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21 Feb 2013

Volume 113, Issue 7, Articles (07xxxx)

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J. Appl. Phys. 113, 073506 (2013); http://dx.doi.org/10.1063/1.4790173 (6 pages)

Uwe Kaiser, Sebastian Gies, Sebastian Geburt, Franziska Riedel, Carsten Ronning, and Wolfram Heimbrodt
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back to top Dielectrics and Ferroelectricity

Evolution of polar order in (1 − x)Pb(In1/2Nb1/2)O3-xPbTiO3 (0 ≤ x ≤ 1) system as investigated by dielectric and Raman spectroscopy

G. Ramesh, V. Subramanian, and V. Sivasubramanian

J. Appl. Phys. 113, 074101 (2013); http://dx.doi.org/10.1063/1.4791572 (7 pages)

Online Publication Date: 15 February 2013

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We have investigated the (1 − x)Pb(In1/2Nb1/2)O3 − xPbTiO3 (PIN-PT) solid solution by Raman scattering and temperature variation of dielectric measurement. The dielectric analysis indicates that the Burn's temperature (TB) raises upto x = 0.30 and then decreases due to the enhancement in the long range ferroelectric order. At x = 0.60, TB coincides with the temperature at which dielectric constant is maximum, Tm, (TB ∼ Tm). It suggests that the polar nanoregions (PNRs) are not present in 0.40PIN-0.60PT. The investigation confirms that PT addition in PIN transforms the PNRs into the macroscopic ferroelectric domains. The composition dependent Raman spectra are used to interpret the evolution of polar order. Qualitative Raman analysis reveals that the changes in the vibration bands are associated with the structural transition from R3m to P4mm at morphotrophic phase region. For the values of x > 0.41, the line-width of all the bands decreases as the concentration of PT increases. The observed two mode behavior in the highest frequency region (800 cm−1) hints the existence of chemical inhomogenetiy at nanometer scale such as the local segregation of Ti and In/Nb-rich regions.
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77.22.Ch Permittivity (dielectric function)
77.80.Dj Domain structure; hysteresis
78.30.Hv Other nonmetallic inorganics
64.75.Nx Phase separation and segregation in solid solutions
77.80.B- Phase transitions and Curie point
77.80.Jk Relaxor ferroelectrics

The electrostatics of Ta2O5 in Si-based metal oxide semiconductor devices

Lior Kornblum, Boris Meyler, Joseph Salzman, and Moshe Eizenberg

J. Appl. Phys. 113, 074102 (2013); http://dx.doi.org/10.1063/1.4792750 (5 pages)

Online Publication Date: 20 February 2013

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Thin dielectric layers are a prominent route to control the band alignments and effective work function of metal oxide semiconductor (MOS) devices. In this work, the electrostatic effects of thin Ta2O5 layers on the band alignments of MOS devices are examined. A detailed analysis of the physical properties of a thick (∼6 nm) Ta2O5 layer is reported. No significant dipoles at Ta2O5-Al2O3 and Ta2O5-SiO2 interfaces are found, as well as any significant charges inside Ta2O5 layers. When positioned at the interface, Ta2O5 is shown to prevent the formation of band offsets between Al2O3-SiO2, resulting in a shift of 1 ± 0.2 eV versus samples without interfacial Ta2O5. The relatively large magnitude of this shift in the current experimental configuration compared to previous works may indicate the participation of interface charges in the band offset. The possible use for these effects in devices is discussed.
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68.60.-p Physical properties of thin films, nonelectronic
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.30.+y Surface double layers, Schottky barriers, and work functions
68.35.Ct Interface structure and roughness
85.30.Tv Field effect devices

Ferroelectric and dielectric properties of ferrite-ferroelectric ceramic composites

Cristina Elena Ciomaga, Alexandra Maria Neagu, Mihai Valentin Pop, Mirela Airimioaei, Sorin Tascu, Giorgio Schileo, Carmen Galassi, and Liliana Mitoseriu

J. Appl. Phys. 113, 074103 (2013); http://dx.doi.org/10.1063/1.4792494 (7 pages)

Online Publication Date: 20 February 2013

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Particulate composites of ferrite and ferroelectric phases with xNiFe2O4 (NF) and (1 − x)Pb0.988(Zr0.52Ti0.48)0.976Nb0.024O3 (where x = 2, 10, 20, 30, 50, 70, and 100 wt. %) were prepared in situ by sol-gel method. The presence of a diphase composition was confirmed by X-ray diffraction while the microstructure of the composites was studied by scanning electron microscopy revealing a good mixing of the two phases and a good densification of the bulk ceramics. The dielectric permittivity shows usual dielectric dispersion behavior with increasing frequency due to Maxwell-Wagner interfacial polarization. AC conductivity measurements made in frequency range 1 Hz-1 MHz suggest that the conduction process is due to mixed polaron hopping. The effect of NF phase concentration on the P-E and M-H hysteresis behavior and dielectric properties of the composites was investigated. At low NF concentration a sharp ferro-paraelectric transition peak can be observed at around 360 °C while for higher NF concentrations a trend to a diffuse phase transition occurs. All the composite samples exhibit typical ferromagnetic hysteresis loops, indicating the presence of ordered magnetic structure.
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77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.80.B- Phase transitions and Curie point
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Electrical measurements of dielectric nonlinearities in ferroelectric bilayer thin films

