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15 Apr 1986

Volume 59, Issue 8, pp. 2609-3002

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Electromagnetic scattering by periodic arrays of particles

P. C. Waterman and N. E. Pedersen

J. Appl. Phys. 59, 2609 (1986); http://dx.doi.org/10.1063/1.336988 (10 pages) | Cited 20 times

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Employing self‐consistency, the multiple‐scattering problem is formulated for periodic arrays of particles having constitutive parameters distinct from those of the embedding material. A T‐matrix description of individual particle scattering is employed, so that particles need not be spherical. Explicit analytical and numerical results are obtained for the effective complex dielectric constant ϵ and permeability μ in the quasistatic and infinitesimal lattice limits for several lattice geometries, and shown to agree with existing static computations under appropriate conditions. Random arrays are also considered briefly, and the role of single‐particle resonance effects is examined. Finally, longitudinal electric and magnetic waves are predicted to exist at certain discrete frequencies where ϵ or μ vanish.
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41.60.-m Radiation by moving charges
11.80.-m Relativistic scattering theory
77.90.+k Other topics in dielectrics, piezoelectrics, and ferroelectrics and their properties (restricted to new topics in section 77)
75.90.+w Other topics in magnetic properties and materials (restricted to new topics in section 75)

Picosecond study of near‐band‐gap nonlinearities in GaInAsP

M. N. Islam, E. P. Ippen, E. G. Burkhardt, and T. J. Bridges

J. Appl. Phys. 59, 2619 (1986); http://dx.doi.org/10.1063/1.336989 (10 pages) | Cited 12 times

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From picosecond pump‐probe and forward degenerate four‐wave mixing (DFWM) experiments, we obtain the near‐band‐gap nonlinear absorption and refraction properties of GaInAsP for λ∼1.5 μm. Using a mode‐locked color center laser, the nonlinear signals are studied in room‐temperature samples as a function of time and wavelength for different pump energies and for materials with different band‐gap energies. Nonlinear absorption cross sections σeh as large as −5.7×10−15 cm2 are obtained from the pump‐probe results, while effective nonlinear cross sections σeff as large as 7.8×10−16 cm2 (corresponding to a steady state ‖χ(3)‖∼3.8×10−3 esu for a 20‐ns relaxation time) are measured in the DFWM experiments. The spectral behavior of the data shows that above the band gap, the nonlinearity is due both to band filling and screening of excitonic effects. However, the effectiveness of the screening diminishes within one or two plasma frequencies of the band edge.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Direct observation of structural phase changes in proton‐exchanged LiNbO3 waveguides using transmission electron microscopy

W. E. Lee, N. A. Sanford, and A. H. Heuer

J. Appl. Phys. 59, 2629 (1986); http://dx.doi.org/10.1063/1.336965 (5 pages) | Cited 18 times

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Transmission electron microscopy of proton‐exchanged LiNbO3 waveguide channels reveals regions of diffuse intensity within the single‐crystal electron diffraction patterns of LiNbO3. The diffuse intensity was not observed from areas of LiNbO3 which had been masked with Cr before exchange. Heating the waveguides in air at 550 °C for 2 h sharpened some of the diffuse intensity into diffraction spots, some of whose lattice spacings matched Nb2O5 or LiNb3O8. Other reflections also appeared which matched these phases. Small (∼20 nm diam) cavities were also observed in the exchanged channels after heating and suggest the occurrence of a dehydration reaction.
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68.55.-a Thin film structure and morphology
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
42.79.Gn Optical waveguides and couplers

Electron orbits in combined rotating quadrupole and dipole magnetic fields

B. Levush, T. M. Antonsen, and W. M. Manheimer

J. Appl. Phys. 59, 2634 (1986); http://dx.doi.org/10.1063/1.336966 (4 pages) | Cited 1 time

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The single‐particle trajectories of relativistic electrons in a magnetic field configuration which consist of a periodic wiggler field produced by a helical winding of two wires (‘‘dipole’’ magnetic field) superimposed on a helical winding of four wires (continuously rotating ‘‘quadrupole’’ magnetic field) are studied. The orbit equations can be reduced to a system of linear, inhomogeneous differential equations for variables related to transverse velocities. These equations are solved exactly and the stability region for the electron orbits in wide range of the parameters is obtained.
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41.60.-m Radiation by moving charges
41.60.Cr Free-electron lasers
52.59.Px Hard X-ray sources
41.75.Ht Relativistic electron and positron beams

