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1 Oct 1985

Volume 58, Issue 7, pp. 2431-2798

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Dependence of thin‐film microstructure on deposition rate by means of a computer simulation

Karl‐Heinz Müller

J. Appl. Phys. 58, 2573 (1985); http://dx.doi.org/10.1063/1.335885 (4 pages) | Cited 97 times

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A computer simulation is employed to demonstrate, in a two‐dimensional growth model, that a vapor‐deposited thin film of low adatom mobility undergoes a sudden change from a porous columnar microstructure to a densely packed film if the substrate temperature is increased to a certain value. The temperature where this structural transition occurs is shown to be related to the lower boundary temperature of the empirical structure‐zone model. The dependence of the transition temperature and range on the vapor deposition rate is discussed.
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68.55.-a Thin film structure and morphology
68.35.Ja Surface and interface dynamics and vibrations

Heteroepitaxial growth of Ge films on the Si(100)‐2×1 surface

M. Asai, H. Ueba, and C. Tatsuyama

J. Appl. Phys. 58, 2577 (1985); http://dx.doi.org/10.1063/1.335886 (7 pages) | Cited 84 times

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The initial stage of Ge heteroepitaxy on a Si(100)‐2×1 surface has been investigated by low‐energy electron diffraction (LEED) and Auger‐electron spectroscopy (AES). The growth mode of the Ge films was studied by measuring the decrease in the Si(LVV) AES line at 92 eV with an increase in the Ge overlayer thickness. The Ge films deposited at room temperature exhibit layer‐by‐layer growth up to at least six monolayers. When the substrate is heated up to 350 °C, the growth mode is characterized by the Stranski–Krastanov type; i.e., the first three monolayers of growth is followed by island formation. Although these characteristics of the growth mechanism are similar to the case of Ge on Si(111)‐7×7 surfaces, annealing behavior of the Ge films suggests that the bond strength between Ge and Si is stronger on Si(100) than on Si(111) surfaces. In contrast to the case of Ge on Si(111) surfaces, where the original 7×7 superstructure of the Si surface is replaced by a new 5×5 pattern at about two‐monolayer coverage of Ge, the original 2×1 LEED pattern is not strongly disturbed up to about 1–2 monolayers of Ge. In addition to the detailed study on the initial stage of heteroepitaxial growth, we observed that thick Ge films deposited onto Si(100) surfaces held at 350 and 470 °C display a sharp 2×1 LEED pattern and demonstrate a single‐crystal growth of a Ge(100) face on the Si(100) surface. This is further supported by a measurement of the x‐ray diffraction pattern of the Ge films.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Silicon‐on‐insulator structures formed by a line‐source electron beam: Experiment and theory

J. A. Knapp

J. Appl. Phys. 58, 2584 (1985); http://dx.doi.org/10.1063/1.335887 (9 pages) | Cited 22 times

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A line‐source electron beam has been used to melt and recrystallize isolated Si layers to form Si‐on‐insulator structures. Heat flow calculations for these layered structures have been developed which correctly predict the observed recrystallization. Using sample sweep speeds of 100–600 cm/s and peak power densities up to 75 kW/cm2 in the 1×20‐mm beam, we have obtained single‐crystal areas as large as 50×350 μm. Seed openings to the substrate are used to control the orientation of the regrowth and the heat flow in the recrystallization film.
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61.80.Fe Electron and positron radiation effects
68.55.-a Thin film structure and morphology
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.10.Fq Growth from melts; zone melting and refining

Thermoelastic attenuation of Rayleigh waves

G. K. Jurczyk and P. G. Klemens

J. Appl. Phys. 58, 2593 (1985); http://dx.doi.org/10.1063/1.335888 (6 pages) | Cited 1 time

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Thermoelastic attenuation of Rayleigh waves is larger than that of bulk waves because heat is conducted not only in the propagation direction, but also normal to the surface. This attenuation is further enhanced if the thermal expansivity is a function of depth below the surface. Expressions are obtained for the attenuation and some experimental data on Rayleigh wave attenuation is discussed.
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68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
62.30.+d Mechanical and elastic waves; vibrations
65.40.De Thermal expansion; thermomechanical effects
62.80.+f Ultrasonic relaxation

