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1 Jan 1967

Volume 38, Issue 1, pp. 1-424

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Estimate of Extrinsic Stacking‐Fault Energies from Dislocation Configurations

W. F. Hartl, R. DeWit, and R. E. Howard

J. Appl. Phys. 38, 1 (1967); http://dx.doi.org/10.1063/1.1708954 (4 pages) | Cited 6 times

Online Publication Date: 29 June 2004

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In this paper we use straight‐line models of observed extrinsic nodes to estimate extrinsic stacking‐fault energies. Using isotropic elasticity theory and neglecting interactions, we find simple expressions for the energy in terms of the inscribed radii of the nodes. We apply the results to observed extended nodes in a silver—8 at.% tin alloy and find a ratio of extrinsic to intrinsic stacking‐fault energy of about 3.

Optical and Electrical Properties of Epitaxial and Diffused GaAs Injection Lasers

M. H. Pilkuhn and H. Rupprecht

J. Appl. Phys. 38, 5 (1967); http://dx.doi.org/10.1063/1.1709010 (6 pages) | Cited 22 times

Online Publication Date: 29 June 2004

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GaAs injection lasers were prepared by an epitaxial solution growth method and their properties compared with those of diffused junctions. The optical gain factor β was up to a factor of 7 higher for the epitaxial diodes at 300°K. This resulted in threshold current densities as low as 26 000 A∕cm2 (3.8×10−3 cm length) at 300°K. At 77°K, gain factor and loss numbers were similar for the two laser types. The spontaneous line‐width of the epitaxial lasers was unusually large (∼300 Å at 77°K) and increased with decreasing junction voltage. The internal quantum efficiency of epitaxial diodes drops from 100% at 4.2°K to 40% at 300°K. The vertical beam spread was found to be between 20°–30° half‐width at 77°K as well as at 300°K. Diffused diodes frequently show a delay between the current pulse and the stimulated emission of up to 30 nsec, dependent on the current value at higher temperatures. No such delay was observed in epitaxial lasers.

Existence and Origin of a Polarization Threshold Field in Bismuth Titanate

Dale L. Hamilton

J. Appl. Phys. 38, 10 (1967); http://dx.doi.org/10.1063/1.1708938 (3 pages) | Cited 5 times

Online Publication Date: 29 June 2004

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A new method is proposed to demonstrate the existence of a true polarization threshold field in materials that demonstrate ferrielectric properties. The detection of small changes in the Bragg diffraction angles of a diffracter x‐ray beam has been used to show the existence of a true polarization threshold field in one such material, namely bismuth titanate (Bi4Ti3O12). It is shown that the x‐ray diffraction method effectively establishes the polarization threshold field of bismuth titanate at 3 kV∕cm. This value of polarization threshold field agrees with that found previously using direct electrical methods. Prior to this work, the demonstration of a true polarization threshold field has been shown only by direct electrical methods.

Theory of Thermionic Converter Extinguished‐Mode Operation with Applications to Converter Diagnostics

Daniel R. Wilkins and Elias P. Gyftopoulos

J. Appl. Phys. 38, 12 (1967); http://dx.doi.org/10.1063/1.1708942 (7 pages) | Cited 9 times

Online Publication Date: 29 June 2004

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An analysis of thermoionic converters operating in the extinguished mode is presented. Expressions for the forward and reverse saturation output current densities, and for the open circuit voltage are derived for the first time from a single set of transport equations and boundary conditions. Agreement between theoretical and experimental results is established. It is shown that the output current density cannot exceeed a certain upper limit which depends only upon the emitter temperature and the interelectrode spacing, and is independent of the emitter work function and the cesium pressure. It is shown that, under certain operating conditions, measurements of the forward and reverse saturation output‐current densities and of the open circuit voltage can be used to infer values of the emitter temperature, emitter work function, collector work function, and electron and ion mobilities.

Finite‐Strain Elastic—Plastic Theory with Application to Plane‐Wave Analysis

E. H. Lee and D. T. Liu

J. Appl. Phys. 38, 19 (1967); http://dx.doi.org/10.1063/1.1708953 (9 pages) | Cited 157 times

Online Publication Date: 29 June 2004

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In the generation of plane waves in metal plates by detonation of contact explosives, the pressures reached can be sufficiently high to produce finite elastic and plastic strain components, and appreciable changes in temperature due to thermomechanical coupling effects. A theory of elastic—plastic deformation is developed to include these conditions. Finite elastic and plastic deformations are represented in terms of the initial and final configurations of the body, and an unstressed configuration subject only to plastic flow. In general, this configuration cannot be represented by a continuous displacement function. The analysis of the kinematics of these three states is carried out for general deformation history. The discussion of the application of finite deformation thermoelastic theory is limited to the conditions in a plane wave with fixed principal directions. Plasticity theory with the consideration of variable temperature is also restricted to the plane‐wave situation. The influence of the thermodynamic irreversibility of plastic flow is included in an entropy production term which modifies the temperature variation. Application to the plane‐wave propagation problem is discussed.

