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15 Dec 1984

Volume 56, Issue 12, pp. 3379-3520


A surface integral approach to determine the effects of iron on axisymmetric coil systems

J. Caldwell, A. Zisserman, and R. Saunders

J. Appl. Phys. 56, 3379 (1984); http://dx.doi.org/10.1063/1.333902 (5 pages)

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The scalar potential of any system of axisymmetric conductors can be expanded in terms of Legendre polynomials. This paper describes a method for including the effects of a spherical iron shell into the Legendre polynomial expansion. The scalar potential is found using a surface integral approach by dividing the iron surface into elements over which the potential is constant and then using point collocation. Numerical results are obtained for a range of values of permeability by varying the number of elements and are found to agree well with the analytical results.
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41.20.Cv Electrostatics; Poisson and Laplace equations, boundary-value problems
41.20.Gz Magnetostatics; magnetic shielding, magnetic induction, boundary-value problems
02.60.Nm Integral and integrodifferential equations

Defect trapping of ion‐implanted deuterium in copper

F. Besenbacher, B. Bech Nielsen, and S. M. Myers

J. Appl. Phys. 56, 3384 (1984); http://dx.doi.org/10.1063/1.333903 (10 pages) | Cited 26 times

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Trapping of ion‐implanted deuterium (D) by lattice defects in copper has been studied by ion‐beam‐analysis techniques. The evolving depth distribution of D was monitored by using the nuclear reaction D (3He, p) 4He, and the D lattice location was obtained by means of ion channeling. Linear‐ramp annealing following a 15‐keV D+ implantation revealed two annealing stages at 250 and 300 K, respectively, corresponding to trap‐binding enthalpies of 0.22 and 0.42 eV, referenced to an untrapped solution site. From a comparison of these results with theoretical calculations based on the effective‐medium theory, the 0.42‐eV trap has been associated with monovacancies and perhaps small vacancy clusters, an assignment supported by previous positron‐annihilation experiments, whereas the 0.22‐eV trap tentatively is associated with self‐interstitials. The channeling data have been analyzed, utilizing an extended multirow continuum model, and it is found that the data for D trapped to vacancies cannot be interpreted in terms of a single lattice site. This is consistent with the theoretical effective‐medium results, which show that D trapped at a vacancy is delocalized with maximum probability between the vacancy and the octahedral interstitial site, consistent with the experimental findings.
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61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
66.30.J- Diffusion of impurities

Electron paramagnetic resonance spectroscopy of fast neutron‐generated defects in GaAs

A. Goltzene, B. Meyer, C. Schwab, S. G. Greenbaum, R. J. Wagner, and T. A. Kennedy

J. Appl. Phys. 56, 3394 (1984); http://dx.doi.org/10.1063/1.333904 (5 pages) | Cited 29 times

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A series of fast neutron‐irradiated GaAs samples (neutron fluence range of 2×1015–2.5×1017 cm−2) has been investigated by electron paramagnetic resonance (EPR) spectroscopy. The EPR spectra at 9 GHz exhibit a broad (∼1 kG) Lorentzian singlet at g≊2.09 superimposed on the AsGa quadruplet. The singlet intensity scales linearly with neutron fluence as does that of the quadruplet. The presence of this new defect has not been reported in as‐grown GaAs known to have large concentrations of AsGa defects. EPR measurements at 35, 159, and 337 GHz indicate that the singlet linewidth increases with the microwave frequency.
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61.80.Hg Neutron radiation effects
61.72.J- Point defects and defect clusters
76.30.Mi Color centers and other defects