Au acceptor levels in Si under pressure

Ming‐fu Li, Jian‐xin Chen, Yu‐shu Yao, and Guang Bai

J. Appl. Phys. 58, 2599 (1985); http://dx.doi.org/10.1063/1.335889 (4 pages) | Cited 8 times

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The hydrostatic pressure coefficient of Au acceptor levels ET in Si was measured by transient capacitance method. Under the pressure range of 0–8 kbar, the pressure coefficient ∂(Ec−ET)/∂P=−1.9 meV/kbar. The electron capture cross section of Au acceptor centers is independent of pressure within experimental accuracy. For defect levels with defect potential of Td symmetry, the uniaxial stress coefficient ∂(mathc−mathT)/∂F is isotropic and equal to one‐third of corresponding hydrostatic pressure coefficient. By comparing the present result of hydrostatic pressure coefficient with the uniaxial stress coefficient reported by X. C. Yau, G. G. Qin, S. R. Zeng, and M. H. Yuan [Acta Phys. Sin. 33, 377 (1984)], one concludes that the defect potential is far from Td symmetry. Therefore, the Au acceptor levels are unlikely to have been originated by simple gold substitutional or interstitial configuration in Si.
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78.40.Fy Semiconductors
61.72.S- Impurities in crystals

Relation between distribution of states and the space‐charge‐region capacitance in semiconductors

I. Balberg

J. Appl. Phys. 58, 2603 (1985); http://dx.doi.org/10.1063/1.335890 (14 pages) | Cited 18 times

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In contrast with recent suggestions we show that frequency dependent capacitance‐voltage (C‐V) characteristics can yield information on the state distribution in the forbidden gap of semiconductors which have a continuous state distribution there. For this purpose we have applied an analysis which is based on the solution of the Poisson equation in various sections of the space‐charge region. Then, by using a new recursion approach we found new general expressions for the frequency and temperature dependence of the C‐V characteristics. The present work yields analytic results and a transparent physical picture so that clear correlation is obtained between features of the above characteristics and features of the state distribution. In particular, it is shown that under deep depletion the well‐known linear 1/C2 vs V relation is maintained regardless of the state distribution. This enables the use of the frequency, or temperature, dependence of the corresponding slope for the evaluation of the state distribution from experimental data.
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71.20.-b Electron density of states and band structure of crystalline solids
71.23.-k Electronic structure of disordered solids
73.30.+y Surface double layers, Schottky barriers, and work functions

Determination of distribution of states in hydrogenated amorphous silicon from capacitance‐voltage characteristics

I. Balberg and E. Gal

J. Appl. Phys. 58, 2617 (1985); http://dx.doi.org/10.1063/1.335891 (11 pages) | Cited 16 times

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In this paper we present an experimental method for the derivation of the state distribution in the pseudogap of an amorphous material. The method is based on capacitance‐voltage (C‐V) measurements and on transient capacitance interpretation. Analysis of the frequency and temperature dependence of the C‐V characteristics, obtained under deep depletion conditions, enables a differential determination of the density of states in part of the forbidden gap. This approach is shown to have advantages over other capacitance‐based methods in particular for routine comparative studies. In the present work we have measured phosphorus‐doped a‐Si:H (hydrogenated amorphous silicon) materials which have been prepared under similar conditions in three different laboratories. The results indicate that the discrepancy found in the density‐of‐states maps derived in different laboratories are due more to the different data interpretations than to real variations between the materials. The map derived here is found to be in general agreement with results obtained by other transient capacitance methods. In particular, the presence of a wide peak in the density of states, the center of which is around midgap. The peak increases with increasing dopant concentration but the rise in the Fermi level and the doping efficiency appear to be associated with the fine details of the density‐of‐states dip which lies between the above peak and the sharply rising conduction band tail.
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71.23.-k Electronic structure of disordered solids
71.20.-b Electron density of states and band structure of crystalline solids

