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15 Jun 1988

Volume 63, Issue 12, pp. 5633-5892

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A two‐dimensional analytical solution of the diffusion equation for silicon‐on‐insulator structures

I. Sweid, N. Guillemot, and G. Kamarinos

J. Appl. Phys. 63, 5633 (1988); http://dx.doi.org/10.1063/1.340345 (5 pages) | Cited 1 time

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The two‐dimensional (2D) redistribution of impurities in semiconductors is an important step for the research and fabrication of modern very large scale integrated (VLSI) circuits. The diffusion profiles must be known precisely if one is to master and model correctly the operations of integrated circuits. Many two‐dimensional (2D) simulators for processing bulk silicon do actually exist; however, they are not general enough to be able to simulate these processes on other structures, e.g., SOI (silicon on insulator). In this paper we present a two‐dimensional (2D) analytical solution of the diffusion equation for the case of the SIMOX (separation by implanted oxygen) structure. The model developed takes into account the limiting conditions associated with this material as well as the initial ion implantation profile. The program has been developed in this way and will be included in a complete 2D simulator for SOI process. As an example, we simulate the formation of the isolation zone in the SIMOX structure, i.e., the implantation and redistribution of boron during the formation of field oxide.
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61.72.uf Ge and Si
61.72.U- Doping and impurity implantation
02.60.-x Numerical approximation and analysis
02.70.-c Computational techniques; simulations

Secondary ion scattering in dark field ion microscopy

Dan N. Bernardo, Walter A. Ausserer, Yong‐Chien Ling, and George H. Morrison

J. Appl. Phys. 63, 5638 (1988); http://dx.doi.org/10.1063/1.340346 (9 pages)

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The formation of dark field ion images by scattered secondary ions is proposed. It is shown that this model can account for various dark field observations, and that it can be used in the determination of surface feature inclinations. Its use in the estimation of topography‐induced bright field intensity contributions is also demonstrated.
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Generalized analysis of the spherical lens as a launcher of electromagnetic missiles

Hao‐Ming Shen, Tai Tsun Wu, and Ronold W. P. King

J. Appl. Phys. 63, 5647 (1988); http://dx.doi.org/10.1063/1.340347 (7 pages) | Cited 9 times

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It is found that, like the directly transmitted radiation field previously investigated, an internally multiply reflected radiation field can also become an electromagnetic missile under certain different electromagnetic‐missile conditions. The analysis is carried out in a general way, i.e., for the point source located either inside or outside the dielectric sphere. The electromagnetic‐missile conditions are obtained for general multiply reflected radiation fields.
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03.50.De Classical electromagnetism, Maxwell equations
41.20.Jb Electromagnetic wave propagation; radiowave propagation
42.25.Bs Wave propagation, transmission and absorption
84.40.-x Radiowave and microwave (including millimeter wave) technology
84.60.-h Direct energy conversion and storage

An exact wave‐optics analysis of optical waveguide with anisotropic and gyrotropic materials

Sang‐Koo Chung and Sang‐Seol Kim

J. Appl. Phys. 63, 5654 (1988); http://dx.doi.org/10.1063/1.340348 (6 pages) | Cited 2 times

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An exact wave‐optics analysis of wave propagation in thin‐film optical waveguide with gyrotropic and anisotropic materials as waveguide film or substrate is presented for the first time. Based on the field equation and the boundary conditions of the guide, the field distribution and phase velocity of the eigenmodes of the guide are determined, and the differences in characteristics due to waveguide structure are examined in detail. The relation for TE‐TM conversion is derived in the form of the Jones matrix which allows a direct interpretation in the conversion efficiency of the guide.
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42.79.Gn Optical waveguides and couplers
03.50.De Classical electromagnetism, Maxwell equations
41.20.Jb Electromagnetic wave propagation; radiowave propagation
84.40.Az Waveguides, transmission lines, striplines

Generation of spatial subharmonics by two‐wave mixing in a nonlinear photorefractive medium

