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1 Feb 1989

Volume 65, Issue 3, pp. 887-1386

Page 2 of 4 Pages Previous Page Next Page | Jump to Page

Plasma‐enhanced chemical vapor deposition of in situ doped epitaxial silicon at low temperatures. I. Arsenic doping

James H. Comfort and Rafael Reif

J. Appl. Phys. 65, 1053 (1989); http://dx.doi.org/10.1063/1.343040 (14 pages) | Cited 15 times

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In situ arsenic doping of epitaxial silicon films deposited from 700 to 800 °C by both very‐low‐pressure chemical vapor deposition (VLPCVD) and plasma‐enhanced chemical vapor deposition (PECVD) has been investigated. The growth rate and morphology of films deposited by silane VLPCVD are degraded in the presence of arsine. The overall activation energy for deposition increases and the apparent silane reaction order decreases relative to VLPCVD in the absence of arsine. VLPCVD arsenic incorporation depends sublinearly on the arsine partial pressure and appears to saturate for incorporation fractions above 1018 As atoms/cm3. PECVD growth rates are less sensitive to arsine, and plasma enhancement is seen to provide significant advantages for n‐type doping of epitaxial silicon at low temperatures. PECVD deposits show an order‐of‐magnitude increase in active dopant incorporation, exhibit superior morphology relative to VLPCVD, and allow for increased doping flexibility. Incorporation remains proportional to arsine partial pressures over the entire range investigated and allows for doping to at least 7×1019 As atoms/cm3 for PECVD. Both VLPCVD and PECVD arsenic‐incorporation fractions increase with decreasing temperature. PECVD incorporation also exhibits a weak plasma power dependence. Ion‐bombardment‐induced disruption of arsenic surface aggregation is proposed to account for the observed doping behavior and plasma enhancement. A companion paper discusses boron doping during low‐temperature epitaxial growth.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Plasma‐enhanced chemical vapor deposition of in situ doped epitaxial silicon at low temperatures. II. Boron doping

James H. Comfort and Rafael Reif

J. Appl. Phys. 65, 1067 (1989); http://dx.doi.org/10.1063/1.343041 (7 pages) | Cited 14 times

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A comparison of in situ boron doping of epitaxial silicon films deposited from 700 to 800 °C by both very‐low‐pressure chemical vapor deposition (VLPCVD) and plasma‐enhanced chemical vapor deposition (PECVD) is presented. Neither the growth rate nor the morphology of films deposited by silane VLPCVD or PECVD are affected by the addition of up to 500 ppm diborane at a total pressure of 6 mTorr. VLPCVD and PECVD boron incorporation depends linearly on diborane partial pressures, and films doped to 1020 B atoms/cm3 have been prepared. VLPCVD boron incorporation is found to increase with increasing temperature. No significant increase in boron incorporation is observed with increasing power for PECVD. Surface decomposition of diborane under low surface coverage conditions is proposed as the rate‐controlling step for boron incorporation during doped epitaxial growth at low temperatures. Doping profiles with uniform concentrations in the range 1016–1020 B atoms/cm3 are readily achieved at low temperatures by VLPCVD from diborane‐silane mixtures without the need for plasma enhancement.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Properties of hydrogenated amorphous germanium nitrogen alloys prepared by reactive sputtering

I. Honma, H. Kawai, H. Komiyama, and K. Tanaka

J. Appl. Phys. 65, 1074 (1989); http://dx.doi.org/10.1063/1.343042 (9 pages) | Cited 13 times

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Hydrogenated amorphous germanium‐nitrogen alloys (a‐GeNx:H) were synthesized as a new group of amorphous semiconductors by rf(13.56 MHz) reactive sputtering of a Ge target in a gas mixture of Ar+N2+H2 under a variety of deposition conditions such as gas ratio, rf‐discharge power, and substrate temperature. Structural, optical, and electrical properties of those a‐GeNx:H alloys were systematically measured and are discussed in relation to their preparation conditions. The optical band gap E04 of a‐GeNx:H alloys could be continuously controlled in the range from 1.1 eV to 3.3 eV primarily depending on the atomic N/Ge ratio in the film. The role of hydrogen and nitrogen in the optical and electrical properties of the material is also crucially demonstrated.
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68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
78.66.-w Optical properties of specific thin films
81.15.Cd Deposition by sputtering

Characterization of InP/GaAs/Si structures grown by atmospheric pressure metalorganic chemical vapor deposition

