jap banner
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

SECTION LISTING

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue

1 Dec 1974

Volume 45, Issue 12, pp. 5123-5486

Page 1 of 3 Pages Next Page | Jump to Page

The origin of non‐Gaussian profiles in phosphorus‐implanted silicon

P. Blood, G. Dearnaley, and M. A. Wilkins

J. Appl. Phys. 45, 5123 (1974); http://dx.doi.org/10.1063/1.1663203 (6 pages) | Cited 14 times

Online Publication Date: 6 October 2003

Full Text: | Download PDF

Show Abstract
The origin of the tail on the distribution of phosphorus atoms implanted into misaligned silicon crystals has been established by measuring the number of phosphorus atoms transmitted through thin silicon crystals during implantation. Experiments on 〈110〉 and 〈100〉 crystals show that the tail is due entirely to atoms which are scattered into channels. The preparation of crystals 0.4–0.8 μm thick from epitaxial layers by selective electrochemical etching and ion beam thinning is described and the measurement of their thickness by backscattering techniques is discussed. It is suggested that the tails on the profiles of other dopants in silicon are also due to atoms which have entered channels in the crystals.

Dynamic dislocation behavior in iron‐doped magnesium oxide crystals containing dislocation dipoles

R. N. Singh and R. L. Coble

J. Appl. Phys. 45, 5129 (1974); http://dx.doi.org/10.1063/1.1663204 (7 pages) | Cited 7 times

Online Publication Date: 6 October 2003

Full Text: | Download PDF

Show Abstract
Edge‐ and screw‐dislocation velocities in iron‐doped magnesium oxide single crystals containing dislocation dipoles and 90 ppm iron have been measured as a function of the stress (at stresses below the macroscopic yield stress), temperature, and valence state of the iron impurities to identify the rate‐controlling drag mechanisms for dislocation mobility. Edge dislocations have been observed to move faster than screw dislocations in the Fe2+ and Fe3+ valence states over the stress and temperature regimes investigated. The edge and screw dislocations move faster in reduced samples than in oxidized samples. From the analysis of the edge‐ and screw‐dislocation velocity data in terms of the activation parameters (volume, enthalpy, total enthalpy, and the stress exponent of dislocation velocity), it is proposed that the screw‐dislocation mobility in MgO single crystals containing dislocation dipoles and 90 ppm iron in the oxidized state is controlled by the interaction of dislocations with noncentrosymmetric defects (FeMg ⋅−V″Mg). However, the edge‐dislocation mobility in the oxidized crystals is governed by the interaction of the edge dislocations with the dislocation dipoles. Moreover, the edge‐ and screw‐dislocation mobilities in the reduced state are also controlled by the interaction of the edge dislocations with the dislocation dipoles.

Frequency characteristics of an interdigital transducer for Lamb wave excitation

Kohji Toda

J. Appl. Phys. 45, 5136 (1974); http://dx.doi.org/10.1063/1.1663205 (5 pages) | Cited 1 time

Online Publication Date: 6 October 2003

Full Text: | Download PDF

Show Abstract
The frequency characteristics of the surface displacements of the Lamb waves excited by interdigital transducers on unpolarized piezoelectric ceramic plates have been analyzed by using the same method as Tseng's analysis of Rayleigh wave excitation. This analysis has lead to the conclusion that the transducer operates most effectively when the wavelength of the Lamb wave is equal to the half‐period of the electrode. The dispersive characteristics of the zeroth modes in a comparatively thick specimen are also shown. Our discussion dwells on the frequency dependence of the surface displacement on the total number of the electrode fingers in a transducer and the electrode configurations.

Platinum silicide formation: Electron spectroscopy of the platinum‐platinum silicide interface

S. Danyluk and G. E. McGuire

J. Appl. Phys. 45, 5141 (1974); http://dx.doi.org/10.1063/1.1663206 (4 pages) | Cited 10 times

Online Publication Date: 6 October 2003

Full Text: | Download PDF

Show Abstract
Platinum silicide formation has been studied by Auger electron spectroscopy (AES) and x‐ray photoelectron spectroscopy (XPS) in conjunction with argon ion depth profiling. These techniques were used to probe the chemistry of the interface between the Pt metal and PtSi formed from two standard platinum deposition processes: dc sputtering and filament evaporation. The results indicate that after sintering in nitrogen, the PtSi is separated from the platinum metal by a ``protective'' layer which has tentatively been identified as PtSiO4. This ``protective'' layer has a significantly slower etch rate in standard etchants than the platinum metal and platinum silicide and may be formed during sintering by an interaction between the platinum metal and the native silicon dioxide. The platinum silicate identification is based on the XPS ``chemical shifts'' found for both the platinum and silicon core levels. The silicate layer formation appears to be independent of the technique for platinum deposition.

