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Journal of Applied Physics / Volume 60 / Issue 12

J. Appl. Phys. 60, 4273 (1986); http://dx.doi.org/10.1063/1.337468 (4 pages)

Characterization of the effects of different capping layer structures on the laser recrystallization of silicon by using electrical test structures and Raman spectroscopy

Hsindao E. Lu1, Joseph T. Boyd1, Howard E. Jackson1, and John L. Janning2

1Solid State Electronics Laboratory, Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, Ohio 45221‐0030
2NCR Microelectronics Division, Miamisburg, Ohio 45342

(Received 23 May 1986; accepted 3 September 1986)

Polycrystalline silicon on insulator is laser‐recrystallized using three different capping layer structures on separate wafers. The capping layer structures used include a 6‐nm nitride layer, a combination of 64‐nm nitride and 20‐nm oxide layers, and 50‐nm nitride antireflection periodic stripes oriented parallel to the direction of laser scanning. Electrical characteristics are measured by metal‐oxide‐semiconductor (MOS) silicon‐on‐insulator (SOI) test structures fabricated in the laser‐recrystallized silicon films. Measurement of carrier mobilities, MOS interface properties, leakage currents, and ring oscillator delay times are compared for wafers having different capping layer structures. Stress in each case is characterized using a Raman spectrometer with microprobe.

KEYWORDS and PACS

Keywords

SILICON, RECRYSTALLIZATION, LASER−RADIATION HEATING, ELECTRICAL PROPERTIES, MOS JUNCTIONS, FABRICATION, SI JUNCTIONS, POLYCRYSTALS, RAMAN SPECTROSCOPY, INTERFACES, LEAKAGE CURRENT, CARRIER MOBILITY, LAYERS

PACS

  • 61.80.Ba

    Ultraviolet, visible, and infrared radiation effects (including laser radiation)

  • 73.61.Cw

    Elemental semiconductors

  • 73.61.Ey

    III-V semiconductors

  • 73.61.Ga

    II-VI semiconductors

  • 73.61.Jc

    Amorphous semiconductors; glasses

  • 73.61.Le

    Other inorganic semiconductors

  • 73.40.Qv

    Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

  • 81.40.Ef

    Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.337468

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

For access to fully linked references, you need to log in.
    J. B. Lasky, J. Appl. Phys. 53, 9038 (1982JAPIAU000053000012009038000001).

    J. P. Colinge, E. Demoulin, D. Bensahel, and G. Auvert, Appl. Phys. Lett. 41, 346 (1982APPLAB000041000004000346000001).

    R. W. Wu, J. T. Boyd, H. A. Timlin, H. E. Jackson, and J. L. Janning, Appl. Phys. Lett. 46, 498 (1985APPLAB000046000005000498000001).

    See, for instance, P. Zorabedian and F. Adar, Appl. Phys. Lett. 43, 177 (1983APPLAB000043000002000177000001).

    J. Gonzalez-Hernandez, G. H. Azarbayejani, and R. Tsu, Appl. Phys. Lett. 47, 1350 (1985APPLAB000047000012001350000001) and references therein.


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