Electrothermomigration and filament growth in p‐InP with Au contacts

D. Brasen, S. Vaidya, G. W. Kammlott, and B. H. Chin

J. Appl. Phys. 56, 3399 (1984); http://dx.doi.org/10.1063/1.333905 (5 pages) | Cited 2 times

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Metal migration induced by electric field and temperature gradients has been studied in Zn‐doped InP with Au contacts. A new failure mode has been observed which involves a temperature‐induced decomposition of InP, followed by the formation of a liquid filament nucleating at the negative Au contact. The filament subsequently grows to short out the two contacts. Two forms of filaments are observed; type I is straight and narrow and contains no Au, whereas type II is broader, propagates more slowly, and contains Au. An explanation is presented to rationalize the results.
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66.30.J- Diffusion of impurities
82.45.-h Electrochemistry and electrophoresis
73.40.Ns Metal-nonmetal contacts

Cosputtered cobalt silicides on silicon, polycrystalline silicon, and silicon dioxide

S. P. Murarka and S. Vaidya

J. Appl. Phys. 56, 3404 (1984); http://dx.doi.org/10.1063/1.333906 (9 pages) | Cited 15 times

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Silicide formation in cosputtered (Co+Si) films on silicon, polycrystalline silicon, and silicon dioxide (SiO2) has been studied by using the techniques of x‐ray diffraction, Rutherford backscattering, and scanning electron microscopy and by measuring the sheet resistance and stress as a function of the composition and sintering temperature. Films with nominal Si/Co atomic ratios of 1 to 3 were investigated. The resistivity and the stress were found to be the lowest for the films with actual Si/Co ratio closest to a value of 2 (i. e., CoSi2). For silicon‐rich or silicon‐deficient films, sintering led to a Si/Co ratio variation across the thickness of the film. The magnitude of the Si/Co ratio variation was found to depend on the as‐deposited Si/Co ratio and the substrate type. The differences in Si/Co ratios at the inner and outer silicide surfaces, the resistivity, and the stress were found to increase with increasing deviations from the CoSi2 stoichiometry (Si/Co=2). At temperatures above 950 °C, an intermixing of CoSi2 and silicon occurred leading to deleterious effects on the properties of the silicide. Also in the absence of silicon (i. e., for CoSi2 films on oxide), sintering in an inert ambient at temperatures ≥ 1000 °C led to decomposition of CoSi2 into CoSi and silicon which was lost in the furnace. The decomposition, however, could be suppressed by capping the silicide with a SiO2 film or by introducing small amounts of oxygen in the annealing ambient. It has been suggested that the observed high temperature instability of cobalt silicides could be associated with (a) very narrow concentration range of stability of the cosputtered cobalt disilicide, (b) tendency of CoSi2 and Si to grow epitaxially on substrate silicon, and (c) permeability of CoSi2 to silicon diffusion at temperatures above 950° C.
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66.30.Ny Chemical interdiffusion; diffusion barriers
68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering
81.05.Bx Metals, semimetals, and alloys

Surface accumulation of manganese in Si+‐implanted and annealed semi‐insulating indium phosphide

E. V. K. Rao, N. Duhamel, and M. Gauneau

J. Appl. Phys. 56, 3413 (1984); http://dx.doi.org/10.1063/1.333907 (5 pages) | Cited 4 times

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Using low‐temperature photoluminescence and secondary ion mass spectrometry measurements, we show here that Mn, a residual impurity, accumulates in a region close to the sample surface in Si+‐ but not in Ar+‐implanted and close contact annealed bulk semi‐insulating (SI) InP(Fe). These results which constitute a first observation on the influence of the electrical nature of the species implanted in InP are tentatively explained using a simple model based on the amphoteric nature of Mn (substitutional and interstitial) and the electric field due to the charge distribution of the implanted impurities.
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66.30.J- Diffusion of impurities
61.72.U- Doping and impurity implantation

Effects of platinum silicide thickness and annealing temperature on arsenic redistribution

