A model for the growth of oxidation stacking faults (OSF) has been developed with three main hypotheses: (1) The growth of the OSF is due to the diffusion of silicon self‐interstitials from the Si‐SiO2 interface to the partial dislocation. The diffusion coefficient of the interstitials can be determined from the data of silicon self‐diffusion. (2) The concentration of interstitials at the Si‐SiO2 interface, Cs, is determined by the equilibrium between the interstitials and the atoms of oxygen free to react with the silicon atoms, Cs =4.1×1018t−0.25 PO20.25 exp(−0.5/kT) F, where Cs is in cm−3, t is the time in seconds, PO2 is the oxygen partial pressure in atmospheres, and kT is in eV. F value is 1 for wafers of (001) orientation, and 0.7 for the (111) wafers. (3) The concentration of the interstitials in equilibrium with the partial dislocation, C0, in cm−3, is C0=12×1025 exp(−3.02/kT), with kT in eV. The majority of the experimental data can be calculated from R =1640Ft0.75 PO20.25 exp(−2.5/kT) −3.6×1010t exp(−5.02/kT), where R is one‐half of the OSF length in cm, t is in sec, PO2 is in atmospheres, and kT is in eV. The role of the vacancies in the OSF growth is also discussed, but the model favors a mechanism of silicon self‐diffusion involving a silicon interstitial, and a double mechanism for boron diffusion.