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15 Dec 1985

Volume 58, Issue 12, pp. R57-4744

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Nonlinear integrated optics

George I. Stegeman and Colin T. Seaton

J. Appl. Phys. 58, R57 (1985); http://dx.doi.org/10.1063/1.336205 (22 pages) | Cited 140 times

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We review the work done to date in the field of nonlinear integrated optics. Emphasis is placed on (intrinsic) second‐ and third‐order phenomena occurring in planar geometry structures and several applications are discussed. All of the nonlinear interactions are discussed in a single notation.
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42.82.-m Integrated optics
42.65.-k Nonlinear optics

Production of relativistic, rotating electron beams by gyroresonant rf acceleration in a TE111 cavity

D. B. McDermott, D. S. Furuno, and N. C. Luhmann

J. Appl. Phys. 58, 4501 (1985); http://dx.doi.org/10.1063/1.336262 (8 pages) | Cited 22 times

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The rf acceleration of moderate current (≲1 A) electron beams to 500 keV in a TE111 cylindrical cavity resonator is described. Experimental results are compared with theory. rf to beam energy conversion efficiencies in excess of 50% have been observed. The resultant axis‐encircling beam with a large ratio of perpendicular velocity to longitudinal velocity is ideal as a driver for a high‐harmonic gyrotron.
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29.25.Bx Electron sources
41.75.Fr Electron and positron beams
41.60.-m Radiation by moving charges
29.20.-c Accelerators

Electrohydrodynamically driven large‐area liquid‐metal ion sources

Arian L. Pregenzer

J. Appl. Phys. 58, 4509 (1985); http://dx.doi.org/10.1063/1.336263 (3 pages) | Cited 16 times

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Application of electrohydrodynamic instability theory to a planar liquid‐lithium surface suggests that liquid lithium may provide a large‐area ion source for intense ion‐beam diodes. Such a source could uniformly produce ions on a nanosecond time scale if the applied electric field exceeds 10 MV/cm. Wavelengths and growth times of the most rapidly growing instability have been calculated to first order as a function of applied electric field. Results have been interpreted in the context of an ion source for a light ion‐beam driver for inertial confinement fusion.
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41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
79.70.+q Field emission, ionization, evaporation, and desorption

Stability analysis of nonlinear coherent coupling

B. Daino, G. Gregori, and S. Wabnitz

J. Appl. Phys. 58, 4512 (1985); http://dx.doi.org/10.1063/1.336264 (3 pages) | Cited 77 times

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We analyze the nonlinear coupled differential equations for the nonlinear coherent coupler by extending the Stokes parameters formalism. The existence of bifurcation and instability phenomena is proved.
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63.10.+a General theory
42.25.Lc Birefringence
42.79.-e Optical elements, devices, and systems

Low‐threshold disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers

D. G. Deppe, K. C. Hsieh, N. Holonyak, R. D. Burnham, and R. L. Thornton

J. Appl. Phys. 58, 4515 (1985); http://dx.doi.org/10.1063/1.336265 (6 pages) | Cited 47 times

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Two different quantum well heterostructure wafers are used to fabricate buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers using Si‐induced layer disordering (via Si diffusion). In contrast to the first wafer (QWH1), the second quantum well wafer (QWH2) utilizes Zn instead of Mg as the p‐type dopant in the top AlxGa1−xAs confining layer and yields, because of concentration mismatch in acceptor and donor doping in the confining layers (nZn>nSe), inferior laser diodes owing to Zn diffusion from the p‐type to the n‐type confining layer during high temperature processing (850 °C Si diffusion). The first quantum well heterostructure, however, employs a lower concentration Mg doping for its p‐type confining layer (nMg<nSe) and yields high performance devices when used with the Si‐induced layer‐disordering process. For QWH1 the p‐n junction and injection is not displaced (as for QWH2) from the QW active region during Si‐induced layer disordering (850 °C annealing). A fabrication process is presented in which quantum well laser diodes are built with active regions as narrow in width as 0.6 μm, cw room‐temperature laser threshold currents as low as 3 mA, and pulsed current thresholds as low as 1.5 mA.
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42.55.Px Semiconductor lasers; laser diodes

