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15 Jun 1985

Volume 57, Issue 12, pp. 5123-5543

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Temperature rise induced by a cw laser beam revisited

E. Liarokapis and Y. S. Raptis

J. Appl. Phys. 57, 5123 (1985); http://dx.doi.org/10.1063/1.335245 (4 pages) | Cited 31 times

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The problem of spatial distribution of the temperature rise due to a cw laser beam focused on the surface of an absorbing material is reexamined. The effect of temperature dependence of the absorption and reflection coefficients is incorporated in the calculations in a self‐consistent way. A Green’s function has been developed for the heat diffusion equation in the axially symmetric case and a general steady‐state solution is obtained for an arbitrary source function. Compared with previous results, our calculations predict melting at lower laser power densities and changes in the spatial temperature distribution. In the limit of large absorption constants these differences are small. However, they become increasingly significant as the absorption constant is decreased.
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79.20.Ds Laser-beam impact phenomena
44.10.+i Heat conduction
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
68.90.+g Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and low-dimensional structures (restricted to new topics in section 68)

Computer modeling experiments on tetrahedral interstitial‐kink interactions with a special reference to induced Snoek peak

Tarik Ö. Ogurtani and Alfred K. Seeger

J. Appl. Phys. 57, 5127 (1985); http://dx.doi.org/10.1063/1.335246 (12 pages) | Cited 5 times

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The energy dissipation per cycle due to the harmonic rigid motion of geometric kinks (built‐in) in the atmosphere of light interstitials which are hopping between tetrahedral sites is investigated analytically as well as numerically in terms of discrete Fourier k space plus Laplace transformation technique. In the linear response case a discrete Debye‐type relaxation spectrum with six distinct branches is found to represent the anelastic behavior of the system uniquely (the nearest neighbor jumps only) and exactly. It is shown by extensive computer modeling experiments that the induced and dislocation embedded kink‐enhanced Snoek peak is composed of six subpeaks, one acoustic and five optical in character. The acoustic part and the optical modes, especially the upper band which is composed of optical modes 6 and 5, are strongly and selectively associated with the isotropic (Cottrell Atmosphere) and the pure shear part (Snoek Cloud) of the elastic dipole tensor of the tetrahedral interstitials, respectively. An extremely accurate and concise analytical expression is deduced which shows that the decoupling procedure of Snoek and Cottrell atmospheres is a reliable approximation.
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61.72.jd Vacancies
61.72.jj Interstitials
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
61.72.Yx Interaction between different crystal defects; gettering effect
66.30.Lw Diffusion of other defects
61.72.Lk Linear defects: dislocations, disclinations

Electron trapping in amorphous SiO2 studied by charge buildup under electron bombardment

J. P. Vigouroux, J. P. Duraud, A. Le Moel, C. Le Gressus, and D. L. Griscom

J. Appl. Phys. 57, 5139 (1985); http://dx.doi.org/10.1063/1.335247 (6 pages) | Cited 84 times

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Electron bombardment of thick pure SiO2 induces the buildup of a negative charge which can be observed through a ‘‘mirror’’ effect in a conventional Auger scanning microscope. A mechanism for the creation of this charge is proposed in terms of trapping of an electron in defects due to the irradiating beam. The influence of temperature is studied on amorphous and monocrystalline SiO2. The temperature dependence of the existence of high negative charge shows around 270 °C an anomalous effect which depends on the irradiation time. The role of electronic excitation to produce defects in silica is discussed.
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61.80.Fe Electron and positron radiation effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
79.20.Kz Other electron-impact emission phenomena
71.55.Jv Disordered structures; amorphous and glassy solids

Suppression of thermal donor formation in heavily doped n‐type silicon

Kazumi Wada and Naohisa Inoue

J. Appl. Phys. 57, 5145 (1985); http://dx.doi.org/10.1063/1.335248 (3 pages) | Cited 5 times

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It is found by deep level transient spectroscopy (DLTS) that the oxygen thermal donor formation is suppressed in Czochralski silicon doped with donor impurities more than 1×1016 cm−3. The result is explained by a new model considering electron‐hole equilibrium. The dopant concentration dependence of the thermal donor formation is analyzed, based on the model, and it is concluded that the thermal donor is a doubly charged donor.
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61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
78.40.Fy Semiconductors
61.72.J- Point defects and defect clusters