S. J. Pearton, K. T. Short, A. T. Macrander, C. R. Abernathy, V. P. Mazzi, N. M. Haegel, M. M. Al‐Jassim, S. M. Vernon, and V. E. Haven

J. Appl. Phys. 65, 1083 (1989); http://dx.doi.org/10.1063/1.343043 (6 pages) | Cited 12 times

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The thickness dependence of material quality of InP‐GaAs‐Si structures grown by atmospheric pressure metalorganic chemical vapor deposition was investigated. The InP thickness was varied from 1–4 μm, and that of the GaAs from 0.1–4 μm. For a given thickness of InP, its ion channeling yield and x‐ray peak width were essentially independent of the GaAs layer thickness. The InP x‐ray peak widths were typically 400–440 arcsec for 4‐μm‐thick layers grown on GaAs. The GaAs x‐ray widths in turn varied from 320–1000 arcsec for layer thicknesses from 0.1–4 μm. Cross‐sectional transmission electron microscopy showed high defect densities at both the InP‐GaAs and GaAs‐Si interfaces. In 4‐μm‐thick InP layers the average threading dislocation density was in the range (3–8)×108 cm−2 with a stacking fault density within the range (0.4–2)×108 cm2. The He+ ion channeling yield near the InP surface was similar to that of bulk InP (χmin∼4%), but rose rapidly toward the InP‐GaAs heterointerface where it was typically around 50% for 1‐μm‐thick InP layers. All samples showed room‐temperature luminescence, while at 4.4 K, exciton‐related transitions, whose intensity was a function of the InP thickness, were observed.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Implantation temperature dependence of electrical activation, solubility, and diffusion of implanted Te, Cd, and Sn in GaAs

S. J. Pearton, J. S. Williams, K. T. Short, S. T. Johnson, D. C. Jacobsen, J. M. Poate, J. M. Gibson, and D. O. Boerma

J. Appl. Phys. 65, 1089 (1989); http://dx.doi.org/10.1063/1.343044 (10 pages) | Cited 17 times

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The relationship between electrical activity, dopant solubility, and diffusivity was investigated as a function of the substrate temperature during implantation of Te, Cd, and Sn ions into GaAs. Implant doses of these species in the range 5×1012–5×1015 cm−2 were performed in the temperature range −196 to 400 °C, followed by either transient (950 °C, 5 s) or furnace (450–900 °C, 20 min) annealing. The redistribution after such annealing was found to depend on the implant temperature, and was always greatest for Cd followed by Sn and Te. The degree of electrical activation was in the same order, but there was essentially no correlation of electrical activity with dopant solubility. Te, for example, showed soluble fractions of ∼90% for a dose of 1015 cm−2 after annealing at 850 °C or higher, regardless of the initial implant temperature. By sharp contrast, the electrically active fraction under these conditions was in the range 0.8%–3.4%. There was also no apparent correlation of the degree of electrical activity with the presence of defects visible in transmission electron microscopy. The energy required to activate the implanted ions fell broadly into two categories: ‘‘low’’ values in the range ∼0.4–0.8 eV (which included Cd implanted or annealed under any condition, and elevated temperature implants of Sn and Te), and ‘‘high’’ values in the range 1.7–1.9 eV [which included implants of Sn and Te performed at −196 °C, or high dose (1015 cm−2) room‐temperature implants of these species].
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61.72.Bb Theories and models of crystal defects
61.72.U- Doping and impurity implantation
66.30.J- Diffusion of impurities
72.80.Ey III-V and II-VI semiconductors

X‐ray photoelectron spectroscopy study of Si‐C film growth by chemical vapor deposition of ethylene on Si(100)

P. A. Taylor, M. Bozack, W. J. Choyke, and J. T. Yates

J. Appl. Phys. 65, 1099 (1989); http://dx.doi.org/10.1063/1.343045 (7 pages) | Cited 21 times

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The growth of a thin film of SiC grown by chemical vapor deposition (CVD) of ethylene on Si(100) at 970 K was studied by x‐ray photoelectron spectroscopy (XPS). The growth of the film was observed through the behavior of the Si(2p) and C(1s) core levels and their plasmon losses. A 1.2‐eV (towards higher binding energy) shift is observed for the Si(2p) binding energy between silicon in Si(100) and silicon in SiC. The plasmon loss energies measured as a function of film thickness below the C(1s) emission indicate that the C/Si ratio of the Si‐C film throughout the CVD process is fairly constant.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.65.-b Surface treatments
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Low‐temperature polycrystalline Si film growth on amorphous insulators by reactive ion beam deposition