Strain and surface damage induced by proton exchange in Y‐cut LiNbO3

A. Campari, C. Ferrari, G. Mazzi, C. Summonte, S. M. Al‐Shukri, A. Dawar, R. M. De La Rue, and A. C. G. Nutt

J. Appl. Phys. 58, 4521 (1985); http://dx.doi.org/10.1063/1.336266 (4 pages) | Cited 15 times

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When Y‐cut LiNbO3 substrates are proton exchanged in pure benzoic acid to fabricate optical waveguides, they suffer surface damage, and a consequent degradation in optical properties. This effect is mainly produced by a remarkably large strain in the exchanged layer in a direction normal to the surface. This strain leads to a large number of cracks and to the peeling off of the exchanged layer itself. This paper presents a probable explanation of the mechanism involved.
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42.79.Gn Optical waveguides and couplers
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
68.60.-p Physical properties of thin films, nonelectronic
81.40.Tv Optical and dielectric properties related to treatment conditions

Scattering of ultrasonic waves by oblate spheroidal voids of high aspect ratios

Akhlesh Lakhtakia, Vasundara V. Varadan, and Vijay K. Varadan

J. Appl. Phys. 58, 4525 (1985); http://dx.doi.org/10.1063/1.336267 (6 pages) | Cited 4 times

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The scattering of ultrasonic waves by oblate spheroidal voids of very high aspect ratios (a:b=1:20) is analyzed using the T‐matrix method. By using an iterative Gram–Schmidt orthogonalization procedure, and by enforcing the unitarity and the symmetry properties of the T matrix at each iteration, numerical results are presented for normalized frequencies kpb up to 15.0. Aspect ratios up to 1:20 and such high frequencies were previously not amenable to computations using the conventional T‐matrix procedure. Scattering by smooth as well as rough voids having periodically corrugated surfaces is studied. All computations were carried out on a DEC VAX 11/730 minicomputer.
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43.20.Fn Scattering of acoustic waves
43.20.Bi Mathematical theory of wave propagation
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants

Leaky Lamb waves in fibrous composite laminates

D. E. Chimenti and Adnan H. Nayfeh

J. Appl. Phys. 58, 4531 (1985); http://dx.doi.org/10.1063/1.336268 (8 pages) | Cited 24 times

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Results of experimental measurements and theoretical calculations on ultrasonic leaky Lamb‐wave propagation in fiber‐reinforced, unidirectional composite laminates are presented. With the Lamb wave vector oriented parallel to the fiber direction, dispersion curves of phase velocity versus frequency and plate thickness have been constructed from measurements of ultrasonic reflection from fluid‐loaded composite plates. The experimental results are supported by a theoretical model of Lamb‐wave propagation in the composite plate. The model begins with an approximate calculation of the effective, homogeneous, transversely isotropic elastic behavior of a unidirectional composite laminate in the long‐wavelength limit, using a two‐step procedure based on alternating layered media. This intermediate continuum result is then incorporated into a calculation of the ultrasonic reflection coefficient of a fluid‐loaded anisotropic plate, which is assumed to approximate the fibrous composite laminate. Good quantitative agreement with the model is found if the fiber volume fraction is taken to be an adjustable parameter. However, not all portions of the dispersion curves predicted by the model can be observed in the data. It is conjectured that relative differences in mode coupling account for this discrepancy.
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43.20.Fn Scattering of acoustic waves
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
43.20.Bi Mathematical theory of wave propagation
62.30.+d Mechanical and elastic waves; vibrations

Instability of the heat flux in a laser‐produced plasma in the presence of an ion acoustic instability

R. Dragila

J. Appl. Phys. 58, 4539 (1985); http://dx.doi.org/10.1063/1.336269 (5 pages) | Cited 1 time

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We investigate a heat flow instability arising due to transverse perturbation of an initially uniform flow. Its growth rate is shown to be determined by the magnitude of the heat flux. The presence of ion acoustic turbulence driven by the flux itself leads to stabilization of the instability due to a decrease of the transverse heat flow.
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52.35.Qz Microinstabilities (ion-acoustic, two-stream, loss-cone, beam-plasma, drift, ion- or electron-cyclotron, etc.)
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.35.Ra Plasma turbulence

