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1 Dec 1983

Volume 54, Issue 12, pp. 6811-7206

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Interaction of a dislocation with a crack

A. Cemal Eringen

J. Appl. Phys. 54, 6811 (1983); http://dx.doi.org/10.1063/1.332001 (7 pages) | Cited 38 times

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A solution is given of the field equations of nonlocal elasticity for a line crack interacting with a screw dislocation in an elastic plane under antiplane shear loading. Displacement and stress fields are determined throughout the core region and beyond. In the case when the dislocation is absent, the circumferential stress is shown to vanish at the crack tip, increasing to a maximum along the crack line afterwards decreasing to its classical value at large distances from the crack tip. This is in contradiction with the classical elasticity solutions which predicts stress singularity at the crack tip and it is in accordance with the physical condition that the crack tip surface must be free of surface tractions. The presence of the dislocation alters the stress distribution considerably when it is close to the crack tip. The stress distributions in the core region are displayed. A fracture criterion based on the maximum stress is established and used to determine the theoretical strengths of pure crystals that contain a line crack. Results are in good agreement with those based on the atomic theories and experiments.
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46.25.Cc Theoretical studies
81.40.Jj Elasticity and anelasticity, stress-strain relations
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
61.72.Lk Linear defects: dislocations, disclinations

Determination of N2(B3πg) and N2(C3πu) vibrational temperatures in e‐beam pumped Ar‐N2 and He‐Ar‐N2 mixtures

P. Polak‐Dingels and N. Djeu

J. Appl. Phys. 54, 6818 (1983); http://dx.doi.org/10.1063/1.332002 (4 pages) | Cited 2 times

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We report the results of a study to determine the vibrational temperatures of N2(B3πg) and N2(C3πu) in e‐beam pumped N2 rare‐gas mixtures. They are analyzed in terms of the kinetics of the e‐beam pumped gas mixtures, and a number of qualitative conclusions are reached.
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34.80.Gs Molecular excitation and ionization
31.50.Df Potential energy surfaces for excited electronic states
51.70.+f Optical and dielectric properties
33.50.Dq Fluorescence and phosphorescence spectra

Fourier–Bessel representation of periodic electrostatic systems of juxtaposed coaxial cylinders separated by finite gaps

J. P. van der Merwe

J. Appl. Phys. 54, 6822 (1983); http://dx.doi.org/10.1063/1.332003 (6 pages)

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An iterative procedure is described by means of which the potential distribution can be found in axially symmetrical periodic configurations of juxtaposed coaxial electrodes. The solution is in the form of Fourier–Bessel series, and the procedure involves the potential calculation in the gap by an overrelaxation process in respect of points located on a mesh covering a small region which includes a cross section of the gap. The gap potential is represented either by a polynomial or by the sum of a linear function and a Fourier series. Using this method, the errors on axial potentials are found to be approximately two orders of magnitude smaller than those on potentials calculated by assuming that the potential in a gap is a linear function. Compared to the relaxation method, the present procedure represents a considerable saving on computing time and memory.
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41.20.Cv Electrostatics; Poisson and Laplace equations, boundary-value problems
41.20.Gz Magnetostatics; magnetic shielding, magnetic induction, boundary-value problems
02.60.Jh Numerical differentiation and integration
02.70.-c Computational techniques; simulations

Amplification of Bleustein–Gulyaev waves in cadmium sulfide

P. Palanichamy and S. P. Singh

J. Appl. Phys. 54, 6828 (1983); http://dx.doi.org/10.1063/1.332004 (6 pages)

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The propagation of Bleustein–Gulyaev waves in the presence of a dc electric field in the vacuum baked piezoelectric semiconducting crystals of class 6 has been studied theoretically. By solving the partial differential equations representing the electron–acoustic wave interaction in the piezoelectric semiconducting region, and the Laplace’s equation in the vacuum region separately and fulfilling the relevant boundary conditions, we obtain an expression for the amplification coefficient. The effects of carrier diffusion, resistivity, and carrier drift velocity on the amplification coefficient have been studied based on numerical calculations for the semiconducting CdS sample. It has been observed that, compared to Rayleigh waves, the Bleustein–Gulyaev waves give a much higher amplification.
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43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
72.50.+b Acoustoelectric effects
73.50.Rb Acoustoelectric and magnetoacoustic effects
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics
43.35.Pt Surface waves in solids and liquids