S. Mallick, B. Imbert, H. Ducollet, J. P. Herriau, and J. P. Huignard

J. Appl. Phys. 63, 5660 (1988); http://dx.doi.org/10.1063/1.340349 (4 pages) | Cited 56 times

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Self‐generation of spatial subharmonics when two coherent, almost collinear, pump beams propagate in a nonlinear photorefractive crystal of Bi12 SiO20, is reported. The intensity of the self‐generated light beam at the half‐angle between the two pumps is as high as 40% of the pump beam intensity. This phenomenon is probably a spatial analog of the temporal subharmonics obtained in a cavity containing a nonlinear medium. Application of the subharmonic of half‐spatial frequency to collinear Bragg diffraction of a near infrared beam is demonstrated.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Jq Electro-optical effects

Transverse flow cw atomic iodine laser at 1.315 μm

L. A. Schlie and R. D. Rathge

J. Appl. Phys. 63, 5664 (1988); http://dx.doi.org/10.1063/1.340299 (4 pages) | Cited 2 times

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A transverse flow cw atomic iodine laser at 1.315 μm excited by the photolytic pumping of C3F7I and demonstrating virtually an unlimited operating time is reported. The use of transverse flow establishes a much more constant integrated gain along the optical axis than that previously reported for the longitudinal flowing cw atomic iodine laser. Consequently, a cw atomic iodine laser is achieved having a greatly improved amplitude stability and easier operation in only the fundamental TEM00 transverse mode. Such an operation makes this type of cw atomic iodine lasr much more useful as a diagnostic probe laser at 1.315 μm than the previously reported longitudinal device.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
34.50.Lf Chemical reactions

Sphere‐resonance method to determine elastic constants of crystal

E. Mochizuki

J. Appl. Phys. 63, 5668 (1988); http://dx.doi.org/10.1063/1.340300 (6 pages) | Cited 11 times

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Theoretical basis is developed for the sphere‐resonance method to determine elastic constants of a very small crystal. In this method, a sphere of crystal is formed, and frequencies of its free oscillations are measured by the resonance method. To calculate frequencies of the sphere, we use the Rayleigh–Ritz (variational) method as in the rectangular parallelepiped resonance method developed by Ohno [J. Phys. Earth 24, 355 (1976)]. It is necessary in the Rayleigh–Ritz method to evaluate matrix elements which are quadratic forms in the strain tensor with coupling by the elastic tensor. To do this the elastic tensor is transformed to spherical coordinates, and the contravariant canonical components of the elastic tensor are expanded by the generalized spherical harmonics YNml with nonzero coefficients only for l=0, 2, 4. For seven crystal systems, properties of the matrix elements are examined, and free oscillations are classified. We also obtain selection rules for excitation which are useful for the mode identification.
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61.50.-f Structure of bulk crystals
45.05.+x General theory of classical mechanics of discrete systems
63.20.-e Phonons in crystal lattices
63.10.+a General theory

Multiple valued floating potentials of Langmuir probes

Cheol‐Hee Nam, N. Hershkowitz, M. H. Cho, T. Intrator, and D. Diebold

J. Appl. Phys. 63, 5674 (1988); http://dx.doi.org/10.1063/1.340301 (4 pages) | Cited 15 times

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It is shown that Langmuir probes can have three different floating potentials in plasmas produced by a hot filament discharge in a multi‐dipole device when the primary and secondary electron currents are comparable. The measured floating potential depends on the probe’s initial condition—the most negative and the least negative potentials are found to be stable and the in‐between value is found to be unstable. Results are compared to a simple theoretical model.
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52.70.Ds Electric and magnetic measurements
52.40.Hf Plasma-material interactions; boundary layer effects

Production of atomic or molecular nitrogen ion beams using a multicusp and a microwave ion source

S. R. Walther, K. N. Leung, and W. B. Kunkel

J. Appl. Phys. 63, 5678 (1988); http://dx.doi.org/10.1063/1.340302 (5 pages) | Cited 6 times

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Two small ion sources have been used to generate positive nitrogen ion beams. One is a multicusp ion source, the other is a compact microwave ion source which needs no magnetic field for operation. Both sources are operated with and without a magnetic filter to control the energetic electron population near the extraction region. Results for both ion sources, including current densities and ionic species mix are presented. The multicusp ion source can produce beams of nitrogen ions with greater than 90% of the ion species either N+ or N+2 with current densities of ∼8 and 2.5 mA/cm2, respectively. The microwave ion source can generate nitrogen ion beams composed of more than 85% N+2 with current densities of ∼30 mA/cm2.
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07.77.-n Atomic, molecular, and charged-particle sources and detectors
41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
52.50.Dg Plasma sources