Pavel Salev, Mandana Meisami-Azad, and Alexei Grigoriev

J. Appl. Phys. 113, 074104 (2013); http://dx.doi.org/10.1063/1.4792601 (6 pages)

Online Publication Date: 20 February 2013

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Frequency dependence of the dielectric response is studied for ferroelectric bilayer thin-film capacitors under a cyclic bias voltage. The approach used in this work enables probing strong dielectric nonlinearities at millisecond and microsecond time scales during polarization switching in thin films. The frequency-dependent changes that are observed in the relative dielectric permittivity of PbZr0.8Ti0.2O3/PbZr0.6Ti0.4O3 and PbZr0.6Ti0.4O3/PbZr0.2Ti0.8O3 epitaxial bilayers without applying the cyclic bias are small in the kHz-to-MHz frequency range. When the bias is applied, a strong frequency dependence of the relative dielectric permittivity is observed during polarization switching. For instance, the permittivity of the PbZr0.6Ti0.4O3/PbZr0.2Ti0.8O3 bilayer changes from εr ≈ 300 at 100 kHz to εr ≈ 1600 at 2 kHz. The observed frequency dependence of the permittivity can be described by [1+mathln(math)]2 that has been proposed for dynamic response in systems involving pinning at two-dimensional domain walls.
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84.32.Tt Capacitors

Room-temperature single phase multiferroic magnetoelectrics: Pb(Fe, M)x(Zr,Ti)(1−x)O3 [M = Ta, Nb]

Dilsom A. Sanchez, Nora Ortega, Ashok Kumar, G. Sreenivasulu, Ram S. Katiyar, J. F. Scott, Donald M. Evans, Miryam Arredondo-Arechavala, A. Schilling, and J. M. Gregg

J. Appl. Phys. 113, 074105 (2013); http://dx.doi.org/10.1063/1.4790317 (7 pages)

Online Publication Date: 20 February 2013

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We describe extensive studies on a family of perovskite oxides that are ferroelectric and ferromagnetic at ambient temperatures. The data include x-ray diffraction, Raman spectroscopy, measurements of ferroelectric and magnetic hysteresis, dielectric constants, Curie temperatures, electron microscopy (both scanning electron microscope and transmission electron microscopy (TEM)) studies, and both longitudinal and transverse magnetoelectric constants α33 and α31. The study extends earlier work to lower Fe, Ta, and Nb concentrations at the B-site (from 15%–20% down to 5%). The magnetoelectric constants increase supralinearly with Fe concentrations, supporting the earlier conclusions of a key role for Fe spin clustering. The room-temperature orthorhombic C2v point group symmetry inferred from earlier x-ray diffraction studies is confirmed via TEM, and the primitive unit cell size is found to be the basic perovskite Z = 1 structure of BaTiO3, also the sequence of phase transitions with increasing temperature from rhombohedral to orthorhombic to tetragonal to cubic mimics barium titanate.
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75.85.+t Magnetoelectric effects, multiferroics
61.66.Fn Inorganic compounds
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.50.Dd Nonmetallic ferromagnetic materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
77.80.Dj Domain structure; hysteresis

Complete set of elastic, dielectric, and piezoelectric constants of [011]C poled rhombohedral Pb(In0.5Nb0.5)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3:Mn single crystals

Xiaoqing Huo, Shujun Zhang, Gang Liu, Rui Zhang, Jun Luo, Raffi Sahul, Wenwu Cao, and Thomas R. Shrout

J. Appl. Phys. 113, 074106 (2013); http://dx.doi.org/10.1063/1.4792661 (5 pages)

Online Publication Date: 20 February 2013

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Mn modified rhombohedral Pb(In0.5Nb0.5)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT:Mn) single crystals poled along [011]C crystallographic direction exhibit a “2R” engineered domain configuration, with macroscopic mm2 symmetry. The complete sets of material constants were determined using combined resonance and ultrasonic methods, and compared to [001]C poled PIN-PMN-PT:Mn crystals. The thickness shear piezoelectric coefficient d15 and electromechanical coupling factor k15 were found to be on the order of ∼3000 pC/N and 0.92, respectively, with longitudinal piezoelectric coefficient d33 and coupling factor k33 being on the order of ∼1050 pC/N and 0.90. Of particular importance is that PIN-PMN-PT:Mn single crystals exhibited high mechanical quality factor Q33 ∼ 1000, comparable to “hard” PZT8 ceramics, which can also be confirmed by the low extrinsic contribution, being ≤2% from the Rayleigh analysis.
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77.65.Bn Piezoelectric and electrostrictive constants
77.84.Ek Niobates and tantalates
77.22.Ej Polarization and depolarization
61.66.Fn Inorganic compounds
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.dq Other elastic constants