Measurements with an optimized regenerator for a liquid‐working‐substance heat engine

G. W. Swift, A. Migliori, and John Wheatley

J. Appl. Phys. 54, 6834 (1983); http://dx.doi.org/10.1063/1.332005 (7 pages) | Cited 2 times

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A regenerator for use with a liquid in a Stirling cycle heat engine is described. Because of the thermophysical characteristics of liquids, such a regenerator can be nearly ideally effective and has thermal properties that can be calculated directly without resort to empirical information. The regenerator described here is designed to minimize loss arising from three sources: thermal conductivity along the regenerator, viscous heating in the working fluid, and imperfect thermal contact between the working fluid and the second thermodynamic medium in the regenerator. Measurements using liquid propylene as a test fluid in the regenerator confirm the design calculations.
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44.10.+i Heat conduction
47.27.T- Turbulent transport processes
47.60.-i Flow phenomena in quasi-one-dimensional systems
65.90.+i Other topics in thermal properties of condensed matter (restricted to new topics in section 65)

The current‐voltage characteristic of magnetron sputtering systems

W. D. Westwood, S. Maniv, and P. J. Scanlon

J. Appl. Phys. 54, 6841 (1983); http://dx.doi.org/10.1063/1.332006 (6 pages) | Cited 22 times

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The I‐V characteristic of dc and rf magnetron sputtering systems has been shown to fit an expression of the form I=β(V−V0)2, where V0 is the minimum voltage necessary to maintain a discharge. New experimental data is presented for a dc planar magnetron with Al, Cd2Sn, Cr, and CdSe targets in argon discharges and for a dc Research S‐gun with an Al target in argon and argon/oxygen discharges. Literature data for planar, S‐gun, and cylindrical magnetrons has also been shown to fit the above expression; for rf magnetrons, I is the rms current and V is the target self‐bias voltage. V0 decreases from about 400 V at 0.1 Pa to 250 V at 1 Pa and then decreases at higher pressures. β increases from about 50 to ≤300 A/kV2 as the pressure increases from 0.1 to 10 Pa. The actual values of V0 and β depend on the system, target, and sputtering gas. It is shown that the I∝V2 dependence is due to a space‐charge‐limited electron current in the magnetron geometry which reduces the electron mobility by several orders of magnitude from the zero magnetic field value; the mobility ratio depends on the electron‐atom collision frequency.
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51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)
52.80.Dy Low-field and Townsend discharges
81.15.Cd Deposition by sputtering

The effect of stress relief on magnetic distributions in ion‐implanted garnet films

S. Shiomi and C. C. Shir

J. Appl. Phys. 54, 6847 (1983); http://dx.doi.org/10.1063/1.332007 (6 pages) | Cited 2 times

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Magnetization distributions around a circular nonimplanted disk in an ion‐implanted garnet film are calculated through numerical integration of the Landau–Lifshitz–Gilbert equation. In addition to uniform stress‐induced in‐plane anisotropy in the implanted region, the effect of stress relief near the edge of nonimplanted disk is taken into account. Calculation results show that magnetization distributions are strongly affected by the stress distribution near the edge not only in the region close to the implantation edge where charged walls are formed but also in the region rather far away from the edge. With proper choice of stress distribution, the present calculation can reproduce the ‘‘propeller‐like’’ domain wall pattern which is experimentally observed by the Bitter technique. This suggests that the stress distribution near the implantation edge might be determined by comparing calculation results of magnetization distributions with experimental observations of domain wall pattern.
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52.80.Dy Low-field and Townsend discharges
51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)

