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1 Dec 1983

Volume 54, Issue 12, pp. 6811-7206

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Dry oxidation of silicon: A new model of growth including relaxation of stress by viscous flow

A. Fargeix and G. Ghibaudo

J. Appl. Phys. 54, 7153 (1983); http://dx.doi.org/10.1063/1.331986 (6 pages) | Cited 57 times

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This paper deals with a model of silicon oxidation including stress relaxation by viscous flow during growth. Based on a Deal–Grove process and a Maxwellian stress relaxation approach, an integrodifferential equation giving the inverse growth rate dt/deox vs eox is established. Valid in any case of thickness growth rate dependence, it allows us to fit dry silicon oxidation data on a wide range of oxidation temperature (780–980 °C).
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81.65.-b Surface treatments
68.55.-a Thin film structure and morphology
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

The effect of piezoelectrically coupled stresses on the junction characteristics of CdS‐Cu2S solar cells

Murray S. Bennett and John J. Kramer

J. Appl. Phys. 54, 7159 (1983); http://dx.doi.org/10.1063/1.331987 (7 pages) | Cited 2 times

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An investigation was conducted to determine the effects of piezoelectrically coupled stresses on the capacitance, open‐circuit voltage, short‐circuit current and I‐V characteristics of CdS‐Cu2S solar cells. The theoretical analysis suggests that only nonuniform stresses will result in changes in the open‐circuit voltage and capacitance. This was consistent with measurements made under uniform and nonuniform stress. Furthermore the direction of the change was consistent with that expected for junctions formed on the polar S face or the Cd face. The short‐circuit current and the I–V characteristics are, however, sensitive to both uniform and nonuniform stress but insensitive to the polar face on which the cell is formed. This suggests a nonpiezoelectric stress effect for these characteristics. The measurements were made at relatively low levels of stress (∼2 to 4×107 N/m2) and stress gradients (∼2×1010 N/m3). Under these conditions the measured changes are 1% or less. Thus the built‐in stresses resulting from cell manufacture are not expected to have a significant effect on cell properties unless they are at least an order of magnitude larger.
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84.60.Jt Photoelectric conversion
72.80.Ey III-V and II-VI semiconductors
77.65.-j Piezoelectricity and electromechanical effects
85.30.Hi Surface barrier, boundary, and point contact devices

The maximum efficiency of solar energy conversion devices

J. William Byrd and Carl G. Adler

J. Appl. Phys. 54, 7166 (1983); http://dx.doi.org/10.1063/1.331988 (4 pages) | Cited 1 time

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The production of work by devices receiving radiant energy and interacting with a local environment is discussed. Provision is made for the device to radiate at a temperature different from the local environmental temperature. The resulting conversion efficiency is discussed in terms of the radiant source, emitting and environmental temperatures. The environment is seen to play a pivotal role in the production of work. Extrema in the efficiency function are examined and no true maxima are found to exist. However, there are optimum choices for the emitter temperature if we hold the environmental temperature constant, and conversely. A case is demonstrated for which the device may absorb an amount of heat from the environment and perform an equal amount of work.
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84.60.Jt Photoelectric conversion
84.60.Rb Thermoelectric, electrogasdynamic and other direct energy conversion
89.30.-g Fossil fuels and nuclear power

Ablation of electrode surfaces in high power diodes

P. Sincerny, C. Gilman, R. Stringfield, M. Friedman, and A. Wilson

J. Appl. Phys. 54, 7170 (1983); http://dx.doi.org/10.1063/1.331989 (6 pages) | Cited 2 times

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The ablation of electrode surfaces has been observed for several materials illuminated by radiation from an imploding wire array. The experiments were done on the PITHON 5‐TW generator. A plasma boundary at ne=5×1018/cm3 expands at velocities up to 10 cm/μs from the surface. Calculations suggest early vacuum‐ultraviolet radiation ablates the electrode surface. Hydrogen is the dominant element forming a coating on the electrode surface.
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84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
84.40.Az Waveguides, transmission lines, striplines
52.40.Hf Plasma-material interactions; boundary layer effects
52.50.Lp Plasma production and heating by shock waves and compression

Modeling of thin film solar cells: Uniform field approximation

Richard S. Crandall

J. Appl. Phys. 54, 7176 (1983); http://dx.doi.org/10.1063/1.331955 (11 pages) | Cited 62 times

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A model of a p‐i‐n thin‐film solar cell is presented that can be easily used to analyze solar cell properties. The continuity equations are solved using the regional approximation, producing elementary solutions that give insight into the physics of the transport in the cell. The steady‐state solutions are compared with measurements on typical hydrogenated amorphous silicon, a‐Si:H, solar cells. The ac solutions are used to explain a new source of photocapacitance due to mobile carriers.
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85.30.De Semiconductor-device characterization, design, and modeling
84.60.Jt Photoelectric conversion
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Metalorganic chemical vapor deposition of undoped In1−xAlxAs on InP

M. A. di Forte‐Poisson, M. Razeghi, and J. P. Duchemin

J. Appl. Phys. 54, 7187 (1983); http://dx.doi.org/10.1063/1.331956 (3 pages) | Cited 5 times

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In1−x Alx As epitaxial layers were grown on (100) InP substrates by the organometallic vapor phase epitaxy method. Undoped layers with mirror smooth surfaces were obtained for substrate temperatures of 600–650 °C. By adjusting the relative ratio of In and Al, lattice matched In0.52 Al0.48 As epilayers were reproducibly grown on InP substrates. X‐ray measurements, scanning Auger analyses, and electron mobilities are presented. These results show that the quality of the epilayers obtained here was comparable to the best reported layers grown by other methods.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Wavelength modification (Δℏω=10–40 meV) of room temperature continuous quantum‐well heterostructure laser diodes by thermal annealing

