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Journal of Applied Physics / Volume 70 / Issue 10

J. Appl. Phys. 70, 5374 (1991); http://dx.doi.org/10.1063/1.350219 (6 pages)

Influence of dc bias voltage on the refractive index and stress of carbon‐diamond films deposited from a CH4/Ar rf plasma

Gehan A. J. Amaratunga1, S. Ravi P. Silva1, and David R. McKenzie2

1Engineering Department, Cambridge University, Trumpington Street, Cambridge CB2 1PZ, United Kingdom
2Department of Applied Physics, University of Sydney, NSW 2006, Australia

(Received 22 April 1991; accepted 9 August 1991)

The dc self bias voltage developed during CH4/Ar radio frequency plasma‐enhanced vapor deposition of thin films containing polycrystalline diamond grains within an a:C matrix (carbon‐diamond) is found to influence the optical and mechanical properties of the films. In particular it is shown that there is a simultaneous etch deposition process which takes place, and that the dc bias can be used to control this etch rate, and hence the net film growth rate. When a balance between etching and deposition is achieved, the films show increased residual stress and optical density with exposure to Ar+ bombardment in the plasma. In addition to the measured dc bias the local electric field developed around the substrate is also found to significantly influence the energy with which ions impinge upon the growing film.  

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KEYWORDS and PACS

Keywords

DIAMONDS, CARBON, THIN FILMS, REFRACTIVE INDEX, STRESSES, CHEMICAL VAPOR DEPOSITION, ARGON IONS

PACS

  • 68.60.Bs

    Mechanical and acoustical properties

  • 78.66.-w

    Optical properties of specific thin films

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.350219

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

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    References

    G. Amaratunga, A. Putnis, K. Clay, and W. Milne, Appl. Phys. Lett. 55, 634 (1989APPLAB000055000007000634000001).

    H. Windischmann and G. F. Epps, J. Appl. Phys. 68, 5665 (1990JAPIAU000068000011005665000001).

    D. R. McKenzie, L. Botten, and R. McPhedran, Phys. Rev. Lett. 51, 280 (1983).


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