Growth and defect chemistry of amorphous hydrogenated silicon

Bruce A. Scott, Jeffrey A. Reimer, and Paul A. Longeway

J. Appl. Phys. 54, 6853 (1983); http://dx.doi.org/10.1063/1.332008 (11 pages) | Cited 52 times

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Magnetic resonance (NMR,EPR) and infrared studies are presented of amorphous hydrogenated silicon (a‐Si:H) films prepared by homogeneous chemical vapor deposition (HOMOCVD) and rf plasma decomposition using silane and disilane. Hydrogen incorporation occurs with a small activation energy (∼0.06 eV) for all films, while the barrier for changes in spin defect density is almost an order of magnitude larger and comparable to that measured in defect annealing studies. Films deposited by rf(Si2H6) plasma exhibit the greatest hydrogen contents, followed by HOMOCVD and rf(SiH4) plasma material. NMR measurements suggest that HOMOCVD films are less disordered than plasma‐deposited a‐Si:H. Previous work and recent kinetic studies of plasma and thermal environments are extensively analyzed, along with thermodynamic and kinetic data, to determine a a‐Si:H growth mechanisms most consistent with the experimental results. The model presented to explain compositional and defect changes with substrate temperature emphasizes plasma deposition by monoradical precursors and HOMOCVD growth by diradicals, resulting initially in a similar surface‐bound intermediate in all cases. Plasma growth from Si2H6 involves the surface attachment of longer radical chains, compared to SiH4, while oligomeric diradicals could be present in HOMOCVD. The possibility that reactions at the hot reactor wall, as well as in the gas, create monoradicals in HOMOCVD is also explored in detail. Finally, film dehydrogenation and crosslinking reactions are examined, and experiments proposed to determine the channels most relevant for each deposition environment.
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61.05.Qr Magnetic resonance techniques; Mössbauer spectroscopy (for structure determination only)
61.72.-y Defects and impurities in crystals; microstructure
61.50.Nw Crystal stoichiometry
68.55.-a Thin film structure and morphology

Multiplexing of twisted nematic cells under nonrigid boundary conditions

K. H. Yang

J. Appl. Phys. 54, 6864 (1983); http://dx.doi.org/10.1063/1.331990 (4 pages) | Cited 11 times

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The possibility of increasing the degree of multiplexing of twisted nematic cells has been investigated by taking the following factors into consideration: unequal elastic constants and arbitrary dielectric anisotropy for the liquid crystal medium, and a general anisotropic interfacial potential. It can be shown that the achievable degree of multiplexing of twisted nematic cells under the nonrigid boundary condition can be improved by a factor of 10 to 50 over the case of the rigid boundary condition, in contradiction to a factor of two predicted by Nehring, Kmetz, and Scheffer [J. Appl. Phys. 47, 850 (1976)]. The effect on the degree of multiplexing by different forms of the anisotropic interfacial potential is also discussed.
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61.30.Cz Molecular and microscopic models and theories of liquid crystal structure
77.90.+k Other topics in dielectrics, piezoelectrics, and ferroelectrics and their properties (restricted to new topics in section 77)

Redistribution of chromium under annealed sulfur implants into chromium‐doped GaAs