Capacitance transient analysis of configurationally bistable defects in semiconductors

M. Levinson

J. Appl. Phys. 58, 2628 (1985); http://dx.doi.org/10.1063/1.335892 (6 pages) | Cited 21 times

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Configurationally bistable defects can exist in either of two different structural configurations for the same charge state. Each configuration exhibits distinct optical and electronic properties. Here a framework is presented for the use and interpretation of deep level capacitance transient spectroscopy measurements in the study of these defects. Examples are presented for the MFe center in InP, a bistable A‐center‐related defect in Si, and the EL2 center in GaAs.
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78.40.Fy Semiconductors
61.72.jd Vacancies
61.72.jj Interstitials
61.72.Yx Interaction between different crystal defects; gettering effect

Approximation for the Fermi–Dirac integral with applications to the modeling of charge transport in heavily doped semiconductors

M. Abdus Sobhan and S. NoorMohammad

J. Appl. Phys. 58, 2634 (1985); http://dx.doi.org/10.1063/1.335893 (4 pages) | Cited 5 times

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Analytical formulas for evaluating Fermi–Dirac integral of order (1)/(2) has been proposed. The formulas exhibit a degeneracy factor C which controls essentially the applicability of the integrals both to the nondegenerate as well as highly degenerate semiconductors. The accuracies with which the derivative can be evaluated by differentiation and integration of the proposed formulas are acceptable. The formulas have been successfully used in the calculation of effective carrier concentration and current density.
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02.30.Rz Integral equations
02.60.Nm Integral and integrodifferential equations
72.20.Dp General theory, scattering mechanisms
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Heat‐resisting and efficient indium oxide/indium phosphide heterojunction solar cells

K. Ito and T. Nakazawa

J. Appl. Phys. 58, 2638 (1985); http://dx.doi.org/10.1063/1.335894 (2 pages) | Cited 6 times

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Indium oxide/indium phosphide heterojunction solar cells have been fabricated in which the transparent conductive n‐type indium oxide films were deposited in two steps by reactive evaporation of indium on the p‐type InP single‐crystal substrates. The cells were heat resisting up to 500 °C in air and had a solar power conversion efficiency of 16.3% without antireflection coatings.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
81.15.Jj Ion and electron beam-assisted deposition; ion plating
81.40.Rs Electrical and magnetic properties related to treatment conditions

Determination of alloy scattering potential in Ga1−xAlxAs alloys

A. K. Saxena and A. R. Adams

J. Appl. Phys. 58, 2640 (1985); http://dx.doi.org/10.1063/1.335895 (6 pages) | Cited 17 times

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Room‐temperature Hall mobility as a function of pressure (0–8 kbar) has been measured for high‐purity liquid‐phase‐epitaxy‐grown Ga1−xAlxAs layers. GaAs‐like band structure of low‐composition alloys has also been converted to Si‐like band structure at high pressures and the Hall mobility measured as a function of temperature (77≲T≲300 °K) with crystals locked under constant pressures. The data have been analyzed to identify and distinguish the presence of space charge and alloy scatterings both characterized by mobilities limited by T−1/2. The space charge scattering has been found to be absent in all the crystals studied except x=0.047. The alloy scattering potential for electrons in the Γ minimum has been shown to depend on the alloy composition with a maximum value of 1.56 eV at x=0.19. For electrons in the X minima, this potential has been found to be independent of composition with a value of only 0.4 eV.
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72.20.Fr Low-field transport and mobility; piezoresistance
72.20.Dp General theory, scattering mechanisms
72.80.Ey III-V and II-VI semiconductors

Potential fluctuations of well‐defined magnitude superimposed to a Gaussian distribution: Effect of annealing in semi‐insulating GaAs