Evaluation of the electron energy distribution in a low‐pressure Hg‐Ar discharge with a two‐temperature approximation

Koichi Wani

J. Appl. Phys. 63, 5683 (1988); http://dx.doi.org/10.1063/1.340303 (6 pages) | Cited 7 times

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The low‐pressure mercury‐argon discharge was analyzed employing a two‐temperature representation of the electron energy distribution. The electron energy distribution function was approximated with two Maxwellian portions, which represented a low‐energy part of the electrons (bulk) characterized by higher temperature and a high‐energy part of the electrons (tail) characterized by lower temperature. As a parameter representing non‐Maxwellian distribution, the ratio of the tail temperature to the bulk temperature was introduced. The ratio was determined experimentally by adjusting the calculated field strength of the positive column to the observed one. The plasma parameters under the two‐temperature approximation were shown to be obtainable by solving the rate equations for the particle densities and the energy balance equation for the whole electron group. The model was applied to the positive column of a 24‐mm‐diam tube. The rate coefficient of Hg 61S0 to Hg 61P1 transition was found to be 0.64 times that obtained under the Maxwell approximation.
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52.80.Hc Glow; corona
52.25.Tx Emission, absorption, and scattering of particles
34.50.Fa Electronic excitation and ionization of atoms (including beam-foil excitation and ionization)

EL2 distributions in vertical gradient freeze GaAs crystals

M. L. Gray, L. Sargent, J. S. Blakemore, J. M. Parsey, and J. E. Clemans

J. Appl. Phys. 63, 5689 (1988); http://dx.doi.org/10.1063/1.340304 (5 pages) | Cited 6 times

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Spatial distributions of EL2 in undoped, semi‐insulating GaAs crystals grown by a novel vertical gradient freeze (VGF) method are reported. As a result of the low‐temperature gradients present during growth and post‐solidification cooling, these crystals exhibit lower EL2 concentrations and lower dislocation densities than liquid‐encapsulated Czochralski crystals. Both the EL2 distribution and dislocation density over the area of a wafer do not display the fourfold symmetric pattern prevalent for LEC‐grown GaAs. The radial distributions of EL2 in as‐grown VGF crystals have been found to be independent of the dislocation density. Axial and radial Hall‐effect measurements are included. Thermal activation energies are also presented and the compensation mechanism for this material is discussed.
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61.72.J- Point defects and defect clusters
61.72.U- Doping and impurity implantation
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.10.-h Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Substrate‐affected instability in accumulation‐mode InP metal‐insulator‐semiconductor field‐effect transistor

P. Z. Lee, H. L. Chang, and L. G. Meiners

J. Appl. Phys. 63, 5694 (1988); http://dx.doi.org/10.1063/1.340305 (5 pages) | Cited 1 time

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The mechanism for drain current drift in accumulation‐type InP metal‐insulator‐semiconductor field‐effect transistor has in the past several years been attributed to oxide traps, interface states, and bulk traps. In this study we have found that deep levels in the semi‐insulating InP substrate material can in some cases dominate the current drift of the accumulation‐mode metal‐insultor‐semiconductor field‐effect transistor. Iron, which is a deep‐level acceptor, when present in large concentrations in semi‐insulating InP substrate material, appears to provide poor transistor properties and a large long‐term current drift.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices

Studies of boron on the arsenic site in electron‐irradiated GaAs

W. J. Moore and R. L. Hawkins

J. Appl. Phys. 63, 5699 (1988); http://dx.doi.org/10.1063/1.340306 (4 pages) | Cited 6 times

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The introduction of boron on the arsenic site in gallium arsenide, as monitored by the strength of its local vibrational modes (LVM) at 601.7 and 628.3 cm−1, has been observed as a function of 2 MeV electron fluence. Simultaneous monitoring of the strength of the 1S‐2P electronic transitions of the neutral shallow acceptors and of the neutral 78 meV acceptor and its singly ionized 203 meV level provides an accurate knowledge of the position of the Fermi level throughout most of the irradiation sequence. The results are inconsistent with previous models for the formation of boron on the arsenic site. We propose a model based on enhanced boron diffusion when the Fermi level lies above 78 meV. A compensation rate for electron irradiation, an introduction rate for the BAs center, and an infrared cross section for the BAs LVM are determined.
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61.72.U- Doping and impurity implantation
63.20.K- Phonon interactions
61.80.Fe Electron and positron radiation effects