R. G. Wilson, C. A. Evans, J. C Norberg, C. G. Hopkins, and Y. S. Park

J. Appl. Phys. 54, 6868 (1983); http://dx.doi.org/10.1063/1.331991 (7 pages) | Cited 5 times

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The effect of sulfur implant fluence, ion energy, and annealing temperature on the redistribution accumulation of chromium during annealing of GaAs under SiO2 and Si3N4 caps and a capless condition is shown. The variation of the thickness of the heavily damaged or ‘‘amorphized’’ layer with implant fluence is shown and discussed. Three peaks are seen in the Cr accumulation profiles. When their integrated densities are plotted versus inverse annealing temperature, two peaks exhibit an activation energy for breakup of the Cr‐defect complexes of 0.56 eV, and the third, of 1.8 eV. The nature or origin of these Cr‐defect complexes is discussed. Sulfur migration or ‘‘diffusion’’ versus sulfur density is illustrated and discussed. The correlations of the two Cr peaks observed in 840 °C annealed depth distributions with capping environment and damage depth are discussed. Finally, these Cr accumulation profiles under sulfur implants are compared with those in self‐amorphized GaAs.
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61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
66.30.J- Diffusion of impurities
07.90.+c Other topics in instruments, apparatus, and components common to several branches of physics and astronomy (restricted to new topics in section 07)

Formation of partially coherent antimony precipitates in ion implanted thermally annealed silicon

S. J. Pennycook, J. Narayan, and O. W. Holland

J. Appl. Phys. 54, 6875 (1983); http://dx.doi.org/10.1063/1.331992 (4 pages) | Cited 9 times

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Thermal annealing of a supersaturated solid solution of antimony in silicon results in the formation of partially coherent antimony precipitates. Transmission electron microscopy and microdiffraction studies show the precipitates to be bounded by {112} Si surfaces with the {111} Si and {1012} Sb planes coherent across the interface. The role of dislocations in the growth of the precipitates is discussed.
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61.72.U- Doping and impurity implantation
66.30.J- Diffusion of impurities
81.30.Mh Solid-phase precipitation
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Boron, fluorine, and carrier profiles for B and BF2 implants into crystalline and amorphous Si

R. G. Wilson

J. Appl. Phys. 54, 6879 (1983); http://dx.doi.org/10.1063/1.331993 (11 pages) | Cited 92 times

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Depth distributions, measured by secondary ion mass spectrometry (SIMS), and carrier profiles, measured by differential capacitance‐voltage (C‐V) profiling, of boron and fluorine implanted as B, F, BF, or BF2 ions into random and channeling orientations of crystalline silicon, and into silicon amorphized by silicon ion implantation are reported. Low boron energies of 8 and 10 keV and the corresponding energies of 36 and 45 keV for BF2 ions are emphasized because of their use for high resolution device and circuit applications in silicon and silicon‐on‐sapphire. Amorphizing crystalline silicon prior to boron implantation eliminates the significant channeling tails on 8‐ or 10‐keV boron profiles. Fluorine penetrates more deeply into crystalline silicon than boron does. Both boron and fluorine redistribute during annealing at 925 °C/20 min for B, F, BF, or BF2 implants, but with quite different characteristics as illustrated, and depend on the implantation fluence (5×1014 and 2×1015 cm−2 reported here). The fluorine redistribution profiles are strongly influenced by the magnitude and distribution of damage that remains after annealing. Fair agreement is shown between boron atom depth distributions measured by SIMS and C‐V electrical profiles measured for a fluence of 1.5×1012 cm−2. Differential C‐V profiles indicate that the entire ion spectrum from BF3 can be implanted and electrically activated (for a fluence of 1.5×1012 cm−2), as can a BF2 implant. Implantation through a 20‐nm layer of SiO2 has no significant effect on the boron depth distribution in crystalline silicon. Pearson IV moments are given for the low energy boron profiles. The use of these profiles for modeling calculations is discussed. The suprem model of an exponential for the channeling tail of boron implants in crystalline silicon is fairly good for fluences greater than about 1015 cm−2, but poorer for lower fluences, but the slope and matching to the random portion of the profiles are difficult to predict. In order for modeling calculations to reasonably represent boron profiles, either the silicon substrate should be amorphized prior to boron implantation, or the modeling should be modified to use experimental data measured for the implant and silicon conditions.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
66.30.J- Diffusion of impurities
61.72.U- Doping and impurity implantation

