulation
52.50.Dg Plasma sources

Measurement of ion species ratio in the plasma source ion implantation process

B. Y. Tang, R. P. Fetherston, M. Shamim, R. A. Breun, A. Chen, and J. R. Conrad

J. Appl. Phys. 73, 4176 (1993); http://dx.doi.org/10.1063/1.352852 (5 pages) | Cited 21 times

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Ion species and their ratios in nitrogen, oxygen, and argon plasmas in the plasma source ion implantation process have been determined with a simple and low‐cost measurement system. The measured ion species ratio in the nitrogen plasma was used as an input parameter for the computer simulation code transport and mixing from ion irradiation to predict the atomic composition‐depth profile. Comparison between the code results and data derived from Auger analysis for a nitrogen‐implanted Ti‐6Al‐4V alloy showed good agreement. In this article, the design, performance, and possible future improvements regarding the resolution of this measurement system will be discussed.
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52.70.Nc Particle measurements
61.72.up Other materials

Simulation of electron‐beam transport in low‐pressure gas conditioning cells

Richard F. Hubbard, Steven P. Slinker, Richard F. Fernsler, Glenn Joyce, and Martin Lampe

J. Appl. Phys. 73, 4181 (1993); http://dx.doi.org/10.1063/1.352853 (16 pages) | Cited 5 times

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The resistive hose instability can disrupt propagation of self‐pinched beams in dense gas. To reduce growth of the instability, beams can be conditioned prior to propagation. The objectives of beam conditioning are to center the beam in order to reduce initial transverse perturbations which seed the hose instability, and to ‘‘tailor’’ the beam emittance in order to detune the head‐to‐tail coherence of the instability. Emittance tailoring can be performed by transporting the beam through a ‘‘passive ion‐focused regime’’ (IFR) cell, a low‐pressure gas cell that induces a head‐to‐tail taper of the beam radius. The radius taper is then converted to an emittance taper by passing the beam through a thick exit foil which scatters the beam. Beam centering can be accomplished by transporting the beam through either: (i) a passive IFR cell that is narrow enough to provide wall guiding, or (ii) a laser‐ionized ‘‘active’’ IFR cell, or (iii) a wire cell in which the centering is provided by a current‐carrying wire. Axisymmetric particle simulation studies of IFR tailoring cells, alone and in tandem with each of these types of centering cells, and also the effect of supplementary focusing lenses and conducting foils are reported. The parameter choices that are conducive to effective beam conditioning are discussed. The emphasis is on conditioning configurations and beam parameters that have actually been tested in experiments with the Advanced Test Accelerator and SuperIBEX accelerator.
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52.40.Mj Particle beam interactions in plasmas
52.65.-y Plasma simulation
52.35.Py Macroinstabilities (hydromagnetic, e.g., kink, fire-hose, mirror, ballooning, tearing, trapped-particle, flute, Rayleigh-Taylor, etc.)

Monte Carlo simulation of electron behavior in an electron cyclotron resonance discharge

S. C. Kuo, E. E. Kunhardt, and S. P. Kuo

J. Appl. Phys. 73, 4197 (1993); http://dx.doi.org/10.1063/1.352824 (8 pages) | Cited 5 times

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Electron behavior in an electron cyclotron resonance microwave discharge maintained by the TM01 mode fields of a cylindrical waveguide has been investigated via a Monte Carlo simulation. Since this discharge has high degree of ionization (≥1%), a self‐consistent simulation of the plasma dynamics is achieved through the use of the ponderomotive and grad B (−μ∇∥B) forces. Accumulation of negative charges on the boundary surface sets up a sheath whose influence is also taken into account. The time averaged, spatially dependent electron energy distribution (EED) is computed self‐consistently by integrating electron trajectories subjected to the microwave fields, the divergent background magnetic field, the space charge field, and the sheath field, and taking into account electron–electron collisions and collisions with the neutral hydrogen atoms. The EED is characterized by two electron temperatures with the population of the tail increasing for decreasing pressure. At low pressures (∼0.5 mTorr), the sheath potential is on the order of 100 V and decreases with increasing pressure. This observation suggests a pressure range for operation of reactors for diamondlike carbon film deposition.
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52.65.-y Plasma simulation
52.40.Hf Plasma-material interactions; boundary layer effects
52.80.Pi High-frequency and RF discharges