Shock‐Wave‐Generated Plasmas as Light Sources for Optical Pumping

R. G. Buser, A. Papayoanou, and D. Ramm

J. Appl. Phys. 38, 28 (1967); http://dx.doi.org/10.1063/1.1708969 (7 pages)

Online Publication Date: 29 June 2004

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Electrodeless discharges in coaxial tubes, capable of holding a laser crystal in the center, have been studied to obtain a measure of the energy coupled into the tube, to understand the dynamical processes, and to quantitatively determine the radiation emitted by the tube. The energy coupling and emitted radiation have been found to depend on the voltage stored on the capacitor, the primary coil dimensions, the fill gas and fill‐gas pressure, and the tube dimensions. The dominant dynamical processes are those due to strong cylindrically imploding shock waves. Radiation emitted is found to be due to particles liberated from tube walls as well as that of the fill gas. Curves of radiation intensity vs wavelength, as well as spectral pictures and calculations of spectral matching coefficients, indicate the possibility of pumping very high powers into ruby crystals.

Analysis of the Negative Resistance Associated with the Semiconductor—Insulator—Semiconductor (SIS) Structure

J. Shewchun

J. Appl. Phys. 38, 35 (1967); http://dx.doi.org/10.1063/1.1708982 (7 pages) | Cited 2 times

Online Publication Date: 29 June 2004

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A new negative‐resistance device, the semiconductor—insulator—semiconductor or SIS structure, is analyzed. The effect is due to quantum‐mechanical current transmission through a thin insulator barrier and leads to an N‐shaped current—voltage characteristic similar to that of the tunnel or Esaki diode. A highly qualitative analysis using general current equations is used to predict the major characteristics. Among these is the fact that the height and shape of the potential barrier, as created by the insulator, influence the current—voltage characteristics significantly—the former controls the amount of diffusion current and the latter the shape of the tunnel‐current characteristic. Diffusion currents should be negligibly small as compared to those in the conventional tunnel diode because the barrier height is very high (∼5 eV) for most typical insulators. These and other features, such as wider adjustment of the negative‐resistance cutoff voltage through variation in impurity concentration, give the SIS structure enormous versatility in terms of current—voltage shape adjustment through material control. A crude calculation, using the Wannier formalism, is used to derive an expression for the current in a simple, closed analytic form. This analysis shows that, at low temperatures, the slope of current characteristic (dJ∕dVA) is a function of the insulator energy gap, ΔI, and will usually be less than that for the equivalent tunnel diode. The general conclusion reached is that realization of the SIS diode is perhaps just beyond the scope of current semiconductor technology. Nevertheless, if developed properly, this structure could conceivably find wide application in current MOS integrated circuits.

Theory of Ultrasonic Pulse Measurements of Third‐Order Elastic Constants for Cubic Crystals

Albert C. Holt and Joseph Ford

J. Appl. Phys. 38, 42 (1967); http://dx.doi.org/10.1063/1.1709006 (9 pages) | Cited 17 times

Online Publication Date: 29 June 2004

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The equations of motion for an elastic nonisotropic solid are reduced to a form useful for determination of third‐order elastic constants by means of ultrasonic pulse distortion measurements. Values of the coefficients in the reduced equations of motion are tabulated for two cubic materials. The tables are used to show that for cubic materials one should be able to measure C111, C112, and C166 with reasonable accuracy. An argument is given which shows that the equations of motion for a single plane wave in a cubic crystal depend on the five parameters C111, C112, C166, (2C144+C123), and (☒C144+C456) instead of all six third‐order elastic constants.

Electron Mobilities in SiC Polytypes

Lyle Patrick

J. Appl. Phys. 38, 50 (1967); http://dx.doi.org/10.1063/1.1709007 (3 pages) | Cited 12 times

Online Publication Date: 29 June 2004

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Electron‐scattering mechanisms in SiC polytypes are discussed. It is shown that the mechanism which limits mobility from 300° to 800°K in n‐type SiC is probably intervalley scattering (in relatively pure samples). The dependence of electron mass on polytype enables one to study the scattering mechanisms by a comparison of Hall mobilities in two polytypes.