Acousto‐optic properties of some chalcogenide crystals

M. Gottlieb, T. J. Isaacs, J. D. Feichtner, and G. W. Roland

J. Appl. Phys. 45, 5145 (1974); http://dx.doi.org/10.1063/1.1663207 (7 pages) | Cited 26 times

Online Publication Date: 6 October 2003

Full Text: | Download PDF

Show Abstract
We report results of extensive measurements on the acousto‐optic properties of several sulfosalt‐type chalcogenide crystals. These materials typically are transparent from the near ir to the intermediate ir, with refractive indices ranging from 2.5 to 3. Their acoustic velocities are among the lowest of any material, and ultrasonic attenuation remains low for frequencies to 500 MHz. These properties lead to exceptionally high acousto‐optic figures of merit.

Domain‐impurities interaction in KNbO3 single crystals

M. B. Mishra and S. G. Ingle

J. Appl. Phys. 45, 5152 (1974); http://dx.doi.org/10.1063/1.1663208 (4 pages) | Cited 17 times

Online Publication Date: 6 October 2003

Full Text: | Download PDF

Show Abstract
Impurity segregations and their interactions with domains and dislocations in KNbO3 single crystals have been studied. In the technique used, impurity structures in the bulk are first brought to the surface by removing layers of crystal without stress by methyl alcohol. The domain structure in the crystal remains completely undisturbed in this process. The dislocation pattern is then revealed by etch pits produced with an etchant such as a mixture of a concentrated solution of ammonium acetate in water and hydrogen peroxide (30% wt∕vol) in the volume ratio 1 : 2. It has been found that impurity segregations interfere quite appreciably with domain formation. Segregations around arrays of edge dislocations form surprisingly straight lines parallel to pseudocubic 〈100〉 directions, appearing very similar to 60° domain lines under reflected light. Under these conditions, they prevent the formation of a 60° domain. Domain walls terminate at such lines, and may also be bent as a result of segregation‐dislocation interactions, occupying crystallographically irregular positions. These and other observations are discussed, providing the necessary microscopic and interferometric evidence.

Optoacoustic testing of microsound devices

E. Bridoux, J. M. Rouvaen, M. Moriamez, R. Torguet, and P. Hartemann

J. Appl. Phys. 45, 5156 (1974); http://dx.doi.org/10.1063/1.1663209 (4 pages) | Cited 2 times

Online Publication Date: 6 October 2003

Full Text: | Download PDF

Show Abstract
Acoustic surface wave (ASW) components have been tested by visualizing the acoustic field amplitude and phase distribution in real time in the 15–25‐MHz frequency range. The properties of some useful devices are reported here.

Electro‐optically induced deflection in liquid‐crystal waveguides

J. P. Sheridan and T. G. Giallorenzi

J. Appl. Phys. 45, 5160 (1974); http://dx.doi.org/10.1063/1.1663210 (4 pages) | Cited 10 times

Online Publication Date: 6 October 2003

Full Text: | Download PDF

Show Abstract
This paper describes electro‐optically induced tunable deflection in the plane of a waveguide structure by utilizing the liquid‐crystal property of tunable birefringence together with appropriately designed electrodes. The magnitude of tunable deflection achieved in this experiment (>20°) had only been demonstrated in passive structures in the past. Furthermore, by changing the device parameters slightly, electrically controlled total internal reflection or refraction in the plane of the waveguide structure was demonstrated. This allowed operation of the device as a switch where the guided beam was deflected or ``switched'' through a very large angle (>70°) in the plane of the guide.