Film‐edge‐induced dislocation generation in silicon substrates. III. High voltage transmission electron microscopy observations and theoretical results for (111) and (011) silicon substrates

J. Vanhellemont and C. Claeys

J. Appl. Phys. 63, 5703 (1988); http://dx.doi.org/10.1063/1.340307 (9 pages) | Cited 7 times

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The defect generation induced in the silicon substrate at nitride film edges during a local oxidation process is studied as a function of the film‐edge orientation on (111) and (011) wafers. The dislocations are characterized by high voltage transmission electron microscopy. A theoretical model which allows us to predict the defect types for arbitrarily oriented film edges and substrates is applied. Excellent agreement between experiment and theoretical calculations is obtained.
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61.72.Bb Theories and models of crystal defects
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Lk Linear defects: dislocations, disclinations

Ultrasonic second‐harmonic generation in various crystalline systems: Coupling parameters in terms of elastic moduli and propagation directions

D. Gerlich and M. A. Breazeale

J. Appl. Phys. 63, 5712 (1988); http://dx.doi.org/10.1063/1.340308 (6 pages) | Cited 2 times

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The ultrasonic second‐ and third‐order coupling parameters, K2 and K3, determined by ultrasonic second‐harmonic generation, are evaluated in terms of the second‐ and third‐order elastic moduli, for a number of crystalline systems. It is shown that K2 and K3 turn out simply to be the values of the elastic moduli C11 and C111, transformed into the direction of propagation. The possibility of evaluating the complete set of third‐order elastic moduli from measurements of second‐harmonic generation and hydrostatic pressure dependence of the sound velocity for pure mode propagation is discussed. Symmetries considered: cubic, hexagonal, rhombohedral, tetragonal, and orthorhombic.
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62.20.D- Elasticity

Modeling of shock‐induced chemical reactions in powder mixtures

Yukie Horie and Marlin E. Kipp

J. Appl. Phys. 63, 5718 (1988); http://dx.doi.org/10.1063/1.340309 (10 pages) | Cited 13 times

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Chemical reactions in inorganic powder mixtures under high‐pressure shock wave loading are described by two mathematical models, one homogeneous and the other heterogeneous. The models are formulated based upon existing results of observations on post‐shock samples of Al‐Ni, Al‐Ti, and ZnO‐Fe2O3 mixtures. Two mechanisms were isolated for the development of the initial models: (1) the creation of a nonequilibrium mixture by dynamic mass mixing, and (2) ensuing chemical reactions. The homogeneous model was evaluated under shock conditions using a one‐dimensional wave propagation code, and suggested requisite conditions for the thermal excursion of localized reactions: a localized initial peak temperature of 1000–2000 K and reaction time constants of 1 μs or less. Calculations indicate that reactions occur while the sample is under shock loading, consistent with observations of post‐shock samples.
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62.50.-p High-pressure effects in solids and liquids
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
82.30.-b Specific chemical reactions; reaction mechanisms

The effective second‐order elastic constants of a strained crystal using the elastic wave propagation in a homogeneously deformed material

R. Ramji Rao and A. Padmaja

J. Appl. Phys. 63, 5728 (1988); http://dx.doi.org/10.1063/1.340310 (5 pages) | Cited 1 time

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The equation for elastic wave propagation in a homogeneously deformed crystal has been used to obtain the expressions for the effective second‐order elastic constants of the seven crystal systems in terms of their natural second‐ and third‐order elastic constants. These expressions are employed to obtain the pressure derivatives of the effective second‐order elastic constants of some cubic crystals for which experimental data are available.
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62.20.D- Elasticity
62.20.F- Deformation and plasticity

Application of the Avrami rate equation to electromigration damage in Al–1%Si interconnections

