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15 Jun 1986

Volume 59, Issue 12, pp. 3945-4191

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Exact solution of three‐dimensional transport problems using one‐dimensional models

K. Misiakos and F. A. Lindholm

J. Appl. Phys. 59, 4091 (1986); http://dx.doi.org/10.1063/1.336717 (6 pages) | Cited 1 time

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Several parameters of certain three‐dimensional semiconductor devices including diodes, transistors, and solar cells can be determined without solving the actual boundary‐value problem. The recombination current, transit time, and open‐circuit voltage of planar diodes are emphasized here. The resulting analytical expressions enable determination of the surface recombination velocity of shallow planar diodes. The method involves introducing corresponding one‐dimensional models having the same values of these parameters.
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85.30.De Semiconductor-device characterization, design, and modeling
72.20.Fr Low-field transport and mobility; piezoresistance
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Dp General theory, scattering mechanisms

Surface effects and grain‐boundary domination in thin‐film Zn3P2 photoconductivity

S. Hava

J. Appl. Phys. 59, 4097 (1986); http://dx.doi.org/10.1063/1.336718 (6 pages) | Cited 5 times

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Photoconductivity spectral response, linearity, and response time measurement indicate that surface effects and intergrain boundaries can play important roles in the characteristics of thin‐film Zn3P2. Response time of the order of a few seconds and the dependence of the spectral response on vacuum operation indicate the existence of long‐lived states at the surface. Photoconductivity response was found to be a maximum at a wavelength of 400 nm. Vacuum operation and heat treatment were observed to improve responsivity, shift the peak responsivity wavelength towards longer wavelengths, and increase the spectral width of maximum responsivity. The photoconductivity spectral dependence and the response times were found to be light–intensity dependent. It is proposed that effects of the barrier heights at the surface and at the intergrain junctions are light‐illumination dependent. The properties of the surface and the grain boundary depend on chemisorption or chemical reactions due to adsorbed gases or impurities.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
85.60.Gz Photodetectors (including infrared and CCD detectors)
84.60.Jt Photoelectric conversion
75.20.Ck Nonmetals

Barrier height enhancement of triangular barrier diodes

R. S. Gupta, G. S. Chilana, and G. P. Srivastava

J. Appl. Phys. 59, 4103 (1986); http://dx.doi.org/10.1063/1.336719 (5 pages) | Cited 4 times

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A modified model of a triangular barrier diode has been proposed and analyzed by considering the effect of low to moderate p‐type doping in the two intrinsic regions. The presence of such acceptor impurities is shown to increase the effective barrier height. The functional dependence of barrier height, saturation current, and ideality factor on various technological parameters is discussed. A method to determine the barrier height and effective Richardson constant has also been suggested. The high‐speed switching behavior of this diode is shown to improve.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
85.30.Hi Surface barrier, boundary, and point contact devices

Appearance of the superconducting phase transition of solders in magnetoresistance measurements

A. W. Buij, H. M. A. Schleijpen, and F. A. P. Blom

J. Appl. Phys. 59, 4108 (1986); http://dx.doi.org/10.1063/1.336668 (5 pages) | Cited 1 time

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We have examined the influence of the superconducting phase transition in the solder materials Rose‐metal (Bi‐52.5%, Pb‐32%, Sn‐15.5%), CdIn alloy (Cd‐50%, In‐50%), and indium on magnetoresistance measurements of (Cd1−xMnx)3As2 . The superconducting phase transition of these solders takes place within the temperature and magnetic field ranges where quantum oscillations of magnetoresistance usually are observed. The appearance of the generated anomalous signals may lead to misinterpretation, in terms of anomalous oscillations of the magnetoresistance or quantization of the surface impedance. We have found a correlation between the magnitude of the anomalous signals and the resistivity ratio of solder and sample material.
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72.20.My Galvanomagnetic and other magnetotransport effects
74.25.-q Properties of superconductors
72.60.+g Mixed conductivity and conductivity transitions
74.10.+v Occurrence, potential candidates

