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15 Sep 1985

Volume 58, Issue 6, pp. 2091-2419

Page 2 of 3 Pages Previous Page Next Page | Jump to Page

Langevin noise sources for the Boltzmann transport equations with the relaxation‐time approximation in nondegenerate semiconductors

H. S. Min and Doyeol Ahn

J. Appl. Phys. 58, 2262 (1985); http://dx.doi.org/10.1063/1.335943 (4 pages) | Cited 7 times

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An analytic and useful form of the noise sources due to intraband scattering for the Boltzmann transport equations in the relaxation‐time approximation is obtained for nondegenerate semiconductors. It is shown that the derived noise source gives the Nyquist’s theorem.
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72.70.+m Noise processes and phenomena
72.20.Dp General theory, scattering mechanisms
05.40.-a Fluctuation phenomena, random processes, noise, and Brownian motion

Observation of adsorbate‐induced surface states by elastic electron tunneling spectroscopy

H. G. LeDuc, J. Lambe, A. P. Thakoor, and S. K. Khanna

J. Appl. Phys. 58, 2266 (1985); http://dx.doi.org/10.1063/1.335944 (4 pages)

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Electronic structure induced by adsorbates at the interface of Al/AlOx/Au tunnel junctions has been observed by elastic electron tunneling spectroscopy. Strong structures appearing in the tunneling spectra above ∼1 eV after exposure to I, Hg, Bi, and organohalides, have been interpreted in terms of adsorbate‐induced surface states. The spectroscopic capabilities of elastic electron tunneling spectroscopy may be useful in the area of chemical detection. In the broader sense, the observation of adsorbate‐induced unoccupied electronic states below the vacuum energy, makes elastic electron tunneling spectroscopy a potentially useful technique for the study of surfaces.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
73.40.Rw Metal-insulator-metal structures
73.40.Gk Tunneling

Two‐dimensional balance equations in nonlinear electronic transport and application to GaAs‐GaAlAs heterojunctions

X. L. Lei, Joseph L. Birman, and C. S. Ting

J. Appl. Phys. 58, 2270 (1985); http://dx.doi.org/10.1063/1.335945 (10 pages) | Cited 115 times

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A non‐Boltzmann theory of steady‐state transport for two‐dimensional systems in a strong electric field is developed, which includes a force‐ and an energy‐balance equation. The electron temperature, impurity‐, and phonon‐limited mobilities are determined solely from these balance equations. The theory is applied to the calculation of ohmic and nonlinear transport in GaAs‐GaAlAs heterojunctions at low temperatures. Temperature‐dependent ohmic mobilities are calculated and compared with experiments. Nonlinear effects in electronic transport at low temperatures are discussed and some numerical results are presented. We also compare the present balance equations with those in the carrier temperature model.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Ht High-field and nonlinear effects
72.20.Dp General theory, scattering mechanisms

Improvement of critical current uniformity in lead‐alloy Josephson junctions

T. Imamura, S. Hasuo, and T. Yamaoka

J. Appl. Phys. 58, 2280 (1985); http://dx.doi.org/10.1063/1.335946 (5 pages) | Cited 1 time

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A lead‐alloy Josephson junction with excellent uniformity of critical currents is proposed. The junction, consisting of a thin Pb‐In‐Au base electrode and an ϵ‐phase Pb‐Bi counterelectrode, is made on a thick Nb electrode. SiO openings, which define the junction area, are formed not after but before deposition of the base electrode. Using this structure, junctions can be formed free from any wet process of photolithography from the base to counter electrodes. Current‐voltage (I‐V) characteristics of series‐connected junctions are measured and uniformity of the critical currents is estimated. Despite I‐V characteristics representing large subgap current and small gap voltage, good uniformity of the critical currents is observed. The maximum to minimum spread of critical currents is ±4.1% for a 186‐junction chain with a junction area of 5 μm square. A standard deviation of 1.5% is obtained, a value about one‐third of that obtained for the conventional lead‐alloy junctions.
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85.25.-j Superconducting devices
74.50.+r Tunneling phenomena; Josephson effects
74.25.Sv Critical currents
74.78.-w Superconducting films and low-dimensional structures

