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1 Dec 1975

Volume 46, Issue 12, pp. 5065-5316

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Structure of surface layers of silicon heavily implanted with Ar

Iwao Ohdomari, Masahiro Ikeda, Kohsuke Ohno, and Tadatsugu Itoh

J. Appl. Phys. 46, 5065 (1975); http://dx.doi.org/10.1063/1.321308 (4 pages) | Cited 1 time

Online Publication Date: 2 September 2008

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A new ESR center at g=2.0029 which was first observed by Chu et al. in silicon implanted with 150‐keV argon ions to doses ≳1017 ions/cm2 has been observed, in addition to an amorphous center, in the course of our investigations of amorphous Si layers damaged by ion implantation, when Ar+ implantation dose is more than about 10 times the critical dose for amorphization. These heavily argon‐implanted layers of silicon were characterized using ESR and ESCA. The structure of these layers was identified using transmission electron microscopy. It is found that the new ESR center in heavily implanted layers is due to amorphous SiC.
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61.72.U- Doping and impurity implantation
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Slowing‐down time of energetic ions in solids

Ordean S. Oen and Mark T. Robinson

J. Appl. Phys. 46, 5069 (1975); http://dx.doi.org/10.1063/1.321309 (3 pages) | Cited 13 times

Online Publication Date: 2 September 2008

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The average time required for an energetic ion or primary knock‐on atom to slow down in a structureless solid has been calculated using a Thomas‐Fermi interaction potential and electronic stopping power which is proportional to the velocity. The relevance of this time to radiation damage production is discussed.
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61.80.Jh Ion radiation effects
61.80.Lj Atom and molecule irradiation effects
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams

Piezoelectric‐magnetoelastic surface wave guided by interface between semi‐infinite piezoelectric and magnetoelastic media

Makoto Tsutsumi, Tushar Bhattacharyya, and Nobuaki Kumagai

J. Appl. Phys. 46, 5072 (1975); http://dx.doi.org/10.1063/1.322196 (4 pages) | Cited 4 times

Online Publication Date: 2 September 2008

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This paper presents some useful discussions on the surface wave guided by the interface of two semi‐infinite media in contact, of which one is piezoelectric and the other magnetoelastic. The dispersion relation has been derived and the distribution of the electric potential and the particle displacement as a function of the depth has been estimated numerically for the chosen media of ZnO and GaYIG. Subsequently, it has been shown that the nonreciprocal transmission characteristics in the narrow band can be obtained when two media have different elastic constants.
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68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
75.80.+q Magnetomechanical effects, magnetostriction

Electrical properties of thin‐film Al‐CeF3‐Al capacitors

A. D. Kalra, J. G. Simmons, and G. S. Nadkarni

J. Appl. Phys. 46, 5076 (1975); http://dx.doi.org/10.1063/1.322186 (4 pages) | Cited 7 times

Online Publication Date: 2 September 2008

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The ac electrical properties of thin‐film Al‐CeF3‐Al samples are found to be extremely temperature and frequency dependent. Changes in capacitance are reported as high as 20 : 1 over a temperature range of 100 °C (at constant frequency) and a frequency range of a three decades (at constant temperature). At low temperatures and high frequencies the capacitance corresponds to the geometric capacitance, but at high temperatures and low frequencies the capacitance is independent of the film thickness. The results are explained in terms of Schottky barriers existing at the metal‐insulator interfaces. Excellent agreement is found to exist between the experimental data and the theory and this correlation permits determination of the doping density (?2×1019 cm−3), the donor depth (?0.64 eV), and the width of the Schottky barriers (? 50 Å) among other properties of the films.
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73.40.Rw Metal-insulator-metal structures
84.32.Tt Capacitors
73.30.+y Surface double layers, Schottky barriers, and work functions