Hiroshi Yamada and Yasuhiro Torii

J. Appl. Phys. 65, 1106 (1989); http://dx.doi.org/10.1063/1.343046 (6 pages) | Cited 5 times

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Polycrystalline Si (polysilicon) film growth on amorphous insulators, such as borosilicate glass, fused quartz, silicon oxide films, and silicon nitride films, was investigated by using the reactive ion beam deposition (RIBD) method proposed recently. The RIBD method is based on the use of reactive ionized species produced from SiH4 electron‐cyclotron‐resonance plasma and controlled in the low‐energy region of less than 500 eV. Polysilicon films can be grown at the low temperature of 250 °C. In the growth temperature range between 550 and 700 °C, polysilicon films with the strong Si(220)‐preferred orientation parallel to the substrate surface can be obtained. X‐ray diffraction intensity corresponding to Si(220) lattice planes was clearly dependent on ion energy, which presented a maximal level at 70–130 eV.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Passivation of bulk trapping levels in cadmium telluride by proton implantation

B. Biglari, M. Samimi, M. Hage‐Ali, J. M. Koebel, and P. Siffert

J. Appl. Phys. 65, 1112 (1989); http://dx.doi.org/10.1063/1.343047 (6 pages) | Cited 10 times

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A passivation of deep levels in the bulk has been observed by thermally stimulated currents and photoinduced current transient spectroscopy for well‐defined conditions of hydrogen implantation into high‐resistivity, chlorine‐compensated traveling heater method grown CdTe crystals. The influence of ion‐induced damage during implantation has been evaluated and the passivation effect on deep levels in the bulk, especially in the range 0.3–0.4 eV, has been clearly identified. This passivation introduces a strong increase of the mobility carrier lifetime product, as shown by photoconductivity measurements, as well as an increase of resistivity. Finally, the stability of this compensation by hydrogen has been investigated.
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71.55.Gs II-VI semiconductors
61.72.U- Doping and impurity implantation
61.80.Jh Ion radiation effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Photothermal ionization spectroscopy of donors in high‐purity germanium

L. S. Darken

J. Appl. Phys. 65, 1118 (1989); http://dx.doi.org/10.1063/1.343048 (8 pages) | Cited 1 time

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The results of narrow linewidth (0.10 cm−1 FWHM) photothermal ionization spectroscopy (PTIS) investigations of shallow donors in high‐purity germanium are reported. The donors observed include phosphorus, arsenic, lithium, a hydrogen‐oxygen complex, and three lithium‐related complexes. One lithium‐related complex designated D(Li,Y) is reported here for the first time. Within experimental accuracy, energies of the excited states with respect to the conduction band are the same for all donors. Fourteen different 1S→excited state transitions (five previously unreported, two others seen for the first time in PTIS from the ground state) have been observed. The Zeeman effect was used to help identify these levels. PTIS lines from the ground state to 2P0 and 3P0 were found to be relatively weak but their intensity was in good agreement with the intensity calculated by means of the Cascade theory. In as‐grown samples, linewidth broadening of group V donors was observed that depended on the square root of the dislocation density (etch pit density) and with features expected from deformation potential theory.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
71.55.Ht Other nonmetals
72.40.+w Photoconduction and photovoltaic effects
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Deep‐level transient spectroscopy study of n‐type GaAs epitaxial layers grown by close‐spaced vapor transport

G. Massé, J. M. Lacroix, and M. F. Lawrence

J. Appl. Phys. 65, 1126 (1989); http://dx.doi.org/10.1063/1.343049 (4 pages) | Cited 2 times

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We have done a deep‐level transient spectroscopy study of deep donor traps existing in n‐type GaAs epitaxial layers grown by close‐spaced vapor transport. All the samples exhibited a bulk trap having an important concentration (≳1014 cm−3), which we have noted ELCS1 and identified with the trap EL12, which was observed in vapor‐phase epitaxy materials. Other bulk traps were observed in some samples, but in a weaker concentration (∼1013 cm−3). In other samples, in addition to ELCS1, two more traps were seen; their concentration increased towards the surface. One of them is probably localized near the surface; the other one (ΔEa=0.83 eV, σna=0.8×10−13 cm2) must be identified with the donor trap EL2; it is also present in the bulk, but with a lower concentration.
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71.55.Eq III-V semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Observation of a deep level due to In doping in p‐type GaAs