Elastic, piezoelectric, and dielectric properties of the BaLaGa3O7 crystal

W. Soluch, R. Ksiezopolski, W. Piekarczyk, M. Berkowski, M. A. Goodberlet, and J. F. Vetelino

J. Appl. Phys. 58, 2285 (1985); http://dx.doi.org/10.1063/1.335947 (3 pages) | Cited 8 times

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The elastic, piezoelectric, and dielectric constants of single‐crystal BaLaGa3O7, which belongs to the 42m class of the tetragonal system, were measured. The six independent elastic constants, two piezoelectric constants, and coupling coefficients were determined using standard resonance‐antiresonance measurements and the following results were received (cij in 1011 N/m2): c11=1.78, c12=1.03, c33=1.17, c13=0.88, c44=0.39, c66=0.54, e14=0.29 C/m2, e36=0.10 C/m2, kl14=0.141, and kl36=0.055. The two dielectric constants were measured at low frequency using a three electrode configuration. The relative values of these constants were determined to be ϵT11/ϵ0=12.7, ϵS11/ϵ0=12.4, ϵT33/ϵ0=9.5, ϵS33/ϵ0=9.5.
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77.65.-j Piezoelectricity and electromechanical effects
77.22.Ch Permittivity (dielectric function)
62.20.D- Elasticity

Measurement of optical absorption in epitaxial semiconductor layers by a photovoltage method

P. Blood

J. Appl. Phys. 58, 2288 (1985); http://dx.doi.org/10.1063/1.335948 (8 pages) | Cited 24 times

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A method has been developed for measuring optical absorption in epitaxial semiconductors in which the layer structure is grown on a substrate of narrower band gap and opposite conductivity‐type so that the intensity of light transmitted can be monitored by measuring the photovoltage generated at the buried junction using a transparent surface contact. This arrangement provides a quick method of locating the wavelengths of features in the absorption spectrum. However, it is also possible to obtain an absolute measurement of the transmitted fraction using a control sample from which the absorbing layer structure has been removed by etching, usually a matter of etching only a few microns. This result is independent of surface reflections and the linearity and spectral response of the junction. The method is described with particular reference to GaAs/AlGaAs multiple quantum well structures, though it is also applicable to single homogeneous layers, and the experimental results are in good agreement with those obtained by conventional transmission measurements on samples from which the substrate has been removed.
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75.20.Ck Nonmetals
78.40.Fy Semiconductors
07.60.-j Optical instruments and equipment
07.60.Rd Visible and ultraviolet spectrometers

Free electron density measurements by IR absorption in CdS

Jack L. Boone, Gene Cantwell, and Michael D. Shaw

J. Appl. Phys. 58, 2296 (1985); http://dx.doi.org/10.1063/1.335949 (6 pages) | Cited 3 times

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A contactless method for determining the spatial variation of the free carrier density in CdS is presented. The method involves the correlation of IR transmission with the free carrier density via the IR absorption coefficient. Preliminary measurements indicate a free electron density sensitivity of less than 5×1014 cm−3 and a spatial resolution which is limited only by the spot size of a CO2 (λ=10.6 μm) laser; this should be of the order of 100 μm. Experimental results indicate that the predominate scattering is due to impurity interaction at room temperature; this is indicative of the high degree of compensation in CdS.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.30.Hv Other nonmetallic inorganics
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

A model for low‐temperature luminescence in lithium‐ and sodium‐doped beryllium oxide single crystals

D. W. Cooke, M. S. Jahan, C. Alexander, and B. V. Shul’gin

J. Appl. Phys. 58, 2302 (1985); http://dx.doi.org/10.1063/1.335950 (6 pages) | Cited 2 times

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BeO:Li and BeO:Na single crystals have been investigated by thermoluminescence (TL) techniques in the interval 10–300 K. X‐irradiated BeO:Na exhibits an intense glow peak at 85 K and a weak one near 46 K. BeO:Li displays intense glow at 72 K. Analyses of the two strong peaks (the weak one was not amenable to analysis) yield the following TL parameters: Tm=72 K, E=0.143 eV, s=1.08×108 sec−1, and l=1.3; Tm=85 K, E=0.197 eV, s=1.05×1010 sec−1, and l=1.2, where E is the thermal activation energy, s is the frequency factor, and l is the order of kinetics. Spectral emission from the two intense glow peaks were similar, characterized by band emission with maxima near 320 and 525 nm. A model consistent with previous TL and magnetic resonance results which adequately describes our data is presented. It is suggested that the main glow peaks are due to holes released at V centers whereby they recombine with F and F+ centers. Recombination at the F center yields 525‐nm radiation whereas recombination at the F+ defect produces 320‐nm emission. Optical excitation, photobleaching, and phototransfer experiments support this model.
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78.60.Kn Thermoluminescence
78.40.Kc Metals, semimetals, and alloys
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
78.70.-g Interactions of particles and radiation with matter