Hydrogenation and annealing kinetics of group‐III acceptors in oxidized silicon

Chih‐Tang Sah, Samuel Cheng‐Sheng Pan, and Charles Ching‐Hsiang Hsu

J. Appl. Phys. 57, 5148 (1985); http://dx.doi.org/10.1063/1.335249 (14 pages) | Cited 43 times

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Acceptor (B, Al, Ga, and In) density versus time curves during avalanche electron injection (AEI) and constant‐temperature thermal annealing experiments obtained from metal‐oxide‐silicon capacitors (MOSCs) show two distinguishable phases. The time dependence of the acceptor density during AEI shows an initial delay due to electron‐impact release of hydrogen trapped in the gate conductor and oxide layers and a long‐time decay due to the thermal capture and electron‐impact emission of the atomic hydrogen at the group‐III acceptor centers in the silicon surface layer. Thermal anneal of hydrogenated acceptor begins at 50 °C for boron and 100 °C for Al, Ga, and In. The initial phase during thermal annealing of AEIed MOSCs follows a first order kinetics at higher annealing temperatures, reaching a steady‐state acceptor density before the second phase begins. The long‐time anneal follows strictly a second‐order kinetics which is rate limited by the recombination of two hydrogen atoms to form a molecule. Incomplete anneal is observed at higher temperatures when the dissociation rate of the hydrogen molecule becomes comparable with the recombination rate of two hydrogen atoms. Analytical solutions are obtained which account for all the details of the observed hydrogenation and annealing curves. These solutions are used to evaluate the thermal capture and emission rates and electron‐impact emission rates of hydrogen or proton at the group‐III impurity centers and the bimolecular generation and recombination rates of hydrogen. A new concept of hydrogen or proton traps in analogy to the electronic hole or electron traps is introduced to analyze the kinetics and account for the observed chemical trends between thermal capture and emission rates, thermal activation energy and bond strength. Chemical trends are noted which are consistent with the trapped proton activation energy and hydrogen bond strength trend, B<Al<Ga<In.
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61.72.U- Doping and impurity implantation
61.80.Fe Electron and positron radiation effects
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.65.-b Surface treatments

Influence of ionizing radiation on predamaged, amorphous SiO2

R. A. B. Devine and C. Fiori

J. Appl. Phys. 57, 5162 (1985); http://dx.doi.org/10.1063/1.335250 (7 pages) | Cited 6 times

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The influence of low‐energy (E∼5 eV per proton) ionizing radiation on predamaged, amorphous SiO2 has been studied through the electron spin resonance of oxygen vacancy centers (E′1). It is demonstrated that the observed line shapes can be explained in terms of dipolar broadening. By independent methods, line‐shape fitting, and numerical integration, we extract the defect density as a function of low‐energy irradiation dose and observe significant annealing for doses in excess of 10 J/cm2 accumulated. For medium‐energy proton irradiations, contradictory results of line fitting and integration suggest the overall number of defects increases during proton irradiation but the mean defect density decreases (i.e., the defect‐defect spacing increases). The fractional increase in defect numbers is much smaller than that found by others using 1‐MeV electron irradiation.
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61.80.-x Physical radiation effects, radiation damage
76.30.Mi Color centers and other defects
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
71.23.-k Electronic structure of disordered solids

Stochastic model for grain size versus dose in implanted and annealed polycrystalline silicon films on SiO2

R. B. Iverson and R. Reif

J. Appl. Phys. 57, 5169 (1985); http://dx.doi.org/10.1063/1.335251 (7 pages) | Cited 37 times

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160‐nm polycrystalline silicon films were implanted at room temperature with 100‐keV silicon ions and subsequently annealed. The final grain size was found to increase with implant dose. A model is presented here to account for the dose dependence of the grain size. Three mechanisms were presumed to account for the final grain size: statistical variations of area coverage by the implanted ions, ion channeling, and spontaneous nucleation. Model parameters were successfully fit to the experimental data.
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61.80.Jh Ion radiation effects
61.72.U- Doping and impurity implantation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Damage center formation in SiO2 thin films by fast electron irradiation

R. L. Pfeffer

J. Appl. Phys. 57, 5176 (1985); http://dx.doi.org/10.1063/1.335252 (5 pages) | Cited 28 times

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The concentrations of E′ centers (ESR‐active oxygen vacancies) produced by 30–160 keV electron irradiation have been measured in thermal SiO2 films at doses far exceeding any previously reported. The dependences of these concentrations on electron energy and fluence were measured in both steam‐grown and dry oxides. Results indicated that ionization rather than atomic displacement is the predominant formation mechanism. Significant differences in dose dependence were found between oxide types, reflecting the role of hydrogen in damage annealing.
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61.80.Fe Electron and positron radiation effects
71.55.Ht Other nonmetals
61.72.jn Color centers
76.30.Mi Color centers and other defects