Epitaxial PbxZr1−xTiO3 on GaN

E. A. Paisley, H. S. Craft, M. D. Losego, H. Lu, A. Gruverman, R. Collazo, Z. Sitar, and J.-P. Maria

J. Appl. Phys. 113, 074107 (2013); http://dx.doi.org/10.1063/1.4792599 (6 pages)

Online Publication Date: 21 February 2013

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Epitaxial integration of PbxZr1−xTiO3 (PZT) (111) with GaN (0002) presents the possibility of polarity coupling across a functional-oxide/nitride heteropolar interface. This work describes the synthesis and characterization of such thin film heterostructures by magnetron sputtering, with specific attention given to process optimization. Using x-ray diffraction and electrical characterization, the growth of epitaxial PZT (∼250 nm) on GaN and PZT on MgO/GaN stacks was verified. A two-stage growth process was developed for epitaxial PZT with a deposition temperature of 300 °C and an ex-situ anneal at 650 °C, which was effective in mitigating interfacial reactions and promoting phase-pure perovskite growth. Electrical analysis of interdigital capacitors revealed a nonlinear and hysteretic dielectric response consistent with ferroelectric PZT. Piezoresponse force microscopy (PFM) characterization shows clear evidence of ferroelectric switching, and PFM hysteresis loop analysis shows minimal evidence for direct polarity coupling, but suggests that band offsets which accompany the oxide-nitride heterostructures influence switching.
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77.80.Fm Switching phenomena
77.84.Cg PZT ceramics and other titanates
77.55.Px Epitaxial and superlattice films
77.55.hj PZT
77.65.-j Piezoelectricity and electromechanical effects
77.80.Dj Domain structure; hysteresis

Influence of manganese doping to the full tensor properties of 0.24Pb(In1/2Nb1/2)O3-0.47Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 single crystals

Enwei Sun, Rui Zhang, Fengmin Wu, Bin Yang, and Wenwu Cao

J. Appl. Phys. 113, 074108 (2013); http://dx.doi.org/10.1063/1.4792600 (4 pages)

Online Publication Date: 21 February 2013

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Complete sets of elastic, piezoelectric, dielectric, and electromechanical properties of [001]c and [011]c poled pure and 0.5 wt. % manganese-doped 0.24Pb(In1/2Nb1/2)O3-0.47Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 single crystals have been characterized at room temperature. The results indicate that manganese ion substitution in the B-site of perovskite 0.24PIN-0.47PMN-0.29PT single crystals makes the material harder with much higher mechanical quality factor Qm and slight decrease in piezoelectric and dielectric constants. The much improved Qm value (200–900) makes Mn-doped single crystals more suitable for high-power transducer applications than pure single crystals.
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77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization
77.65.Bn Piezoelectric and electrostrictive constants
81.40.Jj Elasticity and anelasticity, stress-strain relations
61.72.up Other materials
62.20.dq Other elastic constants

On the capacitance versus voltage response and tunability of ferroelectrics: A microscopic model

Rolando Placeres Jiménez, José Pedro Rino, Bárbara Fraygola, and José Antonio Eiras

J. Appl. Phys. 113, 074109 (2013); http://dx.doi.org/10.1063/1.4791757 (8 pages)

Online Publication Date: 21 February 2013

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The dielectric permittivity is one of the most important properties of ferroelectrics and is strongly dependent upon the measuring conditions (electric field strength and frequency, external stress, among others). The electric field dependence of the dielectric permittivity is modeled considering ferroelectrics in which domain walls act as a stretched membrane under a homogeneous external electric field E(t) = E0+E1 sin ωt. Considering that the applied field is uniaxial and that the deformed membrane remains plane, it is possible to formulate the membrane vibration problem as a linear boundary value problem, which can be solved analytically. Real and imaginary dependence of the permittivity as a function of the frequency are derived from the analytic solution. By choosing an appropriate relationship between the membrane tension and the applied field, it is possible to describe the observed nonlinear hysteretic dependence of the permittivity under a bias electric field (CV response or tunability). The model was tested via fitting of experimental data from PbZr0.2Ti0.8O3 and PbZr0.53Ti0.43O3 ferroelectrics thin films, with excellent correspondence between model predictions and experimental results. Saturation polarization, coercive field, and remanent polarization, calculated from the CV curve quantitatively agree with the values found from the experimental hysteresis loop. Details about the hysteresis loop reconstruction and membrane characteristic relaxation frequency estimation obtained from CV curve are discussed.
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77.80.Dj Domain structure; hysteresis
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization
77.22.Gm Dielectric loss and relaxation
77.22.Jp Dielectric breakdown and space-charge effects
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