Distribution of charge carriers generated in a semiconductor by a focused convergent light beam

T. Wilson and E. M. McCabe

J. Appl. Phys. 59, 2638 (1986); http://dx.doi.org/10.1063/1.336967 (5 pages) | Cited 9 times

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We calculate the three‐dimensional light distribution in the focal region of a lens in the presence of absorption. The results are directly applicable to the optical generation of carriers in a semiconductor. A generation volume for these carriers is introduced and its dependence on focus position is investigated.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.20.Bh Theory, models, and numerical simulation
42.25.Lc Birefringence

Structural characterization of proton exchanged LiNbO3 optical waveguides

C. Canali, A. Carnera, G. Della Mea, P. Mazzoldi, S. M. Al Shukri, A. C. G. Nutt, and R. M. De La Rue

J. Appl. Phys. 59, 2643 (1986); http://dx.doi.org/10.1063/1.336968 (7 pages) | Cited 53 times

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This paper reports the results of structural analysis of proton‐exchanged lithium niobate optical waveguides fabricated in Z‐, X‐, and Y‐cut substrates immersed in pure benzoic acid. Rutherford backscattering spectrometry, nuclear reactions, secondary ion mass spectrometry, scanning electron microscopy, and x‐ray diffraction were used to measure atomic composition profiles and the marked lattice distortion induced by the proton exchange process in the waveguiding layer. H and Li concentration measurements indicate an exchange of about 70% of the Li atoms are present in the virgin LiNbO3 crystal.
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42.79.Gn Optical waveguides and couplers
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
75.20.Ck Nonmetals
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Propagation of light in an optically active electro‐optic crystal of Bi12SiO20: Measurement of the electro‐optic coefficient

M. Henry, S. Mallick, D. Rouède, L. E. Celaya, and A. Garcia Weidner

J. Appl. Phys. 59, 2650 (1986); http://dx.doi.org/10.1063/1.336969 (5 pages) | Cited 15 times

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We have studied the phenomenon of light propagation in an optically active linearly birefringent medium with particular reference to the electro‐optic crystal of Bi12SiO20. Analytic expressions are given for the ellipticity and the orientation of the emerging light vibration when linearly polarized light is incident normally on the crystal. From these expressions we derive the interesting results that there exists an orientation of the incident light vector for which the output beam is linearly polarized and that the input and output linear vibrations are then symmetrically oriented with respect to the principal birefringent axes of the crystal. This particular angle of orientation is expressed in terms of the linear and circular birefringence of the crystal. Since ellipticity is a function of the electric‐field‐induced linear birefringence and hence of the electro‐optic coefficient of the crystal, we have determined the electro‐optic coefficient r41 from a measured value of the ellipticity. The coefficient r41 is found to be (4.1±0.1)×10−12 m/V.
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42.25.Lc Birefringence
42.70.Gi Light-sensitive materials
78.20.Jq Electro-optical effects
78.20.Fm Birefringence

Electronic conduction in polyethylene naphthalate at high electric fields

Kenzo Kojima, Yoshiaki Takai, and Masayuki Ieda

J. Appl. Phys. 59, 2655 (1986); http://dx.doi.org/10.1063/1.336970 (5 pages) | Cited 14 times

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The electric conduction in polyethylene naphthalate film was investigated under high electric fields. The current strongly depended on the electrode materials, especially on the cathode metal. Schottky‐injection current was observed in the specimen with an Al cathode at the fields less than 106 V/cm, while at higher fields (>106 V/cm) tunneling‐injection current and electroluminescence were observed simultaneously, suggesting the impact ionization by electrons injected from the electrode.
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72.20.Ht High-field and nonlinear effects
72.80.-r Conductivity of specific materials
79.70.+q Field emission, ionization, evaporation, and desorption
78.60.Fi Electroluminescence