Single‐crystal elastic constants of Zr2Ni

F. R. Eshelman and J. F. Smith

J. Appl. Phys. 46, 5080 (1975); http://dx.doi.org/10.1063/1.322187 (4 pages) | Cited 21 times

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The ultrasonic pulse‐echo‐overlap technique has been used to determine the six independent elastic constants of tetragonal Zr2Ni over the temperature range 4.2–300 K. The temperature dependence of the shear constants, particularly C66, are atypical and indicate a significant degree of mode softening at low temperatures. The results correlate with the recent calculation of Sinha and Harmon in that Zr2Ni satisfies their conditions for the development of charge density waves with attendant mode softening and support the view that mode softening and superconductivity are correlated.
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62.20.D- Elasticity
74.10.+v Occurrence, potential candidates
65.40.De Thermal expansion; thermomechanical effects

Elastic and dielectric constants in mixtures of nematic liquid crystals

Dietrich Meyerhofer

J. Appl. Phys. 46, 5084 (1975); http://dx.doi.org/10.1063/1.322188 (4 pages) | Cited 31 times

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The dielectric constants and two elastic constants were measured for a series of mixtures of two nematic liquid crystals, MBBA and PEBAB. The materials covered the range from 0 to 10% PEBAB. The parameters were calculated from the measured voltage dependence of capacitance. The dielectric constants vary linearly with PEBAB concentration and the anisotropy changes from negative to positive at 1.7%. The elastic constants remain fixed over most of the range, but are reduced in mixtures of small anisotropy. The results differ significantly from recent measurements of Michel and Smith, the probable reason being that we take any nonideal alignment at the surface explicitly into account in the calculations.
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81.05.-t Specific materials: fabrication, treatment, testing, and analysis
77.22.Ch Permittivity (dielectric function)
62.20.D- Elasticity

A technique for acoustic surface studies of nonpiezoelectric materials

D. A. Rockwell and J. H. Parks

J. Appl. Phys. 46, 5088 (1975); http://dx.doi.org/10.1063/1.322189 (4 pages) | Cited 4 times

Online Publication Date: 2 September 2008

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A technique is described for fluid coupling acoustic surface waves onto an arbitrary nonpiezoelectric material to allow the study of its surface properties. In these surface studies the relevant experimental information is contained in an induced phase change of the acoustic wave. For this reason, the primary concern was to develop a reliable technique by which this phase could be transmitted through the fluid interface. This issue has not been considered in previous work on fluid coupling. A simple physical model of the coupling mechanism is given, followed by a detailed description of the apparatus and procedure. Experimental studies of the phase change using the fluid‐coupling technique are compared with results obtained by direct surface‐wave excitation with interdigital transducers. The comparison shows that nonvolatile low‐viscosity fluids (e.g., water, xylene, and o‐dichlorobenzene) consistently reproduce the direct coupling results over a large variation of fluid‐coupling parameters. We present an example of the application of this technique to a problem of current research interest: alkali‐halide surface absorption of CO2 laser radiation.
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78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
72.50.+b Acoustoelectric effects

Bypassing of a barrier by dissociated and superlattice dislocations

B. L. Karihaloo

J. Appl. Phys. 46, 5092 (1975); http://dx.doi.org/10.1063/1.322190 (5 pages)

Online Publication Date: 2 September 2008

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Very simple procedures are used to calculate the upper and lower bounds for the applied stress required for the leading extended (superlattice) dislocation in a group of n coplanar screw dislocations of like sign with Burgers vector b to bypass a noncoplanar perfect screw dislocation with Burgers vector mb (m≪n). Since these bounds are very close to each other, especially for small m, the long‐range flow stress can be estimated accurately. The critical spacing between the parallel slip planes at the moment of bypass is determined in a natural way by studying the stability of equilibrium of the leader in the mobile group. Particular attention is paid to the effect of the stacking‐fault (the antiphase boundary) energy and the barrier strength m on the bypass stress.
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61.72.Lk Linear defects: dislocations, disclinations
62.20.-x Mechanical properties of solids