S. Abdalla and B. Pistoulet

J. Appl. Phys. 58, 2646 (1985); http://dx.doi.org/10.1063/1.335896 (5 pages) | Cited 7 times

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Complex conductivity measurements of unannealed and annealed semi‐insulating GaAs crystals are reported. A model of fluctuations of well‐defined magnitude superimposed to a Gaussian distribution accounts for the σac ∝ ω2 dependence observed above 106 Hz in some unannealed samples. The effect of annealing on the magnitude of long‐range potential fluctuations and on the average carrier density is analyzed.
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72.80.Ey III-V and II-VI semiconductors
81.40.Rs Electrical and magnetic properties related to treatment conditions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Effect of space angle on constriction resistance and contact resistance for a point contact

Y. Sano

J. Appl. Phys. 58, 2651 (1985); http://dx.doi.org/10.1063/1.335897 (4 pages) | Cited 1 time

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It can generally be considered that an actual contact makes an angle with the extension of the contact surface because the tip of a contact element is convex in shape (macroscopically) and has surface roughness (microscopically). The effect of this angle on constriction resistance and contact resistance for a point contact is analyzed theoretically by solving Laplace’s equation subject to boundary conditions determined by a modeled morphology of the contact. The analysis leads to the modified formulas for the constriction resistance and the contact resistance, which show that the effect cannot always be neglected and that the contact model with space angle is useful.
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73.40.Cg Contact resistance, contact potential
84.32.Dd Connectors, relays, and switches

A simple qualitative model of surface versus bulk effects in gamma‐ray irradiated p‐n diodes

I. Hirsh, S. Hava, N. S. Kopeika, Z. B. Alfassi, and A. P. Kushelevsky

J. Appl. Phys. 58, 2655 (1985); http://dx.doi.org/10.1063/1.335898 (4 pages)

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Various Si and Ge rectifier diodes are tested at frequent intervals of γ‐radiation doses for changes in ideality factor η and minority carrier lifetime τ. Although both parameters are well known to decrease with dosage, here they are probably for the first time measured to also subsequently increase, decrease, increase, etc., at higher dosages. Examination of diodes in vacuum prior to and following even modest irradiation levels indicates experimentally that noticeable changes in surface properties have been induced by the irradiation. Such experimental techniques permit greater insight into the basic structure of surface phenomena long suspected to play a significant role in diode changes brought about by nuclear irradiation. Utilization of such surface changes leads to a broad general concept to explain the reversals and changes in the dosage dependences of η and τ in terms of bulk versus surface effects.
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61.80.Ed γ-ray effects
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.25.+i Surface conductivity and carrier phenomena
85.30.De Semiconductor-device characterization, design, and modeling

In/Pt ohmic contacts to GaAs

Dean C. Marvin, Neil A. Ives, and Martin S. Leung

J. Appl. Phys. 58, 2659 (1985); http://dx.doi.org/10.1063/1.335899 (3 pages) | Cited 15 times

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Graded heterojunction InGaAs ohmic contacts to GaAs have been prepared which show improved electrical and mechanical properties. The improvements result from the use of a thin Pt layer between the In layer and the substrate which controls the reaction of the In and the GaAs. Evidence is also offered that the InAs heterojunction regions are epitaxial.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
73.40.Vz Semiconductor-metal-semiconductor structures

A mathematical study of general analytical models for step p‐n semiconductor junctions

Ying‐Chao Ruan, B. V. Paranjape, and Jing‐Qing Tang

J. Appl. Phys. 58, 2662 (1985); http://dx.doi.org/10.1063/1.335900 (10 pages) | Cited 1 time

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Three generalized models covering a wide range of ionized impurity densities, NA and ND, have been put forward for undegenerate semiconductor step p‐n junctions at equilibrium. They contain the exact electric field and the potential at the interface of a junction, and give a satisfactory field distribution and potential distribution. In limiting cases they reduce to the traditional depletion model given by Shockley and the one‐side junction model by van de Wiele and Demoulin. The proposed models can be applied to low‐injection junctions. The electric field and the potential as functions of position given in this paper can also be used in other step junctions.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Sx Metal-semiconductor-metal structures

Influence of a magnetic field on the emission probability of hot electrons from silicon into silicon dioxide