Reflection of surface acoustic waves on anisotropic media

P. Schiavone and M. Planat

J. Appl. Phys. 59, 2660 (1986); http://dx.doi.org/10.1063/1.336971 (6 pages) | Cited 3 times

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Reflection of Rayleigh surface waves by shallow grooves or metallic strips on general anisotropic crystals is analyzed. In this paper, the groove or strip is considered as a small discontinuity which acts as a surface excitation source for the scattering of the incident wave. The problem is solved by using Fourier transform technique and integration in the complex plane. Reflection coefficients of the various geometries on quartz and lithium niobate are calculated in good agreement with experiment.
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43.35.Pt Surface waves in solids and liquids
43.38.Rh Surface acoustic wave transducers
43.20.Mv Waveguides, wave propagation in tubes and ducts
43.20.Fn Scattering of acoustic waves

cw composite acoustic resonator and some applications in nondestructive testing of materials

D. V. Ivanov and J. I. Burov

J. Appl. Phys. 59, 2666 (1986); http://dx.doi.org/10.1063/1.336972 (7 pages)

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A composite acoustic resonator consisting of a buffer and a sample is considered in the present paper. A numerical analysis was accomplished for finding out the resonance conditions. Although complicated expressions were obtained, the composite resonator can be used for nondestructive testing of materials in a relatively simple manner. It is shown that if the acoustic and elasto‐optic parameters of the buffer are known, one can find out those of the sample using the diffraction of a laser beam from the acoustic field in the buffer. Good agreement was obtained between the theoretical and the experimental results in the case of a fused quartz‐dense flint system. It is shown that attenuation coefficient elasto‐optic constants and velocity of propagation can be measured with satisfactory accuracy with the help of the composite acoustic resonator.
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43.58.Kr Spectrum and frequency analyzers and filters; acoustical and electrical oscillographs; photoacoustic spectrometers; acoustical delay lines and resonators
43.35.Zc Use of ultrasonics in nondestructive testing, industrial processes, and industrial products
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography

Diffusive gas transport through capillaries: A solution to the intermediate case based upon the kinetic theory of gases

Arthur Z. Moss

J. Appl. Phys. 59, 2673 (1986); http://dx.doi.org/10.1063/1.336973 (4 pages) | Cited 1 time

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Diffusion of gases through porous media is often treated in the continuum approximation of fluid dynamics. However, when the pore diameter is of the same order of magnitude as the mean free path of the molecules in the gas, the continuum approximation is no longer valid because of incorrect collision counting. This paper presents the first theoretical solution of this problem by strict use of the kinetic theory of gases. The diffusion coefficient as calculated herein exhibits a coupling term not present in the continuous fluid treatment.
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47.56.+r Flows through porous media
51.10.+y Kinetic and transport theory of gases
47.45.Dt Free molecular flows
05.60.-k Transport processes

Large‐scale‐length nonuniformities in gas puff implosions

T. W. Hussey, M. K. Matzen, and N. F. Roderick

J. Appl. Phys. 59, 2677 (1986); http://dx.doi.org/10.1063/1.336974 (8 pages) | Cited 20 times

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Because they are less susceptible to the hydromagnetic Rayleigh–Taylor instability than other fast Z‐pinch imploding liner systems, gas puffs offer the possibility of higher implosion velocity. This higher specific energy appears necessary for optimizing high‐energy x rays required in a photoionization‐pumped soft x‐ray laser. Nevertheless, large‐scale‐length nonuniformities created as the gas flows from the nozzle across the electrode gap are a potential problem. One‐ and two‐dimensional calculations suggest that gas near the nozzle will implode before that which is further from the nozzle, leading to an effect described as ‘‘zippering.’’ Because the number of such two‐dimensional calculations that can be done is limited and because the density distribution of nozzles is uncertain, we have developed a simple quasi‐two‐dimensional interface code that is able to quickly survey the effect of arbitrary initial gas distributions on the implosion dynamics. Results of this survey suggest that zippering contributes significantly to thermalization time, and we propose two methods to counteract this problem. These techniques, each of which involves tailoring the initial density distribution to offset effects of nonuniformities, appear promising. Nevertheless, we will never completely eliminate these nonuniformities, therefore, they must be accounted for in x‐ray laser target design.
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52.55.Ez Theta pinch
42.55.-f Lasers
47.60.Kz Flows and jets through nozzles
52.30.-q Plasma dynamics and flow