Dielectric alignment in an electrically conducting nematic liquid crystal

Hans Gruler and Lawrence Cheung

J. Appl. Phys. 46, 5097 (1975); http://dx.doi.org/10.1063/1.322191 (4 pages) | Cited 17 times

Online Publication Date: 2 September 2008

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For small deformations the local macroscopic electric field strength in a deformed uniaxial crystal is derived. For relative high frequencies (≫ σ/ϵ0ϵ) the electric field strength is determined by the anisotropic dielectric properties and for relative low frequencies (≪ σ/ϵ0ϵ) by the anisotropic electric conductivity. The local electric field strength is frequency independent if the dielectric and the electric conductivity tensor have the same anisotropy. The nonhydrodynamic deformation of a nematic liquid crystal under the influence of an electric field is derived from the torque balance equation in the small‐angle approximation. This dielectric alignment is frequency dependent corresponding to the frequency dependence of the local electric field strength.
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61.30.-v Liquid crystals
77.65.-j Piezoelectricity and electromechanical effects

Dislocation structures in fatigued copper‐aluminum alloys

T. K. Chu

J. Appl. Phys. 46, 5101 (1975); http://dx.doi.org/10.1063/1.321566 (9 pages) | Cited 2 times

Online Publication Date: 2 September 2008

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Low‐temperature (1.5–30 K) thermal conductivity measurments are used for a nondestructive determination of dislocation structures generated by cyclic deformation in two copper‐aluminum alloys (1 and 15 at.% Al in Cu). A torsional strain mode is adopted with an amplitude of a few percent. Fatigue life is estimated to be approximately 1000 cycles. In both alloys the change in lattice thermal resistivity due to deformation follows a T−2 dependence above 10 K, and a T−1 dependence below 2 K. At intermediate temperatures it is found to be composed of a T−2 and a T−3 term. This temperature variation is interpreted as due to phonon scattering by dislocations and by dislocation structures. Electron microscope observations by others indicate that these structures form cell walls in the lower‐concentration alloy, and dislocation bands in the higher‐concentration alloy. A dipole wall model of these substructures is proposed, and the corresponding lattice thermal resistivity calculated using a simple extension of Klemens’s theory of phonon scattering by the various lattice defects. These calculations give reasonable agreement with the experimental results. Dislocation densities are estimated to be of the order of 1012 cm−2 in the substructures, and of the order of 1010 cm−2 in the crystal matrix. It is found that dislocation substructures are formed during the first quarter ‐cycle of straining. Subsequent strain reversal tends to ’’condense’’ dislocations into cell walls and dislocation bands. As a result, there is a vary rapid saturation of dislocations in the substructures, which is almost complete after two cycles of deformation.
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61.72.Cc Kinetics of defect formation and annealing
61.72.Lk Linear defects: dislocations, disclinations
46.50.+a Fracture mechanics, fatigue and cracks
62.20.M- Structural failure of materials

Flow of covalent solids at low temperatures

J. J. Gilman

J. Appl. Phys. 46, 5110 (1975); http://dx.doi.org/10.1063/1.321567 (4 pages) | Cited 22 times

Online Publication Date: 2 September 2008

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An empirical correlation shows that the activation energy for plastic flow in covalent solids equals twice the energy gap. This provides evidence that the flow rate is controlled by the rate of tunneling of bonding electrons into nonbonding states under the influence of the applied stress. The model yields an explicit expression for the critical shear stress that contains no adjustable parameters, and which agrees quantitatively with observations for silicon. At finite temperatures tunneling is assisted by high‐frequency phonons. An explicit equation for the temperature dependence is derived that contains no disposable parameters and which conforms quite well with observations.
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62.20.F- Deformation and plasticity

Lamb wave in a thin piezoelectric ceramic plate under the influence of static tensile stress

Kohji Toda

J. Appl. Phys. 46, 5114 (1975); http://dx.doi.org/10.1063/1.321568 (2 pages) | Cited 1 time

Online Publication Date: 2 September 2008

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The effect of static tensile stress on the output voltage via the zeroth‐order symmetrical Lamb wave (s0 mode) and the convolution output were investigated in a thin piezoelectric ceramic plate. The convolution output increases with the cummulative load, while the output voltage via the s0 mode decreases. The results might be explained to arise from nonlinearities due to dislocation and/or via lattice anharmonicities.
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43.25.-x Nonlinear acoustics
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)

