Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors

Lang, D. V.

doi:doi:10.1063/1.1663719

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Journal of Applied Physics / Volume 45 / Issue 7

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J. Appl. Phys. 45, 3023 (1974); http://dx.doi.org/10.1063/1.1663719 (10 pages)

Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors

D. V. Lang

Bell Laboratories, Murray Hill, New Jersey 07974

(Received 8 January 1974)

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Abstract

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A new technique, deep‐level transient spectroscopy (DLTS), is introduced. This is a high‐frequency capacitance transient thermal scanning method useful for observing a wide variety of traps in semiconductors. The technique is capable of displaying the spectrum of traps in a crystal as positive and negative peaks on a flat baseline as a function of temperature. It is sensitive, rapid, and easy to analyze. The sign of the peak indicates whether the trap is near the conduction or valence band, the height of the peak is proportional to the trap concentration, and the position, in temperature, of the peak is uniquely determined by the thermal emission properties of the trap. In addition, one can measure the activation energy, concentration profile, and electron‐ and hole‐capture cross sections for each trap. The technique is presented with a simple theoretical analysis for the case of exponential capacitance transients. Various traps in GaAs are used as examples to illustrate certain features of the DLTS technique. Finally, a critical comparison is made with other recent capacitance techniques.