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1 Aug 1984

Volume 56, Issue 3, pp. 601-881

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Theoretical modeling of the plasma erosion opening switch for inductive storage applications

P. F. Ottinger, S. A. Goldstein, and R. A. Meger

J. Appl. Phys. 56, 774 (1984); http://dx.doi.org/10.1063/1.334006 (11 pages) | Cited 97 times

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A theoretical model for the plasma erosion opening switch (PEOS) is presented which predicts its voltage, current and impedance history as a function of the input waveforms, geometry, and switch parameters. Scaling relations for the switch operation are developed from this model. System requirements for pulse compression and power multiplication using inductive storage are derived from a simple lumped circuit analysis and a transmission line analysis. These requirements are shown to be satisfied using the PEOS as a fast opening, vacuum switch in a configuration relevant for existing high‐power accelerators. The switch model is incorporated into a transmission line code for comparison with recent inductive storage experiments. Code results agree well with the data showing conduction times of ∼60 ns and switching times of ∼10 ns with peak currents of ∼600 kA.
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52.75.Kq Plasma switches (e.g., spark gaps)
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
07.05.Tp Computer modeling and simulation
84.30.Bv Circuit theory

Effect of lateral energy transport on the momentum transfer to targets in laser produced plasmas

P. D. Gupta, P. A. Naik, and H. C. Pant

J. Appl. Phys. 56, 785 (1984); http://dx.doi.org/10.1063/1.334007 (5 pages) | Cited 2 times

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We have studied the ablation driven momentum transfer to single and layered planar targets, irradiated by a 1‐GW, 5‐nsec Nd:glass laser in the intensity range 1011–1013 W/cm2. The results show an effect of lateral energy transport on the scaling of momentum with laser intensity. Corroborative evidence for this is presented from experiments on thin foil targets.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Fi Transport properties

Glow‐discharge‐created electron beams: Cathode materials, electron gun designs, and technological applications

J. J. Rocca, J. D. Meyer, M. R. Farrell, and G. J. Collins

J. Appl. Phys. 56, 790 (1984); http://dx.doi.org/10.1063/1.334008 (8 pages) | Cited 39 times

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The operating characteristics of glow‐discharge‐created electron beams are discussed. Ten different cathode materials are compared with regard to maximum electron beam current achieved and the beam generation efficiency as measured calorimetrically. Specific electron gun designs are presented for a variety of applications that include: cw ion laser excitation; electron beam assisted chemical vapor deposition of microelectronic films; and wide area annealing of ion‐implantation damage to silicon substrates. The use of sintered metal‐ceramic (e.g., Mo‐Al2O3) cathodes to generate multikilowatt electron beams in a pure noble gas discharge is reported. Cathode materials with high secondary electron emission coefficients by ion bombardment allow for electron beam production in glow discharges at 50%–80% generation efficiency values.
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52.80.Hc Glow; corona
07.77.-n Atomic, molecular, and charged-particle sources and detectors
52.50.Dg Plasma sources
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Metastable helium density in gas discharges in He‐H2O mixtures

J. W. Sheldon, E. D. Anderson, and K. A. Hardy

J. Appl. Phys. 56, 798 (1984); http://dx.doi.org/10.1063/1.334009 (3 pages) | Cited 49 times

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A theoretical description of the positive column is presented which balances metastable loss rates due to radial diffusion and water vapor quenching with production by electron bombardment excitation. The predicted relative dependence of metastable atom density on discharge current and pressure similarity parameters is in agreement with present experiments and a previous more detailed theory.
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52.80.Hc Glow; corona
52.25.Dg Plasma kinetic equations
51.10.+y Kinetic and transport theory of gases
34.80.Dp Atomic excitation and ionization

Electrode noise in beta aluminas

James J. Brophy and Steven W. Smith

J. Appl. Phys. 56, 801 (1984); http://dx.doi.org/10.1063/1.334010 (5 pages) | Cited 4 times

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Experimental contact noise spectra of Na β″ alumina and Ag β″ alumina ceramics at room temperature exceed low‐frequency thermal noise for both blocking and ohmic electrodes. Contact noise spectra above 102 Hz for ohmic electrodes of sodium amalgam and NaI in propylene carbonate agree with Nyquist noise levels determined from ac impedance measurements, and the low‐frequency excess noise is shown to be associated with nonequilibrium electrochemical processes. Similar effects are found for ohmic silver amalgam and aqueous AgNO3 electrodes on Ag β″ alumina. Greatly increased voltage fluctuations are observed to accompany current in the sample, and both contact current noise and bulk granular current noise have similar characteristics. A total dc charge flow fo 25 C/cm2 at sodium amalgam electrodes to Na β″ alumina increases both contact and current noise many orders of magnitude and can be returned to initial levels by equivalent reverse charge flow. No corresponding changes in conventional experimental measurements, e.g., current‐voltage characteristics, are detected.
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73.40.Ns Metal-nonmetal contacts
66.10.Ed Ionic conduction
72.70.+m Noise processes and phenomena
82.45.-h Electrochemistry and electrophoresis

