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1 Dec 1965

Volume 36, Issue 12, pp. 3693-3956

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Focal Properties of Isotope Separators using Azimuthally Invariant Magnetic Fields

T. W Whitehead

J. Appl. Phys. 36, 3693 (1965); http://dx.doi.org/10.1063/1.1713931 (4 pages)

Online Publication Date: 14 July 2004

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The ion optical properties of an azimuthally invariant magnetic field which are important in the electro‐magnetic separation of isotopes are considered. The solutions are limited to the case where the object and image are within the field. A method based on the principle of least action is used to find general expressions for the values of the coefficients in the field expansion that will produce midplane focus at any angle. The three‐dimensional motion of ions is considered with regard to isotope separations, and the general focal properties of inhomogeneous magnetic fields that satisfy the midplane image requirements are described.

Application of Electron and Optical Microscopy in Studying Laser‐Irradiated Metal Surfaces

K. Vogel and P. Backlund

J. Appl. Phys. 36, 3697 (1965); http://dx.doi.org/10.1063/1.1713932 (5 pages) | Cited 18 times

Online Publication Date: 14 July 2004

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Electron and optical microscopy were applied in studying laser‐irradiated metal surfaces. The preparation of carbon replica films of irradiated surfaces is described. A summary of observations from irradiated Ag, Al, Be, Cu, Pb, and low‐carbon steel is given. Microcraters of less than 10 μ diam were found to be an early stage in the development of radiation damage on laser‐irradiated metal surfaces. The observed surface structure is assumed to be of interest when interpreting experiments on the interaction of laser beams with metal surfaces.

Surface Dependence of Magnetostatic‐Mode Linewidths in Yttrium Iron Garnet

G. R. Jones

J. Appl. Phys. 36, 3702 (1965); http://dx.doi.org/10.1063/1.1713933 (2 pages)

Online Publication Date: 14 July 2004

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The observed linewidths of the magnetostatic modes of roughened spheres of yttrium iron garnet do not follow the expected simple dependence on the density of degenerate spinwave states. A theoretical explanation is presented of the apparently erratic differences between the linewidths of the low‐order magnetostatic modes. Semiclassical spinwave theory is used to calculate the coupling between the resonant mode and the degenerate spinwaves. Linewidths dependent on surface condition are calculated on the basis of typical values for the parameters to describe rough surfaces, and fit to experimental linewdiths. The calculated and observed linewidths are presented; the agreement between them is very good. The results are consistent with the general assumptions of the previous treatments, but in addition it is shown that it is necessary to include the field configuration of the magnetostatic modes in the calculation of surface‐dependent linewidths.

Pulse Propagation in Anisotropic, Randomly Inhomogeneous Media

G. C. Knollman

J. Appl. Phys. 36, 3704 (1965); http://dx.doi.org/10.1063/1.1713934 (12 pages) | Cited 1 time

Online Publication Date: 14 July 2004

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A theoretical study is conducted of plane‐harmonic narrow‐band pulse propagation in a statistically uniform but anisotropic transmission medium of weak, stationary refractive‐index fluctuation. Large‐scale inhomogeneities of arbitrary ellipsoidal shape are treated, with transmitter‐to‐receiver ranges taken as large compared with the longitudinal correlation length. Of interest is the influence of range, transmitter frequency, and degree of anisotropy on the pulse shape and intensity. Comparison is made between pulse transmission in isotropic and anisotropic random media, and special attention is given the low‐ and high‐frequency limits of the theory as well as certain extreme conditions of anisotropy. The general formulation is applied to the analysis of both an initially Gaussian and an initially rectangular pulse.

Measurement of Hot Carrier Diffusion Constant in Semiconductors

K. Okamoto, J. Nishizawa, and K. Takahashi

J. Appl. Phys. 36, 3716 (1965); http://dx.doi.org/10.1063/1.1713935 (7 pages) | Cited 7 times

Online Publication Date: 14 July 2004

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Measurements of the electric field dependence of the hole diffusion constant in n‐type germanium were made up to 2000 V∕cm at temperatures of 297°, 195°, and 77°K. A distinctive feature of our experiments was the attenuation‐rate measurements of sinusoidally modulated hole wave drifting along a filamentary specimen by the electric field supplied from a high‐voltage pulser. The resistivity of the specimen was 5.3 Ω⋅ cm and the hole diffusion constant was obtained which increased nearly in proportion to the two‐thirds power of the electric field above 50 V∕cm at 297°K and increased more rapidly at lower temperatures. For example, the result was Dp=900 cm2∕sec when the electric field intensity was 1000 V∕cm at 297°K.