S. R. Smith, A. O. Evwaraye, and W. C. Mitchel

J. Appl. Phys. 65, 1130 (1989); http://dx.doi.org/10.1063/1.343050 (3 pages) | Cited 1 time

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We have observed a peak in deep‐level transient spectroscopy DLTS spectra due to the presence of In in mph type='1' p‐type GaAs samples. Both In‐doped and nominally undoped samples of GaAs grown from a Ga‐rich melt were examined. We observed an electron trap at Ev+0.095 eV in the In‐doped material. Annealing experiments indicated that the trap level may be generated in In‐doped material when not present in measurable quantities in as‐grown crystals. However, annealing undoped samples under identical conditions failed to produce the level. We conclude that the electron trap is related to the presence of In in the p‐type GaAs.
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71.55.Eq III-V semiconductors

The slow‐mode surface plasmon in planar metal‐oxide‐metal tunnel junctions

J. B. D. Soole and C. D. Ager

J. Appl. Phys. 65, 1133 (1989); http://dx.doi.org/10.1063/1.343051 (7 pages) | Cited 8 times

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We present calculations of the properties of the slow‐mode surface plasmon supported by certain planar metal‐oxide‐metal tunnel junctions. We study the Al–Al oxide–Ag and Al–Al oxide–Au device structures commonly used in light‐emission experiments and give the dispersion, propagation decay length, and field profile of the mode in devices of typical dimensions over the energy range 1.4–3.8 eV. We also consider the dependence of the dispersion and decay length on the thickness of the oxide barrier and the likely effect of interface roughness. The bearing of these results on roughness‐coupled interconversion between the slow‐ and fast‐mode plasmons is discussed, and we comment on the possibilty of obtaining radiation directly from the slow mode.
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73.40.Rw Metal-insulator-metal structures
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.66.Sq Composite materials

Conduction mechanisms in sputtered Ta2O5 on Si with an interfacial SiO2 layer

S. Banerjee, B. Shen, I. Chen, J. Bohlman, G. Brown, and R. Doering

J. Appl. Phys. 65, 1140 (1989); http://dx.doi.org/10.1063/1.343052 (7 pages) | Cited 43 times

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The temperature dependence of leakage in sputtered Ta2O5 films (10–30 nm) on Si substrates with an interfacial SiO2 layer has been studied for temperatures between –50 and +100 °C and for electric fields between 0 and 2 MV/cm. The activation energy of leakage and the current‐voltage relationships have been used to identify various high field conduction mechanisms such as Poole–Frenkel transport at high temperatures and field emission at low temperatures. At low fields and intermediate temperatures, electronic hopping conduction leading to space‐charge‐limited flow at high current densities has been observed.
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73.61.Ng Insulators
81.40.Rs Electrical and magnetic properties related to treatment conditions
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
79.70.+q Field emission, ionization, evaporation, and desorption

Measurements and simulation of the spatial charge distribution in electron‐beam‐irradiated polymers

T. Maeno, T. Futami, H. Kushibe, and T. Takada

J. Appl. Phys. 65, 1147 (1989); http://dx.doi.org/10.1063/1.343053 (5 pages) | Cited 6 times

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The amount and profile of the charge distribution in a polymethyl methacrylate plate of 7.9‐mm thickness were measured after electron beam irradiation. When the plate was irradiated by a beam whose energy was 1 MeV and the total dose was 3 kGy, a spatial charged layer was produced at approximately 2.5 mm from the irradiated side. The maximum charge density was 1.7 μC/cm3 . The charges of the irradiated side decayed faster than the charges which accumulated at positions further away from the irradiated side in the specimen. Computer simulations were carried out to study the charge decay phenomena, assuming that shallow trap levels were created at the irradiated side by the electron beam. The time dependence of the accumulated charge distribution agreed well with the experimental results.
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68.55.-a Thin film structure and morphology

A comparison between calculation procedures for photoelectrical method of determination of charge distribution in metal‐oxide‐semiconductor dielectric layers