Magnetic properties, microstructure, and domain structure of SmCo3.25Cu1.75

R. K. Mitchell and R. A. McCurrie

J. Appl. Phys. 59, 4113 (1986); http://dx.doi.org/10.1063/1.336669 (10 pages) | Cited 6 times

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A study of the magnetic properties, microstructure, and domain structure of a cast and annealed alloy of SmCo3.25Cu1.75 has been made with the object of relating the magnetic properties, and in particular the mechanism of magnetization reversal, to the microstructure by using the techniques of magnetometry, the Kerr magneto‐optic effect, scanning electron microscopy, and electron probe microanalysis. It has been concluded that in the cast alloy, the coercivity is principally determined by domain‐wall nucleation with subsequent weak pinning at the grain boundaries. In the annealed alloy, the coercivity is principally determined by domain‐wall pinning by the two‐phase microstructure within the grains.
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75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.60.Ch Domain walls and domain structure
75.60.Lr Magnetic aftereffects
81.40.Rs Electrical and magnetic properties related to treatment conditions

Observation of subdivided 180° Bloch wall configurations on iron whiskers

U. Hartmann and H. H. Mende

J. Appl. Phys. 59, 4123 (1986); http://dx.doi.org/10.1063/1.336670 (6 pages) | Cited 32 times

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Subdivided 180° Bloch walls have been observed on iron whiskers using an improved colloid technique. Under the influence of a magnetic field applied vertical to the surface of a specimen the magnetization reversal of the complex wall is governed by Néel line motion. The field‐induced conversion exhibits a characteristic ‘‘remanence’’ and ‘‘coercivity’’ of the wall. During a longitudinal magnetization cycle of a whisker the actual wall configuration has a substantial influence on the magnetization curve. The coercivity of the specimen is closely correlated to the initial mobility of the Néel lines. Discontinuities in the Néel line motion are responsible for small Barkhausen jumps, especially in the low‐field region. The irregular segmentation of the complex wall in the remanent state appears to be an essential source of the remanent whisker magnetization.
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75.60.Ch Domain walls and domain structure
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.50.Bb Fe and its alloys

Magnetic viscosity and thermal activation energy

P. Gaunt

J. Appl. Phys. 59, 4129 (1986); http://dx.doi.org/10.1063/1.336671 (4 pages) | Cited 136 times

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Magnetic viscosity arises when the activation energy E required to produce a change in mangetization is provided thermally. Activation energy functions for single domain particles and materials with ‘‘strong’’ and ‘‘weak’’ domain‐wall pinning are discussed. The magnetic viscosity parameter Sv, given by kT(∂E/∂H)−1T, where kT is the Boltzmann energy and H is the magnetic field, is shown to be proportional to kT/(v Ms), where Ms is the spontaneous magnetization and v is the activation volume swept out as the energy barrier is overcome. For single domain particles and strong domain‐wall pinning the constant of proportionality is one while for weak pinning it is 1/2. The generality of this simple relationship is shown to be independent of the details of the activation model.
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75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.60.Lr Magnetic aftereffects
75.60.Ch Domain walls and domain structure
75.30.Cr Saturation moments and magnetic susceptibilities

Optical constants and associated functions of metastable diamondlike amorphous carbon films in the energy range 0.5–7.3 eV

