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1 Aug 1973

Volume 44, Issue 8, pp. 3379-3811

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Depolarization fields in thin ferroelectric films

R. R. Mehta, B. D. Silverman, and J. T. Jacobs

J. Appl. Phys. 44, 3379 (1973); http://dx.doi.org/10.1063/1.1662770 (7 pages) | Cited 140 times

Online Publication Date: 9 October 2003

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A mechanism is proposed to explain depolarization phenomena that have been observed in thin ferroelectric films and related multilayer devices. It is shown that, for a short‐circuited electrode‐ferroelectric structure, incomplete compensation of the ferroelectric polarization charge results when the center of gravity of this charge and the free compensation charge are not coincident. Depolarization fields in the ferroelectric arising from such incomplete compensations are estimated. A simple switching calculation shows such fields to be of sufficient strength to account for the initial polarization decay rate observed in Pb0.92Bi0.07La0.01 (Fe0.405Nb0.325Zr0.27)O3 films. The results of measurements involving changes in film thickness, electron concentration in the electrodes, and contact materials will be discussed and shown to be consistent with the mechanism proposed.

Structure and thermal stability of sputtered Au☒Ta films

A. Christou and H. Day

J. Appl. Phys. 44, 3386 (1973); http://dx.doi.org/10.1063/1.1662771 (8 pages) | Cited 9 times

Online Publication Date: 9 October 2003

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The structure and thermal stability of bimetallic Au‐Ta films has been studied by x‐ray diffraction, electrical resistivity, and by microscopy. Annealing above 450 °C forms a TaAu compound. The growth of the TaAu layer at the Au☒Ta interface follows a parabolic rate law. A low‐temperature depletion of gold at tantalum grain boundaries occurs below 350 °C with an activation energy of 0.41 eV. Grain growth occurs with an activation energy of 0.50–0.55 eV for gold and 0.40–0.50 eV for tantalum. Thermal stresses of the order of 1.0×109 dyn∕cm2 exist in the sputtered films.

Elastic properties of tantalum over the temperature range 4–300 K

R. G. Leisure, D. K. Hsu, and B. A. Seiber

J. Appl. Phys. 44, 3394 (1973); http://dx.doi.org/10.1063/1.1662772 (4 pages) | Cited 23 times

Online Publication Date: 9 October 2003

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The elastic properties of tantalum have been investigated over the temperature range 4.2–300 K. The values of the adiabatic elastic constants C11, C44, and CL=(1∕2) (C11+C12+2C44) at 4.2 K in units of 1012 dyn∕cm2 are, respectively, 2.70, 0.873, and 3.02. The Debye temperature was calculated from the elastic constants and found to have the value of 265 K at low temperature. The elastic constants become temperature independent at low temperatures and approach linear behavior at high temperatures. In contrast to the normal behavior of the elastic constants, nuclear acoustic resonance experiments show anomalous line broadening.

Verification of sensitivity enhancement factors for cw ultrasonic resonators

Joseph S. Heyman and J. G. Miller

J. Appl. Phys. 44, 3398 (1973); http://dx.doi.org/10.1063/1.1662773 (3 pages) | Cited 4 times

Online Publication Date: 9 October 2003

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Sensitivity enhancement factors predicted by an analysis of cw ultrasonic resonator systems using the propagating wave model are verified. Absorption and dispersion sensitivity factors were obtained by producing small changes in the acoustic properties of a CdS resonator with a light beam.

Thermal conductivity of CdSxSe1−x solid solutions

A. Aresti, A. Congiu, P. Manca, and A. Spiga

J. Appl. Phys. 44, 3401 (1973); http://dx.doi.org/10.1063/1.1662774 (3 pages)

Online Publication Date: 9 October 2003

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The thermal conductivity of CdSxSe1−x (0≤x≤1) solid solutions was measured between 100 and 300 °K. Analysis of the experimental data shows that normal processes played an important role in phonon scattering, and that mass and strain fluctuations equally contribute to thermal resistivity in the temperature range studied.

