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J. Appl. Phys. 30, 1689 (1959); http://dx.doi.org/10.1063/1.1735037 (3 pages)
Surface‐Dependent Losses in Variable Reactance Diodes
(Received 9 March 1959)
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Add to FacebookSurface effects may seriously degrade the high frequency performance of a semiconductor junction diode used as a variable reactance element without significantly degrading the diode's dc characteristics. Measurements on both p+n and n+p germanium alloy junction diodes have yielded a diode series equivalent resistance component in excess of the calculated integrated bulk resistance. This excess resistance decreased with frequency approximately as 1∕f and for freshly etched devices could be varied by changing the atmosphere surrounding the diode. Those ambients which yielded a maximum surface‐determined junction breakdown voltage also yielded a maximum frequency‐dependent excess resistance. A model which can explain these observations assumes a surface inversion layer contiguous with the alloy junction.
© 1959 The American Institute of Physics
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C. G. B. Garrett and W. H. Brattain, J. Appl. Phys. 27, 299 (1956)JAPIAU000027000003000299000001.
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