Adsorption and condensation of Cu on W single‐crystal surfaces

E. Bauer, H. Poppa, G. Todd, and F. Bonczek

J. Appl. Phys. 45, 5164 (1974); http://dx.doi.org/10.1063/1.1663211 (12 pages) | Cited 142 times

Online Publication Date: 6 October 2003

Full Text: | Download PDF

Show Abstract
The adsorption and condensation of Cu up to several monolayers in thickness on tungsten {110} and {100} single‐crystal surfaces are studied by combining low‐energy electron diffraction, Auger electron spectroscopy, thermal desorption spectroscopy, work‐function measurements, and quartz microbalance thickness measurements in one experimental system. The results show drastic differences in the evolution of the structure, work function, and desorption behavior between {110} and {100} surfaces. These differences are understandable in terms of the atomic roughness of the surfaces.

Motion of two screw dislocations in a lattice

N. Flytzanis, V. Celli, and A. Nobile

J. Appl. Phys. 45, 5176 (1974); http://dx.doi.org/10.1063/1.1663212 (6 pages) | Cited 10 times

Online Publication Date: 6 October 2003

Full Text: | Download PDF


See Also: Erratum

Show Abstract
In a simple model of a cubic lattice with piecewise linear and nearest‐neighbor interactions a solution is obtained for the motion of two parallel screw dislocations of the same sign, under the action of a constant applied stress. The only damping mechanism considered is the emission of sound waves. The important parameters are the external strain s and the dislocation separation α. They are determined by energy balance and the boundary conditions imposed by the force law. The main result is the existence of multiple branches in the strain versus velocity curve, the lowest of which corresponds to an external strain less than that of a single dislocation. However, in the snapping bond model, two dislocations, as well as a single dislocation, cannot move at supersonic velocities without causing a breakdown of the crystal.

Ultrasonic attenuation in spheroidized steel

R. H. Latiff and N. F. Fiore

J. Appl. Phys. 45, 5182 (1974); http://dx.doi.org/10.1063/1.1663213 (5 pages) | Cited 1 time

Online Publication Date: 6 October 2003

Full Text: | Download PDF

Show Abstract
Theories of grain scattering in single‐phase microstructures are briefly reviewed. A discussion of multiphase scattering is given with emphasis on an extension of theory which allows computation of attenuation α in two‐phase systems. The expanded theory predicts that α should increase with frequency f and decrease with radius a of the scattering particle at constant scatterer volume fraction. Attenuation measurements made at 7–50‐MHz on spheroidized Fe‐0.8C steel are described. Attenuation increases as f2 in comparison to the f4 dependence of single‐phase grain scattering theory. It also passes through a minimum as a function of tempering time, because of combined grain scattering and particle scattering losses. The magnetic component of attenuation passes through a maximum at 50 MHz as predicted by microeddy current magnetic damping theory.

Uranium self‐diffusion in stoichiometric uranium monocarbide

Hj. Matzke, J. L. Routbort, and H. A. Tasman

J. Appl. Phys. 45, 5187 (1974); http://dx.doi.org/10.1063/1.1663214 (9 pages) | Cited 13 times

Online Publication Date: 6 October 2003

Full Text: | Download PDF

Show Abstract
Self‐diffusion measurements, with 233U as the tracer, have been obtained for stoichiometric arc‐cast UC at temperatures between 1480°C and the melting point and for zone‐refined UC single crystals at temperatures between 1500 and 2125°C. α spectroscopy was used to measure the α‐energy degradation from which the diffusion profiles were determined. Conventional sectioning techniques were employed to determine the profiles at high temperatures. The results obtained from arc‐cast UC yielded a curved Arrhenius plot. Computer programs were developed to fit the sum of two exponentials to the experimental data. This was accomplished by changing one or two of the parameters, D0,1, D0,2, ΔH1, and ΔH2, in steps and adjusting the remaining parameters to obtain the minimum standard deviation σ. The resultant equation was DUCU = 6.9exp(−141 000/RT)+3.6×10−5exp(−84 500/RT) cm2sec−1. The data obtained from the single crystals showed a linear Arrhenius plot described by DUCU = 11.7exp(−141 900/RT) cm2sec−1. The influence of impurities at low temperatures (math2100°C) is the most probable cause of the curvature in the Arrhenius plot for the arc‐cast UC.