A. J. Patrinos, V. D. Vankar, and J. A. Schwarz

J. Appl. Phys. 63, 5733 (1988); http://dx.doi.org/10.1063/1.340311 (5 pages) | Cited 1 time

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Al–1%Si test stripes were subjected to life testing, and the resistance‐versus‐time behavior of individual conductors were collected for subsequent analysis. The failure times were log‐normally distributed and the median time to failure decreased with increasing temperature. Analysis of the resistance‐versus‐time data was performed using the Avrami rate expression, R(t)=R0 exp[(Bt)n] proposed earlier by Rodbell, Rodriguez, and Ficalora [J. Appl. Phys. 61, 2844 (1987)]. It is found that values of the parameter n vary for identical conductors stressed under the same conditions. Thus the physical significance of this parameter with respect to identifying mechanisms of the rate‐determining step is questionable. On the other hand, dramatic changes in the value of this parameter are observed over the temperature range of this study; this reflects changes in the growth geometry. It is suggested that such effects can be used to establish appropriate stressing conditions during life testing to avoid possible complications in the interpretation of the reliability data.
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66.30.Qa Electromigration
72.15.-v Electronic conduction in metals and alloys
73.61.-r Electrical properties of specific thin films
82.20.-w Chemical kinetics and dynamics

Growth and characterization of Si1−xGex and Ge epilayers on (100) Si

J. M. Baribeau, T. E. Jackman, D. C. Houghton, P. Maigné, and M. W. Denhoff

J. Appl. Phys. 63, 5738 (1988); http://dx.doi.org/10.1063/1.340312 (9 pages) | Cited 59 times

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Two approaches to the growth of high‐quality epitaxial Ge epilayers on (100) Si have been investigated. The first consisted of compositional‐grading Si1−xGex layers and the use of strained‐layer superlattices as dislocation filters. In general, this method produced unsatisfactory results, due to the difficulty in achieving good epitaxial growth in the Ge concentration interval 30%−70%. The second approach consisted of simply depositing pure Ge directly on (100) Si. Excellent epitaxial films with dislocation densities of less than 107 cm−2 and smooth morphology were obtained after optimization of the growth parameters. The initial growth temperature and post‐growth annealing were found to be critical in obtaining good epitaxial material.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Formation of some hierarchy in amorphous structure during the crystallization of vacuum‐deposited amorphous semiconductor films

Kunisuke Maki and Yukichi Shigeta

J. Appl. Phys. 63, 5747 (1988); http://dx.doi.org/10.1063/1.340313 (4 pages) | Cited 7 times

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A view that some hierarchy in the structure of the amorphous phase surrounding the crystallized phase is formed, is proposed from the investigation of the kinetics in the crystallization process of amorphous semiconductor films. The view is discussed from some results in the study of solid‐phase epitaxial growth of the amorphous Si film deposited on the Si(111) surface by low‐energy electron diffraction. Some comment on the formation of the amorphous structure is also given from a viewpoint of thin‐film growth.
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68.60.Dv Thermal stability; thermal effects
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
81.15.Np Solid phase epitaxy; growth from solid phases
68.55.-a Thin film structure and morphology

Ultrahigh vacuum in situ transmission electron microscopy observations of molecular‐beam epitaxially grown InSb(111)

M. Yata, A. Toda, H. Nagatsuyu, T. Hariu, T. Nakada, K. Tsukui, and T. Osaka

J. Appl. Phys. 63, 5751 (1988); http://dx.doi.org/10.1063/1.340314 (5 pages) | Cited 8 times

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Ultrahigh vacuum in situ transmission electron microscopy has been used to investigate homoepitaxial growth processes and a 2×2 surface reconstruction of InSb(111) by molecular‐beam epitaxy. When the incident fluxes (1:1) of Sb4 and In1 are impinged onto the substrate, the respective molecules form homoepitaxially grown InSb films, leaving an excess molecule Sb∗ which does not contribute to the formation of the InSb films. As a result, there exists a critical temperature (Th) for the condensation of Sb∗ molecules. Below Th, the surface concentration of Sb∗ (nSb*) becomes higher than a critical concentration for the condensation (ncSb*), so that two phases (InSb+Sb) grow in a polycrystalline state. However, above Th as nSb* becomes lower than ncSb*, InSb films grow with the 2×2 reconstructed surfaces. This critical temperature is defined as a homoepitaxial temperature. Quantitative interpretations of Th are discussed.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Charge fields in Bi12GeO20 and dynamic flat‐band potentials