Defect dragging contribution to dislocation damping in electron‐irradiated high‐purity polycrystalline aluminum

S. L. Seiffert, H. M. Simpson, and A. Sosin

J. Appl. Phys. 44, 3404 (1973); http://dx.doi.org/10.1063/1.1662775 (7 pages) | Cited 12 times

Online Publication Date: 9 October 2003

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A study by internal friction and Young's modulus measurements has been made on high‐purity polycrystalline aluminum of the effects on dislocation damping by 1‐MeV electron irradiation in the temperature range 78–360 °K. These measurements confirm the presence of an internal friction ``peaking'' effect in aluminum in agreement with the defect dragging model proposed by Simpson and Sosin. In particular it is observed that during electron irradiation and for specific mechanical and thermal histories of the sample, the logarithmic decrement δ increases and later decreases. The increase is found to be generally strain amplitude independent and to be highly structure dependent, disappearing after a suitable high‐temperature anneal. Simultaneous modulus measurements show little or no effect due to electron irradiation between 78 and 240 °K, but the modulus increases monotonically for irradiations above 240 °K. The corresponding point‐defect kinetics exhibit a complex annealing behavior.

Equivalent diffusion effect due to the dielectric relaxation effect

Toshikazu Kodama, Shinya Hasuo, and Tadahiro Ohmi

J. Appl. Phys. 44, 3411 (1973); http://dx.doi.org/10.1063/1.1662776 (8 pages)

Online Publication Date: 9 October 2003

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The transport of a sheet of excess carriers in a conducting material having two types of mobile carriers is described in a small‐signal approximation. It is shown that the carriers exhibit an equivalent diffusion in the drift direction due to the dielectric relaxation effect even in the absence of thermal diffusion, and that the total effective diffusion coefficient is given by the sum of the thermal diffusion coefficient and the two‐carrier diffusion coefficient.

X‐ray K absorption edges of alloys. IV. Mn solid solutions with Cu, Ni, Co, and Fe

Douglas M. Pease and Leonid V. Azároff

J. Appl. Phys. 44, 3419 (1973); http://dx.doi.org/10.1063/1.1662777 (4 pages) | Cited 2 times

Online Publication Date: 9 October 2003

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The x‐ray K absorption spectra of the constituent atoms in fcc solid solutions of Mn in Cu, Ni, Co, and Fe show systematic changes taking place with increasing manganese concentration which it is not possible to explain in terms of the rigid‐band model for alloys. A decline in the initial rise in absorption with increasing Mn content is observed for all absorption edges except for Mn in Mn☒Fe solid solutions, in which case an increase takes place. A tentative explanation, based on hybridization of the outer states upon alloying, is proposed for Mn☒Cu and Mn☒Ni alloys.

Scanning electron microscope observations of the effects of discharges on polyethylene

C. Mayoux and Bui Ai

J. Appl. Phys. 44, 3423 (1973); http://dx.doi.org/10.1063/1.1662778 (2 pages) | Cited 8 times

Online Publication Date: 9 October 2003

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The surface of sheets of polyethylene was studied by means of a scanning electron microscope in order to compare the effects of corona discharges and those of the constituents of the discharge, i.e., uv radiation and electrons and O+ ions of low energy. The deterioration produced by the O+ ions resembles that produced by the discharge, and the deterioration produced by the electrons and the uv radiation does not. This difference tends to confirm infrared results and the assumption that the ions concentrated at the tip of a discharge erode the surface of the insulating material.

Scattering by water waves generated by a moving pressure point

R. H. Ott, G. A. Hufford, and A. Q. Howard

J. Appl. Phys. 44, 3425 (1973); http://dx.doi.org/10.1063/1.1662779 (4 pages)

Online Publication Date: 9 October 2003

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An analysis for scattering of scalar waves in air by a wake on the surface of water is developed. The wake on the water surface is generated as a concentrated pressure point travels over the free water surface. The wake has characteristics resembling a diffraction grating. The grating produces maximum constructive interference (resonance) in the backscattered wave under certain conditions. At resonance the scalar wavelength, water wavelength, and angle of incidence satisfy a simple geometrical condition.