Radiation effects in fluoride glasses

K. Tanimura, W. A. Sibley, M. Suscavage, and M. Drexhage

J. Appl. Phys. 58, 4544 (1985); http://dx.doi.org/10.1063/1.336270 (9 pages) | Cited 10 times

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Radiation‐induced defects in Zr‐based fluoride glasses have been characterized using optical absorption and electron spin resonance (ESR) techniques. The optical absorption bands due to interstitial fluorine atoms, the F−2, FCl−, Cl−2 centers, and Zr3+ centers have been identified by correlating optical absorption and ESR measurements. Polarized bleaching experiments indicate that the hole‐type centers, and the Zr3+ centers have anisotropic defect configurations. X‐ray excitation at 14 K generates a broad, asymmetric emission band at 337 nm (3.68 eV), which is assigned to a localized‐excited state similar to that for self‐trapped excitons in halide crystals. The intensity of the x‐ray induced emission provides further evidence that radiolysis defect production occurs in this material. The optical tail of the radiation‐induced Zr3+ absorption affects infrared transmission. Evidence is presented that the CCl4 reactive‐atmosphere process introduces a significant amount of Cl− (∼5%) in the glass.
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61.80.Fe Electron and positron radiation effects
78.55.Hx Other solid inorganic materials
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
76.30.Mi Color centers and other defects

Ion implantation of Si by 12C, 29Si, and 120Sn: Amorphization and annealing effects

Kou‐Wei Wang, William G. Spitzer, Graham K. Hubler, and Devendra K. Sadana

J. Appl. Phys. 58, 4553 (1985); http://dx.doi.org/10.1063/1.336271 (12 pages) | Cited 19 times

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Several Cr‐doped, low carrier density (10–20 Ω cm), (111)‐oriented wafers of Si were ion implanted at room temperature and ∼90 K with various doses of 12C, 29Si, and 120Sn. The ion energy was 380 keV except for 12C at 90 K where 150 keV was used. Infrared reflection as a function of frequency and cross‐sectional transmission electron microscopy measurements were made for both as‐implanted and thermally annealed (400 °C for 2 h) samples. The results of these measurements demonstrate the following: (i) The previously reported pair of metastable amorphous states are observed, a‐Si‐I for high‐dose as‐implanted material and a‐Si‐II for anneal‐stabilized material; (ii) interface positions and microstructural properties show good consistency between the two types of measurements; (iii) the measurements are consistent with the view that the implanted material can be a heterogeneous mixture of undamaged, damaged, and amorphous regions. By using an effective medium approximation and a damage cascade overlap model one concludes that no overlap is required for 120Sn to create amorphous zones, while a large number is necessary for a light ion, 14 for 12C implantations at room temperature; (iv) from several different approximation methods, average values for the critical amorphization energy are obtained, i.e., in units of 1021 keV/cm3, 1.4 for 120Sn, 2.0 for 29Si, and 13.0 for 12C (all for room‐temperature implantations) and 0.5 for all ions for 90 K implantations; (v) the measurements show that the annealing‐induced recrystallization behavior of incomplete or mixed amorphous layers is very different from that for complete or homogeneous layers which crystallized by planar epitaxial regrowth; (vi) samples were cycled between the a‐Si‐I and a‐Si‐II states and it was observed that the energy required for a‐Si‐II→a‐Si‐I is about an order of magnitude smaller than the critical amorphization energy (c‐Si→a‐Si‐I) for 29Si implantations at room temperature.
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61.72.U- Doping and impurity implantation
61.43.Fs Glasses
61.43.-j Disordered solids
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.80.Jh Ion radiation effects