Electron Mobility Measurements in SiC Polytypes

D. L. Barrett and R. B. Campbell

J. Appl. Phys. 38, 53 (1967); http://dx.doi.org/10.1063/1.1709008 (3 pages) | Cited 22 times

Online Publication Date: 29 June 2004

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Electron mobilities were measured in a number of n‐type SiC samples selected and prepared in such a way as to ensure that they were single polytype specimens of 6H, 15R, or 4H. In the purest samples from the same growth preparation the ratio of 15R to 6H mobilities was found to be about 1.7 with both polytypes having a temperature dependence of mobility near T−2.4 between 300° and 800°K. Room‐temperature mobilities of these specimens were about 300 and 500 cm2 V−1 sec−1, respectively, for 6H and 15R. Only two 4H samples were measured, but these showed even higher mobilities than 15R polytype samples.

Ferroelectric Properties of PbZrO3☒BiFeO3 Solid Solutions

Robert Gerson, Pen‐chu Chou, and W. J. James

J. Appl. Phys. 38, 55 (1967); http://dx.doi.org/10.1063/1.1709009 (6 pages) | Cited 13 times

Online Publication Date: 29 June 2004

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Solid solutions of BiFeO3 and PbZrO3 were investigated for crystallographic and dielectric properties. A new pseudocubic perovskite phase was found, which has been tentatively indexed as orthorhombic with the same unit cell as PbZrO3 but with dielectric properties characteristic of a ferroelectric substance. The Curie point in this series of solid solutions has a minimum of about 155°C at a composition of about (PbZrO3)0.80 (BiFeO3)0.20, which at room temperature lies on the boundary between the orthorhombic antiferroelectric and the pseudocubic ferroelectric phases. This composition has a relative dielectric constant of 800 at room temperature and shows appreciable dielectric nonlinearity. The Curie point rises to about 400°C for (PbZrO3)0.50 (BiFeO3)0.50 and is extrapolated to about 900°C for pure BiFeO3, in agreement with previous data from similar solid solutions. It is felt that this is additional evidence that the distortion from cubic symmetry in BiFeO3 may be of ferroelectric origin.

Luminescence from GaP containing Silicon

M. R. Lorenz and M. H. Pilkuhn

J. Appl. Phys. 38, 61 (1967); http://dx.doi.org/10.1063/1.1709011 (3 pages) | Cited 23 times

Online Publication Date: 29 June 2004

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An emission line in GaP of previously unexplained origin peaking at about 1.96 eV (6300 Å) at 77°K was studied in electroluminescence of forward biased p‐n junctions and in photoluminescence. We attribute this band to the presence of Si. The peak energy position of the 1.96‐eV band is dependent on the identity of the dominant shallow donors, thereby indicating that the deep center is an acceptor. The results indicate that Si substitutes at Ga sites and acts as a shallow donor. At high‐electron concentrations, Si causes the appearance of an acceptor with a level about 0.25 eV above the valence band. The dependence of current and light intensity on voltage was studied. The 1.96‐eV line has an external quantum efficiency at 77°K of up to 1.4×10−2 but is rapidly quenched with increasing temperature.

Spectrographic Measurements on an Arc Discharge

John Paul Barach

J. Appl. Phys. 38, 64 (1967); http://dx.doi.org/10.1063/1.1709012 (4 pages) | Cited 3 times

Online Publication Date: 29 June 2004

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An arc discharge of 60‐μsec duration and peak current of 2×104 A in an initial pressure of 3 Torr of helium was studied spectroscopically. Time resolution was obtained by Kerr cell shuttering a 1.5‐m spectrograph. The spectra were analyzed by Stark broadening and line‐to‐line intensity ratios. The arc was found to quickly evolve many times the initial density in wall and electrode materials, to decrease in degree of excitation after the first 10 μsec, and to lack thermodynamic equilibrium. The doubly ionized species were found to have roughly consistent temperatures of 7±1.5 eV and the singly ionized species 4±1.5 eV. The ratio between the two populations was more appropriate to excitation energies of 1 or 2 eV.