Detection of atomic oxygen and atomic hydrogen beams by semiconductors

Adir Jacob

J. Appl. Phys. 46, 5116 (1975); http://dx.doi.org/10.1063/1.321569 (6 pages) | Cited 3 times

Online Publication Date: 2 September 2008

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Experimental evidence indicated that semiconductors like Si, Ge, CdS, and ZnO prove to be suitable detectors of atomic oxygen and atomic hydrogen fluxes. With suitable operating conditions detection is possible in the presence of the parent molecular gases. The method described herein is specific, highly sensitive, and characterizied by simple handling.
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34.50.Lf Chemical reactions
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Electric‐field‐enhanced conductivity in solids

D. M. Pai

J. Appl. Phys. 46, 5122 (1975); http://dx.doi.org/10.1063/1.321570 (5 pages) | Cited 38 times

Online Publication Date: 2 September 2008

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The Onsager theory of dissociation, based upon the solution of Brownian equations of motion of charge carriers interacting through a Coulomb potential in an applied electric field, is shown to account for the electric‐field‐enhanced conductivity in solids. In contradistinction to often quoted one‐dimensional macroscopic Poole‐Frenkel theory and its varied three‐dimensional modifications, the Onsager theory is microscopic in nature and thus provides a quantitative description of the observed field enhancement of the conductivity.
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72.20.-i Conductivity phenomena in semiconductors and insulators

Microwave thermal emission from a stratified medium with nonuniform temperature distribution

L. Tsang, E. Njoku, and J. A. Kong

J. Appl. Phys. 46, 5127 (1975); http://dx.doi.org/10.1063/1.321571 (7 pages) | Cited 37 times

Online Publication Date: 2 September 2008

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Using the dissipation‐fluctuation approach, the brightness temperature of a stratified medium with inhomogeneous permittivities and nonuniform temperature profiles is solved. The solution is expressed in closed form ready for machine computation. Numerical results are illustrated and compared with closed‐form analytical solutions and results obtained from the WKB method for simple profiles.
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03.50.-z Classical field theories
93.85.Pq Remote sensing in exploration geophysics

Surface contamination of active electrodes in plasmas: Distortion of conventional Langmuir probe measurements

Edward P. Szuszczewicz and Julian C. Holmes

J. Appl. Phys. 46, 5134 (1975); http://dx.doi.org/10.1063/1.321572 (6 pages) | Cited 18 times

Online Publication Date: 2 September 2008

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Laboratory experiments were conducted to determine the effectiveness of a newly developed pulse technique in eliminating surface contamination effects and associated hysteresis in Langmuir probe current‐voltage characteristics. We found that (i) the pulse technique was superior to the conventional continuous sweep approach to Langmuir probe diagnostics; (ii) substantial potentials can develop across contaminating surface layers and that these potentials can vary in the conventional Langmuir procedure resulting in determinations of electron energies higher than actually present in the ambient plasma; and (iii) attempts to achieve ’’clean‐probe’’ operation by heating can be of limited value.
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52.70.Ds Electric and magnetic measurements

The static electrification of mixtures of insulating powders

L. B. Schein and J. Cranch

J. Appl. Phys. 46, 5140 (1975); http://dx.doi.org/10.1063/1.321573 (10 pages) | Cited 10 times

Online Publication Date: 2 September 2008

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The experimental considerations for studying the static electrification of insulators in mixtures of insulating powders are discussed. This powder geometry is compared to the more traditional geometries and the techniques for measuring the charge exchange are critically examined. It is demonstrated that the measurement technique does not alter the static charge on the powder particles and that, in mixtures of two powders, the charge distribution among similar‐sized smaller powder particles is narrow. This result suggests that a significant fraction of the ∼1010 particles have acquired the same static charge. Such regularity suggests that mixtures of insulating powders may be useful for studying the central problem in the static electrification of insulators, whether ions or electrons are transferred during the charge exchange process.
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73.90.+f Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures (Restricted to new topics in section 73)
81.40.Rs Electrical and magnetic properties related to treatment conditions