Two‐dimensional continuum percolation and conduction

Mitsunobu Nakamura

J. Appl. Phys. 56, 806 (1984); http://dx.doi.org/10.1063/1.334011 (4 pages) | Cited 6 times

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In physical systems, we encounter phenomena well described by the continuum percolation as often as those characterized by the lattice percolation. However, the conductivity data of the continuum percolation are scarce compared to those of the lattice percolation. With this situation in mind, we consider here two types of two‐dimensional continuum percolation problem and compute, by the finite element method, the critical volume fractions of the metallic elements for the metal‐insulator transition. We also compute the conductivities. The geometrical configuration of the first (or second) type is formed by random deposits of square metals (or holes) of the same size and orientation on an insulator substrate (or on a metal). The critical volume fractions are calculated to be, respectively, 0.58 and 0.42. We compare the computed conductivities with results from the effective‐medium approximation and from the extended Watson–Leath equation, with the measurement of Smith and Lobb and with the conductivities of composite materials having a regular structure.
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05.70.Jk Critical point phenomena
05.60.-k Transport processes
71.30.+h Metal-insulator transitions and other electronic transitions
72.20.-i Conductivity phenomena in semiconductors and insulators

The work function of sputter‐formed Re‐1%Mo

R. L. Gordon

J. Appl. Phys. 56, 810 (1984); http://dx.doi.org/10.1063/1.334012 (4 pages) | Cited 7 times

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Thermally induced changes in work function and surface composition of a sputter‐formed Re‐1%Mo alloy have been measured. Segregation of Mo to the alloy surface was accompanied by a decrease in surface work function. The relationship between surface composition and work function change fits the Topping model of dipole layer formation with dipoles being formed by electron transfer from Mo to Re. Values for the dipole moment at zero field and the polarizability of Mo on the surface of Re were found to be (5.27±0.36)×10−30 C m and (74.1±10.1) Å3, respectively. The direction of charge transfer is consistent with published electronegativity values for Mo and Re, but its magnitude of 0.126 electrons per atom was significantly smaller than the charge transfer in the bulk expected upon alloy formation.
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73.30.+y Surface double layers, Schottky barriers, and work functions
81.40.Rs Electrical and magnetic properties related to treatment conditions

Critical current and upper critical field of multifilament Nb3−xTaxSn superconductor

R. E. Schwall, G. M. Ozeryansky, S. Foner, and E. J. McNiff

J. Appl. Phys. 56, 814 (1984); http://dx.doi.org/10.1063/1.334013 (5 pages) | Cited 3 times

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Superconductive wires containing 78 filaments of Nb3−xTaxSn for 4–16 at. % Ta were produced using the external bronze process to yield a composite with an overall composition 21.4 wt. % Nb–Ta, 64.9 wt. % Cu, and 13.6 wt. % Sn. Reaction periods of 20 to 260 h at temperatures from 650 to 735 °C were used. Critical‐current densities over the entire wire cross section were 5×104 A/cm2 at 14 T and 1×104 at 19.7 T, the measured Hc2 was 27 T at 4.2 K for wires with 8 μm filaments containing approximately 4 at. % Ta. Single filament wires using a 13 wt. % bronze matrix were fabricated to determine the effect of Ta on reaction kinetics. The A15 layer thickness was approximately proportional to the square root of the reaction time and independent of tantalum concentration. The critical‐current densities are discussed in terms of A15 grain structure, stoichiometry, filament uniformity, and Hc2 enhancement.
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74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.40.-n Fluctuation phenomena

Resistance of Nb‐Pb‐alloy Josephson tunnel junctions at cryogenic and ambient temperatures