Magnetic insulation of extraction Applied‐B ion diodes

Stephen A. Slutz and David B. Seidel

J. Appl. Phys. 59, 2685 (1986); http://dx.doi.org/10.1063/1.336975 (4 pages) | Cited 9 times

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The difference in the operation of extraction geometry versus radial geometry Applied‐B ion diodes is explained through the use of a general magnetic insulation condition for cylindrically symmetric ion diodes which is expressed in terms of the magnetic stream function. We find that Applied‐B extraction geometries attempted so far have suffered from a magnetic field configuration defect which explains their rather poor performance. We present solutions to the extraction Applied‐B ion diode problem, as well as 2D, electromagnetic particle‐in‐cell simulations of an example solution.
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41.60.-m Radiation by moving charges
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
52.75.Fk Magnetohydrodynamic generators and thermionic convertors; plasma diodes

Dopant redistribution during titanium silicide formation

Jun Amano, P. Merchant, T. R. Cass, J. N. Miller, and Tim Koch

J. Appl. Phys. 59, 2689 (1986); http://dx.doi.org/10.1063/1.336976 (5 pages) | Cited 21 times

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For advanced metal‐oxide‐semiconductor structures it is highly desirable to have a self‐aligned silicide structure on source and drain regions as well as on the gate in order to simplify lithography while reducing parasitic resistances. The reproducible formation of metal silicides on highly doped n+ and p+ regions with shallow junctions is required for those structures. Therefore, it is essential to understand the dopant behavior, silicide phase formation, and grain growth during high‐temperature annealing. Titanium silicides were formed on arsenic and boron difluoride implanted and annealed Si substrates. Arsenic atoms showed a significant redistribution and loss during titanium silicide formation. Arsenic atoms diffused out of the silicide surface with an activation energy of 0.95 eV. Boron atoms segregated to the silicide surface, and some boron atoms were lost from the surface; on the other hand, fluorine atoms were retained in the silicide layer. After prolonged 900 °C annealing, the thin titanium disilicide layers were converted into discontinuous structures.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
68.55.-a Thin film structure and morphology
66.30.J- Diffusion of impurities

Characterization of shallow (Rp <20 nm) As‐ and B‐implanted and electron‐beam annealed silicon

G. B. McMillan, J. M. Shannon, J. B. Clegg, and H. Ahmed

J. Appl. Phys. 59, 2694 (1986); http://dx.doi.org/10.1063/1.336977 (10 pages) | Cited 2 times

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The annealing characteristics of shallow (Rp <20 nm) arsenic‐ and boron‐implanted layers were found to be a complex function of the thermal cycle which the sample experienced. Arsenic at 10 keV and boron at 4.5 keV (derived from 20 keV BF+2 ) were implanted in the dose range 1014–1016 cm−2 into (100) Si. The optimal implant doses to maximize conductivity with essentially undiffused layers of device quality material were 2 × 1015 and 1015 cm−2 for As and B, respectively. A comparison of rapid isothermal annealing using the multiple‐scan electron‐beam annealing method and conventional furnace annealing was made. For arsenic minimum resistivities of about 2 × 10−4 Ω cm were obtained after furnace annealing at 550 °C for 15 min or electron‐beam annealing with a peak temperature between about 700 and 1100 °C during a 100 ms (or 1 s) anneal. For boron, electron‐beam annealing for 100 ms (or 1 s) with a peak temperature of between ∼700 and 1000 °C produced a resistivity of 7 × 10−4 Ω cm which compared with 1.2 × 10−3 Ω cm following conventional furnace annealing. High‐resolution SIMS showed that peak temperatures of up to about 1000 and 1100 °C for B and As layers, respectively, may be reached with essentially no diffusion. An extension of diffusion theory applicable to conventional furnace annealing of deeper implant gave results in accord with SIMS profiles.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Acoustic emissions from penny‐shaped cracks in glass. I. Radiation pattern and crack orientation