Time and frequency behavior of sound waves thermally induced by modulated laser pulses

H. Eichler and H. Stahl

J. Appl. Phys. 44, 3429 (1973); http://dx.doi.org/10.1063/1.1662780 (7 pages) | Cited 18 times

Online Publication Date: 9 October 2003

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A temporally and spatially periodic light intensity distribution generates thermally in an absorbing sample a corresponding density variation which can be considered a standing sound wave. This thermal excitation of ultrasonic waves by modulated laser light has been investigated theoretically and experimentally. The sound waves were excited by two light beams of equal intensity derived from a mode‐locked ruby laser. The amplitude, velocity, and damping of the sound waves were examined by Debye Sears diffraction of argon laser pulses.

Prismatic dislocation loops on impurity precipitates in magnesium oxide single crystals

J. Narayan

J. Appl. Phys. 44, 3436 (1973); http://dx.doi.org/10.1063/1.1662781 (6 pages) | Cited 1 time

Online Publication Date: 9 October 2003

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Prismatic dislocation loops b = 1∕2〈101〉, were observed around impurity precipitates in as‐grown magnesium oxide single crystals with a high percentage of Ca and Al impurities. The loops lay on {101} slip planes. By using the results of the dynamical theory of electron diffraction including absorption and stereo microscopy, the majority of the loops were identified as b = 1∕2〈101〉 vacancy type. The possible chemical form of these impurities is discussed in view of the nature of the dislocation loops.

Misfit dislocations in (110), (112), and (113) homoepitaxial silicon crystals

Masao Tamura and Yoshimitsu Sugita

J. Appl. Phys. 44, 3442 (1973); http://dx.doi.org/10.1063/1.1662782 (3 pages) | Cited 3 times

Online Publication Date: 9 October 2003

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Misfit dislocations generated in (110), (112), and (113) silicon p‐on‐p+ epitaxial wafers are investigated through x‐ray topography. Dislocations observed are of mixed type and arranged along the intersection of the four {111} planes with the specimen surface. The dislocations are formed by slip to relieve the interfacial shear resulting from the misfit.

Propagation of stress wave with plastic deformation in metal obeying the constitutive equation of the Johnston‐Gilman type

S. Kuriyama and K. Kawata

J. Appl. Phys. 44, 3445 (1973); http://dx.doi.org/10.1063/1.1662783 (10 pages) | Cited 2 times

Online Publication Date: 9 October 2003

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Many theories have been proposed for the propagation of stress waves in metals. They are classified into three types by the constitutive equation; that is, the Kármán‐type theory, the Malvern‐type theory, and the Cristescu‐type theory. However, these proposed theories are not sufficient to explain certain facts which are found in the impact test of a thin rod consistently. For example, they fail to explain how the front of the stress wave always travels with the elastic‐wave velocity even in material prestressed into the plastic region, and the plateau of the uniform plastic strain remains in the neighborhood of the impact end. Therefore, in this paper, the authors apply the Johnston‐Gilman‐type constitutive equation to the theory of stress‐wave propagation and study the propagation of the stress wave produced in a thin rod by an impact of a long duration. The results of analysis account for the above‐mentioned two facts consistently, and, moreover, account for other phenomena which occur during the propagation of the stress wave not only in mild steel but also in other metals. From these results, the following conclusions are obtained. It is proper to use the Johnston‐Gilman‐type constitutive equation for the theory of the stress‐wave propagation in mild steel, and it seems that the forms of the constitutive equations of other metals may bear a close resemblance to that of the Johnston‐Gilman‐type constitutive equation. Though the Johnston‐Gilman‐type constitutive equation is based on the microscopic mechanisms of the dislocation theory, the theory of stress‐wave propagation in which it is used is essentially Malvern's theory, which has a noninstantaneous plastic response to an increase of the stress.