Diffusion and electrical properties of silicon‐doped gallium arsenide

Mark E. Greiner and James F. Gibbons

J. Appl. Phys. 57, 5181 (1985); http://dx.doi.org/10.1063/1.335253 (7 pages) | Cited 60 times

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The amphoteric nature of silicon in gallium arsenide is used to develop diffusion and electrical compensation mechanisms. The diffusion mechanism is based on the formation and diffusion of nearest‐neighbor donor‐acceptor pairs. General solutions are presented that predict abrupt diffusion fronts for a wide range of pairing conditions. Experiments support the application of this mechanism to Si diffusion in GaAs at high concentrations. A compensation mechanism for amphoteric dopants is developed as well. The compensation process is driven primarily by the free‐electron concentration. Nearly complete compensation is predicted for large dopant concentrations.
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66.30.J- Diffusion of impurities
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ey III-V and II-VI semiconductors

Atomic structure model for Ga1−xInxAs solid solution

T. Fukui

J. Appl. Phys. 57, 5188 (1985); http://dx.doi.org/10.1063/1.335254 (4 pages) | Cited 26 times

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A simple atomic structure model was proposed for Ga1−xInxAs solid solution. Distortion energy caused by the differences in Ga‐As and In‐As bond lengths was calculated using the valence‐force‐field approach. Calculated bond lengths for Ga1−xInxAs agree well with the extended x‐ray absorption fine structure data. The calculated mixing enthalpy which corresponds to the excess energy caused by distortions agree with that from phase diagram.
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61.66.Fn Inorganic compounds
65.20.-w Thermal properties of liquids
65.40.gd Entropy

Radiation‐induced traps in low‐energy proton‐irradiated GaAs solar cells

Michel Roux and Philippe André

J. Appl. Phys. 57, 5192 (1985); http://dx.doi.org/10.1063/1.335255 (4 pages) | Cited 7 times

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Trapping centers produced by 250‐keV, 400‐keV, 700‐keV, and 1.5‐MeV proton irradiations at room temperature in AlGaAs‐GaAs solar cells have been studied. The traps detected by deep‐level transient spectroscopy are the same as those produced by electron irradiations, only their introduction rates are different. An introduction rate was determined for each trapping center at the various proton energies. The large concentration of the E4 trap suggests it is associated with a cluster‐type defect.
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61.80.Jh Ion radiation effects
61.72.J- Point defects and defect clusters
84.60.Jt Photoelectric conversion
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Selective saturation of paramagnetic defects in electron‐ and neutron‐irradiated GaAs

A. Goltzene, B. Meyer, C. Schwab, R. B. Beall, R. C. Newman, J. E. Whitehouse, and J. Woodhead

J. Appl. Phys. 57, 5196 (1985); http://dx.doi.org/10.1063/1.335256 (3 pages) | Cited 16 times

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A comparison of the electron paramagnetic resonance spectra obtained in fast neutron‐ and electron‐irradiated GaAs crystals has confirmed the simultaneous presence of the quadruplet and singlet spectra, ascribed previously to As4+Ga and V2−Ga centers. Only in electron‐irradiated material, however, are both signals separated by the selective microwave power saturation of the quadruplet. This apparent disparity is ascribed to a difference in the coupling between the two partners in the As4+Ga‐V2−Ga associated complexes.
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61.80.Fe Electron and positron radiation effects
76.30.Mi Color centers and other defects
61.80.Hg Neutron radiation effects

High‐resolution electron‐microscopy studies on laser‐annealed unsupported amorphous germanium films

C. Cesari, G. Nihoul, J. Marfaing, W. Marine, and B. Mutaftschiev

J. Appl. Phys. 57, 5199 (1985); http://dx.doi.org/10.1063/1.335257 (6 pages) | Cited 9 times

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The first results on high‐resolution electron‐microscope observations of unsupported amorphous germanium films, crystallized in situ by pulsed laser irradiation, are presented. They provide new information on structure and perfection of the as‐grown crystals and on the morphology of the crystal‐amorphous interface. It is shown that, after crystallization, amorphous regions can exist as inclusions among dendrites. The structure of the crystal‐amorphous interface depends on its crystallographic orientation and is probably related to the degree of relaxation of the amorphous phase in its immediate vicinity.
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68.55.-a Thin film structure and morphology
79.20.Ds Laser-beam impact phenomena
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Radiation‐induced transient acoustic loss in quartz crystals