Effect of Holes on the Elastic Constant C′ of Degenerate p‐Type Si

P. Csavinszky

J. Appl. Phys. 36, 3723 (1965); http://dx.doi.org/10.1063/1.1713936 (5 pages) | Cited 2 times

Online Publication Date: 14 July 2004

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A generalized theory of the dependence of the elastic constant C′ of heavily doped p‐type Si on hole concentration is presented. The strain dependence of the valence subband shifts is assumed to be an admixture of terms linear and quadratic in the strain. The theory accounts for the measured values of δC′=C′doped −C′pure and it is consistent with a constant value of the shear deformation potential constant Ξs′. This is an improvement over previous results, based on purely linear subband shifts in strain, where the interpretation of the experimental data required the assumption of a hole‐concentration‐dependent deformation‐potential constant.

Effect of Carrier Trapping on the Weinreich Relation in Acoustic Amplification

P. D. Southgate and H. N. Spector

J. Appl. Phys. 36, 3728 (1965); http://dx.doi.org/10.1063/1.1713937 (7 pages) | Cited 15 times

Online Publication Date: 14 July 2004

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The Weinreich relation between the acoustic absorption coefficient and the acoustoelectric field in semi‐conductors is found to be modified by carrier trapping. In the presence of dc fields, the acoustoelectric field and the absorption coefficient pass through zero at different values of drift field. The effects of the trapping are particularly important when the trapping time is of the same order as the acoustic‐wave period. The experimental evidence indicates that the above explanation for the effect of trapping is valid, with the dominant traps having a trapping time of about 10−9 sec. Some anomalies in the absorption were found which can be explained by the generation of a shear mode which does not interact with the carriers. Nonlinear interactions with this shear mode are found to occur at much lower power levels than those associated with second‐order effects in the theory of Hutson and White.

Basic Equations and Conservation Theorems for the Electrostriction Phonon Maser

H. A. Haus and Paul Penfield

J. Appl. Phys. 36, 3735 (1965); http://dx.doi.org/10.1063/1.1713938 (5 pages) | Cited 4 times

Online Publication Date: 14 July 2004

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Brillouin scattering of light by phonons and the phonon maser are usually described in terms of an approximate set of linearized equations. Here we give a more exact set of equations for a lossless polarizable fluid; only relativistic effects are disregarded. When these equations are linearized and higher order terms in the ratio of sound speed to light speed are disregarded, they reduce to the customary set of equations. The more exact equations permit the derivation of the law of conservation of energy with a simple physical interpretation. From these equations the Manley‐Rowe relations and other conservation laws also follow relatively easily.

Afterglow Studies in Noble‐Gas‐Hydrogen Mixtures

H. J. Oskam and V. R. Mittelstadt

J. Appl. Phys. 36, 3740 (1965); http://dx.doi.org/10.1063/1.1713939 (5 pages) | Cited 5 times

Online Publication Date: 14 July 2004

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The time dependence of the electron density during the afterglow period of plasma produced in helium‐hydrogen, neon‐hydrogen, and argon‐hydrogen mixtures was measured by means of the microwave cavity method. The time dependence was found to be exponential during the later part of the afterglow period for pressures up to about 25 Torr. The relevant time constant depended on the plasma excitation condition at all values of pressure in helium‐hydrogen mixtures, while this dependence was not observed in neon‐hydrogen mixtures at pressure above 12 Torr and was absent in argon‐hydrogen mixtures. The ion mobility values calculated from the measured ambipolar diffusion coefficients are 38±4 cm2∕V⋅sec for helium‐hydrogen, 17±1.0 cm2∕V⋅sec for neon‐hydrogen and 6.3±0.5 cm2∕V⋅sec for argon‐hydrogen mixtures.

Experimental Study of Gold‐Gallium Arsenide Schottky Barriers

F. A. Padovani and G. G. Sumner

J. Appl. Phys. 36, 3744 (1965); http://dx.doi.org/10.1063/1.1713940 (4 pages) | Cited 90 times

Online Publication Date: 14 July 2004

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Departures from the theoretical behavior of a Schottky barrier are reported in the case of gold on gallium arsenide. It is shown that the empirical introduction of a single temperature‐independent parameter takes care of all the observed departures.