The effect of ion‐cyclotron motion on the transverse interactions in beam‐plasma systems

O. Demokan

J. Appl. Phys. 46, 5150 (1975); http://dx.doi.org/10.1063/1.321574 (2 pages)

Online Publication Date: 2 September 2008

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In this work the instability of the transverse modes with left‐hand polarization and frequencies around the ion‐cyclotron frequency, propagating parallel to an external magnetic field in an unbounded homogeneous electron beam‐plasma system, is investigated. The beam velocity is assumed to be parallel to the magnetic field. The ion distribution is assumed to have a certain velocity spread perpendicular to the external magnetic field, as a result of a possible ion‐cyclotron resonance interaction with the instability. It is shown that even for very small values of this average perpendicular velocity the instability ceases to exist, practically regardless of the value of the beam velocity.
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52.40.Mj Particle beam interactions in plasmas
52.50.Gj Plasma heating by particle beams
52.35.Py Macroinstabilities (hydromagnetic, e.g., kink, fire-hose, mirror, ballooning, tearing, trapped-particle, flute, Rayleigh-Taylor, etc.)

Photon‐correlation measurements on light scattered by a nematic liquid crystal under a dc electric field

M. Zulauf, M. Bertolotti, and F. Scudieri

J. Appl. Phys. 46, 5152 (1975); http://dx.doi.org/10.1063/1.321575 (6 pages) | Cited 2 times

Online Publication Date: 2 September 2008

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The photon‐correlation technique is applied to study the behavior of the second‐order correlation function g(2)(τ) of light scattered by a liquid crystal under an external dc electric field. Different qualitative shapes of g(2)(τ) at varying electric fields are distinguished and their possible relation to different scattering processes are discussed.
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61.30.-v Liquid crystals
42.50.-p Quantum optics
81.05.-t Specific materials: fabrication, treatment, testing, and analysis

Bremsstrahlung reduction by dielectric trapping

J. J. Wade and D. L. Hollis

J. Appl. Phys. 46, 5158 (1975); http://dx.doi.org/10.1063/1.321307 (5 pages)

Online Publication Date: 2 September 2008

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A mathematical model is used to analyze the effects of trapped negative charges in a dielectric absorber on bremsstrahlung production from low to moderate energy electrons. Significant changes in the bremsstrahlung spectra are predicted when the induced field due to trapped electrons is sufficiently large. Experiments with T1‐204 and an electron accelerator as electron sources indicate that bremsstrahlung reduction does occur, although the effect is limited by radiation‐induced conductivity.
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28.41.Te Protection systems, safety, radiation monitoring, accidents, and dismantling
61.80.Fe Electron and positron radiation effects
77.22.Jp Dielectric breakdown and space-charge effects

Critical current changes in Nb3Sn irradiated with fast neutrons at 6 K

B. S. Brown, T. H. Blewitt, D. G. Wozniak, and M. Suenaga

J. Appl. Phys. 46, 5163 (1975); http://dx.doi.org/10.1063/1.322192 (6 pages) | Cited 18 times

Online Publication Date: 2 September 2008

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Multifilament copper‐clad wires of Nb3Sn have been irradiated at 6 K to a dose of 1.8×1018 n/cm2 (E≳0.1 MeV). The critical current (Jc) was measured as a function of dose and applied magnetic field to 33 kOe. After 1.2×1018 n/cm2, an increase of 33% in Jc occurred at 33 kOe from an initial value of 1.5×106 A/cm2 at 4.5 K. The increase was smaller at lower applied fields, and Jc actually decreased for H<8 kOe. For all fields, the increase in Jc eventually saturated and then decreased as the dose increased, with the saturation dose increasing with increasing applied field. The critical temperature (Tc) changed by <1 K at the highest dose. Approximately 25% of the change in Jc recovered after a 295 K anneal. The Jc changes are explained as an increase in flux pinning from radiation‐induced defect cascades that leads to an increase in Jc greater than the decrease in Jc which results from a decrease in Tc of 1 K and from the increase in Hc2 produced by the increase in normal resistivity. A model is proposed that allows the prediction of the dose dependence of various terms in the pinning‐force density and explains the field and dose dependence of the Jc changes. Measurements of the superconducting–to–normal‐state thermal transition indicate that the decrease in thermal conductivity of the Cu cladding is important when considering the degradation of the thermal transition current that occurs at high doses.
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74.25.Sv Critical currents
61.80.Hg Neutron radiation effects

