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J. Appl. Phys. 44, 1913 (1973); http://dx.doi.org/10.1063/1.1662479 (2 pages)
Observation of misfit dislocations in GaP☒GaAs heterojunctions
(Received 13 September 1972)
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Add to FacebookTransmission electron microscope observations have been made on vapor‐grown epitaxial GaP films on Ga (111) faces of GaAs substrates. The epitaxial films contained an ordered array of dislocation networks running parallel to three sets of 〈110〉 directions at the interface. It is believed that these dislocations in the interface region result from a partial accommodation of the lattice mismatch between GaP and GaAs.
© 1973 American Institute of Physics
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G. O. Krause and E. C. Teague, Appl. Phys. Lett. 10, 251 (1967)APPLAB000010000009000251000001.
M. S. Abrahams, L. R. Weisberg, and J. J. Tietjen, J. Appl. Phys. 40, 3754 (1969)JAPIAU000040000009003754000001.
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