R. W. Beattie, G. B. Donaldson, and D. F. Moore

J. Appl. Phys. 56, 819 (1984); http://dx.doi.org/10.1063/1.334014 (5 pages) | Cited 5 times

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We report experimental measurements of the ratio of the tunneling resistance of edge junctions at ∼4 and ∼300 K. The results, after correction for the contribution of the electrode resistance in the normal state, are compared with theory. The temperature dependence measured in these Nb–NbOx–Pb‐alloy junctions is greater than the theory for a simple trapezoidal ∼0.5 eV high barrier. Nevertheless, the consistency of the ∼4 and ∼300 K tunneling resistances is adequate to allow the use of the resistance at ambient temperature as a process monitor in Josephson junction circuit fabrication.
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74.50.+r Tunneling phenomena; Josephson effects
73.40.Rw Metal-insulator-metal structures
85.25.-j Superconducting devices

Numerical analysis of thermomagnetic generators

Lance D. Kirol and James I. Mills

J. Appl. Phys. 56, 824 (1984); http://dx.doi.org/10.1063/1.334015 (5 pages) | Cited 6 times

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Thermomagnetic generators allow direct conversion of heat energy to electrical energy. Temperature cycling about or near the Curie temperature causes changes in magnetization, resulting in time variant magnetic flux and induced voltage in a surrounding conductor. Numerical analyses of regenerative thermomagnetic generators with perfect regeneration have been performed for three working materials: iron, gadolinium, and Ho69Fe31. Power density above 20 W/kg of shunt material and efficiency approaching Carnot limits are possible over temperature differences of 50 K. Analytical studies performed during the 1950s predicted maximum power density less than 7 W/kg and efficiency less than 1% for nonregenerative cycles.
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84.60.Rb Thermoelectric, electrogasdynamic and other direct energy conversion
85.80.Lp Magnetothermal devices

Piezoelectricity and pyroelectricity in vinylidene fluoride/trifluoroethylene copolymers

T. Furukawa, J. X. Wen, K. Suzuki, Y. Takashina, and M. Date

J. Appl. Phys. 56, 829 (1984); http://dx.doi.org/10.1063/1.334016 (6 pages) | Cited 55 times

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Piezoelectric and pyroelectric properties have been investigated in the 52/48, 65/35, and 73/27 mol % copolymers of vinylidene fluoride and trifluoroethylene. The transverse and longitudinal piezoelectric constants as well as the elastic constant were determined for undrawn samples as a function of the remanent polarization Pr created by a room‐temperature poling. The elastic constant shows a significant increase with increasing Pr. Thus, the d constant (polarization/stress) tends to saturate at high Pr. On an assumption of elastic isotropy, true e31 and e33 (polarization/strain) were calculated. It is found that e33 is proportional to Pr with a coefficient of −1.2 in three copolymers while e31 is almost zero. The results indicate that the piezoelectric activity in undrawn copolymers primarily arises from macroscopic dimensional changes while molecular dipoles are rigid. The pyroelectric constant p3 and the thermal expansion coefficient α3 were also measured in mechanically‐free samples. By the use of e31, e33, and α3, the contribution from the secondary effect was evaluated and found to be smaller than 1/4 of the total activity. The primary effect due probably to disordering of crystalline dipoles seems to play a major role in the pyroelectricity of the copolymers.
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77.65.-j Piezoelectricity and electromechanical effects
77.70.+a Pyroelectric and electrocaloric effects

Photoacoustic spectroscopy of semiconductor heterostructures by piezoelectric transducers. II. Space‐resolved detection of photoacoustic modes

K. Kubota and H. Murai

J. Appl. Phys. 56, 835 (1984); http://dx.doi.org/10.1063/1.334017 (4 pages) | Cited 1 time

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Photoacoustic spectroscopy was applied to a III‐V semiconductor heterostructure layer on a substrate to observe the indirect transition absorption edge. An array of electrodes on a piezoelectric transducer resolved spatially the excited photoacoustic vibration modes in the sample.
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68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
68.35.Ja Surface and interface dynamics and vibrations
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
43.35.Pt Surface waves in solids and liquids

Speed of the photorefractive effect in a BaTiO3 single crystal

Stephen Ducharme and Jack Feinberg

J. Appl. Phys. 56, 839 (1984); http://dx.doi.org/10.1063/1.334018 (4 pages) | Cited 57 times

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We present data on the speed of light‐induced refractive index changes in a BaTiO3 single crystal. The light‐induced erasure rate of a refractive index grating is shown to depend on optical intensity as I x where x<1. The exponent x depends weakly on temperature and increases from 0.62±0.02 to 0.71±0.02 when the temperature is varied between 12 and 40 °C. The sublinear dependence of rate on intensity implies that higher optical intensity is required to achieve high‐speed operation of BaTiO3 devices than previously thought. The dark erasure rate has an anomolously strong temperature dependence; it increases by a factor of 50 over the same temperature range. We have also determined that the number density of photorefractive charge carriers is 6×1016 cm−3 in this crystal.
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78.20.Jq Electro-optical effects
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.65.-k Nonlinear optics
72.40.+w Photoconduction and photovoltaic effects