N. Savvides

J. Appl. Phys. 59, 4133 (1986); http://dx.doi.org/10.1063/1.336672 (13 pages) | Cited 158 times

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The complex refractive index N(ω)=n+ik and the complex dielectric constant ϵ(ω)=ϵ1+iϵ2 are presented for diamondlike amorphous carbon (a‐C) films in the photon energy range 0.5–7.3 eV. The effective number of valence electrons neff per carbon atom, the static dielectric constant ϵ0,eff, and the energy loss function Im[−1/ϵ(ω)] are deduced via the use of sum rules and are used to interpret the optical data. The a‐C films were deposited using an unbalanced magnetron gun to sputter a graphite target (effective sputtering area of 20 cm2) in ultrapure argon gas. The magnetron is characterized by a high deposition flux of condensing atoms (1.5×1014–1.2×1016 cm−2 s−1) and a concomitant high ion flux (6×1014–2.5×1016 cm−2 s−1). A series of films were prepared by sputtering at different power levels in the range 5–500 W. Insulating substrates were used which allowed the films to self‐bias negatively with respect to the plasma, so that the films were bombarded during their growth by Ar+ ions of energy 16–13 eV at an Ar+/C arrival rate ratio varying from about 4 to 2. A transition in the optical properties, physical properties (density, conductivity, microhardness), and microstructure is observed with the most rapid changes occurring at low sputtering power. The optical data are discussed in terms of interband transitions appropriate to amorphous semiconductors, and by comparison with the optical constants and the band structure of crystalline graphite and diamond. We find that films possess a metastable bonding configuration of a mixture of sp3 (tetrahedral) and sp2 (trigonal) bonds with the average coordination of the carbon atoms varying from 3.76 to 3.44. This fourfold‐to‐threefold transition in bonding is attributed to ion‐induced structural modification of the amorphous carbon matrix. Weak plasma peaks at about 5 eV and the trends in neff and ϵ0,eff indicate that the π electron is localized leading to a hopping conductivity and a large optical gap, E0=0.40–0.74 eV.
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75.20.Ck Nonmetals
68.55.-a Thin film structure and morphology
77.22.Ch Permittivity (dielectric function)
61.80.Jh Ion radiation effects

Radiation from and force acting on a point charge moving through a cylindrical hole in a conducting medium

D. De Zutter and D. De Vleeschauwer

J. Appl. Phys. 59, 4146 (1986); http://dx.doi.org/10.1063/1.336673 (5 pages) | Cited 9 times

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The radiation from and the force acting on a point charge, moving with relativistic velocity through a cylindrical hole in a conducting medium, is determined. It is shown that a Cerenkov effect occurs if the conductivity of the medium is sufficiently small. Explicit results are given for the time dependence of the field demonstrating the existence of a Cerenkov cone. The dragging force on the moving particle due to radiation losses is examined in detail. The proposed method also applies to dispersive media.
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03.50.De Classical electromagnetism, Maxwell equations
41.90.+e Other topics in electromagnetism; electron and ion optics (restricted to new topics in section 41)
03.30.+p Special relativity

Reactive ion beam etching with chlorinated gases: Beam characterization and etching of aluminum

Ch. Steinbrüchel

J. Appl. Phys. 59, 4151 (1986); http://dx.doi.org/10.1063/1.336674 (7 pages)

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Particle beams generated in a Kaufman‐type ion gun from CC12F2, CCl4, and BCl3 have been characterized with a mass spectrometer. The composition of ionic and neutral species emanating from the gun varies strongly with the gun operating conditions. For all three gases major components are Cl+2 and Cl+ among the ions, and Cl2 among the neutrals. Various other ions and neutral fragments of the form CClx Fy, CClx, and BClx are also observed. Changes in the gas composition versus the magnetic field in the gun and versus gas pressure are related to corresponding measurements of the etch yield of aluminum. These results, together with data on the etch yield versus ion energy and incident angle, suggest that the overall etching includes contributions from physical sputtering, direct reactive ion etching, and, especially with CCl4 and to some extent with BCl3, from chemical sputtering. The implications of the beam diagnostics for other experiments, etching such materials as III‐V compounds, silicon, and silicides are also discussed.
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81.05.Bx Metals, semimetals, and alloys
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
07.77.-n Atomic, molecular, and charged-particle sources and detectors
52.75.-d Plasma devices

Conversion electron Mössbauer spectroscopy and x‐ray photoemission spectroscopy studies of thermal oxidation of Fe67Co18B14Si1 metallic glass