Peter W. Lew and C. R. Helms

J. Appl. Phys. 56, 3418 (1984); http://dx.doi.org/10.1063/1.333908 (10 pages) | Cited 8 times

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Arsenic redistribution due to PtSi formation was studied with Auger sputter profiling. Pt was sputter‐deposited onto As‐doped Si wafers (1.7×1020 cm3) with Pt thicknesses of 200, 500, and 1000Å. Samples of each Pt thickness were annealed at 400 °C for 30 min in a forming gas ambient and another set of samples were annealed at 550 °C for 30 min in forming gas. In all cases, As appeared at the PtSi surface and at the PtSi‐Si interface. More As was found at the surface for the higher temperature anneal and more As redistribution occurred overall for the thicker Pt films. The As redistribution is modeled by an initial pileup at the PtSi‐Si interface followed by As outdiffusion to the PtSi surface
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
66.30.J- Diffusion of impurities
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Effects of phosphorus diffusion on growth and shrinkage of oxidation‐induced stacking faults

Kenji Nishi and Dimitri A. Antoniadis

J. Appl. Phys. 56, 3428 (1984); http://dx.doi.org/10.1063/1.333909 (11 pages) | Cited 9 times

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Effects of phosphorus diffusion on growth and shrinkage of oxidation‐induced stacking faults (OSF) in silicon have been investigated using the Wright etch and transmission electron microscopy (TEM). Within the phosphorus‐doped layer, the Wright etch fails to delineate OSF whose existence TEM observations have confirmed. Faster growth or slower shrinkage of OSF has been observed not only during phosphorus deposition but also during subsequent annealing with increasing phosphorus dose, indicating interstitial supersaturation. A model for interstitial generation has been proposed.
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61.72.Nn Stacking faults and other planar or extended defects
66.30.J- Diffusion of impurities
61.72.jd Vacancies
61.72.jj Interstitials
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Sequential silicide formation between vanadium and amorphous silicon thin‐film bilayers

P. A. Psaras, M. Eizenberg, and K. N. Tu

J. Appl. Phys. 56, 3439 (1984); http://dx.doi.org/10.1063/1.333910 (6 pages) | Cited 8 times

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Solid‐state reactions between bilayer thin films of vanadium and amorphous silicon with an excess amount of vanadium have been studied by Rutherford backscattering spectroscopy and Seemann–Bohlin x‐ray diffraction. In prior studies of the interaction between vanadium thin films and single‐crystal silicon, VSi2 has been the only compound observed. In the present study a sequence of compounds was observed. The first silicide, VSi2, was observed to form at 475 °C. At higher temperatures the compounds V5Si3 and V3Si formed in sequence. The growth of VSi2 is linear in time with an activation energy of 2.3±0.4 eV. The growth of V5Si3 is also linear with an activation energy of 2.5±0.1 eV.
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68.55.-a Thin film structure and morphology
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.60.-p Physical properties of thin films, nonelectronic

Formation of artificial superlattice composed of ultrathin layers of CoO and NiO by reactive evaporation

Takahito Terashima and Yoshichika Bando

J. Appl. Phys. 56, 3445 (1984); http://dx.doi.org/10.1063/1.333911 (6 pages) | Cited 21 times

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Films composed of alternating ultrathin layers of CoO and NiO have been prepared by reactive evaporation. The structure was investigated by x‐ray diffraction and transmission electron microscopy (TEM). The CoO‐NiO multilayered films deposited on the (100) plane of NaCl at 250 °C were single crystal, having the NaCl structure with lattice constants intermediate between the ones of CoO and NiO when each layer was ultrathin (<5 nm). The stacking sequence could be directly observed by the cross‐sectional TEM method. The artificial periodicity in the films was also confirmed by the low angle Bragg diffraction and the satellite peaks appearing around the (200) peak. It was found that the films had an artificial superlattice consisting of coherently stacked CoO and NiO single‐crystal layers. This structure resulted from alternate epitaxial deposition of these oxides. An artificial superlattice formed also on glass substrates although they were polycrystal films.
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68.55.-a Thin film structure and morphology
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
61.05.C- X-ray diffraction and scattering
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Electronic profile of a GaAs solar cell through photoluminescence