Dislocation relaxation peaks involving hydrogen drag in deformed Ni‐H alloys

K. Tanaka, T. Inukai, K. Uchida, and M. Yamada

J. Appl. Phys. 54, 6890 (1983); http://dx.doi.org/10.1063/1.331994 (7 pages) | Cited 4 times

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The internal friction and modulus changes in pure and hydrogenated nickel are measured after plastic deformation at frequencies of 2 Hz and 30 kHz. The hydrogen dissolution strongly diminishes a Bordoni‐type peak (B peak) but develops a Snoek–Köster‐type peak (SK peak) at a temperature well above the B peak. The SK peak increases in height and shifts toward higher temperature with increasing hydrogen concentration up to 1600 at. ppm. It has an effective activation enthalpy of 0.50±0.05 eV. An analysis of the concentration dependence of the peak shift suggests that this peak is caused by dislocations dragging pairs of hydrogen atoms, rather than isolated ones, segregated in the vicinity of the dislocations. A simple model is proposed which involves both dislocation pinning and impurity drag with changes in temperature. It explains well the observed correlation between the B peak and the SK peak as well as the conservation of their total relaxation strength with changes in the hydrogen concentration.
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62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)

High pressure structural phase transition in AgGaTe2

S. B. Qadri, Z. Rek, A. W. Webb, E. F. Skelton, and S. A. Wolf

J. Appl. Phys. 54, 6897 (1983); http://dx.doi.org/10.1063/1.331995 (3 pages) | Cited 3 times

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From in situ diffraction measurements of synchrotron produced x radiation, we have found that AgGaTe2 transforms from the tetragonal, chalcopyrite structure to a face‐centered cubic structure at 4.0±0.5 GPa. The resistivity shows a minimum near this pressure, but the material retains its semiconducting nature.
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64.70.K- Solid-solid transitions
62.50.-p High-pressure effects in solids and liquids
61.66.Fn Inorganic compounds

The first‐order phase transformation in NaCN: A martensite transformation

Philip W. Gash

J. Appl. Phys. 54, 6900 (1983); http://dx.doi.org/10.1063/1.331996 (7 pages) | Cited 13 times

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The first‐order phase transformation in NaCN at 288 °K is identified as a martensite transformation accompanied by the formation of mechanical deformation twins of the first kind. Photomicroscopy measurements of the crystal surface morphology and nuclear magnetic resonance measurements of the domain orientation are in agreement with the predictions of the Weschsler, Lieberman, and Read theory of twin formation accompanying a martensite transformation. There are 24 domains; the group S2 leaves a domain invariant and the domain generating group of F operations is either O or Td. NaCN is identified as belonging to the ferroelastic species m3mF1.
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64.70.K- Solid-solid transitions
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations
64.60.Cn Order-disorder transformations
77.80.Dj Domain structure; hysteresis

Exchange striction of ferromagnetic solid solution of (Mn1−xTax)3B4

T. Ishii, M. Shimada, and M. Koizumi

J. Appl. Phys. 54, 6907 (1983); http://dx.doi.org/10.1063/1.331997 (5 pages) | Cited 1 time

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The thermal expansion of a ferromagnetic solid solution of (Mn1−xTax)3B4 was determined using a high temperature x‐ray powder diffraction technique in the temperature range 300–973 K. From the thermal expansion curve, the values of the exchange striction along three axes were deduced. They were negative along both a and b axes, but the thermal expansion of the c axis was very small and exchange striction was not observed. It was considered that such an anisotropy in the thermal expansion of the present sample was due to the crystallographic structure of Ta3B4. The pressure dependence of the Curie temperature of (Mn0.8Ta0.2)3B4 was determined to be 0.77 deg/kbar from electrical resistivity measurements under high pressure. The observed value of dTc/dp is in good agreement with the value calculated using the molecular theory proposed by Bean and Rodbell.
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65.40.De Thermal expansion; thermomechanical effects
75.80.+q Magnetomechanical effects, magnetostriction
75.50.Dd Nonmetallic ferromagnetic materials
75.30.Et Exchange and superexchange interactions