Electrode polarization of ionic conductors

J. Ross Macdonald

J. Appl. Phys. 44, 3455 (1973); http://dx.doi.org/10.1063/1.1662784 (4 pages) | Cited 7 times

Online Publication Date: 9 October 2003

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A theoretical analysis by Mitoff and Charles of electrode processes for an ionic material is criticized and corrected. These authors introduce three separate capacitances into their equivalent circuit where only one need appear. This frequency‐dependent diffusion‐discharge capacitance is calculated incorrectly by Mitoff and Charles, and earlier relevant work is ignored. Partial blocking small‐signal theory is used to show that Mitoff and Charles's experimental results on three different ionic materials can quite possibly by understood using such an approach, contrary to these authors' expectations.

Volume charge distribution in carnauba wax electrets

David K. Walker and Oleg Jefimenko

J. Appl. Phys. 44, 3459 (1973); http://dx.doi.org/10.1063/1.1662785 (6 pages) | Cited 9 times

Online Publication Date: 9 October 2003

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Internal charge distribution in carnauba wax thermoelectrets was measured. It was found that substantial volume charges exist within the electrets. These charges form a characteristic permanent volume charge distribution which is essentially the same for all investigated (over 100) electrets regardless of the magnitude of the electric field used for polarizing the electrets, duration of polarization, electret age, surface charge, or storage conditions. The existence of this characteristic volume charge distribution indicates that the primary mechanism responsible for the electret effect in the carnauba wax thermoelectrets is a trapping of electric charges within the electret material rather than a permanent microscopic polarization of the material.

Kinetics of WSi2 formation in the thin‐film system W∕PtSi∕Si

A. K. Sinha and T. E. Smith

J. Appl. Phys. 44, 3465 (1973); http://dx.doi.org/10.1063/1.1662786 (5 pages) | Cited 9 times

Online Publication Date: 9 October 2003

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Alloying kinetics data on thin‐film materials systems of interest in large‐scale integration (LSI) technology are useful in the design of high‐temperature processing schemes. In the present work, we have investigated the kinetics and mechanism of WSi2 formation in the thin‐film system W∕PtSi∕Si, which is encountered in the Ohmic contact and Schottky barrier areas of silicon integrated circuits. In situ x‐ray diffractometer measurements were carried out on various thin‐film samples in the temperature range 690–840 °C. All the samples consisted of 2000‐Å W film on 900‐Å PtSi on 10‐mils‐thick n‐type (100) Si doped with arsenic to a resistivity of 10 Ω cm. The amount of WSi2 formed was found to be equal to the amount of W consumed, indicating that an excess of Si atoms (diffusing species) is present at the reaction interface. The rate of transformation of W to WSi2 first increases with time and then it decreases. The data can be represented in terms of the generalized kinetic law: x = 1‐exp[−K(T)tn], where x is the volume fraction of W transformed, K(T) is a temperature‐dependent rate constant, t is time, and the index n is experimentally found to be equal to [inverted lazy s]1.35 in most cases of W∕PtSi∕Si samples annealed between 690 and 840 °C. A relatively high thermal activation energy of [inverted lazy s]4.4 eV∕mole was deduced from an Arrhenius plot of half‐time for transformation vs reciprocal of the annealing temperature. A comparison of the present results with those available on a W☒Si thin‐film system indicates that an intermediate layer of PtSi substantially accelerates the rate of formation of WSi2 and that PtSi may be also affecting the thermodynamic processes involved in WSi2 formation. It is suggested that the WSi2 nucleation process may involve, simultaneously, creation of W☒Si bonds at the expense of Pt☒Si bonds and restoration of the latter by out‐diffusing silicon atoms. All the WSi2 nucleation sites at the W∕PtSi interface are probably saturated before appreciable growth occurs.