Introduction rates and annealing of defects in ion‐implanted SiO2 layers on Si

E. P. EerNisse and C. B. Norris

J. Appl. Phys. 45, 5196 (1974); http://dx.doi.org/10.1063/1.1663215 (10 pages) | Cited 73 times

Online Publication Date: 6 October 2003

Full Text: | Download PDF


See Also: Erratum

Show Abstract
The introduction rates and isochronal annealing behavior of structural defects created by atomic collision or ionization in SiO2 layers thermally grown on Si in O2 and steam are investigated by measuring the induced volume compaction for ion and electron bombardments. The use of compaction measurements permits study of the introduction and annealing of defects with little confusion from changes in the charge state of the defects. The structural damage created by ion energy deposited into atomic collisions is found to be complex, possibly consistent with a thermal process involving reordering of the noncrystalline network of Si☒O tetrahedra, and to anneal in a slow featureless manner beginning around 300°C and returning to the original density near the original growth temperature. The structural damage created by ion or electron energy deposited into ionization is identified with broken Si‐O bonds and found to anneal completely in a single well‐defined stage centered at 650°C. The ionization‐induced structural defect is the same for ion and electron ionization if no appreciable atomic collision energy deposition occurs simultaneously. Additional structural damage arising from an interaction between atomic collisions and ionization is demonstrated. The results demonstrate that other workers' observation of annealing in damaged oxides at 300°C corresponds to emptying of charged defects rather than annealing of the structural defects.

Comparison of Langmuir probe and Thomson scattering measurements of electron temperature and density

Larry A. Jones

J. Appl. Phys. 45, 5206 (1974); http://dx.doi.org/10.1063/1.1663216 (3 pages) | Cited 2 times

Online Publication Date: 6 October 2003

Full Text: | Download PDF

Show Abstract
Measurements of electron temperature and density made with Langmuir probes are compared to those made by Thomson scattering. The comparison is made over a range of electron density [(0.3−1.6)×1015 cm−3] and temperature (1–2 eV). The two diagnostic techniques agree to within 20% in the case of the electron temperature and to within 10% in the case of the electron density.

Quasistatic calculation of radial plasma velocity in laser‐heated solenoid

W. Halverson

J. Appl. Phys. 45, 5209 (1974); http://dx.doi.org/10.1063/1.1663217 (2 pages) | Cited 4 times

Online Publication Date: 6 October 2003

Full Text: | Download PDF

Show Abstract
The one‐dimensional quasistatic model of a laser‐heated magnetically confined plasma is used to compute the radial plasma flow velocity.

Frequency‐dependent absorption efficiency and neutron production in low‐energy laser irradiation of slab targets

Edward B. Goldman

J. Appl. Phys. 45, 5211 (1974); http://dx.doi.org/10.1063/1.1663218 (7 pages) | Cited 1 time

Online Publication Date: 6 October 2003

Full Text: | Download PDF

Show Abstract
A series of numerical experiments have been performed to examine the efficiency of the coupling of laser energy into a plasma target. Classical inverse bremsstrahlung absorption is considered in both the weak‐ and strong‐field limits at laser intensities from ∼ 1015 to ∼ 1016 W cm−2 at the fundamental and first harmonic neodymium laser frequencies. Frequency multiplication from the fundamental to the harmonic is shown to lead to desirable results even if the conversion efficiency is low. The computed absorption, x‐ray generation, and neutron production are compared with experimental results. Nonthermal mechanisms are discussed to account for the result that much larger neutron production is found experimentally than can be accounted for in a numerical model.

Evolution of parametrically excited ion‐acoustic waves

L. A. Klein, B. Ru‐Shao Cheo, and R. A. Stern

J. Appl. Phys. 45, 5218 (1974); http://dx.doi.org/10.1063/1.1663219 (7 pages) | Cited 6 times

Online Publication Date: 6 October 2003

Full Text: | Download PDF

Show Abstract
A technique for experimentally determining growth and decay characteristics of parametrically excited plasma waves is described. The method is based on switching the pump power between two levels and observing the evolution of the excited waves in time. By using a nonlinear phenomenological model, the linear damping frequency and decay rates of the excited waves are found as is a coupling coefficient between the pump and excited waves. Experiments were conducted in the positive column of an argon discharge in a Tonks‐Dattner structure using a microwave pump. Observed damping of the excited ion‐acoustic wave at pressures between 10 and 44 mTorr is shown to be consistent with ionization collisions, while the decay rate is shown to be a linear function of pump power.