A photoluminescence study of Cd‐related centers in InP

V. Swaminathan, V. M. Donnelly, and J. Long

J. Appl. Phys. 58, 4565 (1985); http://dx.doi.org/10.1063/1.336272 (8 pages) | Cited 20 times

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We report detailed studies of the low‐temperature photoluminescence of Cd‐related centers in InP. The samples consisted of Cd‐diffused InP substrates as well as Cd‐doped InP epitaxial layers grown by metalorganic chemical vapor deposition. Besides the previously identified 1.365‐eV band, a new Cd‐related band at a lower photon energy is reported. At 5.5 K, depending upon the excitation intensity, the peak position of this new band lies in the energy range 1.20–1.33 and 1.33–1.34 eV, respectively, in the substrates and in the epitaxial layers and it is broader compared to the 1.365‐eV band. The peak position of the bands shifts to higher energy with increasing excitation intensity but the change in the peak energy per decade change in excitation intensity is much larger (50 meV) for the lower‐energy band compared to the 1–2 meV shift for the 1.365‐eV band. While the excitation dependence of the bands suggests a donor‐to‐acceptor pair recombination for their origin, we present arguments to show that the larger shift of the peak energy of the lower‐energy band with excitation intensity is perhaps a consequence of the involvement of a deep donor in its origin as opposed to a shallow donor in the 1.365‐eV band. In the case of InP:Cd substrates both the 1.365‐eV band and the 1.20–1.33‐eV band exhibit thermal quenching of luminescence above 100 K with an activation energy of 54±4 meV which is comparable to the ionization energy of 56 meV for the substitutional Cd acceptor, CdIn . From this we infer that both bands involve the CdIn acceptor in the recombination process. The identity of the deep donor in the 1.20–1.33‐eV band and that of the recombination centers giving rise to the 1.33–1.34‐eV band in the InP:Cd epitaxial layers are not known. In a preliminary comparison study on InP:Zn, similar, high‐ and low‐energy Zn‐related bands are observed. It is suggested that the deep donor is related to the group II impurity.
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78.40.Fy Semiconductors

Differential scanning calorimetry studies of amorphous Zr2PdHx and Zr3RhHx

J. E. Wagner, R. C. Bowman, and J. S. Cantrell

J. Appl. Phys. 58, 4573 (1985); http://dx.doi.org/10.1063/1.336273 (9 pages) | Cited 7 times

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The effects of hydrogen concentration and crystal structure on thermal stability of amorphous Zr2PdHx and Zr3RhHx samples were studied with differential scanning calorimetery (DSC). Samples showing endothermic irreversible transitions are a‐Zr2PdHx [x=1.91 (powder and foil)/2.7] and a‐Zr3RhHx (x=3.7/4.1/5.0/5.1/5.2). Samples showing exothermic irreversible transitions are a‐Zr2Pd alloy, a‐Zr2PdH1.91 (powder and foil), a‐Zr3Rh alloy, and a‐Zr3RhHx (x=3.7/4.1/5.0/5.1). Powder x‐ray diffraction methods suggest that crystalline Zr2PdHx, ZrHx, and ZrPd are decomposition products from the Zr2PdHx system, that depend upon experimental conditions. The a‐Zr3RhHx hydrides decomposed into ZrHx phases and Rh metal. The effect of DSC heating on the products, the heats of transition, and the activation energies are the thermal data that are presented.
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81.05.Kf Glasses (including metallic glasses)
64.70.K- Solid-solid transitions

Measurements of the diffusion rate of lithium in aluminum at low temperature by elastic recoil detection analysis

C. Moreau, A. Allouche, and E. J. Knystautas

J. Appl. Phys. 58, 4582 (1985); http://dx.doi.org/10.1063/1.336250 (5 pages) | Cited 17 times

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The diffusion coefficient of lithium in aluminum has been investigated as a function of temperature between 150 and 240 °C by elastic recoil detection analysis. This dependence is found to be well described by the following expression: D =0.37(+1.30−0.28)exp{−[(126.1 ±5.2)kJ/ mol/RT]} cm2/s.
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66.30.J- Diffusion of impurities
66.30.Ny Chemical interdiffusion; diffusion barriers
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Diffusion of hydrogen in Pb β″ alumina