Preparation effects on the UV optical properties of GeO2 glasses

J. M. Jackson, M. E. Wells, G. Kordas, D. L. Kinser, R. A. Weeks, and R. H. Magruder III

J. Appl. Phys. 58, 2308 (1985); http://dx.doi.org/10.1063/1.335951 (4 pages) | Cited 17 times

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The fusion temperature (Tϕ), the oxygen partial pressure (PO2) during melting and the quenching rate from Tϕ all influence the optical absorption in the 5.06‐eV (245‐nm) region. These observations are consistent with the assumption that the defect responsible for the optical absorption is an oxygen vacancy or complex of vacancies. The activation energy for the formation of the defect in GeO2 glasses which is repsonsible for the optical absorption is 2.3 eV which is larger than the activation energy for oxygen diffusion (∼1 eV).
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.40.Ha Other nonmetallic inorganics
81.40.Tv Optical and dielectric properties related to treatment conditions

Charge and energy transfer in collisions of Cs+ ions with a cesiated W(110) surface

P. W. van Amersfoort, J. J. C. Geerlings, L. F. Tz. Kwakman, E. H. A. Granneman, and J. Los

J. Appl. Phys. 58, 2312 (1985); http://dx.doi.org/10.1063/1.335952 (5 pages) | Cited 12 times

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A beam of Cs+ ions with an energy of 500, 1000, or 2000 eV is scattered from a cesiated W(110) target. The angle of incidence is 45° or 75° with respect to the surface normal. The charge state and energy of the scattered particles are measured. The influence of hydrogen coadsorption on the final charge state is investigated. All scattered cesium particles are neutrals when the surface work function is smaller than 2.6 eV. The scattered particles have suffered a pronounced energy loss. From the measurements an extrapolation is made to conditions relevant for surface conversion negative ion sources.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
79.60.Dp Adsorbed layers and thin films
79.70.+q Field emission, ionization, evaporation, and desorption
73.30.+y Surface double layers, Schottky barriers, and work functions

A model for the stationary cesium coverage on a converter surface in a cesium seeded hydrogen discharge

P. W. van Amersfoort, Ying Chun Tong, and E. H. A. Granneman

J. Appl. Phys. 58, 2317 (1985); http://dx.doi.org/10.1063/1.335953 (9 pages) | Cited 13 times

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A model is presented for the mechanism which establishes the dynamic equilibrium cesium coverage on a W(110) converter surface in the discharge chamber of a negative hydrogen ion source. The charge state of cesium particles arriving at the converter surface is found to be a crucial parameter. A coverage greater than 0.26 monolayers cannot be maintained if the cesium component is highly ionized. The corresponding negative hydrogen ion formation probability is far from optimum. This situation is probably present in all high‐density surface conversion negative ion sources employed nowadays.
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52.40.Hf Plasma-material interactions; boundary layer effects
29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Conductance changes in trans‐polyacetylene during oxidation

Fumihiro Ebisawa and Hisao Tabei

J. Appl. Phys. 58, 2326 (1985); http://dx.doi.org/10.1063/1.335954 (5 pages) | Cited 3 times

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The conductance of trans‐polyacetylene is measured during oxidation using an interdigital microelectrode. The measurements obtained indicate a slight increase in the conductivity during initial exposure in air and then a decrease during oxidation, which is confirmed by the corresponding changes in the infrared absorption spectra. The logarithm of conductivity is inversely proportional to the oxidation time. A proposed model which is derived from Kivelson’s theory predicts the behavior of conductivity as a function of time during oxidation. The experimental data of conductivity is in agreement with the calculated data using this model. The temperature dependence of the conductivity at certain stages also supports the theory that the electrical transport mainly occurs through intersoliton electron hopping. Thus, the electrical transport mechanism during oxidation is clarified.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
72.80.Le Polymers; organic compounds (including organic semiconductors)
72.20.-i Conductivity phenomena in semiconductors and insulators