R. E. Hollingsworth and J. R. Sites

J. Appl. Phys. 56, 3451 (1984); http://dx.doi.org/10.1063/1.333912 (6 pages) | Cited 1 time

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A p‐n junction diode is modeled as three spatial regions: n type, depletion, and p type, each of which is distinguished by its own photoluminescence signature. Variation in bias alters the spatial boundaries of these three regions; variation in excitation wavelength changes the depth which is probed. A direct electronic profile of a shallow junction GaAs photovoltaic diode as a function of bias is made using these two variations. Special care is taken in forward bias to distinguish between junction and terminal voltages and to separate out electroluminescence effects.
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78.40.Fy Semiconductors
84.60.Jt Photoelectric conversion
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.De Semiconductor-device characterization, design, and modeling

Electrical properties of MnxCd1−xSe

J. Stankiewicz and L. David

J. Appl. Phys. 56, 3457 (1984); http://dx.doi.org/10.1063/1.333913 (4 pages) | Cited 7 times

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Electrical conductivity and Hall effect of Mnx Cd1−xSe have been measured from 40 to 300 K for the composition range 0<x≤0.30. The compositional dependence of the density‐of‐state mass of conduction band was obtained by fitting to the Hall‐coefficient data, a model based upon a parabolic conduction band and a single ionized donor level. A variational calculation of the electron mobility for Mnx Cd1−xSe was performed, taking as the limiting scattering mechanisms longitudinal‐optical‐phonon scattering, acoustic‐phonon scattering, piezoelectric scattering, and scattering by charged defects. The results of this calculation are in good agreement with the experiment.
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72.80.Ey III-V and II-VI semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance
72.20.My Galvanomagnetic and other magnetotransport effects
71.20.-b Electron density of states and band structure of crystalline solids

Study of electrical resistivity of lithium‐indium thin films

Gyanesh Chandra and O. P. Katyal

J. Appl. Phys. 56, 3461 (1984); http://dx.doi.org/10.1063/1.333914 (4 pages)

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Experimental results are presented on the electrical resistivity of lithium‐indium films. The resistivity has been studied as a function of temperature (150–300 K), thickness of the films (570–3300 Å) and concentration of Li (11.0–58.7 at. %). The resistivity is observed to be minimum for samples having a Li concentration of 25 and 50 at. %. In general, resistivity varies linearly with temperature but resistivity versus temperature plot shows two distinct regions which have different slopes, i.e., dρ/dT. The role of lithium in indium‐lithium films is discussed.
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73.61.At Metal and metallic alloys

Rapid annealing of titanium silicide using a graphite strip heater

R. E. Jones, B. Z. Li, K. Daneshvar, and J. Davis

J. Appl. Phys. 56, 3465 (1984); http://dx.doi.org/10.1063/1.333896 (6 pages) | Cited 6 times

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Titanium silicide films cosputtered on a polycrystalline silicon layer over a thermally oxidized silicon wafer were rapidly annealed at various temperatures and times using a graphite strip heater. Sheet resistances comparable with those of furnace annealed samples were obtained using 45‐sec anneals at 1000–1200 °C. X‐ray diffraction revealed only the formation of a TiSi2 phase, but Rutherford backscattering showed that the amount of excess silicon beyond stoichiometric TiSi2 increased with increasing anneal temperature. Significant increases in the infrared reflectivity spectrum were observed upon annealing which suggests that front side annealing may result in better thermal uniformity across a wafer.
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73.61.At Metal and metallic alloys
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.40.Rs Electrical and magnetic properties related to treatment conditions
81.40.Tv Optical and dielectric properties related to treatment conditions

Effect of pressure on the height of the Schottky barrier (ϕB) for several semiconductors