D. R. Koehler and J. J. Martin

J. Appl. Phys. 57, 5205 (1985); http://dx.doi.org/10.1063/1.335258 (6 pages) | Cited 8 times

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When exposed to pulsed ionizing radiation, quartz oscillator crystals can exhibit transient acoustic losses (a decrease in Q) and transient frequency shifts. Although these changes are usually most pronounced in unswept quartz, they have also been seen in swept quartz. We have directly measured the transient acoustic loss in both synthetic and natural quartz. The synthetic quartz samples included hydrogen and lithium swept units. Irradiations were accomplished at REBA, a flash x‐ray facility at Sandia Laboratories. Log decrement acoustic loss measurements were made over the 110–400 K temperature range and show a time dependence similar to a t−1/2 behavior characteristic of one‐dimensional diffusion. The transient loss showed a broad temperature dependence ascribed to alkali ions moving along the Z‐axis channels. Peaks at 360 and 380 K in the transient loss temperature spectra are thought to be due to an unstable defect which momentarily traps the alkali ion.
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61.80.Ed γ-ray effects
61.72.J- Point defects and defect clusters
77.65.-j Piezoelectricity and electromechanical effects
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants

Diffusion and solubility of copper in germanium

N. A. Stolwijk, W. Frank, J. Hölzl, S. J. Pearton, and E. E. Haller

J. Appl. Phys. 57, 5211 (1985); http://dx.doi.org/10.1063/1.335259 (9 pages) | Cited 28 times

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Diffusion profiles and the solubility of Cu in Ge were measured in the temperature interval 850–1200 K by means of the spreading‐resistance technique. From these data it is concluded that the diffusion of Cu in Ge involves the interchange between a highly mobile interstitial configuration, Cui, and a practically immobile substitutional configuration, Cus, with the aid of vacancies, V, via the so‐called dissociative mechanism, Cui+V⇄Cus. The excellent agreement of the values of the vacancy contribution to the tracer self‐diffusion coefficient in Ge, as calculated from our diffusivity and solubility data on Cu in Ge, with directly measured values of the 71Ge tracer self‐diffusion coefficient from the literature demonstrates that self‐diffusion in Ge occurs via vacancies. A comparison with the mechanisms of Au and self‐diffusion in Si is presented.
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66.30.J- Diffusion of impurities
66.30.Fq Self-diffusion in metals, semimetals, and alloys
61.72.jd Vacancies
61.72.jj Interstitials
64.75.-g Phase equilibria

Diffusion of ion‐implanted In and Tl in SiO2

A. H. van Ommen

J. Appl. Phys. 57, 5220 (1985); http://dx.doi.org/10.1063/1.335260 (6 pages) | Cited 3 times

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The diffusion of In and Tl implanted into SiO2 has been investigated by means of Rutherford backscattering spectrometry. The diffusion of these elements is shown to be strongly dependent on their chemical state in SiO2. By combining these results with previous results for Ga, a general model has been formulated which describes the incorporation and diffusion of Group III elements in SiO2. The most important parameter of this model is the valence state of these elements in SiO2. In their trivalent state these elements are incorporated on Si sites of the SiO2 network, where they are virtually immobile. On the other hand, interstitial monovalent Group III ions are observed to show rapid diffusion. In addition to this, there is a second independent diffusion process, which is attributed to interstitial migration of InOH or TlOH molecules. After high‐temperature annealing of SiO2 covered with Si3N4, the In and Tl diffusion profiles exhibit a peak at the SiO2‐Si interface. This segregation is tentatively explained by stress relief at the SiO2‐Si interface.
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66.30.J- Diffusion of impurities
61.72.U- Doping and impurity implantation