Growth, characterization, and optical spectroscopy of Al2O3:Ti3+

Richard C. Powell, Jaroslav L. Caslavsky, Zuhair AlShaieb, and John M. Bowen

J. Appl. Phys. 58, 2331 (1985); http://dx.doi.org/10.1063/1.335955 (6 pages) | Cited 32 times

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The process of growing large diameter single crystals of Al2O3:Ti3+ by vertical solidification of the melt is described, and some of the problems in producing high‐optical quality material are discussed. The characterization of the distribution and valance state of titanium ions was performed by x‐ray techniques and laser Raman microprobe methods. The presence of other impurity ions, specifically iron, was also determined. In some cases titanium was found in the grown crystal to be in the rutile form. In addition, Ti‐Fe pairs, and concentrated regions of titanium on the surface of the boule were also observed. Some procedures for minimizing these problems are discussed. The results of optical absorption, fluorescence, and lifetime measurements are reported. The addition of Fe is shown to produce a broad absorption band in the red region of the spectrum, and two‐photon laser excitation terminating in the ultraviolet spectral region produces a broad blue emission band.
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81.10.Fq Growth from melts; zone melting and refining
78.55.Hx Other solid inorganic materials
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Spectroscopic ellipsometry and x‐ray photoelectron spectroscopy studies of the annealing behavior of amorphous Si produced by Si ion implantation

R. P. Vasquez, A. Madhukar, and A. R. Tanguay

J. Appl. Phys. 58, 2337 (1985); http://dx.doi.org/10.1063/1.335956 (7 pages) | Cited 11 times

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The dielectric functions of a‐Si prepared by Si ion implantation in Si and of subsequently thermally annealed a‐Si have been measured by means of spectroscopic ellipsometry. Differences are observed that may be accounted for only partially by differences in density, recrystallization during preparation of the anneal‐stabilized a‐Si state, or differences in the surface condition of the samples. Intrinsic changes in the bond polarizability are thus indicated. Comparison of the x‐ray photoemission results for the Si 2p core levels and the valence band states of the as‐implanted and anneal‐stabilized a‐Si samples reveals measurable changes in the valence charge distribution sufficient to substantiate a change in the bond polarizability.
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81.40.Tv Optical and dielectric properties related to treatment conditions
81.65.-b Surface treatments
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons

Computer modeling study of the effects of inhomogeneous doping and/or composition in GaAs solar‐cell devices

H. C. Hamaker

J. Appl. Phys. 58, 2344 (1985); http://dx.doi.org/10.1063/1.335957 (8 pages) | Cited 13 times

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The effects of inhomogeneous doping and/or composition profiles in the active regions of AlGaAs/GaAs heteroface solar cells have been studied using a realistic computer model. It is found that for n‐p devices with moderate surface recombination velocities S, only modest improvements in the cell efficiency are obtained by including linear or exponential profiles. Such gradients become more valuable, however, whenever (1) S increases, (2) the solar illumination is increased through concentration, or (3) a p‐n device is desired.
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84.60.Jt Photoelectric conversion
61.72.U- Doping and impurity implantation
85.30.De Semiconductor-device characterization, design, and modeling
81.40.Rs Electrical and magnetic properties related to treatment conditions

Numerical analysis of amorphous silicon solar cells: A detailed investigation of the effects of internal field distribution on cell characteristics

Tetsuro Ikegaki, Haruo Itoh, Sin’ichi Muramatsu, Sunao Matsubara, Nobuo Nakamura, Toshikazu Shimada, Jun’ichi Umeda, and Masanobu Migitaka

J. Appl. Phys. 58, 2352 (1985); http://dx.doi.org/10.1063/1.335958 (8 pages) | Cited 2 times

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This paper describes the application of a new iterative method to numerical calculation of the performance of amorphous silicon p‐i‐n solar cells. Using this method, the effects of gap‐state density, dopant impurities (B and P), and various cell parameters (diffusion length, interface recombination velocities, thickness of the i layer, etc.) on cell characteristics are investigated. The calculated results show that a strong electric field advantageously effects cell characteristics (especially through fill factor) in the i‐layer where many photocarriers are generated. However, a uniform field isn’t always adequate for high conversion efficiency. The improvement in conversion efficiency provided by boron doping is attributed to stretching of the diffusion length rather than rearrangement of the field distribution.
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84.60.Jt Photoelectric conversion