M. J. Peanasky and H. G. Drickamer

J. Appl. Phys. 56, 3471 (1984); http://dx.doi.org/10.1063/1.333897 (5 pages) | Cited 7 times

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This paper contains the first measurements of the effect of pressure on the Schottky barrier (ϕB) at a metal‐semiconductor interface. Results are presented for CdS, CdSe, and ZnO together with measurements of the absorption edges for CdSe and ZnO. These results are used in conjunction with previously published flat‐band potential measurements on GaAs and InP to relate the change in energy of the top of valence band Ev relative to the Fermi level of the metal to the ionicity of the semiconductor. These measurements are compared to correlations of the change of ϕB with work function of the metal which have previously appeared in the literature.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts

Simple general analytical solution to the minority carrier transport in heavily doped semiconductors

C. R. Selvakumar

J. Appl. Phys. 56, 3476 (1984); http://dx.doi.org/10.1063/1.333898 (3 pages) | Cited 10 times

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A rigorous analytical evaluation of minority carrier current in a heavily doped region (such as emitter) of a semiconductor device is presented that includes position‐dependent band‐gap narrowing, position‐dependent mobility, and position‐dependent lifetime. In addition, the analysis takes into account the possible finite surface recombination velocity.
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85.30.De Semiconductor-device characterization, design, and modeling
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Amorphicity, heterogeneity, and the Arrott plots

Amikam Aharoni

J. Appl. Phys. 56, 3479 (1984); http://dx.doi.org/10.1063/1.333899 (6 pages) | Cited 12 times

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It is shown that experimental data on amorphous alloys are consistent with a heterogeneous system of ferromagnets, which implies an ill‐defined region of transition from ferromagnetism to paramagnetism. For a rather low degree of disorder, the transition may be almost as sharp as in a crystal. But in many cases a seemingly sharp transition at a well‐defined Curie point might originate from an inappropriate extrapolation of the Arrott plots. Properties and features of these plots are reviewed, with ways suggested for their interpretation.
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75.50.Kj Amorphous and quasicrystalline magnetic materials
75.30.Cr Saturation moments and magnetic susceptibilities

Mössbauer study of plastic deformation in some magnetic metallic glasses

Ajay Gupta, S. Lal, and R. P. Verma

J. Appl. Phys. 56, 3485 (1984); http://dx.doi.org/10.1063/1.333900 (5 pages) | Cited 4 times

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Plastic deformation of some magnetic transition metal–metalloid metallic glasses has been studied through Mössbauer spectroscopy and other magnetic measurements. Present studies clearly indicate generation of structural defects throughout the volume of the specimen. The elastic stress field associated with these defects results, through magnetoelastic coupling, in deterioration of soft magnetic properties and a change in the alignment of atomic spins in the sample. Cold rolling results in a decrease in the average interatomic distance. Possible origin of the roll‐induced magnetic anisotropy has been discussed. The apparent contradiction with earlier studies is interpreted in terms of the defect structure in amorphous alloys.
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75.80.+q Magnetomechanical effects, magnetostriction
75.50.Kj Amorphous and quasicrystalline magnetic materials
76.80.+y Mössbauer effect; other γ-ray spectroscopy
81.40.Rs Electrical and magnetic properties related to treatment conditions

Anisotropy, magnetic field, and stress influences on the phase transitions of spin‐flop‐type antiferromagnets

Sydney F. Machado and Constantino Tsallis

J. Appl. Phys. 56, 3490 (1984); http://dx.doi.org/10.1063/1.333901 (7 pages) | Cited 1 time

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We discuss, within a mean field approximation, the influences of anisotropy (in the spin space) and external uniaxial stress on the Heisenberg antiferromagnet in the presence of magnetic field. The phase diagram evolution (as function of anisotropy and stress) which is obtained enables a satisfactory overall interpretation of recent experiments on Mn(Br1−xClx)2⋅4H2O, K2[FeCl5(H2O)], CoCl2⋅6H2O, and (C2H5NH3)2CuCl4.
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75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.30.Gw Magnetic anisotropy
75.10.Dg Crystal-field theory and spin Hamiltonians
75.80.+q Magnetomechanical effects, magnetostriction