On models of phosphorus diffusion in silicon

S. M. Hu, P. Fahey, and R. W. Dutton

J. Appl. Phys. 54, 6912 (1983); http://dx.doi.org/10.1063/1.331998 (11 pages) | Cited 64 times

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Various phenomena associated with phosphorus diffusion in silicon are reviewed and prominent models are critiqued. It is shown that these models are either fundamentally unsound, or are inconsistent with observed phenomena. A consistent model is proposed in which two mechanisms are operating simultaneously, namely, the vacancy mechanism for the slower diffusing component, and the interstitialcy mechanism for the faster diffusing component. It is assumed that phosphorus exists in silicon in both the substitutional and the interstitialcy species, and that both are shallow donors. The conversion between the two species is relatively slow, giving rise to the so‐called kinked concentration profile. Diffusion via a partial interstitialcy mechanism leads to a supersaturation of self‐interstitials.
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66.30.J- Diffusion of impurities
61.72.jd Vacancies
61.72.jj Interstitials
61.72.Nn Stacking faults and other planar or extended defects
66.30.Lw Diffusion of other defects

Interdiffusion in copper–aluminum thin film bilayers. I. Structure and kinetics of sequential compound formation

H. T. G. Hentzell, R. D. Thompson, and K. N. Tu

J. Appl. Phys. 54, 6923 (1983); http://dx.doi.org/10.1063/1.331999 (6 pages) | Cited 19 times

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Interdiffusion in Cu–Al thin film bilayers at temperatures between 160 and 300 °C has been studied by a combination of glancing‐incidence x‐ray diffraction, Rutherford backscattering spectroscopy, and transmission electron diffraction and microscopy. A sequential intermetallic compound formation was observed in samples with an excess amount of Cu with θ‐CuAl2 forming first, followed by η2‐CuAl, and γ2‐Cu9Al4. In samples with excess Al, the θ‐CuAl2 is the first and the last phase formed. The thickening of these compounds was found to obey a parabolic relationship with time, and especially the thickening of θ‐CuAl2 can be described by a prefactor of 7.4 cm2/s and an activation energy of 1.31 eV.
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66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
61.05.C- X-ray diffraction and scattering
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Interdiffusion in copper–aluminum thin film bilayers. II. Analysis of marker motion during sequential compound formation

H. T. G. Hentzell and K. N. Tu

J. Appl. Phys. 54, 6929 (1983); http://dx.doi.org/10.1063/1.332000 (9 pages) | Cited 8 times

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Isolated W islands, 150 Å in diameter, have been deposited between Cu and Al thin film bilayers to serve as inert diffusion markers. Marker displacements have been measured consecutively by Rutherford backscattering spectroscopy during the sequential growth of CuAl2, CuAl, and Cu9Al4 intermetallic compounds upon annealing in the temperature range 160–250 °C. The intrinsic interdiffusion coefficients of Al and Cu in each of these compounds have been determined by applying an analysis of marker motion in a binary diffusion couple to the measured displacement data. Moreover, the prefactor and activation energy of the individual diffusivities have been calculated as shown below by measuring the marker motion as a function of temperature. For CuAl2, D0Al =0.4 cm2/s, QAl =1.25±0.05 eV, D0Cu =9.5 cm2/s, QCu =1.40±0.05 eV. For CuAl, D0Al =1.5×10−7 cm2/s, QAl =0.7±0.05 eV, D0Cu =1×10−2 cm2/s, QCu =1.1±0.05 eV. For Cu9Al4, D0Al =1.7×10−3 cm2/s, QAl =1.20±0.05 eV, D0Cu =2.4×10−2 cm2/s, QCu =1.30±0.05 eV. These values agree quite well to those chemical interdiffusion coefficients published in the literature for bulk samples. A discussion on sequential compound formation has been given on the basis of these measured values.
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66.30.Ny Chemical interdiffusion; diffusion barriers
66.30.H- Self-diffusion and ionic conduction in nonmetals
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Hydrogen migration under avalanche injection of electrons in Si metal‐oxide‐semiconductor capacitors