Second‐Harmonic Generation in Large g‐Factor Ferrimagnets

B. A. Auld and R. C. LeCraw

J. Appl. Phys. 36, 3747 (1965); http://dx.doi.org/10.1063/1.1713941 (4 pages) | Cited 1 time

Online Publication Date: 14 July 2004

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Harmonic generation in a ferrimagnet is enhanced by an increase in the g factor. The physical reasons for this are examined for the case of second‐harmonic generation in sphere and disk samples. Theoretical performance characteristics for a new, narrow‐linewidth, large g‐factor material are compared with those for conventional ferrites.

Absolute Determination of Refractive Indices of Gases at 47.7 Gigahertz

A. C. Newell and R. C. Baird

J. Appl. Phys. 36, 3751 (1965); http://dx.doi.org/10.1063/1.1713942 (9 pages) | Cited 67 times

Online Publication Date: 14 July 2004

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The refractive index of a gas is determined to high accuracy by measuring the change in the resonant frequency when the gas is admitted to a previously evacuated microwave cavity. This measurement was made at a frequency of 47.736 GHz, and is the first such measurement in this frequency range.
The resonant frequency of the cavity is detected by means of a hybrid tee bridge circuit. When the cavity is matched to the waveguide the null at resonance is very sharp, and the frequency can be set to ±5 parts in 108.
Two types of resonant structures were used in this measurement, a conventional cylindrical cavity and a Fabry‐Perot resonator using one plane and one spherical mirror. Measurements were made with both structures on each of the gases, and the agreement between the two was within the limits of experimental error. Because the Fabry‐Perot resonator has no side walls, air could be passed through it much more easily, and it is therefore preferred for use with moist air.
The values of (n−1)×106 for the gases at 0°C and 760 Torr are as follows:
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The primary values of these results lies in their increased accuracy over previous measurements and their confirmation of existing accurate data on these gases. In addition the use of the Fabry‐Perot resonator as a refractometer is demonstrated and its advantages under certain conditions discussed.

On the Refractory Dust Method

Wallace L. Anderson and Gerald Rosen

J. Appl. Phys. 36, 3760 (1965); http://dx.doi.org/10.1063/1.1713943 (6 pages)

Online Publication Date: 14 July 2004

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Detailed theory is developed for the effective absorption of free electrons in a plasma by dust (micron‐size) particles of a chemically inert refractory material. The analysis reveals a sharply defined regime of practical applicability for this ``refractory dust method.''

Injection‐Stimulated Vacancy Reordering in p‐Type Silicon at 76°K

B. L. Gregory

J. Appl. Phys. 36, 3765 (1965); http://dx.doi.org/10.1063/1.1713944 (5 pages) | Cited 22 times

Online Publication Date: 14 July 2004

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Electron injection into p‐type silicon at 76°K has been observed to reduce the lifetime degradation rate due to 60Co gamma irradiation at 76°K. By comparing isochronal annealing data between 76° and 300°K with similar data obtained by Watkins in EPR studies, the lifetime degradation at 76°K is seen to be due primarily to recombination through vacancies. Since the activation energy of motion of silicon vacancies is known to depend strongly on charge state, the injection‐stimulated reduction in degradation rate at 76°K has been related to vacancy reordering which occurs when the injected electron density is sufficiently large to modify the vacancy charge state from neutral (mobile above 160°K) to negative (mobile above 60°K). Quantitative estimates of the vacancy‐reordering rate in the presence of excess electrons show this model to be consistent with the observed phenomena.

General Relationship for the Thermal Oxidation of Silicon

B. E. Deal and A. S. Grove

J. Appl. Phys. 36, 3770 (1965); http://dx.doi.org/10.1063/1.1713945 (9 pages) | Cited 1077 times

Online Publication Date: 14 July 2004

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The thermal‐oxidation kinetics of silicon are examined in detail. Based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived. This relationship is shown to be in excellent agreement with oxidation data obtained over a wide range of temperature (700°–1300°C), partial pressure (0.1–1.0 atm) and oxide thickness (300–20 000 Å) for both oxygen and water oxidants. The parameters A, B, and τ are shown to be related to the physico‐chemical constants of the oxidation reaction in the predicted manner. Such detailed analysis also leads to further information regarding the nature of the transported species as well as space‐charge effects on the initial phase of oxidation.