Thermal expansion of corundum structure Ti2O3 and V2O3

L. J. Eckert and R. C. Bradt

J. Appl. Phys. 44, 3470 (1973); http://dx.doi.org/10.1063/1.1662787 (3 pages) | Cited 11 times

Online Publication Date: 9 October 2003

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The thermal expansion coefficients of the corundum structure oxides Ti2O3 and V2O3 were measured by elevated‐temperature x‐ray diffraction techniques, the former to 300 °C and the latter to 1000 °C. Compared with corundum, both of these oxides exhibit deviations in their thermal expansion behavior which may be attributed to electronic interactions of the transition metal cations.

K x‐ray spectra and electronic band structure of MnP

Hiroo Nakamori, Kenjiro Tsutsumi, and Chikara Sugiura

J. Appl. Phys. 44, 3473 (1973); http://dx.doi.org/10.1063/1.1662788 (3 pages) | Cited 1 time

Online Publication Date: 9 October 2003

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The Kβ5 emission and K absorption spectra of Mn in MnP are obtained with a two‐crystal spectrometer and a 50‐cm bent‐crystal spectrograph, respectively. The Kβ5 spectrum consists of a main band and a subband. The high‐energy edge of the Kβ5 band coincides with the K absorption edge. This suggests that MnP is a metallike compound. The obtained spectra of MnP are compared with the K spectra of metallic manganese, the P K absorption spectrum of MnP, and the energy‐band structure of MnP. The main band and the subband in the Kβ5 emission spectrum correspond to the filled 3d bands of manganese and the 3p band of phosphorus, respectively. The first and the second maxima in the K absorption spectrum correspond to the empty 3d bands (related to the eg orbitals containing some s and p character) and 4p band of Mn, respectively.

Electrical and mechanical features of the platinum silicide‐aluminum reaction

H. H. Hosack

J. Appl. Phys. 44, 3476 (1973); http://dx.doi.org/10.1063/1.1662789 (10 pages) | Cited 37 times

Online Publication Date: 9 October 2003

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The electrical and mechanical features of a thermally induced interaction between platinum silicide and aluminum have been investigated. It has been found that a diffusion‐controlled reaction occurs between these two materials which results in conversion of platinum silicide to the intermetallic PtAl2. The activation energy for this process is found to be 0.77 eV. As platinum silicide Schottky diodes with aluminum contacts are sintered for increasing time periods, this reaction propagates to the platinum silicide‐silicon interface and the effective barrier height of the metal‐semiconductor junction is observed to drop sharply to a value below that of aluminum‐silicon Schottky diodes. As longer sinter cycles are performed the effective barrier height rises to a value characteristic of aluminum‐silicon contacts. This effect is shown to be a result of diffusion of aluminum through the reacted material and the formation of an essentially aluminum‐silicon contact at the silicon substrate. The mechanical features of the platinum silicide‐aluminum reaction observed on test devices are correlated with the electrical effects of this reaction noted on Schottky diodes.

Measurement of resistivity change by a mutual inductance method

A. J. Hamdani

J. Appl. Phys. 44, 3486 (1973); http://dx.doi.org/10.1063/1.1662790 (4 pages) | Cited 4 times

Online Publication Date: 9 October 2003

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The resistivity of a nonferromagnetic conductor can be deduced from the change in mutual inductance between two coils when the sample is inserted. A method is described for measuring mutual inductance over a range of frequencies and this can be used to detect change in resistivities of the order of ± 10−13 Ω cm.

Dependence of xerographic discharge characteristics on carrier mobilities

I. Chen, R. L. Emerald, and J. Mort

J. Appl. Phys. 44, 3490 (1973); http://dx.doi.org/10.1063/1.1662791 (6 pages) | Cited 5 times

Online Publication Date: 9 October 2003

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The effects of variations in carrier mobility and its field dependence on the xerographic discharge characteristics of a photoreceptor have been explored theoretically. Particular emphasis has been placed on the dependence of optimum exposure to reach optimum contrast potential and the latter values on mobility. The discharge characteristics are divided into three categories: (i) flash exposure where the exposure time is much shorter than the carrier transit time, (ii) emission‐limited discharge which is realized by higher mobility photoreceptors, and (iii) space‐charged‐perturbed or space‐charge‐limited discharge which is seen in low‐mobility photoreceptors. It is shown that in the latter case the optimum contrast potential is dependent on the time of observation (synonomous with development time).