A. Balasiński, M. Duszak, and K. Iniewski

J. Appl. Phys. 65, 1152 (1989); http://dx.doi.org/10.1063/1.343054 (4 pages) | Cited 1 time

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Photoelectrical methods are widely used to determine charge distribution in the oxide layer of metal‐oxide‐semiconductor structures. Implementation of techniques proposed so far requires complicated numerical calculations. In this work, a new, simple analytical method of charge distribution extraction from experimental photoelectrical current‐voltage curves is presented. The method is based on the relationships derived from the other photoelectrical techniques and, therefore, is consistent with them. An example confirming the validity of the proposed method is also shown.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.40.+w Photoconduction and photovoltaic effects

Theoretical comparison of electron real‐space transfer in classical and quantum two‐dimensional heterostructure systems

Kevin F. Brennan and Duke H. Park

J. Appl. Phys. 65, 1156 (1989); http://dx.doi.org/10.1063/1.343055 (8 pages) | Cited 17 times

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We present a comparison of the effect of real‐space transfer on the electron drift velocities in both classical heterostructure systems, those in which spatial quantization effects do not occur, and in two‐dimensional heterostructure systems using an ensemble Monte Carlo simulation. The calculations for the two‐dimensional system are based on a first‐principles formulation of electron transport in a triangular quantum well system using an ensemble Monte Carlo code tailored to include the basic physics of two‐dimensional systems. In addition, we present an analysis, again based on a complete ensemble Monte Carlo simulation, of real‐space transfer from classical systems, ones in which no two‐dimensional gas is formed at the heterointerface. Electron drift velocities within the classical system greater than that possible in the constitutive bulk materials are thwarted by either real‐space transfer out of the high mobility material into the adjacent low mobility material or k‐space transfer within the narrow gap material itself. In contrast, higher electron drift velocities than that achievable in the bulk occur in a system in which two‐dimensional effects are present. In this case, when the electrons are confined within the two‐dimensional gas, their corresponding drift velocities are somewhat larger than within the bulk three‐dimensional system. We conclude that in electronic devices in which the electric field is applied parallel to the heterostructure layers, that the highest steady‐state electron velocities are achieved for transport within the two‐dimensional gas. In structures in which either a two‐dimensional system is not present or the carriers all reside outside of the quantized states, the steady‐state electron drift velocity is always less than or equal to the corresponding velocity in the bulk material due to the combined actions of real‐space and k‐space transfer.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Hi Surface barrier, boundary, and point contact devices
72.20.Fr Low-field transport and mobility; piezoresistance
72.20.Ht High-field and nonlinear effects

Optical absorption and structure of thermally annealed gallium selenide thin films

C. De Blasi, D. Manno, G. Micocci, and A. Tepore

J. Appl. Phys. 65, 1164 (1989); http://dx.doi.org/10.1063/1.343056 (4 pages) | Cited 12 times

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A systematic investigation of the effects of thermal annealing on the optical absorption and structure of evaporated GaSe thin films is reported. The optical gap is determined in films annealed at various temperatures and for different periods of time. The variation of the optical gap is tentatively explained as due to the annealing of the unsaturated bonds present in the amorphous solid. An electron microscopic investigation shows that a gradual amorphous‐polycrystalline transformation occurs in films treated at temperatures higher than 500 K.
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81.40.Tv Optical and dielectric properties related to treatment conditions
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.55.-a Thin film structure and morphology
68.55.Nq Composition and phase identification

Surface barrier junctions: Majority‐ and minority‐carrier currents

Fayez El Guibaly

J. Appl. Phys. 65, 1168 (1989); http://dx.doi.org/10.1063/1.343057 (8 pages) | Cited 2 times

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The continuity equations for electrons and holes in an illuminated Schottky‐barrier junction are analyzed in the presence of surface recombination. The results are derived for an n‐type semiconductor, but are equally valid for a p‐type semiconductor. The analysis is also valid for the case of semiconductor‐electrolyte solar cells by proper substitution of the currents describing charge transfer kinetics at the interface. The net current due to each type of carrier in the junction is shown to depend on the two characteristic currents: the semiconductor saturation current and the exchange current at the interface. Electrons and holes contribute to the total current through the exchange process between the metal and the conduction and valence bands, respectively. For solar cell applications, only the minority carriers generate the useful current component for energy conversion. The results of the model indicate that an efficient solar cell must have (a) little communication between the conduction band and the metal, (b) good communication between the valence band and the metal, (c) little surface recombination, (d) strong light absorption properties, (e) wide depletion region, and (f) large hole diffusion length.
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73.30.+y Surface double layers, Schottky barriers, and work functions
72.40.+w Photoconduction and photovoltaic effects
84.60.Jt Photoelectric conversion
73.25.+i Surface conductivity and carrier phenomena