J. B. Bates, N. J. Dudney, and J. C. Wang

J. Appl. Phys. 58, 4587 (1985); http://dx.doi.org/10.1063/1.336251 (7 pages) | Cited 3 times

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Hydrogen diffuses into Pb β″ alumina during ion exchange of Na β″ alumina in molten lead halide salts. The hydrogen resides in the lattice as OH− groups with the protons bound at several kinds of sites. The intrinsic diffusion coefficients of hydrogen and deuterium determined from analysis of infrared absorption profiles following isotope exchange are 9.1, 5.3, and 1.1.×10−7 cm2/s at 515, 455, and 350 °C, respectively. These data fit an Arrhenius equation with an activation energy of 0.54 eV and a preexponential factor of 2.67×10−3 cm2/s. Protons are transported through the conduction layers by hopping to adjacent O= ions. The principal contribution to the activation energy is the energy required to break the O–H bond.
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66.30.H- Self-diffusion and ionic conduction in nonmetals
66.30.Ny Chemical interdiffusion; diffusion barriers
78.30.-j Infrared and Raman spectra
78.40.-q Absorption and reflection spectra: visible and ultraviolet
66.30.J- Diffusion of impurities

Optical properties of AgGa1−xInxSe2 thin films

Wha‐Tek Kim, Suk‐Ryong Hahn, Hae‐Mun Jeong, and Chang‐Sun Yun

J. Appl. Phys. 58, 4594 (1985); http://dx.doi.org/10.1063/1.336252 (4 pages) | Cited 4 times

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The variation of optical properties with the relative composition of AgGa1−xInxSe2 thin films prepared by the flash evaporation method (FEM) and the electron‐beam evaporation method (EBEM) has been investigated. Single‐crystalline films with (112) surfaces and polycrystalline thin films were grown, respectively, by FEM and EBEM with the former having the chalcopyrite structure. The energy gap for AgGa1−xInxSe2 thin films decreased with increasing X composition and a discontinuity near X=0.6 was observed for the crystalline thin films but not in the amorphous thin films. Also, the energy gap and the photoconductivity peak energy of these films decreased with increasing ambient temperature. The temperature coefficient of the energy gap is −(4–9)×10−6 eV/K (50–100 K) and −(2–7)×10−5 eV/K (100–300 K), and that of the photoconductivity peak energy is −(2.7–6.6)×10−5 eV/K (50–100 K) and −(4.3–7.8)×10−4 eV/K (100–300 K).
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75.20.Ck Nonmetals
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.60.-p Physical properties of thin films, nonelectronic
68.55.-a Thin film structure and morphology

Study of molybdenum‐aluminum interdiffusion kinetics and contact resistance for VLSI applications

R. N. Singh, D. M. Brown, M. J. Kim, and G. A. Smith

J. Appl. Phys. 58, 4598 (1985); http://dx.doi.org/10.1063/1.336227 (7 pages) | Cited 4 times

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Interdiffusion barrier characteristics of molybdenum thin film with aluminum‐1% Si is studied between 733 and 763 K via sheet and contact resistance measurements, Rutherford backscattering spectrometry, secondary ion mass spectrometry, and x‐ray diffraction analysis. The results indicate that thermal annealing of Mo/Al‐1% Si thin film couples leads to MoAl12 compound formation initially as a nonplanar front, but extensive annealing results in complete transformation of Al‐1% Si to MoAl12 and a significant increase in contact resistance. The interdiffusion kinetics is diffusion controlled and shows parabolic time dependence, incubation periods, and extremely high activation energy value of 5.9 eV. The incubation periods and an high activation energy values are explained by the presence of silicon precipitates at the Mo/Al‐1% Si interface. Implications of these observations to VLSI device characteristics are discussed and a safe time‐temperature processing regime is proposed.
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66.30.Ny Chemical interdiffusion; diffusion barriers
73.40.Cg Contact resistance, contact potential
73.40.Jn Metal-to-metal contacts
85.40.Bh Computer-aided design of microcircuits; layout and modeling

Transmission electron microscopy and Auger electron spectroscopy of silicon‐on‐insulator structures prepared by high‐dose implantation of nitrogen