Bulk and surface spin waves in thin‐film antiferromagnets

R. L. Stamps and R. E. Camley

J. Appl. Phys. 56, 3497 (1984); http://dx.doi.org/10.1063/1.333915 (6 pages) | Cited 15 times

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We discuss antiferromagnetic bulk and surface spin waves, in the long wavelength region, on a finite thickness slab geometry. Implicit dispersion relations for both surface and bulk modes are derived, along with numerical calculations for MnF2 and GdAlO3. We find that the application of a magnetic field strongly localizes the surface spin wave to either the top or bottom surface of the film.
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75.30.Ds Spin waves
75.50.Ee Antiferromagnetics

Annealing of selenium‐implanted GaAs

N. J. Barrett, J. D. Grange, B. J. Sealy, and K. G. Stephens

J. Appl. Phys. 56, 3503 (1984); http://dx.doi.org/10.1063/1.333916 (5 pages) | Cited 11 times

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The electrical and structural properties of 1×1014 Se+ cm−2, 100–400 kV and 5×1012 Se++ cm−2, 350‐kV implants into (100) semi‐insulating GaAs have been studied. Peak carrier concentrations of 5×1018 cm−3 have been measured and mobilities >4000 cm2 V−1 s−1 obtained for low‐dose implants (n=1–2×1017 cm−3) by annealing samples on a graphite strip heater. Si3N4 and AlN have been used as encapsulants. Comparisons are made with capless annealing in an arsine ambient.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.U- Doping and impurity implantation
81.40.Rs Electrical and magnetic properties related to treatment conditions
85.30.Tv Field effect devices

Characterization of CdS/CdTe thin‐film solar cells by admittance spectroscopy and deep‐level transient spectroscopy

L. C. Isett

J. Appl. Phys. 56, 3508 (1984); http://dx.doi.org/10.1063/1.333917 (10 pages) | Cited 15 times

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Admittance spectroscopy, deep‐level transient spectroscopy, and deep‐level optical spectroscopy were used to characterize CdS/CdTe thin‐film solar cells prepared by close‐spaced sublimation. These devices are n+/p‐type hetero‐ (or shallow homo‐) junctions, and deep levels in the p‐CdTe layer are observed. The energy levels within the band gap can be divided into three groups. The first group consists of the shallow (<0.1 eV from the band edge) acceptors and donors, observed in electrical characterization only as the net carrier concentration. A band of midgap levels with activation energies of 0.6–0.8 eV in deep‐level transient spectroscopy is observed. The emission rates and activation energies for these levels agree with deep donor levels found in n‐type CdTe. A third band of levels is found with activation energies of 0.28–0.45 eV in admittance spectroscopy. These levels are seen in deep‐level optical spectroscopy and also in deep‐level transient spectroscopy, provided that a large forward‐bias pulse is used to fill the level. The emission rates in the third band agree with donor levels observed in n‐CdTe. Estimates of concentrations suggest that the concentration of the group two defects (midgap donors) is ∼0.8 of the net shallow acceptor concentration.
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84.60.Jt Photoelectric conversion
81.40.Rs Electrical and magnetic properties related to treatment conditions
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Near band‐gap photoluminescence from sulfur‐doped silicon samples

J. Weber and C. Holm

J. Appl. Phys. 56, 3518 (1984); http://dx.doi.org/10.1063/1.333918 (3 pages)

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Photoluminescence measurements in sulfur‐doped silicon samples reveal new luminescence lines at 1.1439 eV (S1), 1.1150 eV (S2), and 1.0858 eV (S1TO). [S1TO is the transverse optical (TO) phonon replica of the S1 line.] The sharp luminescence lines result from the recombination of excitons bound to two different centers. The S1 line was found to have a thermal ionization energy of 12.0 meV, which corresponds directly to the spectroscopically determined binding energy of the bound exciton. A correlation of the binding centers with the sulfur donor levels is suggested.
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78.40.Fy Semiconductors
71.35.-y Excitons and related phenomena
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