R. Gale, F. J. Feigl, C. W. Magee, and D. R. Young

J. Appl. Phys. 54, 6938 (1983); http://dx.doi.org/10.1063/1.332009 (5 pages) | Cited 82 times

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Aluminum/silicon dioxide/silicon capacitors in which the oxide has been grown thermally under ultra‐dry (≲1 ppm H2O) conditions and subsequently treated by low temperature water diffusion have been characterized electrically and chemically. Avalanche injection of electrons has been observed to produce the complex charging behavior previously observed in similar systems, which includes electron trapping and interface positive charge generation. Secondary ion mass spectrometry depth profiling of these structures has shown that electron injection also results in hydrogen transport. This is the first direct observation of hydrogen redistribution under the influence of an electron current. We demonstrate a linear relationship between injected charge fluence and areal density of hydrogen localized at the SiO2/Si interface. These results indicate that hydrogen release correlates with interface state generation, but not with bulk oxide trapping.
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66.30.J- Diffusion of impurities
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators

High temperature stability of PtSi formed by reaction of metal with silicon or by cosputtering

S. P. Murarka, E. Kinsbron, D. B. Fraser, J. M. Andrews, and E. J. Lloyd

J. Appl. Phys. 54, 6943 (1983); http://dx.doi.org/10.1063/1.332010 (9 pages) | Cited 16 times

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High temperature stability of platinum silicide, formed by reacting metal with silicon or by cosputtering metal and silicon in a desired ratio, has been studied. The properties of films, thus formed, were examined as a function of annealing temperature using a resistance measuring technique, Rutherford backscattering, Auger and x‐ray analyses, transmission and scanning electron microscopic techniques, and by measuring forward current‐voltge (I‐V) characteristics of the silicide n‐silicon Schottky diodes. It is shown that cosputtering silicon rich alloys prevents agglomeration of the silicide, but increases the resistivity and decreases the Schottky barrier height of the film. Platinum silicide dissolves increasing amounts of silicon on high temperature (700–1000 °C) treatments causing considerable degradation of properties. Although cosputtering silicon rich alloys reduces this behavior, electrical properties such as forward I‐V characteristics still degrade due to high temperature anneals.
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68.60.-p Physical properties of thin films, nonelectronic
81.40.Rs Electrical and magnetic properties related to treatment conditions
73.30.+y Surface double layers, Schottky barriers, and work functions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Electron microscope studies of an alloyed Au/Ni/Au‐Ge ohmic contact to GaAs

T. S. Kuan, P. E. Batson, T. N. Jackson, H. Rupprecht, and E. L. Wilkie

J. Appl. Phys. 54, 6952 (1983); http://dx.doi.org/10.1063/1.332011 (6 pages) | Cited 125 times

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The interface structures resulting from the alloying reactions between a Au/Ni/Au‐Ge composite film and a (100) GaAs substrate were studied by transmission electron microscopy and scanning transmission electron microscopy. Electron microscope examinations of the cross‐sectional samples prepared in this study offered excellent lateral and depth resolution of local structures which are not available by other analytical techniques used previously in similar studies. The distributions and chemical compositions of various phases formed, and the morphologies of the interfaces between these phases were monitored and compared with the measured contact resistances at three different stages of alloying. A correlation between the interface structure and the contact resistance was found.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
73.40.Cg Contact resistance, contact potential
73.40.Ns Metal-nonmetal contacts

Molecular beam epitaxial growth of InGaAlP visible laser diodes operating at 0.66–0.68 μm at room temperatures