Christian M. Braun and Akira Fujishima

J. Appl. Phys. 63, 5756 (1988); http://dx.doi.org/10.1063/1.341151 (5 pages) | Cited 1 time

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A Bi12GeO20 single crystal was used to construct a photoelectrochemical memory using an aqueous junction. Two kinds of charge fields were observed, the first being of opposed polarity to the applied field in the stable condition, the second situated 0.20 and 0.33 eV above the valence band and in the stable condition with the same polarity as the applied field. The flat‐band level at no charge is −250 mV versus SCE at pH=6.9 with −50±5 mV/pH. The presence of charge fields changes the Fermi level in both directions, so that under dynamic conditions a maximum of four different flat‐band potentials can be observed. Additional information is given on charge‐field processes observed by other authors.
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77.22.Jp Dielectric breakdown and space-charge effects
07.50.Ek Circuits and circuit components
72.40.+w Photoconduction and photovoltaic effects
73.40.-c Electronic transport in interface structures

Model potential calculation of the thermal donor energy spectrum in silicon

C. S. Chen and D. K. Schroder

J. Appl. Phys. 63, 5761 (1988); http://dx.doi.org/10.1063/1.340315 (5 pages) | Cited 1 time

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The two‐parameter model potential originally proposed by Ning and Sah [Phys. Rev. B 4, 3468 (1971)] for calculating the ground‐state energies of group V and group VI impurities in silicon is extended to the variational calculation of the thermal donor ionization energies. In the multivalley effective mass approximation, the theoretical results are in excellent agreement with the reported experimental data. This provides additional evidence for the assumption that thermal donors consist of five to thirteen oxygen atoms, as first proposed by Ourmazd, Schröter, and Bourret [J. Appl. Phys. 56, 1670 (1984)].
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61.72.uf Ge and Si
61.72.Bb Theories and models of crystal defects
63.10.+a General theory

Analytical investigation of the junction space‐charge region properties of heterojunction semiconductor devices: Application to n‐AlzGa1−zAs/p‐GaAs system

S. Noor Mohammad

J. Appl. Phys. 63, 5766 (1988); http://dx.doi.org/10.1063/1.340316 (10 pages)

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An analytical investigation of the space‐charge region junction properties of heterojunction semiconductor devices from heavily doped and degenerate semiconductors has been carried out. On the basis of a new formula for Fermi–Dirac integral of order (1)/(2) theoretical formulas for junction boundary conditions, minority‐carrier concentrations at the edges of space‐charge region and excess minority‐carrier concentrations at the edges of space‐charge region have been derived. All of these formulas take the spatial dependence of band structures, carrier degeneracy, and band‐gap narrowing into account. Under special conditions the formulas reduce to the well‐known standard formulas for homojunction devices from both degenerate and nondegenerate semiconductors. The new relation for Fermi–Dirac integral is very highly accurate. Numerical calculations performed on an n‐AlzGa1−zAs/p‐GaAs (z=0.1) diode indicate that all these parameters significantly influence the junction properties of heterojunction semiconductor devices, and without which theoretical modeling of heterojunction devices with spatially dependent and heavily doped semiconductor regions are likely to involve errors.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Chemistry of Si‐SiO2 interface trap annealing

Michael L. Reed and James D. Plummer

J. Appl. Phys. 63, 5776 (1988); http://dx.doi.org/10.1063/1.340317 (18 pages) | Cited 95 times

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The kinetics and chemistry of Si‐SiO2 interface trap annealing are examined in detail. Measurements of interface trap density Dit as a function of anneal time were performed with several process variables as parameters: oxide thickness, anneal ambient, temperature, bulk carrier type, metallization damage, and orientation. Experiments were carried out using rapid thermal processing and capacitance‐voltage measurements of aluminum gate metal‐oxide‐semiconductor capacitors. Anneal temperature and crystal orientation have the strongest effect on the kinetics. 〈100〉 interfaces can be described by a power‐law temporal variation; 〈111〉 kinetics are slightly more complicated. In both cases the experimentally observed anneal behavior is in conflict with the commonly used second‐order surface recombination model. We propose a two‐reaction model involving atomic hydrogen dimerization and hydrogen/interface trap reactions. This model sucessfully predicts anneal kinetics over a temperature range of 170–500 °C, representing a 106 dynamic range in anneal rates. The difference in anneal behavior between 〈111〉 and 〈100〉 interfaces is explained by postulating different trap anneal mechanisms for the Pb0 and Pb1 defect centers. This hypothesis is supported by trap production kinetics induced by extended anneals.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
82.20.-w Chemical kinetics and dynamics
85.30.Tv Field effect devices
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