Permeation characteristics of some iron and nickel based alloys

Dean J. Mitchell and Ellen M. Edge

J. Appl. Phys. 57, 5226 (1985); http://dx.doi.org/10.1063/1.335261 (10 pages) | Cited 1 time

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The permeation characteristics of deuterium in several iron and nickel based alloys were measured by the gas phase breakthrough technique in the temperature range 100 to 500 °C with applied pressures ranging from 10 Pa to 100 kPa. The restriction of the gas flux imposed by surface oxides was modeled in order to evaluate the effects of surface oxide retardation of the gas flux on the effective values of the deuterium permeabilities and diffusivities in the alloys. The most permeable alloys were 430 and 431 stainless steels. The next most permeable alloy was Monel K‐500, which exceeded the permeability of pure Ni by more than a factor of five at room temperature. The alloys with permeabilities less than pure Ni were, in order of decreasing permeability: the Inconels 625, 718, and 750, the Fe‐Ni‐Co glass‐sealing alloys Kovar and Ceramvar, and the 300‐series stainless steels. Deuterium trapping within the alloys appeared to influence the values of bulk diffusivities, which were not correlated with either the permeabilities or the chemical compositions of the alloys.
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66.30.J- Diffusion of impurities
82.39.Wj Ion exchange, dialysis, osmosis, electro-osmosis, membrane processes

Pressure concentration isotherms of thin films of the palladium‐hydrogen system as modified by film thickness, hydrogen cycling, and stress

Ming‐Way Lee and R. Glosser

J. Appl. Phys. 57, 5236 (1985); http://dx.doi.org/10.1063/1.335262 (4 pages) | Cited 28 times

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We describe the results of a novel adaptation of the volumetric technique to measurement of the pressure concentration isotherms for thin films of the palladium‐hydrogen system. The isotherm shapes are comparable to bulk being steep in the alpha and beta phases and flat in the mixed phase region. However, it is noted that the concentration onset of the beta phase is smaller than bulk and drops markedly for thicknesses less than 670 Å. Comparison is made with quartz crystal microbalance results. We find a thickness dependence to the number of absorption‐desorption cycles required to obtain reproducible isotherms.
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68.60.-p Physical properties of thin films, nonelectronic
64.70.Hz Solid-vapor transitions
81.30.Bx Phase diagrams of metals, alloys, and oxides

Metastable phase formation in titanium‐silicon thin films

Robert Beyers and Robert Sinclair

J. Appl. Phys. 57, 5240 (1985); http://dx.doi.org/10.1063/1.335263 (6 pages) | Cited 247 times

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The formation of TiSi2 thin films on silicon substrates has been investigated with several transmission electron microscope techniques. For films formed either by reacting titanium with a silicon substrate or by sintering a codeposited (Ti+Si) mixture, electron diffraction patterns show that a metastable phase—TiSi2 (C49 or ZrSi2 structure)—forms prior to the equilibrium phase—TiSi2 (C54 structure). High‐resolution images indicate that the metastable TiSi2‐silicon interface is atomically sharp, with no ‘‘glassy membrane’’ layer present. The annealing temperature required to transform the metastable TiSi2 to the low resistivity, equilibrium TiSi2 increases as the thin‐film impurity content increases. Previous studies of TiSi2 formation are discussed in light of these results.
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68.55.-a Thin film structure and morphology
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Interfacial reactions of iron thin films on silicon

H. C. Cheng, T. R. Yew, and L. J. Chen

J. Appl. Phys. 57, 5246 (1985); http://dx.doi.org/10.1063/1.335264 (5 pages) | Cited 52 times

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Interfacial reactions of iron thin films on silicon have been investigated by transmission electron microscopy. FeSi was found to form after 400 °C annealing. Small amount of Fe3Si was detected in samples annealed at 450 to 500 °C. β‐FeSi2 grains were predominant with a few FeSi grains remained in samples annealed at 600 °C. β‐FeSi2 was found to be the dominant phase, whereas α‐FeSi2 was predominant in samples annealed at 900–1100 °C in N2 ambient and in vacuum, respectively. Two‐step annealings were effective in promoting the growth and improving the quality of epitaxial FeSi2. More uniform growth of epitaxial FeSi2 was observed for samples annealed in vacuum than those heat treated in N2 ambient. The mechanisms of epitaxial growth and the influence of impurities on the interfacial reactions are discussed.
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68.55.-a Thin film structure and morphology
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Titanium silicidation by halogen lamp annealing