K. Meehan, N. Holonyak, R. D. Burnham, T. L. Paoli, and W. Streifer

J. Appl. Phys. 54, 7190 (1983); http://dx.doi.org/10.1063/1.331957 (2 pages) | Cited 11 times

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Data are presented showing that wavelength modification, of at least 210 Å (from 8180 to 7970 Å), of broad area room temperature pulsed quantum well heterostructure (QWH) laser diodes is possible by thermal annealing. Thermal annealing at 900 °C for 8 h results in only a minor change in the threshold current density, 385–425 A/cm2, thus making possible similar wavelength modification (8180–8080 Å) of continuous (cw) 300 K stripe‐geometry QWH laser diodes.
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42.55.Px Semiconductor lasers; laser diodes
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.40.Tv Optical and dielectric properties related to treatment conditions
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Circuit effects on Pierce instabilities

M. A. Raadu and M. B. Silevitch

J. Appl. Phys. 54, 7192 (1983); http://dx.doi.org/10.1063/1.331958 (3 pages) | Cited 4 times

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The role of the Pierce instability in the formation of double layers is considered and compared with that of the Buneman instability. Pierce instabilities have been identified in a double‐layer experiment, where they lead to ion trapping. Here the effects of external circuit elements are considered. In the case of immobile ions the onset criteria are unaffected, but in the unstable range the growth rate is reduced by the external impedance. Required experimental values of the circuit elements are estimated. The possible relevance to computer simulations is noted.
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52.40.Mj Particle beam interactions in plasmas
52.35.Py Macroinstabilities (hydromagnetic, e.g., kink, fire-hose, mirror, ballooning, tearing, trapped-particle, flute, Rayleigh-Taylor, etc.)

Atmospheric effects on projectile acceleration in the rail gun

John D. Powell and Jad H. Batteh

J. Appl. Phys. 54, 7195 (1983); http://dx.doi.org/10.1063/1.331959 (3 pages) | Cited 2 times

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The manner in which projectile velocity in a rail gun is limited by the presence of atmosphere in the gun tube is studied. In particular, we solve the equation of motion for the acceleration of the armature and projectile, accounting for both the decelerating force exerted by the atmosphere and the time decay of the current profile. From the solution, a characteristic time is derived which indicates quantitatively when the effect of the atmosphere can be expected to be significant. Results of the calculation are then compared qualitatively with results from two recent experiments: one in which atmospheric effects are nearly negligible and one in which they are not.
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52.75.Di Ion and plasma propulsion
45.05.+x General theory of classical mechanics of discrete systems
02.30.Hq Ordinary differential equations

Simple model to explain inhomogeneous structures in shocked solids

G. H. Vineyard

J. Appl. Phys. 54, 7198 (1983); http://dx.doi.org/10.1063/1.331960 (3 pages) | Cited 1 time

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A model is proposed to explain observations of inhomogeneous yielding in shocked solids. Instead of seeking hydrodynamic or elastic‐plastic instabilities in an initially homogeneous specimen, it is proposed that the material under shock conditions (at pressures well above the yield strength) may be characterized as a viscous medium with initially inhomogeneous viscosity. Such a viscosity might be caused by an inhomogeneous distribution of dislocations. Assuming that the viscosity also decreases with temperature in a simple way, suitably truncated hydrodynamic equations can be solved analytically and predict a tendency toward runaway of temperature and deformation in localized regions.
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62.50.-p High-pressure effects in solids and liquids
46.40.Cd Mechanical wave propagation (including diffraction, scattering, and dispersion)
46.40.Jj Aeroelasticity and hydroelasticity
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

Self‐developing UV photoresist using excimer laser exposure

T. F. Deutsch and M. W. Geis

J. Appl. Phys. 54, 7201 (1983); http://dx.doi.org/10.1063/1.331961 (4 pages) | Cited 60 times

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Nitrocellulose functions as a self‐developing photoresist which can be patterned using pulsed excimer laser radiation. The material exhibits a threshold fluence for ablation of 20 mJ/cm2 at a wavelength of 193 nm; this threshold results in higher contrast than can be obtained with most conventional photoresists. The effect of varying the laser wavelength has been examined. A simple model of ablative development has been used to predict the etch rate. The processing stability of the resist has been increased without changing the optical development rate by the addition of a dopant. The resolution of the resist is better than 0.3 μm.
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79.20.Ds Laser-beam impact phenomena
81.65.-b Surface treatments
82.50.-m Photochemistry
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Extended‐defect reduction by uniform heating for P+‐implanted Si wafers

Ryosaku Komatsu and Kenji Kajiyama

J. Appl. Phys. 54, 7205 (1983); http://dx.doi.org/10.1063/1.331962 (2 pages) | Cited 1 time

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P was implanted into 76‐mm‐diam (111) Si wafers at an energy of 40 keV with a dose of 2.54×1016/cm2. An increase in extended defects was found at a high insertion speed of wafer loading into a furnace at 1000–1100 °C in a N2 ambient. The increase was due to nonuniformity in the temperature history and resultant thermal stress in the wafer, though no slip line was observed. The temperature nonuniformity was monitored by thermal‐oxide thickness nonuniformity for heating in a dry‐O2 ambient. A low insertion speed resulted in uniform heating and reduced extended defects.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.Nn Stacking faults and other planar or extended defects
61.72.U- Doping and impurity implantation
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