High responsivity HgCdTe heterojunction photoconductor

D. K. Arch, R. A. Wood, and D. L. Smith

J. Appl. Phys. 58, 2360 (1985); http://dx.doi.org/10.1063/1.335959 (11 pages) | Cited 8 times

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We present an experimental and theoretical study of n‐type Hg1−xCdxTe photoconductors in which a large band‐gap alloy was grown on top of a smaller band‐gap active region and contacts were made to the larger gap material. The larger band‐gap material causes an energy barrier to holes which decreases the rate at which they reach the high recombination region of the metal‐semiconductor interface. As a result, this heterojunction contact greatly reduces the effects of carrier sweepout on device performance and leads to much higher detector responsivities. Experimental results in a symmetric device with a cutoff wavelength of 7.8 μm at 77 K show responsivities in excess of 106 V/W and detectivities close to the background limited value and nonsaturation of responsivity with bias voltage. In an asymmetric device, in which only one heterojunction contact was used, an order of magnitude increase in responsivity was observed when the heterojunction contact was biased to attract minority carriers, compared with the opposite bias polarity. A theoretical model of the heterojunction contact photoconductor is presented. Calculated results are in good agreement with experimental results. The results of the calculation suggest that the optimum compositional difference Δx of the two layers should be Δx∼0.04, and that the thickness of the large band‐gap region should be 2–3 μm.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
72.40.+w Photoconduction and photovoltaic effects
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Josephson 4 K‐bit cache memory design for a prototype signal processor. I. General overview

W. H. Henkels, L. M. Geppert, J. Kadlec, P. W. Epperlein, H. Beha, W. H. Chang, and H. Jaeckel

J. Appl. Phys. 58, 2371 (1985); http://dx.doi.org/10.1063/1.335960 (8 pages) | Cited 4 times

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This paper presents an overview of the status of a Josephson cache chip design at IBM in the Fall of 1983. Details of the design, organized as 1 K×4 bits, and employing a 2.5‐μm niobium edge‐junction technology, are found in the subsequent two adjoining papers. This paper presents, in a broader perspective than the adjoining papers, the background, motivation, changes from previous designs, and general difficulties of the design. General considerations related to the fabrication process and design methodology and an overview of components and the system environment are presented. A Pb‐predecessor design is used as a point of reference; the discussions emphasize changes to that work. Finally, inherent design difficulties and remaining uncertainties are discussed.
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89.20.Ff Computer science and technology
85.25.-j Superconducting devices
89.20.Bb Industrial and technological research and development
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Josephson 4 K‐bit cache memory design for a prototype signal processor. II. Cell array and drivers

W. H. Henkels, L. M. Geppert, J. Kadlec, P. W. Epperlein, H. Beha, W. H. Chang, and H. Jaeckel

J. Appl. Phys. 58, 2379 (1985); http://dx.doi.org/10.1063/1.335961 (10 pages) | Cited 3 times

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A detailed optimized design of a 1 K‐bit memory cell array with drivers and reset gates has been carried out based upon a set of projections for achievable tolerances in linewidths, resistances, and Josephson critical currents in a 2.5‐μm technology employing niobium edge junctions. The cell operating regions were significantly widened relative to a predecessor Pb‐alloy design by adjusting gate and cell inductances, adjusting current levels, and by employing a different timing sequence for application of write controls. Much‐improved control of array‐line current oscillations, without loss of speed, was achieved by employing a distributed filtering scheme using distributed damping. The design employs trimming of currents to accommodate ±8% chip‐to‐chip differences in the average critical current. The cell size is 63×63 μm. Monte Carlo calculations of threshold curve tolerances and operating current sensitivities and tolerances lead to a design‐limited yield of about 95% for 4 K bits.
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
89.20.Bb Industrial and technological research and development
85.25.-j Superconducting devices
89.20.Ff Computer science and technology

Josephson 4 K‐bit cache memory design for a prototype signal processor. III. Decoding, sensing, and timing