Surface barrier junctions: Conversion efficiency and surface recombination

Fayez El Guibaly

J. Appl. Phys. 65, 1176 (1989); http://dx.doi.org/10.1063/1.343060 (7 pages) | Cited 1 time

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Expressions are obtained for the majority‐ and minority‐carrier currents flowing in an illuminated Schottky barrier device in the presence of surface recombination. The analysis assumes arbitrary shapes of the electron and hole quasi‐Fermi levels in the space‐charge region. The effect of bias, illumination, and surface recombination on the device are discussed. The important parameters affecting the device performance are charge transfer kinetics at the interface, the semiconductor physical parameters, and the distribution and concentration of the interface traps.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.At Surface states, band structure, electron density of states
84.60.Jt Photoelectric conversion
73.25.+i Surface conductivity and carrier phenomena

Effect of undoped GaAs spacers on the characteristics of GaAs‐(Al,Ga)As‐GaAs single barrier structures

D. E. Lacklison, G. Duggan, S. J. Battersby, J. J. Harris, C. T. Foxon, D. Hilton, C. Roberts, J. Hewett, and C. M. Hellon

J. Appl. Phys. 65, 1183 (1989); http://dx.doi.org/10.1063/1.343061 (6 pages) | Cited 3 times

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The effects of undoped spacer layers on the electrical properties of single barrier heterostructures (both alloy and superlattice) have been investigated by measuring incremental slope resistance over the bias range −400 to +400 mV and at convenient temperature intervals between 70 and 290 K. The zero bias slope resistance, Rs(0), and the effective barrier heights increase with spacer thickness. Also, the low‐temperature slope resistances, Rs(V), decrease exponentially with the magnitude of the bias, V, while the effective barrier heights, deduced from high‐temperature measurements, decrease approximately linearly. This suggests that the decrease in Rs(V) with bias is due simply to the voltage‐induced decrease in effective barrier height. Rs(0) varies exponentially with zero bias effective barrier height for both alloy and superlattice barriers and this is consistent with the Γ electrons dominating the current transport through the barriers. All of our Rs(V) curves are asymmetric and, using Airy function calculations, we have modeled curves similar to the experimental ones by assuming different doping levels for the two doped GaAs layers on either side of the barriers. This is possibly due to Si migration into the ‘‘undoped’’ barrier or the spacer layer closest to the substrate.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
66.30.J- Diffusion of impurities

Electrical properties of Si films doped with 200‐eV In+ ions during growth by molecular‐beam epitaxy

J.‐P. Noël, N. Hirashita, L. C. Markert, Y.‐W. Kim, J. E. Greene, J. Knall, W.‐X. Ni, M. A. Hasan, and J.‐E. Sundgren

J. Appl. Phys. 65, 1189 (1989); http://dx.doi.org/10.1063/1.343062 (9 pages) | Cited 28 times

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A single‐grid ultra‐high‐vacuum‐compatible ion source was used to provide accelerated In+‐dopant beams during Si(100) growth by molecular‐beam epitaxy. Indium incorporation probabilities σ, determined by secondary ion mass spectrometry, in films grown at Ts=800 °C were too low to be measured for thermal In (σIn was <3×10−5 at Ts>550 °C) . However, for accelerated In+ doping, σIn+ at 800 °C ranged from 0.03 to ∼1 for In+ acceleration energies EIn+ between 50 and 400 eV. Temperature‐dependent Hall‐effect and resistivity measurements were carried out on In+‐doped Si films grown at Ts =800 °C with EIn+=200 eV . Indium was incorporated substitutionally into electrically active sites over a concentration ranging from 2×1015−2×1018 cm−3, which extends well above reported equilibrium solid‐solubility limits. The acceptor‐level ionization energy was 156 meV, consistent with previously published results for In‐doped bulk Si. Room‐temperature hole mobilities μ were in good agreement with the best reported data for B‐doped bulk Si and were higher than previously reported values for annealed In‐implanted Si. Temperature‐dependent (77–400 K) mobilities μ(T) were well described by theoretical calculations, with no adjustable parameters, including lattice, ionized‐impurity, neutral‐impurity, and hole‐hole scattering. Lattice scattering was found to dominate, although ionized‐impurity scattering was still significant, at temperatures above ∼150 K where μ varied approximately as T−2.2 . Neutral‐impurity scattering dominated at lower temperatures. Plan‐view and cross‐sectional transmission electron microscopy observations showed no indications of dislocations or other extended defects. Considering the entire set of results, there was no evidence of residual ion‐bombardment‐induced lattice damage.
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73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.50.-h Electronic transport phenomena in thin films
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Surface modification of silicon by partially ionized beam deposited aluminum