J. Petruzzello, T. F. McGee, M. H. Frommer, V. Rumennik, P. A. Walters, and C. J. Chou

J. Appl. Phys. 58, 4605 (1985); http://dx.doi.org/10.1063/1.336228 (9 pages) | Cited 32 times

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The effects of substrate temperature and ion dose on silicon‐on‐insulator structures prepared by nitrogen implantation were characterized by transmission electron microscopy and Auger electron spectroscopy. Substrate temperatures below 200 °C during implantation result in amorphous surface layers that become polycrystalline after annealing. Implantation above 800 °C leaves the surface single crystalline containing a high density of defects. The majority of these defects are removed after annealing. High nitrogen doses (1.6×1018 cm−2 at 150 keV) resulted in two nitride layers separated by a porous region. This porous region may be attributed to the creation of N2 gas. A continuous nitride layer, without a porous region, was formed using a nitrogen dose of 9.4×1017 cm−2. When a nitrogen dose of 4×1017 cm−2 is used, however, it results in a two‐phase layer containing amorphous nitride and Si crystallites.
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68.55.-a Thin film structure and morphology
61.72.U- Doping and impurity implantation
61.80.Jh Ion radiation effects
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Electron and hole impact ionization coefficients in (100) and in (111) Si

V. M. Robbins, T. Wang, K. F. Brennan, K. Hess, and G. E. Stillman

J. Appl. Phys. 58, 4614 (1985); http://dx.doi.org/10.1063/1.336229 (4 pages) | Cited 12 times

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The impact ionization coefficients for electrons and holes in both (100)‐ and (111)‐oriented Si have been determined from photocurrent measurements performed on reach‐through avalanche photodiodes. The results for both orientations are similar, indicating that the ionization coefficients are isotropic. Monte Carlo calculations of the impact ionization coefficients compare favorably with the experimental results.
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72.20.Ht High-field and nonlinear effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.40.+w Photoconduction and photovoltaic effects
85.60.Dw Photodiodes; phototransistors; photoresistors

Decay kinetics of photoconductivity of PbSnTe doped with indium

Antonio Martinez, Francisco Santiago, John L. Davis, Bland Houston, and H. D. Drew

J. Appl. Phys. 58, 4618 (1985); http://dx.doi.org/10.1063/1.336230 (3 pages) | Cited 2 times

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The temporal decay of persistent photoconductivity in PbSnTe films doped with indium were fit using a phenomenological model featuring a quasi‐Fermi level‐dependent activation energy. The resulting decay curves are nonexponential with a very fast initial relaxation followed by a slower decay due to an increase in the effective activation energy as the quasi‐Fermi level decreases. Numerical solutions to the rate equation governing the relaxation were used to fit the data with excellent results. The activation energy in the limit of low carrier densities is found to be 24 meV.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Schottky barrier height variations on the polar (111) faces of n‐GaP

G. P. Schwartz and G. J. Gualtieri

J. Appl. Phys. 58, 4621 (1985); http://dx.doi.org/10.1063/1.336231 (5 pages) | Cited 1 time

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Current‐voltage, capacitance‐voltage, and photoresponse measurements have been reexamined on the polar Ga‐(111)A and P‐(∼(111)) B surfaces of n‐GaP for reactive (Al) and nonreactive (Ag) metals. Using a chemical etching/in vacuo desorption cleaning sequence, nearly oxide‐free A and B faces could be obtained. For diodes formed on such surfaces, the intrinsic, face‐dependent variation in A and B Schottky barrier heights was less than 30 meV.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts

Effects of deep Fe acceptors on the impedance of a semi‐insulating n‐type Fe‐doped InP Schottky barrier

K. Hattori, U. Uraoka, and T. Fujii

J. Appl. Phys. 58, 4626 (1985); http://dx.doi.org/10.1063/1.336232 (7 pages) | Cited 1 time

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The capacitive response of deep Fe acceptors in a semi‐insulating n‐type Fe‐doped InP Schottky barrier has been investigated. The capacitance‐voltage (C‐V) and conductance‐voltage (G‐V) characteristics over the frequency range 0.06–100 kHz are measured at 300, 317, and 335 K. Great frequency dispersion is observed in C and G. The reverse bias dependencies of C and (G−G0) are shown to be very weak at high frequencies, where G0 is the dc conductance. As measuring frequency is lowered, (G−G0) decreases but C increases considerably. At low frequencies, the bias dependencies of C and (G−G0) are observed and measured 1/C2 versus reverse bias curves are found to be straight lines. It is shown that at low frequencies, C and (G−G0) take maxima near zero bias and rapidly decrease in a forward bias region. As temperature increases, the frequency region in which such low‐frequency characteristics are found extends more widely into a high‐frequency range. Theoretical calculations of C and (G−G0) are also carried out. The results are compared with experimental ones. Observed variations of C and G with frequency, bias voltage, and temperature are well explained in terms of the delayed response of deep Fe acceptors.
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73.30.+y Surface double layers, Schottky barriers, and work functions
78.40.Fy Semiconductors