W. H. Henkels, L. M. Geppert, J. Kadlec, P. W. Epperlein, H. Beha, W. H. Chang, and H. Jaeckel

J. Appl. Phys. 58, 2389 (1985); http://dx.doi.org/10.1063/1.336303 (11 pages) | Cited 2 times

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Designs for peripheral and timing circuits for a Josephson cache memory chip, organized as 1 K × 4‐bits, are described. The designs were carried out employing a 2.5‐μm minimum‐linewidth niobium edge‐junction technology, in conjunction with the memory cell and driver array design described in the preceding companion paper. Significant changes in decoding, sensing, and timing, relating to widening operating margins over a predecessor all‐Pb‐alloy design are described in detail. The resultant nominal chip access time and power are, respectively, 970 ps and 10 mW.
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
85.25.-j Superconducting devices
89.20.Bb Industrial and technological research and development
89.20.Ff Computer science and technology

Indium‐doped zinc oxide thin films prepared by rf magnetron sputtering

I. Shih and C. X. Qiu

J. Appl. Phys. 58, 2400 (1985); http://dx.doi.org/10.1063/1.335962 (2 pages) | Cited 5 times

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Indium‐doped zinc oxide films have been prepared by rf magnetron sputtering, using ZnO targets containing up to 10 wt. % In2O3. Room temperature resistivity of the deposited films was found to decrease by about four orders of magnitude as the In2O3 content was increased from 0 to 10 wt. %.
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81.15.Cd Deposition by sputtering
75.20.Ck Nonmetals
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.61.Ng Insulators

Current oscillation in modulation‐doped GaInAs/n‐GaAs strained‐layer superlattices

K. Kubota, T. Ohnishi, and T. Shiomoto

J. Appl. Phys. 58, 2402 (1985); http://dx.doi.org/10.1063/1.335936 (2 pages) | Cited 1 time

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The current oscillation was observed in modulation‐doped GaInAs/n‐GaAs strained‐layer superlattices when a high electric field was applied parallel to the layers. The critical voltage for the threshold of oscillation depended on the layer thickness. Observation of the propagation of a high‐electric‐field domain in the GaInAs layers shows that this phenomenon is the Gunn effect. Comparing with the high‐field effects in GaAs/n‐AlGaAs superlattices, we consider the role of the interface dislocations.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.55.-a Thin film structure and morphology

Method of ion reaction time amplification in time‐of‐flight mass and energy analysis

T. T. Tsong

J. Appl. Phys. 58, 2404 (1985); http://dx.doi.org/10.1063/1.335937 (3 pages) | Cited 3 times

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Very fast ion reactions can be studied with a time resolution better than 10−13 s in a time‐of‐flight spectrometer by using a time amplification method. This is done by separating the system into a very short ion acceleration‐reaction section and a very long field‐free‐flight section. An example drawn from a study of field dissociation by atomic tunneling of RhHe2+ is presented.
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82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
82.20.Rp State to state energy transfer
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Growth of crystalline zirconium dioxide films on silicon

M. Morita, H. Fukumoto, T. Imura, Y. Osaka, and M. Ichihara

J. Appl. Phys. 58, 2407 (1985); http://dx.doi.org/10.1063/1.335912 (3 pages) | Cited 41 times

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Zirconium dioxide (ZrO2) films have been grown on Si(100), Si(111), and SiO2/Si substrates heated at the range from room temperature to 800 °C by vacuum evaporation. X‐ray diffraction and reflection high‐energy electron diffraction observations reveal the epitaxial growth of tetragonal ZrO2(200) films on Si(100) substrates at 800 °C. The epitaxial imperfection is caused by preferentially oriented tetragonal ZrO2(002) grains. The crystalline system of ZrO2 films depends on the substrate temperature. The crystalline perfection and the orientation of tetragonal ZrO2 films grown at 800 °C depend on the substrate orientation.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
77.55.-g Dielectric thin films

Ga‐As liquidus at temperatures below 650 °C

J. C. DeWinter and M. A. Pollack

J. Appl. Phys. 58, 2410 (1985); http://dx.doi.org/10.1063/1.335913 (3 pages) | Cited 5 times

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Measurements of Ga‐As liquidus composition versus temperature in the range 350–650 °C are reported. The data are described by a constant interaction parameter α≊−3600±1200 cal/mole in this range, rather than the temperature dependent value of α required to fit available higher‐temperature data.
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64.75.-g Phase equilibria
64.70.D- Solid-liquid transitions
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