In a recent note, Goronkin treats the problem of Ohmic vs space‐charge‐limited currents in high‐resistivity semiconductor materials. He arrives at the conclusion ``that it is possible to select a material that will carry only space‐charge‐limited current when it conducts at all''. For GaAs, this condition should hold for a doping n < 2×1010 electron∕cm3. This assertion would be significant for proposed nonlinear devices operating at very low voltages, such as 5 mV, predicted by Goronkin. The assertion pertains also to a new régime of semiconductor behavior, termed ``relaxation case'' by van Roosbroeck and Casey, who find a range of linear current∕voltage relation up to 10 V in GaAs with only 5 × 107 electron∕cm3. This note shows that Goronkin's paper contains errors of many orders of magnitude and that his results are invalid.