Electric‐field‐modulated, infrared internal‐reflection study of the silicon‐electrolyte interface

E. D. Palik, R. T. Holm, and A. Stella

J. Appl. Phys. 56, 843 (1984); http://dx.doi.org/10.1063/1.334019 (7 pages) | Cited 8 times

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The electric‐field modulation of the internal‐reflection response of a Si‐electrolyte interface is shown to give information both about accumulation of free carriers, interface states, and about molecular species in the oxide or in the Helmholtz or Gouy layer. Measurements were made in either a 0.1‐M KOH or 0.1‐M H2SO4 solution and evidence of electromodulation of vibration bands of H3O+, OH, and H2O was obtained.
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73.40.Mr Semiconductor-electrolyte contacts

Nb‐H alloys: Model substances for electrothermal resistors

J.‐M. Welter

J. Appl. Phys. 56, 850 (1984); http://dx.doi.org/10.1063/1.334020 (6 pages) | Cited 1 time

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Experiments on electrothermally induced switching phenomena in metal hydrides are reported. They were made with a resistor based on a NbH0.49 alloy. The discontinuous behavior of the resistivity at the structural order‐disorder phase transition at 360 K was exploited. Some general results are derived from a heat balance model equation which emphasizes the peculiarities of structural phase transitions in metallic conductors.
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84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)
72.15.Eb Electrical and thermal conduction in crystalline metals and alloys
72.15.Jf Thermoelectric and thermomagnetic effects
44.10.+i Heat conduction

Influence of xenon on sealed‐off operation of rf‐excited CO2 waveguide lasers

D. He and D. R. Hall

J. Appl. Phys. 56, 856 (1984); http://dx.doi.org/10.1063/1.334021 (2 pages) | Cited 6 times

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The addition of xenon to helium, nitrogen CO2 gas mixtures is shown to increase output power by 24% in sealed‐off rf excited waveguide carbon dioxide lasers. Experiments with a range of laser output couplers indicate that this improvement is due to a corresponding increase in small signal gain, with the saturation intensity remaining fairly constant.
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43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

1/N expansion for Dirichlet boundary problems

L. N. Epele, H. Fanchiotti, and C. A. García‐Canal

J. Appl. Phys. 56, 858 (1984); http://dx.doi.org/10.1063/1.334022 (2 pages) | Cited 1 time

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Dirichlet problems posed by boundaries with a symmetry CN are studied via 1/N expansion. The characteristic impedance of a coaxial system consisting of a regular polygon concentric with a circle is explicitly computed as a typical application of the method.
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02.60.Lj Ordinary and partial differential equations; boundary value problems
02.30.Mv Approximations and expansions

Atomic mean excitation energies for stopping powers from local plasma oscillator strengths

J. W. Wilson, Y. J. Xu, C. K. Chang, and E. Kamaratos

J. Appl. Phys. 56, 860 (1984); http://dx.doi.org/10.1063/1.334023 (2 pages) | Cited 1 time

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Mean excitation energies for stopping by isolated atoms are accurately predicted by the plasma absorption spectrum associated with the atomic orbitals when the plasma frequency shift due to individual electron motion proposed by Pines [Phys. Rev. 92, 626 (1953)] is incorporated.
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34.50.-s Scattering of atoms and molecules
34.90.+q Other topics in atomic and molecular collision processes and interactions (restricted to new topics in section 34)

Synchronous mode locking of semiconductor laser diodes by a picosecond optoelectronic switch

E. O. Göbel, J. Kuhl, and G. Veith

J. Appl. Phys. 56, 862 (1984); http://dx.doi.org/10.1063/1.334024 (3 pages) | Cited 7 times

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Synchronous mode locking of a semiconductor diode laser and an acousto‐optically mode‐locked Ar+‐ion laser has been obtained by using a Cr‐doped GaAs picosecond optoelectronic switch for synchronous excitation. Synchronously mode‐locked pulses with 30‐ps duration (full width at half maximum) are generated at a repetition rate of 80.32 MHz with a buried heterostructure GaAs/GaAlAs double heterostructure laser.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.55.Lt Gas lasers including excimer and metal-vapor lasers
84.32.Dd Connectors, relays, and switches

