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J. Appl. Phys. 70, 4623 (1991); http://dx.doi.org/10.1063/1.349100 (3 pages)
Boundary conditions for the heterojunction interfaces of nonparabolic semiconductors
(Received 15 April 1991; accepted 18 July 1991)
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Add to FacebookTransmission probability curves are presented for InAs/Al0.4Ga0.6Sb/InAs tunnel diodes which show that for a 2‐nm‐barrier width, negative differential conductance (NDC) is indicated if the velocity effective mass is used to match the derivatives of the wave functions at the heterojunction interfaces, while the use of the energy‐effective mass does not indicate an NDC. It is suggested that an experiment with such a diode may resolve the controversy about the effective mass, to be used for matching the derivatives.
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R. Beresford, L. F. Luo, and W. L. Wang, Appl. Phys. Lett. 54, 1899 (1989APPLAB000054000019001899000001).J. R. S
derstrom, D. H. Chow, and T. C. McGill, Appl. Phys. Lett. 55, 1348 (1989APPLAB000055000013001348000001). B. R. Nag and Sanghamitra Mukhopadhyay, Appl. Phys. Lett. 58, 1056 (1991APPLAB000058000010001056000001).
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