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J. Appl. Phys. 72, 1512 (1992); http://dx.doi.org/10.1063/1.351718 (9 pages)

Optical and structural properties of ternary alloy AlxGa1−xAs/AlAs multiple‐quantum‐well structures

M. Dabbicco1, R. Cingolani1, M. Ferrara1, L. Tapfer2, A. Fischer3, and K. Ploog3

1Unitá GNEQP, Dipartimento di Fisica dell’Universitá di Bari, I‐70126 Bari, Italy
2Centro Nazionale per la Ricerca e lo Sviluppo dei Materiali, I‐72023 Mesagne (BR), Italy
3Max‐Planck‐Insitut für Festkörperforschung, D‐7000 Stuttgart 80, Germany

(Received 14 January 1992; accepted 16 April 1992)

The linear and nonlinear optical properties of a series of ternary alloy AlxGa1−xAs/AlAs multiple‐quantum‐well structures have been investigated and related to the multilayer configuration. The direct energy gap was found to scale with the AlAs mole fraction as predicted by Lee and Yuravel [Phys. Rev. B 21, 659 (1980)] and the band offset ratio to depend on the alloy composition. Exciton absorption bleaching was observed at room temperature and the nonlinear absorption cross sections were estimated for the first two confined excitonic states. Finally, the possibility of achieving optical gain for the type‐II band alignment along the growth direction as well as in the layer plane is demonstrated.

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KEYWORDS and PACS

PACS

  • 78.66.Fd

    III-V semiconductors

  • 78.66.Hf

    II-VI semiconductors

  • 78.45.+h

    Stimulated emission

  • 42.65.Pc

    Optical bistability, multistability, and switching, including local field effects

  • 68.65.-k

    Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

ARTICLE DATA

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

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