Kwang Yul Kim and Wolfgang Sachse

J. Appl. Phys. 59, 2704 (1986); http://dx.doi.org/10.1063/1.336978 (7 pages) | Cited 5 times

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In the first part of this paper we describe measurements of the radiation pattern of the acoustic emission (AE) signals emitted when a penny‐shaped crack of Mode I type is generated in a glass plate by pressing a rigid conical indenter onto the surface. It is shown that the orientation of a crack determined from the radiation pattern of the emitted AE signals is in agreement to within several degrees with a direct optical determination.
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62.20.M- Structural failure of materials
62.65.+k Acoustical properties of solids
43.40.Le Techniques for nondestructive evaluation and monitoring, acoustic emission

Acoustic emissions from penny‐shaped cracks in glass. II. Moment tensor and source‐time function

Kwang Yul Kim and Wolfgang Sachse

J. Appl. Phys. 59, 2711 (1986); http://dx.doi.org/10.1063/1.336979 (5 pages) | Cited 6 times

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In the second part of this paper we describe both epicentral and off‐epicentral responses corresponding to the acoustic emission (AE) source of a Mode I type penny‐shaped crack generated by the indentation technique. The characteristics of the source are described in terms of the components of the moment tensor and its time function which were recovered from the waveforms coupled with an analysis of the AE radiation pattern described in Part I of this paper [J. Appl. Phys. 59, 2704 (1986)]. The recovered source characteristics indicate that the dominant contribution to the AE source of the penny‐shaped crack comes from a single dipole acting normal to the crack plane whose temporal characteristics resemble those of a terminated parabolic ramp function.
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62.20.M- Structural failure of materials
62.65.+k Acoustical properties of solids
43.40.Le Techniques for nondestructive evaluation and monitoring, acoustic emission

Elastic precursor decay calculation

Y. Partom

J. Appl. Phys. 59, 2716 (1986); http://dx.doi.org/10.1063/1.336980 (12 pages) | Cited 2 times

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We propose a characteristics scheme to compute the flow field behind the elastic precursor in plane impact. An important feature of the scheme is that the precursor path is one of the lines of the integration net. This enhances the accuracy and flexibility of the scheme. We use the scheme to conduct an extensive parametric investigation of the precursor decay flow field. We show that correct shapes of flow field profiles are reproduced only if a finite rate of dislocation generation is assumed. We demonstrate several effects that contribute to the resolution of the precursor decay anomaly.
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62.50.-p High-pressure effects in solids and liquids
81.40.Lm Deformation, plasticity, and creep
61.72.Lk Linear defects: dislocations, disclinations
62.20.F- Deformation and plasticity

Low‐temperature phase diagram of the Ga‐As‐Sb system and liquid‐phase‐epitaxial growth of lattice‐matched GaAsSb on (100) InAs substrates

H. Mani, A. Joullie, F. Karouta, and C. Schiller

J. Appl. Phys. 59, 2728 (1986); http://dx.doi.org/10.1063/1.336981 (7 pages) | Cited 9 times

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The liquidus and solidus in the Ga‐rich corner of the Ga‐As‐Sb system were determined by experiments using liquids of constant antimony concentration xLSb =0.0615. Evidence was obtained for a quite asymmetric solid‐phase miscibility gap. A theoretical phase diagram has been calculated on the basis of simple solution model. This diagram predicts the equilibrium conditions for the liquid‐phase epitaxy of lattice‐matched ternary layers on InAs substrates in the growth temperature domain 500–600 °C, but it gives a symmetric solid‐phase miscibility gap that is inconsistent with our experimental data. The actual conditions for exact lattice matching were experimentally determined by measurements on liquid‐phase‐epitaxial layers grown by the supercooling method on (100)‐oriented InAs. Flat and uniform mirrorlike epilayers were obtained using slight initial supercoolings (3–10 °C) within the range of relative lattice mismatch from −0.05% to +0.1%, which corresponds to positive mismatch (alayer>asubstrate) at the growth temperature (∼550 °C). The growth kinetics of the lattice‐matched ternary alloy, which has the composition GaAs0.09Sb0.91, appear to be governed by solute diffusion in the liquid. If it is assumed that As and Sb have the same diffusion coefficient, a value of 6.8×10−5 cm2 s−1 for this coefficient is obtained by fitting the experimental data.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.30.Dz Phase diagrams of other materials