Electroviscous Fluids. I. Rheological Properties

Donald L. Klass and Thomas W. Martinek

J. Appl. Phys. 38, 67 (1967); http://dx.doi.org/10.1063/1.1709013 (8 pages) | Cited 116 times

Online Publication Date: 29 June 2004

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Electroviscosity is defined in this introductory paper as an essentially instantaneous reversible change in apparent viscosity when a fluid is subjected to an externally applied electric field. The electroviscous properties of silica and calcium titanate dispersions are typical of most electroviscous systems and were found to be a function of many parameters such as composition, shear rate, field strength, frequency, and temperature. When only one parameter is varied, electroviscous effects increase with increasing volume fraction of disperse phase, field strength, and temperature, but decrease with increasing shear rate and frequency. Electroviscosities are proportional to the square of the field strength and inversely proportional to the first power of the shear rate. Induced interfacial polarization on and near the particle surface and the resulting interactions between the polarized double layers, and the polarized double layers and particles are used to explain the electroviscous phenomenon.

Electroviscous Fluids. II. Electrical Properties

Donald L. Klass and Thomas W. Martinek

J. Appl. Phys. 38, 75 (1967); http://dx.doi.org/10.1063/1.1709014 (6 pages) | Cited 51 times

Online Publication Date: 29 June 2004

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The induced interfacial polarization mechanism invoked to explain electroviscosity requires a direct relationship between the rheological and electrical properties of an electroviscous system. Static and dynamic measurements of the electric and dielectric properties of electroviscous silica dispersions were made to study these relationships. An electrokinetic potential and conductivity and a small dc power output that depend upon shear rate were observed. Electroviscous fluids under shear exhibit the characteristics of small electric cells. Shear‐induced desorption of weakly held charge carriers out of the double layer is suggested to explain these effects.
On application of an external electric field, electroviscosity appears at the onset of current flow. Dielectric measurements under zero‐shear conditions show that the medium in contact with the disperse phase is essentially a low‐dielectric‐constant vehicle while the particles are composites having higher dielectric constants, thereby facilitating interfacial polarization. Anomalous dispersion occurs under zero‐shear conditions at low frequencies as expected on the basis of the proposed interfacial polarization mechanism. Simultaneous dielectric‐constant, loss, and electroviscosity measurements under shear conditions correlate with the effects of changing shear rate, field strength, temperature, and frequency. Increasing temperatures promote polarization while shear stresses transverse to the direction of the applied field perturb the field‐induced polarization. When an electroviscous dispersion is subjected to both mechanical shearing and an external electric field, a dynamic equilibrium is established between the rheological and electrical properties of the system.

Diffusion‐Induced Defects in Silicon. I

E. Levine, J. Washburn, and G. Thomas

J. Appl. Phys. 38, 81 (1967); http://dx.doi.org/10.1063/1.1709015 (7 pages) | Cited 34 times

Online Publication Date: 29 June 2004

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Dislocations introduced into the surface layers of silicon crystals by boron and phosphorus diffusion treatments of the type used in device manufacture were studied by transmission electron microscopy. Edge dislocation arrays were found for {110} and {111} surface orientations as was the case for previous observations on {100} specimens. The maximum density of dislocations was located at a depth corresponding to the steepest solute concentration gradient. The observations suggest that the glide mechanism for motion of edge dislocations into a crystal, previously proposed for diffusion into a {100} surface, does not operate for a {111} surface orientation. Most of the edge dislocations making up the accommodation network for the latter orientation apparently had moved into the crystal nonconservatively.

Diffusion‐Induced Defects in Silicon. II

E. Levine, J. Washburn, and G. Thomas

J. Appl. Phys. 38, 87 (1967); http://dx.doi.org/10.1063/1.1709016 (9 pages) | Cited 18 times

Online Publication Date: 29 June 2004

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The defect substructure produced by a double diffusion of boron and phosphorus into a silicon wafer has been studied by transmission electron microscopy. Specimens were examined at all stages in the diffusion and at all important levels in the final n‐p‐n transistor wafer for both {111}‐ and {110}‐oriented wafers. Similar specimens in the {112} orientation were examined at the emitter surface only.
Diffusion‐induced dislocations and precipitates were observed at the emitter surface in all orientations. No defects were found at other levels in the doubly diffused wafers except for {110} foils in which long dislocations capable of glide on the inclined {111} planes were observed at the emitter base junction.
The precipitates were in the form of thin platelets which produced displacement fringes parallel to their intersection with the surface (g⋅R contrast) and parallel moiré fringe contrast. In addition they were strongly attacked by both HF and HNO3 solutions. Diffraction patterns from the precipitates were indexed as from a base‐centered orthorhombic structure with a=6.3, b=3.8, and c=6.75 Å. The orientation relationship with the silicon matrix was [111] Si ‖ [011]p. The thin platelets appeared to be a partially coherent precipitate with an associated misfit vector of ∼⅓[111] such that the platelets compressively stressed the matrix. This compressive stress acts to partially relieve the diffusion‐induced tensile stress normal to the habit plane, and so the operating planes are those which are most perpendicular to the diffusion front so as to have the greatest possible resolved compressive stress in the diffusion front.