M. Garrigues, A. Pavlin, and Y. Hellouin

J. Appl. Phys. 58, 2672 (1985); http://dx.doi.org/10.1063/1.335901 (5 pages) | Cited 1 time

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The influence of a strong magnetic field (up to 12 T), parallel to the Si‐SiO2 interface on the injection of hot electrons from Si into SiO2, has been measured in the case where the heating electric field is uniform and normal to the interface. The experimental results show that the influence of the magnetic field can be either an increase or a decrease of the injection probability depending on the type of test device used. These results are compared to a numerical simulation based on the hypothesis that injected electrons are in majority ballistic (‘‘lucky’’) electrons. It is shown that a possible interpretation of the experimental results can be found with this model by taking into account the influence of interface roughness on the escape conditions of hot electrons. Numerical results based on a simple model are given that show for the first time that interface roughness may be an important factor to consider in the study of hot‐electron injection physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Domain wall pinning at planar defects

Amikam Aharoni

J. Appl. Phys. 58, 2677 (1985); http://dx.doi.org/10.1063/1.335902 (4 pages) | Cited 9 times

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A Ritz model of a one‐dimensional wall is used to study this wall passing the barrier created by planar imperfections, in an infinite slab of a hard ferromagnetic material, with a finite thickness.
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75.60.Ch Domain walls and domain structure
75.50.Vv High coercivity materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Magnetic study of carbon chars in the transition range

M. P. Sarachik, F. Michelman, W. Li, F. W. Smith, and J. P. Remeika

J. Appl. Phys. 58, 2681 (1985); http://dx.doi.org/10.1063/1.335903 (5 pages) | Cited 1 time

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Using static techniques, we have measured the susceptibility and magnetization of carbon chars heat treated at temperatures between 1000 and 1500 °C, the so‐called ‘‘transition range,’’ where equivalent information is unavailable by electron spin resonance measurements due to severe line broadening effects. A small increase is observed in the Curie contribution to the susceptibility as a function of heat‐treatment temperature, indicating the appearance of unpaired spins possibly associated with structural changes which occur in the transition range. The diamagnetism of these chars increases rapidly with increasing heat‐treatment temperature, and a strong temperature dependence appears which is consistent with behavior expected for a two‐dimensional gas of charged carriers. The latter can be ascribed to the formation and growth of microcrystalline graphitic regions.
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75.30.Cr Saturation moments and magnetic susceptibilities
81.40.Rs Electrical and magnetic properties related to treatment conditions

Magnetically sensitive InSb films prepared on SiO layers using hot‐wire recrystallization

Masaaki Isai and Masahide Ohshita

J. Appl. Phys. 58, 2686 (1985); http://dx.doi.org/10.1063/1.335904 (5 pages) | Cited 7 times

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Magnetically sensitive InSb films have been prepared by hot‐wire recrystallization. A room‐temperature magnetoresistance (MR) value of ΔR/R0=155%/1 T was obtained at 1 T with length to width ratio (L/W)=0.4. Samples were prepared by sequential deposition of In, InSb, and SiO onto unheated mica substrates. They were placed mica side toward the nichrome wire heater. The crystal properties of these films were investigated with a transmission electron microscope (TEM). The TEM investigations showed that single‐crystal InSb films were grown from the SiO layer. This preparation technique is useful because effective MR elements with large area (20×30 mm) can be prepared without a complicated process and huge cost.
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75.70.-i Magnetic properties of thin films, surfaces, and interfaces
75.80.+q Magnetomechanical effects, magnetostriction
68.55.-a Thin film structure and morphology
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Optical properties of (AlAs)n(GaAs)n superlattices grown by metalorganic chemical vapor deposition

A. Ishibashi, Y. Mori, M. Itabashi, and N. Watanabe

J. Appl. Phys. 58, 2691 (1985); http://dx.doi.org/10.1063/1.335905 (5 pages) | Cited 88 times

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Optical properties were investigated on the superlattices with a unit lattice period of (AlAs)n(GaAs)n (n=1–24) which were grown by atmospheric‐pressure metalorganic chemical vapor deposition. Raman spectroscopy indicated that superlattice structure is realized for each n without collapsing into alloys. Photoluminescence measurement indicated that the ultrathin‐layer superlattice (with n larger than 2) has a direct energy gap, which is in good agreement with a tight‐binding calculation.
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75.20.Ck Nonmetals
78.40.Fy Semiconductors
78.30.Hv Other nonmetallic inorganics
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Optical properties of semiconducting iron disilicide thin films