Electrical Properties of Carrier Generation‐Recombination Centers in Silicon p‐n Junctions

Shuichi Sato, Shinji Kawaji, and Akio Kobayashi

J. Appl. Phys. 36, 3779 (1965); http://dx.doi.org/10.1063/1.1713946 (5 pages) | Cited 2 times

Online Publication Date: 14 July 2004

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The energy levels, the effective capture cross section for holes, and the concentration of the deep traps in the space‐charge layer of ordinary p‐n+ junctions and p‐n+ junctions which contain gold atoms diffused throughout the specimen have been studied by the pulsed‐field technique. The temperature dependence of the current‐voltage characteristics of both types of silicon p‐n junctions has also been studied. That the deep traps studied by the pulsed‐field technique are the Shockley‐Read‐type carrier generation‐recombination centers in the space‐charge layer of the silicon p‐n junctions has been confirmed for both kinds of silicon p‐n junctions by comparing the pulsed‐field data and the activation energy for the reverse current of the diodes. The energy levels and the charge character of the centers as well as the hole lifetime τpo for the ordinary silicon p‐n+ junctions are in good agreement with the data of Sah, Noyce, and Shockley determined from their analysis of the diode characteristics.

Quantum Descriptions of an Infinite Lossless Transmission Line

C. Y. She

J. Appl. Phys. 36, 3784 (1965); http://dx.doi.org/10.1063/1.1713947 (5 pages)

Online Publication Date: 14 July 2004

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An infinite lossless transmission line is quantized by standard canonical procedures. The total Hamiltonian of the system is found to consist of two parts: the unperturbed Hamiltonian of the line H0 which describes the system when there is no signal applied, and the interaction Hamiltonian HI which describes the interaction of the input current i0(t) with the transmission line which governs the signal propagation in a quantum mechanical manner. The density operator ρ(t) of the transmission line is derived and the system is found to be in a state of ``signal plus noise.'' The statistics of a field observation is discussed with the aid of its characteristic function and it is statistically Gaussian. The average value of the local field (voltage or current) which describes the signal as propagating in two opposite directions with the speed of light agrees with the classical result. In the fluctuations of the field, a term due to noncommutativity of field operators (quantum noise) is found to be additive to the thermal noise. A narrow‐band detector with bandwidth B located far away from the sender sees signal, thermal noise, and quantum noise which is equivalent to noise quanta of the carrier frequency arriving at a rate B∕2.

Soft X‐Ray Photoelectric Yield Formulas

W. T. Ogier and Darwin V. Ellis

J. Appl. Phys. 36, 3788 (1965); http://dx.doi.org/10.1063/1.1713948 (3 pages) | Cited 5 times

Online Publication Date: 14 July 2004

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Thick target x‐ray photoelectric yield formulas are derived assuming a simple range for photoelectrons in the target. The predictions are compared with available experimental results for Cu Kα x rays impinging on Al, Cr, and Sn targets at an angle of 70°. Agreement is within a factor of 2 for Al and within 10% for Cr and Sn.

Growth and Dislocation Structure of Single‐Crystal Ga (As1−xPx)

C. M. Wolfe, C. J. Nuese, and N. Holonyak

J. Appl. Phys. 36, 3790 (1965); http://dx.doi.org/10.1063/1.1713949 (12 pages) | Cited 14 times

Online Publication Date: 14 July 2004

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The preparation of single‐crystal GaAsP by halide vapor transport is described. That dislocation free GaAsP can be achieved was verified experimentally for whiskers grown by the vapor‐liquid‐solid method. In the growth of monocrystalline ingots for device purposes, growth mechanics and the resulting crystal habit are strongly influenced by degenerate Zn, Te, and Se doping. Since n‐type crystals require higher supersaturations, single‐crystal growth is easier to obtain with Zn doping.
The as‐grown dislocation structure of ingots with low‐index natural facets is examined by decoration and etching. Typical densities are 5×103 to 106∕cm2. From their simple crystallographic orientations different dislocations are identified. 〈211〉, {111} and 〈100〉, {110} edge dislocations are observed in {110} polygonization walls. Values of mobility and carrier density are evaluated from a device point of view. Laser diodes with threshold currents as low as 3000 A∕cm2 at 33.3% GaP have been obtained from this material.

Magnetic Bubble Trapping in Liquids

M. H. Crozier

J. Appl. Phys. 36, 3802 (1965); http://dx.doi.org/10.1063/1.1713950 (3 pages)

Online Publication Date: 14 July 2004

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In a high magnetic field a liquid is subject to forces due to its para‐ or diamagnetism which contribute to the hydrostatic pressure at each point. It is shown that this contribution may give rise to a local pressure minimum at which bubbles in the liquid will accumulate. This effect is often produced in commercial liquid nitrogen with a standard laboratory electromagnet, because of the paramagnetism caused by a small oxygen content, and can cause experimental problems. The corresponding effect caused by diamagnetism has now been observed in water with a high‐field solenoid operated in the range 165–205 kG, and it is predicted that a bubble trap will likewise occur in liquid helium when a magnet of this design is operated at slightly higher fields. Such an effect can produce irregularities in the results of low‐temperature experiments in high magnetic fields unless bubbles are prevented from forming.