Interfacial conditions for thermomechanical equilibrium in two‐phase crystals

William C. Johnson and J. Iwan D. Alexander

J. Appl. Phys. 59, 2735 (1986); http://dx.doi.org/10.1063/1.336982 (12 pages) | Cited 42 times

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A virtual variational approach is used to deduce the interfacial conditions for thermomechanical equilibrium in two‐phase crystals separated by a curved interface. The interface is modeled as a Gibbsian dividing surface and the excess quantities which include the deformation gradients, entropy, and number density of components are accounted for explicitly. Conditions necessary for equilibrium are obtained for both a coherent and incoherent interface that incorporate the effects of surface stress. An example illustrating the use of these new interfacial conditions in establishing boundary conditions is given.
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64.70.K- Solid-solid transitions
65.40.De Thermal expansion; thermomechanical effects
68.35.Rh Phase transitions and critical phenomena
64.60.F- Equilibrium properties near critical points, critical exponents

Trapping of deuterium in krypton‐implanted nickel

R. C. Frank, S. P. McManus, L. E. Rehn, and P. Baldo

J. Appl. Phys. 59, 2747 (1986); http://dx.doi.org/10.1063/1.336983 (5 pages) | Cited 8 times

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Krypton ions with energy 600 keV were implanted in nickel to fluences of 2 × 1016 cm−2 under three different conditions. Deuterium was subsequently introduced into the implanted regions by electrolysis at room temperature. After the diffusible deuterium was permitted to escape, the 2H(3He,1H)4He nuclear reaction was used to analyze for the trapped deuterium during an isochronal annealing program. The region implanted at 100 °C with no higher temperature anneal had the largest number of traps; the region implanted at 100 °C and annealed for 100 min at 500 °C had considerably less; the region implanted at 500 °C had the least. Electron diffraction patterns confirmed the existence of solid crystalline krypton in all three regions. Transmission electron microscope studies revealed precipitates with an average diameter of 8 nm in the region implanted at 500 °C. The two regions implanted at 100 °C contained smaller precipitates. Trap binding enthalpies were obtained by math modeling. In addition to the traps with binding enthalpy of 0.55 eV reported earlier by other investigators for helium implanted in nickel, a smaller number of traps with binding enthalpies up to 0.83 eV were also found. The trapping of deuterium by various types of imperfections, including the solid krypton precipitates, is discussed.
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66.30.J- Diffusion of impurities
61.80.Jh Ion radiation effects
61.72.up Other materials
81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging

Transport number measurements during plasma anodization of Si, GaAs, and ZrSi2

J. Perrière, J. Siejka, N. Rémili, A. Laurent, A. Straboni, and B. Vuillermoz

J. Appl. Phys. 59, 2752 (1986); http://dx.doi.org/10.1063/1.336984 (8 pages) | Cited 25 times

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In contrast to the thermal oxidation of Si where molecular oxygen is the sole moving species, the plasma anodization involves the movements of anions (oxygen or its compounds) or cations (Si or its compounds) or both. A similar situation is observed during the plasma anodization of refractory metal silicides (ZrSi2) or even GaAs. To get some insights on the mechanisms of plasma anodization, the transport number of cations t+ in oxides grown by anodization in oxygen plasma has been investigated using Xe atom markers. Rutherford backscattering techniques were used to determine the change in Xe marker position related to the change in oxide thickness. Results showed that t+≂0 for SiO2 growth indicating oxide formation solely by oxygen ion movement while for GaAs oxide, the t+ value obtained (t+≠0) evidences cation and oxygen anion migration during the growth. For ZrSi2 anodization, the position of the Xe markers remains unchanged during oxide formation yielding t+≂0, while the analysis of the backscattering spectra shows a Zr oxide enrichment in the near surface region of the oxide mixture. This suggests a relative movement of Zr cations with respect to Si cations. The implications of these findings on the microscopic transport mechanisms of ions under high electric field are presented.
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81.65.-b Surface treatments
66.30.Lw Diffusion of other defects
72.20.Ht High-field and nonlinear effects
66.30.J- Diffusion of impurities

