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Journal of Applied Physics / Volume 50 / Issue 8

J. Appl. Phys. 50, 5348 (1979); http://dx.doi.org/10.1063/1.326634 (4 pages)

Influence of a magnetic field on 1/f noise in ambipolar semiconductors: Evidence of its surface origin

T. Dilmi, A. Chovet, and P. Viktorovitch

Laboratoire de Physique des Composants à Semiconducteurs—ERA CNRS No. 659, Institut National Polytechnique, Enserg, 23, rue des Martyrs 38031 Grenoble Cedex, France

The influence of a transverse magnetic field on the electrical noise in ambipolar semiconductors (like intrinsic and near‐intrinsic germanium) is investigated as a function of surface treatment. When the transport of carriers across the sample is governed by the magnetoconcentration effect, it is shown that the very large increase of the 1/f noise is due to 1/f fluctuations of surface recombination velocities. Such fluctuations (which furthermore are proportional to the surface recombination velocity) also account for the most part of the highest frequency noise (beyond the inverse of the carrier effective lifetime).

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KEYWORDS and PACS

Keywords

SEMICONDUCTORS, NOISE, MAGNETIC FIELDS, SURFACES, DATA, GERMANIUM, CHARGE CARRIERS, FLUCTUATIONS, LIFETIME

PACS

  • 72.70.+m

    Noise processes and phenomena

  • 72.20.-i

    Conductivity phenomena in semiconductors and insulators

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.326634

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

For access to fully linked references, you need to log in.
    H. M. J. Vaes and T. G. M. Kleinpenning, J. Appl. Phys. 48, 5131 (1977)JAPIAU000048000012005131000001.

    J. J. Brophy and N. Rostoker, Phys. Rev. 100, 754 (1955).


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