Optical Thickness Measurement of Thin Transparent Films on Silicon

F. Reizman

J. Appl. Phys. 36, 3804 (1965); http://dx.doi.org/10.1063/1.1713951 (4 pages) | Cited 15 times

Online Publication Date: 14 July 2004

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The thickness of thin transparent films on reflecting substrates is determined by an interference technique using a spectrophotometer. The method is rapid, routine, nondestructive, and precise to ±100 Å for layers over 1000 Å thick. An empirical calibration is presented for the case of oxide layers on silicon, avoiding errors due to the dispersion of the oxide.

Rapid Method for Determining Ternary‐Alloy Phase Diagrams

Kurt Kennedy, Tibor Stefansky, Gordon Davy, Victor F. Zackay, and Earl R. Parker

J. Appl. Phys. 36, 3808 (1965); http://dx.doi.org/10.1063/1.1713952 (3 pages) | Cited 20 times

Online Publication Date: 14 July 2004

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A rapid method for determining isothermal sections of ternary‐alloy diagrams has been developed. Three elements are evaporated simultaneously onto a heated substrate in such a way that the composition of the deposit varies from point to point as it does in a ternary‐phase diagram. An isothermal section of the Fe☒Cr☒Ni system prepared by the new technique is compared with one reported in the literature. The applicability of this technique to the preparation of ternary phase diagrams is discussed.

Measurement of Brine Droplet Migration in Ice

J. D. Harrison

J. Appl. Phys. 36, 3811 (1965); http://dx.doi.org/10.1063/1.1713953 (5 pages) | Cited 8 times

Online Publication Date: 14 July 2004

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Migration of NaCl, KF, and KI droplets through ice was measured in the temperature interval from −6° to 0°C in the presence of a 15°C∕cm thermal gradient. Normally the droplets increased in velocity and size as they approached the ice‐water interface. A 30‐μ‐diam droplet migrating at 0.3 μ∕sec at −5°C would be 65 μ in diam and migrating at 1.2 μ∕sec at −☒°C. Special phenomena observed were droplet elongation, diagonal migration, and constant‐velocity migration.

Study of Defect Structures in BeO Single Crystals by X‐Ray Diffraction Topography

S. B. Austerman, J. B. Newkirk, and D. K. Smith

J. Appl. Phys. 36, 3815 (1965); http://dx.doi.org/10.1063/1.1713954 (8 pages) | Cited 11 times

Online Publication Date: 14 July 2004

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X‐ray diffraction topography methods and supplementary optical microscopy were used to examine pyramidal and prismatic BeO crystals grown from lithium molybdate flux. The crystals appeared to have a high degree of perfection in that few dislocation lines were observed. Several specific types of defect structures were observed, however, in most of the crystals studied. The inversion‐twin core structure was visible by image contrast effects from the twin boundary as well as by unequal image contrast on either side of the boundary. A screw dislocation line, possibly a group of many dislocations, commonly was present in the core and ran the full length of the crystal. Growth strata parallel to the active growth surfaces were also present. The topographs also revealed that considerable surface damage can be inflicted by intercrystal abrasion, much of which is removed by thermal annealing.

Lattice Parameters, Thermal Expansion Coefficients, Phase Width, and Perfection of the Structure of GaSb and InSb

M. E. Straumanis and C. D. Kim

J. Appl. Phys. 36, 3822 (1965); http://dx.doi.org/10.1063/1.1713955 (4 pages) | Cited 25 times

Online Publication Date: 14 July 2004

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The lattice parameters of GaSb and InSb, prepared from 99.999% pure elements, were redetermined: a25° of GaSb was 6.09593±0.00004 Å and a25° of InSb was 6.47937±0.00003 Å (with the refraction correction included). Any width of the GaSb and InSb phases could not be detected. The expansion coefficients of the two compounds between 10° and 70°C were (7.75±0.50)×10−6 and (5.37±0.50)×10−6 °C−1, respectively. The experimental density d25 of GaSb was 5.6137±0.0004 and that of InSb 5.7747±0.0004 g⋅cm−3. In both cases, the actual number of molecules n′ per unit cell was very close to 4.0000 (within the limits of error), indicating that the structure of both compounds is sound or perfect.
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