Y. V. Bhandarkar, S. M. Kanetkar, S. B. Ogale, S. V. Ghaisas, V. G. Bhide, and P. D. Prabhawalkar

J. Appl. Phys. 59, 4158 (1986); http://dx.doi.org/10.1063/1.336675 (9 pages) | Cited 1 time

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The oxidation kinetics and associated structural and chemical transformations in the Fe67Co18B14Si1 metallic glass have been investigated by using the techniques of conversion electron Mössbauer spectroscopy (CEMS) and x‐ray photoemission spectroscopy (XPS). The as‐quenched as well as vacuum‐annealed samples of the metallic glass have been subjected to thermal treatment in air at 100, 300, and 390 °C for 1/2 h in each case. The information regarding the structural transformations and chemical reactions has been obtained by deconvoluting the complex CEMS spectra and analyzing the contributions of various elements to the XPS spectra. It is shown that oxygen incorporation in the glass initiates the process of recrystallization of the glassy state at a temperature which is lower as compared to its temperature of recrystallization in vacuum. The oxygen‐coordinated phases in the oxide scale and the other phases precipitated due to the reactive thermal treatment have been identified and the physical mechanisms underlying the observed effects have been commented upon. Experiments have also been performed to examine the transformations occurring in the metallic glass upon its prolonged thermal treatment in air at a typical temperature (∼100 °C) within the recommended temperature range (25–125 °C) for its use in applications. It has been demonstrated that the surface layers of the as‐received glass are affected by such a treatment, though the sample preannealed at 300 °C remains relatively unaffected. The observations made on the basis of CEMS and XPS studies have been supported by x‐ray diffraction and resistance‐annealing measurements.
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81.05.Kf Glasses (including metallic glasses)
81.65.-b Surface treatments
76.80.+y Mössbauer effect; other γ-ray spectroscopy
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
79.60.-i Photoemission and photoelectron spectra

Effect of low‐energy hydrogen ion implantation on dendritic web silicon solar cells

A. Rohatgi, D. L. Meier, P. Rai‐Choudhury, S. J. Fonash, and R. Singh

J. Appl. Phys. 59, 4167 (1986); http://dx.doi.org/10.1063/1.336676 (5 pages) | Cited 7 times

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The effect of a low‐energy (0.4 keV), short‐time (2 min), heavy‐dose (1018/cm2) hydrogen ion implant on dendritic web silicon solar cells and material was investigated. Such an implant was observed to improve the cell open‐circuit voltage and short‐circuit current appreciably for a number of cells. In spite of the low implant energy, measurements of internal quantum efficiency indicate that it is the base of the cell, rather than the emitter, which benefits from the hydrogen implant. This is supported by the observation that the measured minority‐carrier diffusion length in the base did not change when the emitter was removed. In some cases, a threefold increase of the base diffusion length was observed after implantation. The effects of the hydrogen implantation were not changed by a thermal stress test at 250 °C for 111 h in nitrogen. It is speculated that hydrogen enters the bulk by traveling along dislocations, as proposed recently for edge‐defined film‐fed growth silicon ribbon.
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84.60.Jt Photoelectric conversion
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.72.uf Ge and Si
81.40.Rs Electrical and magnetic properties related to treatment conditions

Current drift associated with surface recombination current in InGaAsP/InP optical devices

Mitsuo Fukuda

J. Appl. Phys. 59, 4172 (1986); http://dx.doi.org/10.1063/1.336677 (5 pages) | Cited 7 times

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The current drift associated with surface recombination current is confirmed in InGaAsP/InP double heterostructure diodes and a model of the current drift is proposed. Moreover, the electrical behavior of the surface in InGaAsP/InP double heterostructure devices under low voltage bias is discussed through the model.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Gk Tunneling

Enhanced diffusion of antimony within a heavily phosphorus‐doped layer

Kenji Nishi, Kouichi Sakamoto, and Jun Ueda

J. Appl. Phys. 59, 4177 (1986); http://dx.doi.org/10.1063/1.336678 (3 pages) | Cited 9 times

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Antimony diffusion within a heavily phosphorus‐doped silicon layer has been studied. Enhanced diffusion of antimony has been found within a heavily phosphorus‐doped layer, which contrasts with the retarded diffusion below such layers reported elsewhere. Antimony diffusivity increases in proportion to a certain power of electron concentration when carriers are given by phosphorus, and resembles the behavior of phosphorus diffusivity. These results indicate that the increase of charged vacancies due to Fermi‐level effect within heavily phosphorus‐doped layers coexists with vacancy undersaturation below the layer.
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66.30.J- Diffusion of impurities
61.72.jd Vacancies
61.72.jj Interstitials
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Minority‐carrier properties of thin epitaxial silicon films fabricated by limited reaction processing