Tatsuo Okamoto, Katsuhiro Tsukamoto, Masahiro Shimizu, and Takayuki Matsukawa

J. Appl. Phys. 57, 5251 (1985); http://dx.doi.org/10.1063/1.335265 (5 pages) | Cited 22 times

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Silicidation of titanium (Ti) thin films sputter‐deposited onto silicon (Si) was performed by the halogen lamp annealing method. This method was found to be quite effective in forming oxide‐free and homogeneous titanium disilicide (TiSi2). Temperature dependence of silicidation was investigated by using Rutherford backscattering spectroscopy, x‐ray diffraction, and sheet resistance measurements. It was found that the dominant crystal phase of silicide formed during annealing at 600 and 625 °C for 90 sec was titanium monosilicide (TiSi), and that a homogeneous TiSi2 with resistivity of ∼15 μΩ cm was formed at 700 °C. Self‐aligned TiSi2 with low resistivity can be obtained with two‐step annealing: the first‐step annealing was carried out below 600 °C and followed by removal of unreacted Ti on silicon dioxide (SiO2), and the second‐step annealing was carried out above 650 °C.
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68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering
81.40.Rs Electrical and magnetic properties related to treatment conditions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

A novel x‐ray photoelectron spectroscopy study of the Al/SiO2 interface

M. H. Hecht, R. P. Vasquez, F. J. Grunthaner, N. Zamani, and J. Maserjian

J. Appl. Phys. 57, 5256 (1985); http://dx.doi.org/10.1063/1.335266 (6 pages) | Cited 17 times

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We report on the first nondestructive measurement of the chemical and physical characteristics of the interface between bulk SiO2 and thick aluminum films. Both x‐ray photoelectron spectroscopy (XPS) and electrical measurements of unannealed, resistively evaporated Al films on thermal SiO2 indicate an atomically abrupt interface. Post metallization annealing (PMA) at 450 °C induces reduction of the SiO2 by the aluminum, at a rate consistent with the bulk reaction rate. The XPS measurement is performed from the SiO2 side after the removal of the Si substrate with XeF2 gas and thinning of the SiO2 layer with HF:ETOH. This represents a powerful new approach to the study of metal‐insulator and related interfaces.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
79.60.Jv Interfaces; heterostructures; nanostructures

Laser scan registration for lateral epitaxy of silicon‐on‐insulator stripes on silicon substrates

P. Zorabedian, T. I. Kamins, and C. I. Drowley

J. Appl. Phys. 57, 5262 (1985); http://dx.doi.org/10.1063/1.335267 (6 pages) | Cited 2 times

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An improved technique for seeded laser recrystallization of silicon‐on‐insulator stripes has been developed using a slanted elliptical beam and a computer‐controlled system to register laser scans to alignment marks on the silicon wafer. After the wafer position is automatically determined by searching for alignment marks with a low‐power beam, a raster is generated parallel to the device features, and the aligned laser beam is swept across the wafer. The dependence of the defect structure of the recrystallized films on the parameters used for scanning and the resulting thermal gradients are described. With the proper choice of parameters, defect‐free, single‐crystal silicon films over oxide stripes up to 65 μm wide have been obtained.
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68.55.-a Thin film structure and morphology
61.72.Nn Stacking faults and other planar or extended defects
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
79.20.Ds Laser-beam impact phenomena

Ion backscattering investigation of the etching of silicon with XeF2

R. B. Alexander, D. M. Heffelfinger, K. R. Padmanabhan, and J. C. Buchholz

J. Appl. Phys. 57, 5268 (1985); http://dx.doi.org/10.1063/1.335268 (3 pages) | Cited 3 times

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The etching of both amorphous and single‐crystal Si with XeF2 vapor has been investigated by ion backscattering spectrometry. The etching rate of vapor‐deposited Si measured both in situ during the etch and after completion of etching indicates a strong dependence on the partial pressure and thus the flow rate of XeF2. Single‐crystal (100) Si exhibits almost twice the etching rate of amorphous Si, which can possibly be attributed to a preferred etching direction in single crystals.
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81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Accurate, short series approximations to Fermi–Dirac integrals of order −1/2, 1/2, 1, 3/2, 2, 5/2, 3, and 7/2

P. Van Halen and D. L. Pulfrey

J. Appl. Phys. 57, 5271 (1985); http://dx.doi.org/10.1063/1.335269 (4 pages) | Cited 16 times

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Short series approximations based on the classical series expansions of the Fermi‐Dirac integrals Fj(x) are presented for the orders −1/2, 1/2, 1, 3/2, 2, 5/2, 3, and 7/2. The approximations are accurate to better than 1 part in 105 over the range − ∞ <x< ∞ .
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02.30.Mv Approximations and expansions
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