Trapping effects in thin oxynitride layers in metal‐insulator‐semiconductor devices

A. Faigon and J. Shappir

J. Appl. Phys. 58, 4633 (1985); http://dx.doi.org/10.1063/1.336233 (5 pages) | Cited 6 times

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The trapping characteristics of thin oxynitride films obtained by the oxidation of a thermally nitrided silicon surface were studied under both tunneling and hot electron injection. Comparison with standard oxide layers yields the following differences: No net positive charge generation is observed in the investigated layers, and the rate of surface states generation is about one order of magnitude smaller. The electron trap density is estimated to be ∼6×1017 cm−3 with a capture cross section of ∼10−17 cm2.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.20.-r Electron states at surfaces and interfaces
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments

Artificial oxide barriers for NbN tunnel junctions

J. Talvacchio, J. R. Gavaler, A. I. Braginski, and M. A. Janocko

J. Appl. Phys. 58, 4638 (1985); http://dx.doi.org/10.1063/1.336234 (5 pages) | Cited 13 times

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Superconducting tunnel junctions have been prepared with NbN‐base electrodes, oxidized Al or Mg tunnel barriers, and NbN or Pb counterelectrodes. The tunnel barriers were formed either by thermal oxidation at room temperature or by subjecting the thin overlayers of Al or Mg to a low‐energy ion beam in an argon‐5% oxygen background. High‐quality junctions with Pb counterelectrodes were produced by either method. However, for junctions with NbN counterelectrodes deposited at room temperature, the thermal oxidation resulted in shorts and the ion‐beam oxidation resulted in low‐leakage junction. X‐ray photoelectron spectroscopy measurements of the NbN artificial‐oxide bilayers showed that the ion‐beam treatment increased the aluminum oxide thickness by the minimum detectable increment, approximately 0.2 nm, and increased the MgO thickness by 1 nm. The superconducting energy gap inferred for NbN counterelectrodes was typically half as large as the gap of the NbN base. Limitations on the gap values of NbN counterelectrodes grown on these barriers were established by measuring the energy gap of films as thin as 7.5 nm.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices

High Tc superconducting NbN films deposited at room temperature

S. Thakoor, J. L. Lamb, A. P. Thakoor, and S. K. Khanna

J. Appl. Phys. 58, 4643 (1985); http://dx.doi.org/10.1063/1.336235 (6 pages) | Cited 25 times

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Thin films of niobium nitride with superconducting transition temperature (Tc ) of 15.7 K have been deposited on a variety of amorphous as well as crystalline substrates including glass, glazed ceramic, fused quartz, and sapphire, maintained at room temperature, by dc reactive magnetron sputtering in a mixture of Ar and N2 gases. The effects of the deposition conditions, particularly the carrier gas pressure and composition, on the film crystal structure, orientation, and resistivity have been studied in an effort to maximize the superconducting transition temperature. A study of the variation of nitrogen consumption with nitrogen injection pressures for constant background argon pressures is conducted and found to be an absolute indicator of the NbN formation systematics. Initially, the consumption increases linearly with the injection pressure but beyond a certain threshold, it shows a distinct drop. The desired high Tc  NbN with B1 crystal structure is formed in the vicinity of this turning point of the reactive gas consumption‐injection characteristic. High Tc films possess B1 (fcc, NaCl‐type) crystal structure as revealed by their x‐ray diffraction patterns. An initial increase in the injection pressure of the reactive gas (N2) results in a remarkable increase in the (111) diffraction line intensity along with an increase in the film Tc. This trend continues up to the turning point of consumption‐injection characteristic, beyond which the crystal structure distorts into the substoichiometric tetragonal phase with a consequent reduction in the transition temperature. A general protocol for studying the formation systematics of transition metal nitrides has thus emerged.
Show PACS
74.25.-q Properties of superconductors
68.55.-a Thin film structure and morphology
74.78.-w Superconducting films and low-dimensional structures
81.15.Cd Deposition by sputtering
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