Study of an electron‐beam discharge into a vacuum diode with polyethylene anode

J.R. Kerns and D.J. Johnson

J. Appl. Phys. 45, 5225 (1974); http://dx.doi.org/10.1063/1.1663220 (4 pages) | Cited 12 times

Online Publication Date: 6 October 2003

Full Text: | Download PDF

Show Abstract
A 40‐nsec‐duration 2.5‐MV 25‐kA electron‐beam discharge into a vacuum diode with polyethylene anode has been studied with time‐resolved optical photography and soft x‐ray diagnostics. The beam was observed to be initially uniform but to filament at 15 nsec and form a single powerful pinch at 25 nsec. The interaction of the pinched beam and the anode produces a plasma ≤ 75 μm in diameter with a temperature of ∼ 50 eV. Neutron and deuteron emission from the diode were observed and the intensity ratios are consistent with a beam target neutron production mechanism.

Effect of electron‐electron and electron‐ion collisions in Hg, CO2∕N2∕He, and CO∕N2 discharges

Stephen D. Rockwood

J. Appl. Phys. 45, 5229 (1974); http://dx.doi.org/10.1063/1.1663221 (6 pages) | Cited 20 times

Online Publication Date: 6 October 2003

Full Text: | Download PDF

Show Abstract
Through numerical solution of the Boltzmann transport equation, including the effects of electron‐electron and electron‐ion collisions, the dependence of transport coefficients and excitation rates on E∕N and the fractional ionization have been obtained for electrical discharges in Hg, He∕N2∕CO2, and N2∕CO mixtures. The results for Hg show a sensitive dependence on fractional ionization when E∕N < 10−16 V cm2. However, for the molecular gases with values of E∕N typical of laser discharges, the dependence on fractional ionization is generally weak. The one exception noted is the 1∕0.25∕3 CO2∕N2∕He mixture.

Cathode spot erosion and ionization phenomena in the transition from vacuum to atmospheric pressure arcs

C. W. Kimblin

J. Appl. Phys. 45, 5235 (1974); http://dx.doi.org/10.1063/1.1663222 (10 pages) | Cited 89 times

Online Publication Date: 6 October 2003

Full Text: | Download PDF

Show Abstract
Cathode properties of arcs are investigated for ambient gas pressures of 10−3−725 Torr. Copper, silver, and carbon electrodes are used in controlled ambients of either nitrogen, argon, or helium. Experimental techniques include pressure‐dependent observations of the ionized cathode vapor detected at cylindrical collectors surrounding the electrodes, arc photography, and measurements of the cathode erosion rate for copper at 100 A using the weight loss method. At pressures approaching atmospheric, it is shown that the measured erosion rate is reduced from that in vacuum by about an order of magnitude. Increasing the ambient pressure also decreases the distance from the cathode spots at which the 8% ion current can be detected. Data extrapolation shows that cathode spots at atmospheric pressure, particularly in the lighter gases, are still associated with the fundamental ion current. Comparison between the measured reductions in both the erosion rates and the ion currents indicates that vapor and ion redeposition on the cathode contribute to the decreased erosion. It is concluded that the cathode spots of low current arcs at pressures approaching atmospheric are basically similar to vacuum arc cathode spots. The final section of the paper compares current‐dependent erosion data for copper arcs in vacuum and air, and shows the importance of collective cathode spot heating.

Small‐signal transit‐time analysis of a planar mobility‐dominated ion sheath

B. M. Oliver, P. R. Smy, and R. M. Clements

J. Appl. Phys. 45, 5245 (1974); http://dx.doi.org/10.1063/1.1663223 (6 pages) | Cited 4 times

Online Publication Date: 6 October 2003

Full Text: | Download PDF

Show Abstract
The effective impedance of a planar collision‐dominated ion sheath for frequencies below the electron plasma frequency has been obtained from a solution of the small‐signal equations of motion expressed in Eulerian coordinates. The analysis assumes a well‐defined sheath boundary and is similar to a previous study by Llewellyn on collisionless diodes. The results of the present analysis show a sheath capacitance component which is highly dependent on the probing frequency relative to the ion transit time in the sheath. Good agreement is obtained between theoretical predictions and experimental measurements of the sheath capacitance as a function of frequency, probe potential, and probe current. The plasma source was the positive column of a high‐pressure (10 Torr) helium dc discharge with a plasma electron density between 5 × 1015 and 4 × 1017 m−3 and a temperature ≈ 23 000°K.