M. C. Bost and J. E. Mahan

J. Appl. Phys. 58, 2696 (1985); http://dx.doi.org/10.1063/1.335906 (8 pages) | Cited 272 times

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Iron disilicide thin films were prepared by furnace reaction of ion beam sputtered iron layers with single‐crystal silicon wafers and with low‐pressure chemical vapor deposition (LPCVD) polycrystalline silicon thin films. X‐ray diffraction indicates the films are single‐phase, orthorhombic, β‐FeSi2. Impurity levels are below the detection limit of Auger spectroscopy. Normal incidence spectral transmittance and reflectance data indicate a minimum, direct energy gap of 0.87 eV. The apparent thermal activation energy of the resistivity in the intrinsic regime is about half of this minimum optical gap. With such a direct band gap, the material may be suitable for the development of both light‐sensitive and light‐emitting thin‐film devices within the silicon microelectronics technology.
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75.20.Ck Nonmetals
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.55.-a Thin film structure and morphology

Dangling bonds and the Urbach tail in silicon

C. H. Seager, P. M. Lenahan, K. L. Brower, and R. E. Mikawa

J. Appl. Phys. 58, 2704 (1985); http://dx.doi.org/10.1063/1.335907 (5 pages) | Cited 9 times

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Electron spin resonance (ESR) and highly sensitive optical‐absorption measurements have been performed on plastically deformed silicon, polycrystalline silicon, and high interface state density, oxidized silicon samples. In the first two cases, the response of the Urbach‐like subgap optical absorption and the ‘‘dangling bond’’ ESR signal following thermal and atomic hydrogen anneals is found to be distinctly different from that reported previously for polycrystalline silicon. These data suggest that transitions of the dangling bond are not responsible for this Urbach‐like behavior. In addition, we find that removal of the interfacial silicon dangling bond by oxide stripping results in no measurable sample absorptance decreases, implying a considerably lower optical cross section than has been previously estimated for dangling bonds in the bulk.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Optical absorption and dangling bonds in damaged silicon

C. H. Seager and P. M. Lenahan

J. Appl. Phys. 58, 2709 (1985); http://dx.doi.org/10.1063/1.335908 (4 pages) | Cited 5 times

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We have examined the optical absorption and spin‐resonance signal characteristics of thin layers of silicon damaged by an abrasive process at room temperature. We find an Urbach‐like dependence of the subgap absorption and a g=2.0055 isotropic spin‐resonance signal characteristic of silicon dangling bonds. Changes in the optical and spin‐resonance data caused by thermal anneals in air, or in atomic hydrogen, indicate that direct electronic transitions of the dangling bond defect are not responsible for the observed optical‐absorption spectra. The doping level dependence of these spectra is consistent with the hypothesis that electronic transitions arising from disorder‐induced band‐tail states cause the subgap absorption.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Compositional dependence of the Auger coefficient for InGaAsP lattice matched to InP

W. Bardyszewski and D. Yevick

J. Appl. Phys. 58, 2713 (1985); http://dx.doi.org/10.1063/1.335909 (11 pages) | Cited 19 times

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We present a detailed discussion of previous theoretical and experimental results relating to the pure‐collision and phonon‐assisted Auger coefficients of semiconductor laser materials. Subsequently, we calculate the dependence of the Auger coefficient of In1−xGaxAsyP1−y lattice matched to InP (x≊0.45y) on the compositional parameter y. Our analysis, which incorporates improved Kane model wave function overlap integrals and spectral density functions, yields results which are in good agreement with recent experiments.
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79.20.Fv Electron impact: Auger emission
42.55.Px Semiconductor lasers; laser diodes
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