Doubly charged ions in decaying plasmas in neon and argon

F. J. de Hoog and H. J. Oskam

J. Appl. Phys. 44, 3496 (1973); http://dx.doi.org/10.1063/1.1662792 (4 pages) | Cited 3 times

Online Publication Date: 9 October 2003

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Doubly charged ions were observed during the decay period of plasmas produced in neon as well as in argon at reduced gas pressures ranging from 0.14 to 1 Torr. The measured time dependence of both the Ne2+ ion density and the Ar2+ ion density were corrected for the effect of diffusion cooling of the electrons. The reaction rate constant for the partial charge exchange reaction Ne2++Ne→Ne++Ne+ was found to be k=(9 ± 2) × 10−14 cm3 sec−1. For the reaction rate of the similar reaction in argon, only an upper limit could be obtained. The value of the mobility of Ne2+ in neon was found to be μ(Ne2+)=6 ± 1 cm2∕V sec. The value of the mobility of Ar2+ in argon was consistent with previously published data.

Fresnel region fields produced by circular loops and annular slots antennas

Guillermo Gonzalez and Manuel A. Huerta

J. Appl. Phys. 44, 3500 (1973); http://dx.doi.org/10.1063/1.1662793 (5 pages)

Online Publication Date: 9 October 2003

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Exact closed‐form expressions for the Fresnel region electric and magnetic fields of circular loop and annular slot antennas are given in terms of the functions
math
and
math
,where ‐ ∞ < σ < ∞ and 0 ≤ γ ≤ 1∕2. For a circular loope antenna with a constant current distribution the Fresnel region fields are obtained in terms of the functions qn (σ,γ)=fn (σ,γ)+ien(σ,γ), with n =0,1, and 2, and for a cosine current distribution the Fresnel region fields are obtained in terms of the functions qn(σ,γ), with n =0,1,2,3, and 4. The magnetic field of an annular slot antenna excited by a constant voltage is expressed exactly in terms of an infinite series involving the functions qn (σ,γ). The Fresnel region magnetic field of the annular slot antenna is simply given in terms of q1(σ,γ). The functions qn(σ,γ) permitted a simple evaluation of the electric and magnetic field strength in the Fresnel region. The functions qn(σ,γ) for n =0,1,2,3, and 4 are tabulated for values of σ=0.5, 1, 2, 5, 10, 25, and 50 and values of γ from 0.01 to 0.5.

Low‐frequency flute instabilities of a bounded plasma column

T. D. Rognlien

J. Appl. Phys. 44, 3505 (1973); http://dx.doi.org/10.1063/1.1662794 (8 pages) | Cited 30 times

Online Publication Date: 9 October 2003

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A study is made of the stability of quasineutral low‐frequency (ω ≪ ωci) flute waves in a low‐β collisionless plasma column immersed in a uniform axial magnetic field. The column has a Gaussian number density profile and a dc radial electric field. The differential equation which describes the waves is solved both analytically and numerically for the eigenfrequencies and eigenfunctions. For the case of uniform rotation of the column, analytical solutions are obtained to determine the properties of a column bounded by a conducting cylinder. The instability is a centrifugal flute wave for this case. The boundary can be stabilizing or destabilizing for the m = 1 azimuthal mode, depending on its location, while for all other modes, the boundary is stabilizing. For a nonuniformly rotating column, the effects of gradual shear and abrupt shear are considered using numerical solutions. By following the evolution of these modes as the profiles are changed continuously, a unified picture of their behavior is developed. Again the behavior of the m = 1 mode is found to be different from that of the higher‐order modes, as illustrated by the m = 2 mode. The m = 1 mode is quite sensitive to the rotation of the column near the boundary, while the m = 2 mode depends more on an average over the column. Also, for abrupt shear, the m =2 mode evolves into a Kelvin‐Helmholtz instability, while the m = 1 mode does not.
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