Electrodeless Determination of Semiconductor Conductivity from TE01°‐Mode Reflectivity

K. S. Champlin, J. D. Holm, and G. H. Glover

J. Appl. Phys. 38, 96 (1967); http://dx.doi.org/10.1063/1.1709017 (3 pages) | Cited 15 times

Online Publication Date: 29 June 2004

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Microwave conductivity of semiconductors determined from transmission or reflection of the dominant mode of rectangular waveguide may contain a significant error caused by the impedance of the contact between the sample and the broad waveguide wall. This error increases with increasing bulk conductivity. The present paper describes a technique which eliminates this source of error by utilizing the TE01° mode of circular waveguide in a ``reflection coefficient bridge.'' Measurements of intrinsic germanium at 48 GHz show no contact influence over the conductivity range between 2 and 2×103 mho∕m. In contrast, the conductivity measured with a conventional rectangular waveguide transmission bridge saturates at about 50 mho∕m.

Scanning Electron Diffraction Observations on Diffuse Inner Rings from Very Thin Vapor‐Deposited Films

P. N. Denbigh and D. B. Dove

J. Appl. Phys. 38, 99 (1967); http://dx.doi.org/10.1063/1.1709018 (4 pages) | Cited 5 times

Online Publication Date: 29 June 2004

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Observations on small‐angle diffraction rings from very thin vapor‐deposited layers have been carried out using a direct‐recording electron diffractometer. The rings are due to the island structure of the deposited layers. A detailed correlation has been made between ring location and island∕island interferences by statistical evaluation of electron micrographs. (The occurrence of inner diffraction rings from various types of specimens was first noted by Mahl and Weitsch using an electron‐microscope technique.)

The Order‐Disorder Transformation in Cu3Au at High Pressure

M. C. Franzblau and R. B. Gordon

J. Appl. Phys. 38, 103 (1967); http://dx.doi.org/10.1063/1.1708937 (8 pages) | Cited 1 time

Online Publication Date: 29 June 2004

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The order‐disorder transformation in the alloy Cu3Au has been studied at pressures ranging up to 21 kbar by means of electrical‐resistance measurements made while the sample is at high temperature and under pressure. The rate of change of the critical temperature with pressure is 2.1°K∕kbar from 7 to 21 kbar. The kinetics of the order transformation below Tc are adequately described by the homogeneous reaction rate equation and an activation volume of 6.8 cm3∕mole of atoms. The magnitude of this activation volume indicates that the formation of vacancies on the gold sublattice is the rate‐limiting step in the homogeneous ordering process.

A Light‐Activated Semiconductor Switch

D. Meyerhofer, A. S. Keizer, and H. Nelson

J. Appl. Phys. 38, 111 (1967); http://dx.doi.org/10.1063/1.1708939 (13 pages) | Cited 2 times

Online Publication Date: 29 June 2004

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A GaAs p‐n‐i‐n diode which operates as a light‐activated light‐coupled switch is described. The i‐region is compensated semi‐insulating GaAs and is obtained by diffusing Cu, Fe, or Cr into low‐doped n‐GaAs. The electrical and optical properties of this diode have been studied as well as its switching behavior. The diode exhibits a current‐controlled negative resistance region with ratio of off‐ to on‐resistance as high as 106. Turn‐on voltages range from 10 to 200 V, and the turn‐on time can be made as short as 10 nsec with sufficient overvoltage. The current is limited in the high‐resistance mode by intrinsic or one‐carrier space‐charge‐limited conduction in the i region. At higher currents the light emission at the p‐n junction causes photoconduction in the i region which is enhanced by the trapping of holes at acceptor levels. In the low‐resistance mode all the traps (approximately 1016 cm−3) are filled and remain that way because of the high efficiency of light emission from the junction at the high currents. A model is developed which semiquantitatively describes both the static and dynamic properties of the diode.