Electromagnetic particle simulation of electron cyclotron resonance microwave discharge

Wook Hee Koh, Nak Heon Choi, Duk In Choi, and Yong Ho Oh

J. Appl. Phys. 73, 4205 (1993); http://dx.doi.org/10.1063/1.352825 (7 pages) | Cited 6 times

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We present a numerical model to study the electron cyclotron resonance (ECR) microwave discharge using a one‐dimensional electromagnetic particle‐in‐cell Monte Carlo collision method [C. K. Birdsall, IEEE Trans. Plasma Sci. 19, 65 (1991)]. In our model, the electromagnetic wave is polarized circularly and propagates along an external static magnetic field and elastic, excitational, and ionizing electron‐neutral collisions and elastic and charge exchange ion‐neutral collisions are included. The discharge for helium gas is simulated and the simulation results explain well the physical properties of the ECR discharge which include the energy absorption of electrons through ECR coupling, the propagation of microwave, the transports of the charged particles, and the effect of divergent external magnetic field.
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52.50.Gj Plasma heating by particle beams
52.65.-y Plasma simulation
52.80.-s Electric discharges

Reduction of plasma electron density in a gas ionized by an electron beam: Use of a gaseous dielectric

Max B. Reid

J. Appl. Phys. 73, 4212 (1993); http://dx.doi.org/10.1063/1.352826 (6 pages) | Cited 1 time

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Propagation of an electron beam through a gas creates a secondary electron/ion plasma which can have subsequent deleterious effects on the propagation of the beam. In the case of pulsed electron beams with short micropulse durations, these effects can be greatly reduced through the use of a small doping fraction of an electron attachment gas. We present a model which allows the calculation of the reduction in unbound plasma electron density attainable with a gaseous dielectric dopant. Potential problems with a dopant, including increased ionization, increased scattering, altered refractive index, and dopant saturation and fragmentation, are discussed.
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52.40.Mj Particle beam interactions in plasmas

Structural properties of heteroepitaxial systems using hybrid multiple diffraction in Renninger scans

S. L. Morelhão and L. P. Cardoso

J. Appl. Phys. 73, 4218 (1993); http://dx.doi.org/10.1063/1.352827 (9 pages) | Cited 10 times

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A method of characterizing heteroepitaxial structures using hybrid multiple diffractions (hybrid MD) which appear in the layer Renninger scans (RS) together with the normal MD features, is reported. The three beam surface MD cases are used to provide high intensity and structural sensitivity. The RS peak measurements around the symmetry mirrors allow for the layer parallel lattice parameter determination. A simulation program was developed in order to account for the influence of the wavelength, incident beam divergence, sample mosaic spread, and substrate/layer lattice misorientation in the correct position and profile of the RS peaks. GaAs/Si samples with different layer thicknesses have been analyzed as an application of the method.
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61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Principles for controlling the optical and electrical properties of hydrogenated amorphous silicon deposited from a silane plasma

Yoshihiro Hishikawa, Shinya Tsuda, Kenichiro Wakisaka, and Yukinori Kuwano

J. Appl. Phys. 73, 4227 (1993); http://dx.doi.org/10.1063/1.352828 (5 pages) | Cited 30 times

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The optical, electrical, and structural properties of hydrogenated amorphous silicon (a‐Si:H) films are systematically investigated as functions of the substrate temperature (Ts) and plasma parameters, such as the rf power, gas pressure, and electrode dimensions. The films are deposited by the plasma chemical vapor deposition method. The properties of a‐Si:H can be controlled over a wide range by varying the plasma parameters at fixed Ts. Reducing the film deposition rate and raising Ts have the same effect on the properties of a‐Si:H. A unified relationship is found to exist among those properties of a‐Si:H in the range of deposition conditions in this study, which includes ‘‘device‐quality’’ conditions. No apparent effects of gas‐phase polymerization or ion bombardment are observed. The experimental results suggest that during device‐quality a‐Si:H film deposition under conventional plasma conditions, the film properties are governed by a competition between the rate of film growth and the rate of thermally activated surface reactions at or near the film‐growing surface. The limitations on the controllability of plasma‐deposited a‐Si:H, especially at low Ts, can be surmounted by adding hydrogen or helium to the plasma, and by treating a‐Si:H with the hydrogen plasma.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Jc Amorphous semiconductors; glasses
78.66.Jg Amorphous semiconductors; glasses