J. C. Sturm, C. M. Gronet, and J. F. Gibbons

J. Appl. Phys. 59, 4180 (1986); http://dx.doi.org/10.1063/1.336679 (3 pages) | Cited 17 times

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Generation lifetimes and diode properties have been measured in epitaxial silicon films grown by limited reaction processing. Generation lifetimes from 1.4 to 94  μs were measured by observing the recovery of MOS capacitors from deep depletion. Planar diodes fabricated in both n‐ and p‐type epitaxial films show excellent behavior in both forward and reverse bias. p‐n junctions formed by growing p‐type epitaxial silicon directly on an n‐type substrate show no evidence of excessive interface defects or traps.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Kk Junction diodes

Common occurrence of distortion in semiconductor luminescence spectra

C. A. Warwick

J. Appl. Phys. 59, 4182 (1986); http://dx.doi.org/10.1063/1.336680 (3 pages) | Cited 10 times

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The distortion of semiconductor luminescence spectra by selective absorption of totally internally reflected rays in the specimen is investigated by varying the effective field of view of the collection optics and by local excitation from a focused electron beam. For example, in undoped InP, the results show that an artifactual enhancement of the acceptor related luminescence by a factor of ∼50 occurs if the field of view commonly used in luminescence experiments (∼1 mm) is employed. In addition, a shoulder on a spectral peak close to the absorption edge, which could be interpreted as being due to a separate recombination mechanism, is shown to be merely an artifact arising from this distortion. This communication shows for the first time that the effect can be both detected and eliminated by a novel field‐of‐view masking technique.
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78.60.Hk Cathodoluminescence, ionoluminescence
78.40.Fy Semiconductors
78.30.-j Infrared and Raman spectra
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Temporal behavior of NO laser emission from the photodissociation of ClNO and BrNO

J. I. del Barrio, J. R. Rebato, and F. M. G. Tablas

J. Appl. Phys. 59, 4184 (1986); http://dx.doi.org/10.1063/1.336681 (3 pages) | Cited 1 time

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We have studied the temporal behavior of the NO laser emission produced from the photodissociation of ClNO and BrNO. No J shifting has been observed except in the 7→6 band of 2Π3/2 from ClNO. In both cases laser starts from an intermediate lasing vibrational level, triggering higher and lower transitions that end with the lowest observed band.
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42.55.Ks Chemical lasers
42.55.-f Lasers
33.20.Ea Infrared spectra
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Diffusion of boron in Mo silicide films

Juri Kato, Akira Fujisawa, Michio Asahina, Hidetsugu Shimura, and Yasuhiro Yamamoto

J. Appl. Phys. 59, 4186 (1986); http://dx.doi.org/10.1063/1.337037 (4 pages) | Cited 1 time

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The diffusion of boron in MoSi2 films has been studied. The diffusion is determined by a combination of two factors: the low diffusivity in the bulk of grains and the much higher diffusivity in the grain boundaries. The diffusivity in the bulk of grains was 1×10−14 cm2/s and 8×10−13 cm2/s for furnace annealing at 950 °C and halogen lamp annealing at 1060 °C, respectively. The diffusivity in the grain boundaries was over two orders of magnitude higher than that in the bulk of grains. High‐temperature annealing of MoSi2 films reduce the solubility and diffusivity of boron in the films because of grain growth.
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66.30.J- Diffusion of impurities
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.72.up Other materials
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Influence of magnetic history on flux jump fields

J. Sosnowski

J. Appl. Phys. 59, 4189 (1986); http://dx.doi.org/10.1063/1.336682 (3 pages)

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A formalism describing the fields at which flux jumps occur in hard superconductors has been confirmed by the description of an experimentally observed shift of flux jump fields in the second hysteresis loop of a Nb3Al superconducting sample. By fitting the theoretical model to experimental data, values of the proportionality parameter between the stability limit and the flux jump field, the first stability limit, and the first penetration field have been estimated.
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74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
74.25.Sv Critical currents
74.25.-q Properties of superconductors
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