Emission Studies of Mercury in the Negative Glow of a Hg☒H2 Discharge

M. Silver and R. H. Neusel

J. Appl. Phys. 38, 123 (1967); http://dx.doi.org/10.1063/1.1708940 (6 pages)

Online Publication Date: 29 June 2004

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The relative intensities of the 4358, 3651, and 3131 Å radiation and the ratios of intensities of the 5461, 4358, 3651, 3131, 3125, and 2967 Å radiation were studied experimentally as a function of position in the negative glow of a Hg☒H2 dc abnormal glow discharge. These results are displayed in graphical form under conditions of varying H2 pressure. Extrapolations of the relative density ratios of the 63D3,2,1 and 73S1 states were obtained from these intensity measurements. Quenching of the Hg 63P2,1,0 states by H2 in the negative glow region is discussed.

Indeterminacy of the Analytic Method for Calculating Molecular Field Coefficients in Ferrimagnets

Peter D. Gianino and Neil Grossbard

J. Appl. Phys. 38, 129 (1967); http://dx.doi.org/10.1063/1.1708941 (4 pages) | Cited 2 times

Online Publication Date: 29 June 2004

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It is demonstrated that instead of yielding unique values of α and β for yttrium iron garnet (YIG) and lithium ferrite, the analytic method of calculating molecular field coefficients in ferrimagnets yields only one of many possible (α, β) pairs from a linearly related set. The magnitudes of the internal magnetic fields, total magnetic moment, and the two sublattice magnetic moments, computed from any of the possible coefficients, remain relatively unchanged even though (α, β) and n are extremely sensitive to the input parameters and number of experimental data points. It is shown how this manifold of (α, β) pairs can exist, how the pairs can be linearly related, and how an analytic expression for this dependency can be derived, using low‐temperature data. A procedure for testing whether the coefficients for other ferrimagnets can be uniquely determined is discussed. ``Best'' values of (α, β), obtained by minimizing a least‐squares percentage error, not only fall along a straight line but are in good agreement with those usually generated by the analytic method. The use of the ``linearity'' test in the X‐Y graph as a criterion for judging the appropriateness of the selected value of the Curie point is shown to be invalid.

Imperfections Due to Double Diffusions in Epitaxial Silicon

E. D. Jungbluth

J. Appl. Phys. 38, 133 (1967); http://dx.doi.org/10.1063/1.1708943 (8 pages) | Cited 5 times

Online Publication Date: 29 June 2004

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An investigation of imperfections due to selective‐area planar double diffusions of n‐ and p‐type impurities on epitaxial silicon has shown that elastic and inelastic lattice strain exists at the edges of oxide windows. This strain may act as nucleation sites for precipitating metallic impurities. High‐surface‐concentration emitter impurities (phosphorus) cause residual, inelastic strains at oxide edges, while base diffusions (boron) normally cause elastic lattice strains. X‐ray transmission topography reveals both elastic and inelastic strains. Surface reflection x‐ray topography is slightly more sensitive than x‐ray transmission topography for detecting defects due to shallow phosphorus diffusion. Chemical etching techniques delineate line defects which are unresolved by x‐ray techniques. The line defects are confined to the emitter area and extend in 〈110〉 and 〈112〉 directions. Differences in the results obtained by both x‐ray techniques are discussed in terms of defects observed by etching techniques.

Electrical Properties of Epitaxial Ge Films Deposited on (111) CaF2 Substrates

Billy W. Sloope and Calvin O. Tiller

J. Appl. Phys. 38, 140 (1967); http://dx.doi.org/10.1063/1.1708944 (9 pages) | Cited 22 times

Online Publication Date: 29 June 2004

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The temperature dependence of the Hall constant, resistivity, and Hall mobility was measured for Ge films deposited on polished (111) CaF2 substrates at substrate temperatures of 200°–700°C, deposition rates of 100–15 000 Å∕min, and for film thicknesses between 800 and 170 000 Å. For formation conditions which improved film structures, electrical properties likewise improved. For single‐crystal films the Hall constant and Hall mobility increased as the defect density decreased with increasing deposition temperature and decreasing deposition rate. Similarly, for films thicker than 4000 Å, as the density of defects intersecting the surface decreased with increasing thickness, the Hall constant and mobility increased. Hole‐carrier concentrations of 1016–1018 per cm3 and room‐temperature Hall mobilities of 100–1100 cm2∕V⋅sec were observed. The results indicate that defects are the source of acceptors and contribute significantly to scattering.
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