H. Asahi, Y. Kawamura, and H. Nagai

J. Appl. Phys. 54, 6958 (1983); http://dx.doi.org/10.1063/1.332012 (7 pages) | Cited 41 times

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The room temperature pulsed operation of In0.49Ga0.31Al0.20P/In0.49Ga0.51−x AlxP/In0.49Ga0.31Al0.20P(x=0.00–0.03) double heterostructure (DH) laser diodes have been achieved for the first time. The lasing wavelength was 0.66–0.68 μm with a threshold current density of 2.6–3.6×104A/cm2 at 26 °C. These results were achieved by growing DH wafers by molecular beam epitaxy (MBE). Key points in the successful MBE growth of these DH wafers were, first, the realization of low resistance p‐type and n‐type InGaAlP layers by reducing contamination in the growth chamber. This was done by installing a substrate loading room with an interlock valve and a substrate transfer mechanism. The second was the realization of an abrupt p‐n junction by the use of Si instead of Sn as an n‐type dopant.
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68.55.-a Thin film structure and morphology
42.55.Px Semiconductor lasers; laser diodes
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Photoluminescence in GaAs doping superlattices

Helmut Jung, Harald Künzel, Gottfried H. Döhler, and Klaus Ploog

J. Appl. Phys. 54, 6965 (1983); http://dx.doi.org/10.1063/1.332013 (9 pages) | Cited 13 times

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The influence of excitation density and excitation energy on the low‐temperature photoluminescence spectra of GaAs doping superlattices has been studied in detail. In addition to the strongly tunable luminescence across the indirect gap in real space, which is the specific recombination process in doping superlattices, luminescence lines near the band gap of bulk GaAs, originating from vertical electron‐hole recombination processes, are observed. The relative intensities of these vertical luminescence transitions increase at excitation energies close to the bulk band gap and also at high excitation densities. We explain this increase by a simple model based on the classical evaluation of the relaxation kinetics of photoexcited carriers in momentum and real space. The significant result of our investigation is the observation that the luminescence efficiency in GaAs doping superlattices remains constant if the excitation density is varied. Consequently, the relative weight of nonradiative recombination processes is not increasing if the recombination lifetimes are enhanced by several orders of magnitude by lowering the value of the effective gap.
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68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
78.40.Fy Semiconductors

Doping and electrical properties of Mn in In1−x−yGaxAlyAs grown by molecular beam epitaxy

E. Silberg, T. Y. Chang, A. A. Ballman, and E. A. Caridi

J. Appl. Phys. 54, 6974 (1983); http://dx.doi.org/10.1063/1.332014 (8 pages) | Cited 1 time

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Epitaxial layers of p‐type In1−x−yGaxAlyAs doped with Mn were grown by molecular beam epitaxy. The doping characteristics and electrical properties are studied using Hall measurements in the temperature range between 100 and 300 K. Secondary ion mass spectrometry (SIMS) was used to study Mn profiles and diffusion coefficients. The maximum hole concentration attainable at room temperature is relatively independent of the As flux and is found to decrease from 4×1018 for y=0 to 2×1016 cm−3 for y=0.48. The experimental results of the resistivity and Hall effect are used to determine the densities Na, Nd of acceptors and compensating donors and the activation energy. The acceptor activation energy Ea increases from 50 at y=0 to 200 meV at y=0.23. Ea is found to be independent of the hole concentration and the arsenic flux used during the molecular beam epitaxial growth. The hole mobility for hole concentration of ∼1017 cm−3 is about 140 cm2 V−1 s−1 and decreases with increasing y. SIMS measurements of the Mn profiles show that Mn diffusion is significant at temperatures 650 °C and above, but is insignificant under the growth condition at 493 °C. Abrupt junction and sharp Mn pulses (<0.15 μm wide) have been obtained. Mn surface segregation is negligible at growth temperatures above 500 °C.
Show PACS
68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
78.40.Fy Semiconductors
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