Microstructural evaluation of strained multilayer InAsSb/InSb infrared detectors by transmission electron microscopy

Saket Chadda, Abhaya Datye, and L. Ralph Dawson

J. Appl. Phys. 73, 4232 (1993); http://dx.doi.org/10.1063/1.352802 (8 pages) | Cited 1 time

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InSb/InAsSb strained layer superlattices (SLS) were grown on (001) InSb substrates by molecular beam epitaxy at 425 °C. The active device consisted of an InAs0.15Sb0.85/InSb superlattice region embedded within a p‐i‐n junction. The large lattice mismatch between the active device and the substrate required the growth of a buffer. InAs0.15Sb0.85/InSb SLS, where the average As content was gradually increased, was used as a buffer. The buffer structure was varied to probe its microstructural effect on the capping device. Three distinct approaches (A, B, and C) were used to grow the buffer. Approach A was a four‐step buffer where the average content of As in the superlattice was increased in four equal composition steps. This approach led to a crystal with an extensive network of threading dislocations and microcracks. Approach B was to change the average composition in five equal composition steps, thereby decreasing the misfit at the interfaces between composition steps. This led to a decrease in the threading dislocation density but microscopic cracks were still evident. The last approach (C) was to employ migration enhanced epitaxy (MEE) for the growth of the five‐step buffer. Samples grown by employing MEE revealed no microcracks but they contained a high density of unusual ‘‘wiggly’’ dislocations at the buffer/device interface. Detailed microstructural analysis by transmission electron microscopy is presented.  
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68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
68.55.-a Thin film structure and morphology
85.60.Gz Photodetectors (including infrared and CCD detectors)

Study of alpha‐radiation‐induced deep levels in p‐type silicon

M. Asghar, M. Zafar Iqbal, and N. Zafar

J. Appl. Phys. 73, 4240 (1993); http://dx.doi.org/10.1063/1.352803 (8 pages) | Cited 10 times

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Deep levels introduced by 5.48 MeV alpha particles in p‐type silicon have been studied using deep‐level transient spectroscopy. The generation rates of these defects have been obtained up to a dose of 1.2×1011 α particles/cm2. Detailed data have been obtained on the electrical characteristics of the two deep levels in the lower‐half band gap at Ev+0.21 eV and Ev+0.35 eV and one level in the upper‐half gap of silicon at Ec−0.25 eV introduced by irradiation. These characteristics include emission rate signatures, carrier capture cross sections, and their temperature dependence and deep‐level concentrations. Detailed isochronal annealing measurements have been performed to obtain data on the annealing behavior of the deep‐level defects and also to help identify these centers. Some interesting phenomena relating to temporal changes in our deep level spectra stimulated by minority carrier injection have been observed and discussed in the light of the available literature on radiation‐induced defects in silicon.
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71.55.Cn Elemental semiconductors
61.80.Jh Ion radiation effects
61.72.Cc Kinetics of defect formation and annealing

Annealing of Cd‐implanted GaAs: Defect removal, lattice site occupation, and electrical activation

N. Moriya, I. Brener, R. Kalish, W. Pfeiffer, M. Deicher, R. Keller, R. Magerle, E. Recknagel, H. Skudlik, Th. Wichert, and H. Wolf