Thermal evolution of molybdenum disilicide grown on (100) silicon under ultrahigh vacuum conditions

A. Perio and J. Torres

J. Appl. Phys. 59, 2760 (1986); http://dx.doi.org/10.1063/1.337048 (5 pages) | Cited 8 times

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Under ultrahigh vacuum conditions, molybdenum disilicide has been obtained by electron gun evaporation of molybdenum on heated monocrystalline silicon substrate. Depending on the deposition temperature, the resulting thin film is composed of tetragonal disilicide or of a mixture of hexagonal and tetragonal disilicide. Preferential orientations of MoSi2 have been observed for both phases grown on (100) silicon substrate heated at 550, 650, and 750 °C. Further annealing does not improve the crystallographic orientation of the materials.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.Nq Composition and phase identification

Hydrogenation during thermal nitridation of silicon dioxide

A. E. T. Kuiper, M. F. C. Willemsen, A. M. L. Theunissen, W. M. van de Wijgert, F. H. P. M. Habraken, R. H. G. Tijhaar, W. F. van der Weg, and James T. Chen

J. Appl. Phys. 59, 2765 (1986); http://dx.doi.org/10.1063/1.336985 (8 pages) | Cited 10 times

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The incorporation of nitrogen and hydrogen during nitridation of SiO2 was studied over the temperature range of 800–1000 °C and for ammonia pressures of 1, 5, and 10 atm. The nitrogen content of the nitrided films was determined with Rutherford‐backscattering spectrometry and elastic‐recoil detection. Nitrogen in‐depth profiles were obtained applying Auger analysis combined with ion sputtering. Hydrogen profiles in the films were measured using nuclear‐reaction analysis. Both the nitrogen and hydrogen incorporation were found to increase with temperature in this range. A higher ammonia pressure primarily increases nitridation of the bulk of the oxide films. Depending on the nitridation conditions, up to 10 at.% of hydrogen may be incorporated. As distinct from the nitrogen profiles, the hydrogen in‐depth profiles are essentially flat. The concentration of hydrogen in the films, however, was always found to be smaller than that of nitrogen: measured H/N ratios varied between 0.25 and 0.85, the smaller values being obtained for the thinner oxides and higher nitridation temperatures. The model previously postulated to explain the nitrogen incorporation during atmospheric nitridation of SiO2 proves to be valid at higher pressures as well. By considering the role of OH as a reaction product of the nitridation process, the hydrogen results can be accommodated within the same concept. The model predicts a low H/N‐incorporation ratio for a thin surface and interface layer and a substantially larger ratio for the bulk of the film. If this prediction is correct, which seems to be indicated by the etch‐rate behavior of the nitrided oxides, then this would have considerable importance for the electrical properties of this material.
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81.05.Kf Glasses (including metallic glasses)
81.65.-b Surface treatments
77.55.-g Dielectric thin films
68.55.Nq Composition and phase identification
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Cross‐sectional transmission electron microscopy investigation of Ti/Si reaction on phosphorus‐doped polycrystalline silicon gate

C. Y. Wong, F. S. Lai, P. A. McFarland, F. M. d’Heurle, and C. Y. Ting

J. Appl. Phys. 59, 2773 (1986); http://dx.doi.org/10.1063/1.336986 (4 pages) | Cited 10 times

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Titanium interaction with phosphorus‐doped polycrystalline silicon gate electrodes was investigated by cross‐sectional transmission electron microscopy and correlated with sheet resistance measurements. Phosphorus concentration above 1×1016 ion/cm2 in the polycrystalline silicon leads to decreased TiSi2 formation, discontinuous metal silicide layer, and increased sheet resistance. A possible cause could be the formation of titanium phosphide at high phosphorus concentration in the polycrystalline silicon, competing with the total titanium available for silicide formation.
Show PACS
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.40.Ns Metal-nonmetal contacts
73.61.At Metal and metallic alloys
68.35.B- Structure of clean surfaces (and surface reconstruction)
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