Radhika Srinivasan, Shyam P. Murarka, and T.‐M. Lu

J. Appl. Phys. 65, 1198 (1989); http://dx.doi.org/10.1063/1.343035 (5 pages) | Cited 3 times

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We investigated the electrical characteristics of thin aluminum films, deposited using the newly developed partially ionized beam deposition technique on single‐crystal silicon substrates. The occurrence of an n‐type surface layer on an otherwise p‐type substrate was observed in samples of ultrathin films (10–50 Å). The presence of this ‘‘inversion’’ layer was found to be a strong function of deposition conditions, substrate resistivity, and thickness of the aluminum overlayers.
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73.61.At Metal and metallic alloys
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Novel trap state at the grain boundary: Metastable character of defects in p‐HgMnTe and p‐HgCdMnTe bicrystals

T. Suski, P. Wiśniewski, L. Dmowski, G. Grabecki, and T. Dietl

J. Appl. Phys. 65, 1203 (1989); http://dx.doi.org/10.1063/1.343036 (5 pages) | Cited 6 times

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The existence of the novel trap state in bicrystals of narrow‐gap semiconductors is clearly demonstrated. It is shown that this state exhibits metastable character and its origin is related to the grain boundary. A method of tuning the concentration and mobility of electrons by means of the high‐pressure freezeout of carriers on these metastable states has been applied to study two‐dimensional properties of the grain boundaries in HgMnTe and HgCdMnTe semimagnetic semiconductors.
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71.55.Gs II-VI semiconductors
61.72.Mm Grain and twin boundaries
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Fr Low-field transport and mobility; piezoresistance

Electrical properties of oxygen thermal donors in silicon films synthesized by oxygen implantation

F. Vettese, J. Sicart, J. L. Robert, S. Cristoloveanu, and M. Bruel

J. Appl. Phys. 65, 1208 (1989); http://dx.doi.org/10.1063/1.343010 (5 pages) | Cited 10 times

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Conductivity and Hall measurements have been carried out on thin silicon films formed by oxygen implantation (SIMOX) and high‐temperature annealing. These layers have then been annealed between 450 and 850 °C for 1 h in order to study the electrical behavior of oxygen thermal donors (TD). The maximum donor concentration occurs at 550 °C for TD‐I and 750 °C for TD‐II. The concentration of TD‐II is higher than that of TD‐I and the distribution of TD‐II can be nonuniform. Thermal ionization energies of these donor states are also derived. A TD level (220 meV) deeper than the typical one (150 meV) is responsible for the electrical properties of the SIMOX layers. Subsequent annealing activates shallow TD states and compensation centers. Thus the ionization energy of the deep TD level decreases greatly, when TDs are generated. High carrier mobilities have been measured which have been limited only at low temperatures by interface scattering.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Material properties of InP‐on‐Si grown by low‐pressure organometallic vapor‐phase epitaxy

D. S. Wuu, H. H. Tung, R. H. Horng, and M. K. Lee

J. Appl. Phys. 65, 1213 (1989); http://dx.doi.org/10.1063/1.343011 (4 pages) | Cited 11 times

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Undoped InP epilayers have been grown directly on (100) Si substrates by low‐pressure organometallic vapor‐phase epitaxy. The surface morphology, x‐ray diffraction peak width, and ion backscattering yield each improve substantially with InP thickness (0.1–3 μm). X‐ray and photoluminescence (PL) measurements demonstrate that the InP heteroepilayers are under biaxial tensile strain in the surface parallel direction. The carrier concentration profile shows that the carrier distribution in the InP layer is very uniform, while an apparent reduction in concentration occurs at the InP/n‐type Si interface. The 77‐K PL spectrum reveals a strong near‐band‐edge emission with a full width at half maximum of 14 meV. Post‐growth thermal annealing at 780 °C was confirmed to be effective in improving the overall quality of InP‐on‐Si. The results presented are superior to those reported previously for InP/Si heteroepitaxy.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
78.55.Cr III-V semiconductors
73.61.Ey III-V semiconductors
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