J. Appl. Phys. 73, 4248 (1993); http://dx.doi.org/10.1063/1.354039 (9 pages) | Cited 8 times

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A systematic investigation of the behavior of Cd‐implanted GaAs after rapid thermal annealing is presented. The use of various experimental techniques gives a detailed picture regarding the annealing process in the low‐dose regime (1012 and 1013 cm−2) on a microscopic as well as on a macroscopic scale. Perturbed angular correlation experiments, using the radioactive probe 111mCd, yield information on the immediate environment of the Cd implant on an atomic scale. Rutherford backscattering channeling and photoluminescence spectroscopy give complementary information concerning the overall damage level in the implanted layer, Hall measurements are used to determine the degree of electrical activation of the implanted Cd acceptors. The outdiffusion of the implanted radioactive Cd atoms is also investigated. The removal of defects in the next‐nearest neighborhood of the Cd atoms takes place after annealing at 700 K and is accompanied by a general recovering of the crystal lattice. Between 600 and 900 K more distant defects are removed. The observed outdiffusion of about one‐third of the dopant atoms after annealing above 600 K is discussed in context with their partial incorporation in extended defects. Although already at 700 K, 80% of the implanted Cd atoms are on substitutional lattice sites with no defects in their immediate environment, an annealing temperature in excess of 1000 K is necessary to obtain electrical activation of the implants. It is concluded that compensating defects, present in ion‐implanted GaAs, are the reason for the significantly higher temperature required for electrical activation as compared to the incorporation of the dopants on defect‐free, substitutional lattice sites.
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61.72.uj III-V and II-VI semiconductors
61.72.Cc Kinetics of defect formation and annealing
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
76.80.+y Mössbauer effect; other γ-ray spectroscopy

Electronic stopping powers for energetic protons in solids in the low‐ and intermediate‐energy regions

You‐Nian Wang, Teng‐Cai Ma, and Tao Cui

J. Appl. Phys. 73, 4257 (1993); http://dx.doi.org/10.1063/1.352804 (3 pages) | Cited 3 times

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With linear‐response dielectric theory and the method of local density approximation, electronic stopping powers for protons in solids are calculated in the low‐ and intermediate‐energy regions. Comparison of theoretical predictions with experimental data is made for several targets.
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61.85.+p Channeling phenomena (blocking, energy loss, etc.)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
34.50.Bw Energy loss and stopping power

The long‐range‐order structures of III‐V semiconductor alloys

Jun Ni, Xinchun Lai, and Binglin Gu

J. Appl. Phys. 73, 4260 (1993); http://dx.doi.org/10.1063/1.352805 (6 pages) | Cited 6 times

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The concentration wave method is used to determine the ordered structures appearing in the epilayers of III‐V semiconductor alloys. Based on a two‐dimensional planar model, possible ordered structures of zinc‐blende structure are deduced. Some experimental features are explained. Phase diagrams of interaction parameters are given.
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61.50.Ks Crystallographic aspects of phase transformations; pressure effects
68.55.-a Thin film structure and morphology
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
64.60.Cn Order-disorder transformations

Depth profiles of ion‐implanted fluorine in tin‐oxide films prepared by atmospheric‐pressure chemical vapor deposition

Chunyu Tan, Yueyuan Xia, Youpeng Chen, Shuying Li, Jitian Liu, Xiangdong Liu, Bingzhang Xu, Jinhua Li, and Wenjiang Cao

J. Appl. Phys. 73, 4266 (1993); http://dx.doi.org/10.1063/1.352806 (4 pages) | Cited 3 times

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Depth profiles of fluorine in 19F+‐implanted tin‐oxide films have been accurately measured using 19F(p,αγ)16O resonance nuclear reactions at ER=872.1 keV and ER=340.46 keV. A proper deconvolution calculation method was used to extract the true range distribution of implanted fluorine from the experimental excitation yield curves. The range distribution parameters, RP and ΔRp, were thereby obtained and were compared with those obtained by Monte Carlo simulations. The experimental Rp values agree with the Monte Carlo simulation values very well, while the experimental ΔRp values are larger than those obtained theoretically. This phenomenon may be attributed to the enhanced diffusion during the ion implantation.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.up Other materials

Simple expressions for elastic constants c11, c12, and c44 and internal displacements of semiconductors