Revised dynamical theory of thermoplastic deformation

U. Killat

J. Appl. Phys. 46, 5169 (1975); http://dx.doi.org/10.1063/1.322193 (4 pages) | Cited 10 times

Online Publication Date: 2 September 2008

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A method of quantifying the influence of the surface charge on the deformation of thermoplastics has been proposed. The results obtained from our analysis are compared with measurements of the spatial frequency distribution of thermoplastic frost deformation. The agreement between theory and experiment is found to be satisfactory in view of the approximations made in analysis.
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42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
42.40.Ht Hologram recording and readout methods
42.70.Gi Light-sensitive materials

Conductance and capacitance studies in GaP Schottky barriers

G. Vincent, D. Bois, and P. Pinard

J. Appl. Phys. 46, 5173 (1975); http://dx.doi.org/10.1063/1.322194 (6 pages) | Cited 104 times

Online Publication Date: 2 September 2008

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A study of the conductance and capacitance associated with traps in Schottky barriers is described. A sample calculation of these two quantities is developed and compared with experimental data obtained in GaP VPE saples. It is shown that traps introduce peaks on the conductance‐vs‐temperatures curves; from them the concentration of each trap can be calculated. A study at different frequencies permits the determination of the characteristics of the traps. In GaP we have observed trapping effects in donor levels at Ec−Et?100 and 86 meV, the emission rates were found, respectively, to equal 2×1011 and 2×109 s−1 for these two levels. It is also shown that photoconductance effects occur at the oxygen deep levels.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.30.+y Surface double layers, Schottky barriers, and work functions
72.80.Ey III-V and II-VI semiconductors

Temperature dependence of current flows in nondegenerate MIS tunnel diodes

J. Shewchun and M. A. Green

J. Appl. Phys. 46, 5179 (1975); http://dx.doi.org/10.1063/1.322195 (6 pages) | Cited 7 times

Online Publication Date: 2 September 2008

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Current flows in the nondegenerate metal‐insulator‐semiconductor (MIS) tunnel diode are temperature sensitive. This temperature sensitivity can be an aid in interpreting the properties of these devices. It allows information regarding the energy distribution of particles tunneling between the metal and the semiconductor to be obtained as well as providing another technique for estimating metal‐semiconductor barrier height. Experimental support is given for the existence of minority‐ and majority‐carrier diodes as well as for devices where the current flow is dominated by tunneling between the metal and surface‐state levels.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.-r Electron states at surfaces and interfaces

Capacitance properties of MIS tunnel diodes

M. A. Green and J. Shewchun

J. Appl. Phys. 46, 5185 (1975); http://dx.doi.org/10.1063/1.321583 (6 pages) | Cited 19 times

Online Publication Date: 2 September 2008

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The theoretical capacitance properties of the metal‐insulator‐semiconductor (MIS) tunnel diode are described. It is shown that devices with relatively thick insulating layers display properties similar to conventional MIS capacitors, while those with thinner insulating layers differ appreciably. Frequency‐dependent features can occur in the characteristics of these devices as a result of a delayed inversion layer response. The presence of such features in experimental devices provides support for the inversion layer clamping process predicted theoretically. Because of these frequency‐dependent features, it is shown that caution must be exercised when using MIS tunnel diodes for obtaining surface‐state information.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.-r Electron states at surfaces and interfaces
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