On the Čerenkov threshold associated with synchrotron radiation in a dielectric medium

R. J. Pogorzelski, C. Yeh, and K. F. Casey

J. Appl. Phys. 45, 5251 (1974); http://dx.doi.org/10.1063/1.1663224 (6 pages) | Cited 4 times

Online Publication Date: 6 October 2003

Full Text: | Download PDF

Show Abstract
A formal exact expression for the radiation field of a charged particle executing a circular orbit in a dispersive dielectric medium is obtained by means of a dyadic Green's function approach. The field is expressed as an infinite sum of vector spherical harmonics. The radiated power P is computed numerically and a set of universal curves of nP∕q2Ω2 vs n β is obtained where q is the charge on the particle, n is the index of refraction of the medium, Ω is the orbital angular velocity of the particle, and β=v∕c, where v is the particle velocity and c is the speed of light in vacuum. The Čerenkov threshold phenomenon is shown to be manifest primarily in the high‐frequency portion of the radiated spectrum. For an index of refraction of unity, the result is shown (at low velocities) to be identical with both Larmor's formula for the radiated power and Schwinger's result for the angular distribution of the radiation.

Traveling ionization disturbance during microwave breakdown of argon

Robert E. McIntosh

J. Appl. Phys. 45, 5257 (1974); http://dx.doi.org/10.1063/1.1663225 (3 pages)

Online Publication Date: 6 October 2003

Full Text: | Download PDF

Show Abstract
We report here the excitation of a propagating ionization disturbance during the transient microwave breakdown of argon. Evidence gathered from spectroscopic observations indicates that this disturbance travels away from the generating source at a velocity which depends on pressure and the magnitude of the microwave pulse.

Auger electron spectroscopy study of cathode surfaces during activation and poisoning. I. The barium‐on‐oxygen‐on‐tungsten dispenser cathode

R. W. Springer and T. W. Haas

J. Appl. Phys. 45, 5260 (1974); http://dx.doi.org/10.1063/1.1663226 (4 pages) | Cited 5 times

Online Publication Date: 6 October 2003

Full Text: | Download PDF

Show Abstract
Auger electron spectroscopic analyses of the chemical changes taking place on a commonly used dispenser cathode have been carried out during activation and poisoning by several reactive gases (O2, CO, CO2, H2, N2, Ar). The chemical composition and work‐function changes on the cathode were correlated at various stages of activation and poisoning, both at room temperature and at operating temperature. During activation, a process of considerable cleaning up of unwanted contaminants (chiefly carbon) occurs. Poisoning by reactive gases causes changes in the Ba☒O ratio. A good agreement with the theoretical predictions for barium and oxygen concentrations of ∼1014 atoms∕cm2 made by Zalm and our results was found. Over all, our results show that the excess barium adsorption model correctly explains electron emission from the dispenser cathode.

Time evolution of developed contours in poly‐(methyl methacrylate) electron resist

James S. Greeneich

J. Appl. Phys. 45, 5264 (1974); http://dx.doi.org/10.1063/1.1663227 (5 pages) | Cited 13 times

Online Publication Date: 6 October 2003

Full Text: | Download PDF

Show Abstract
The time evolution of exposure contours in poly‐(methyl methacrylate) (PMMA) electron resist is calculated for several time‐dependent developers comprised of various proportions of methyl isobutyl ketone (MIBK) and isopropyl alcohol (IPA). Contours are calculated for a line of charge incident on 4000 Å of resist coated on a low‐atomic‐number substrate. Parameters such as beam energy, incident charge per unit length, original molecular weight, and developer temperature are considered. The use of a time‐dependent developer greatly influences the shape of the developed contours and the development time. The more active the developer (expressed in terms of the PMMA solubility rate), the greater the influence of developer time on the contours. Use of higher beam energies results in developed contours confined closer to the beam axis and less sensitive to development time. The incident charge per unit length is very important. For the MIBK developer and at low doses the characteristic undercut phenomenon is not obtained except for long development times, resulting in an increase in linewidth and a reduction in original resist thickness. The principal result of using lower original molecular weight and∕or higher developer temperature is to reduce the development time for a given contour.
Page 1 of 3 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close