Shinji Muramatsu and Michihide Kitamura

J. Appl. Phys. 73, 4270 (1993); http://dx.doi.org/10.1063/1.352807 (3 pages) | Cited 7 times

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Simple expressions are given for elastic stiffness constants c11, c12, and c44 and Kleinman’s internal displacement parameter ζ. They all are represented by the bulk modulus and covalency alone, and predict fairly well the experimental results. These expressions are useful for getting a simple estimate of ζ as well as c11, c12, and c44.  
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62.20.D- Elasticity

Description of the exponent in the Bodner–Partom model based on deformation kinetics theory

A. S. Krausz and K. Krausz

J. Appl. Phys. 73, 4273 (1993); http://dx.doi.org/10.1063/1.352808 (5 pages)

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The Bodner–Partom model defines the constitutive law of plastic deformation for a large range of materials with a system that is economical for computer processing. Because the model was designed to combine physically defined concepts with empirical descriptions it is of interest to extend its validity by expressing the empirical exponent, which represents temperature dependence, in terms of macroscopic and material characteristic quantities derived rigorously from basic physical principles in the context of deformation kinetics theory. The expression derived provides guidance for the development of improved material properties, testing methods, manufacturing process and product design, and maintenance procedures.
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83.10.Bb Kinematics of deformation and flow
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity

The lattice strains in a specimen (cubic system) compressed nonhydrostatically in an opposed anvil device

Anil K. Singh

J. Appl. Phys. 73, 4278 (1993); http://dx.doi.org/10.1063/1.352809 (9 pages) | Cited 133 times

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A general expression has been derived using anisotropic elasticity theory for the lattice strain which corresponds to the x‐ray diffraction measurement on the polycrystalline specimen (cubic system) compressed nonhydrostatically in an opposed anvil device. The expressions for the various diffraction geometries emerge as the special cases of this equation. The strain calculated using isotropic elasticity theory corresponds to the macroscopic strain in the specimen, and can be obtained from the present equation by letting the anisotropy factor 2(S11−S12)/S44=1. Further, it is shown that the ratio of the lattice strain to the macroscopic strain (in the direction of the lattice strain) produced by the deviatoric stress component depends on the Miller indices (hkl) of the lattice planes and the elastic anisotropy factor. This ratio is unity only if the crystallites constituting the specimen are elastically isotropic, and increases with increasing anisotropy of the crystallites.
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62.50.-p High-pressure effects in solids and liquids
81.40.Vw Pressure treatment

A theoretical model for the density distribution of mobile ions in the oxide of metal‐oxide‐semiconductor structures

V. Mitra, H. Bentarzi, R. Bouderbala, and A. Benfdila

J. Appl. Phys. 73, 4287 (1993); http://dx.doi.org/10.1063/1.352810 (5 pages)

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A theoretical model for the density distribution of the mobile ions in the oxide of a metal‐oxide‐semiconductor structure is developed. It is based on the concept that at any point in the oxide the equilibrium concentration of these mobile ions is attained when the combined mobilizing forces, namely, thermal diffusion, internal, and external electric fields, become just sufficient to provide necessary activation energy to the ions to surmount the effective potential well. All these forces, acting on a single ion, have been obtained independent of each other and then combined to yield the equilibrium density distribution of the mobile ions. The results of the present model are consistent and in good agreement with earlier experimental results.
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66.30.H- Self-diffusion and ionic conduction in nonmetals
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Atomic transport in thermal spike induced ion mixing

K. H. Chae, J. H. Song, S. M. Jung, H. G. Jang, J. J. Woo, K. Jeong, C. N. Whang, Y. J. Oh, and H. J. Jung

J. Appl. Phys. 73, 4292 (1993); http://dx.doi.org/10.1063/1.352811 (5 pages) | Cited 3 times

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A simple relationship between the ratio of atomic transport induced by ion mixing and the activation energies for the impurity diffusion of constituents in a bilayer is presented to describe quantitatively the symmetric and asymmetric atomic transport in the thermal spike induced ion mixing. The model predicts fairly satisfactorily the trend of experimental observations in the bilayer systems which have near zero heats of mixing and relatively high spike activation energies. For instance, the Pd/Co bilayer system shows nearly symmetric atomic transport, since its constituents have similar activation energies for the impurity diffusion.
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66.30.J- Diffusion of impurities
61.80.Jh Ion radiation effects
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