Power/energy limiter using reverse saturable absorption

D. J. Harter, M. L. Shand, and Y. B. Band

J. Appl. Phys. 56, 865 (1984); http://dx.doi.org/10.1063/1.334025 (4 pages) | Cited 34 times

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In materials with an excited‐state absorption cross section larger than the ground‐state absorption cross section, increasing the incident light intensity (thus populating the excited state) increases the absorption. We show that such a reverse saturable absorber can function as a power limiter and pulse smoother for long pulses and as an energy limiter and pulse shortener for short pulses. The necessary properties for such a material are described. Reverse saturable absorption is demonstrated at 488 nm in alexandrite. A simple model describing these effects is presented.
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42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.70.-a Optical materials
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Self‐detecting light‐emitting diode optical sensor

Mark Johnson and Nan Marie Jokerst

J. Appl. Phys. 56, 869 (1984); http://dx.doi.org/10.1063/1.334026 (3 pages) | Cited 1 time

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A light‐emitting diode can be used simultaneously for illumination of a moving object and also for detection of its own reflected light. The result is a novel optical object proximity sensor of very small size and high resolution. Good performance depends on the design of a suitable low‐noise electronic preamplifier, on the choice of light‐emitting diode material and bias, and on efficient optical design using a mirror or thin‐film retroreflector. This optimization is analyzed and implemented.
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42.79.-e Optical elements, devices, and systems
42.30.-d Imaging and optical processing
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Presence of doubly‐ionized metal ions in rare gas glow discharges

M. Hecq and A. Hecq

J. Appl. Phys. 56, 872 (1984); http://dx.doi.org/10.1063/1.334027 (2 pages) | Cited 4 times

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The sputtering plasma ions are analyzed from a sampling orifice by a quadrupole mass spectrometer. The doubly‐ionized metal species have been searched in a sputtering plasma using several cathodes (Sn, Mo, Ta, Co, Pt, Pd, and Au). Mo2+, Co2+, and Sn2+ ions were measured at several Ar pressures. The IM2+ is found be dependent on the total pressure. A ‘‘hybrid Penning’’ reaction (M+Ar2+→M2++Ar++e) is suggested for the production of the doubly ionized metallic species.
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52.80.Hc Glow; corona
52.80.Vp Discharge in vacuum
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
52.20.-j Elementary processes in plasmas

Stacked thin‐film photoelectrode using iron oxide

K. Itoh and J. O’M. Bockris

J. Appl. Phys. 56, 874 (1984); http://dx.doi.org/10.1063/1.334028 (3 pages) | Cited 17 times

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For photoanodes of materials with low mobilities it is advantageous to use several layers of thickness less than the space‐charge region, thereby decreasing recombination. To compensate losses due to lack of absorption, several layers should be placed successively in the light path. Some experimental verification is described.
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85.60.Dw Photodiodes; phototransistors; photoresistors
73.90.+f Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures (Restricted to new topics in section 73)

Effect of high stretching rates on the piezoelectric behavior and the structure of polyvinylidene difluoride films

R. C. De Mattei and R. S. Feigelson

J. Appl. Phys. 56, 877 (1984); http://dx.doi.org/10.1063/1.334029 (4 pages) | Cited 2 times

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It has been shown that both the stretch rate and the ambient temperature during stretching affect the ultimate piezoactivity of the PVF2 film. The highest piezoactivity was obtained for films stretched at an 80–90 °C ambient. The piezoactivity went through a minimum at a stretch rate of 1300 mm/min and then increased. This behavior was also observed in structural changes in the films.
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77.65.-j Piezoelectricity and electromechanical effects
81.40.Rs Electrical and magnetic properties related to treatment conditions
77.55.-g Dielectric thin films
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
FREE

Erratum: Effect of modulated high‐pressure mercury discharges on the shape of self‐reversed lines [J. Appl. Phys. 54, 3087 (1983)]

J. J. Damelincourt, M. Aubes, P. Fragnac, and D. Karabourniotis

J. Appl. Phys. 56, 881 (1984); http://dx.doi.org/10.1063/1.334323 (1 page)

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Abstract Unavailable
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52.80.Mg Arcs; sparks; lightning; atmospheric electricity
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
32.70.Jz Line shapes, widths, and shifts
99.10.Cd Errata
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