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21 Feb 2013

Volume 113, Issue 7, Articles (07xxxx)

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J. Appl. Phys. 113, 073506 (2013); http://dx.doi.org/10.1063/1.4790173 (6 pages)

Uwe Kaiser, Sebastian Gies, Sebastian Geburt, Franziska Riedel, Carsten Ronning, and Wolfram Heimbrodt
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back to top Device Physics

Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications

L. Sambuco Salomone, J. Lipovetzky, S. H. Carbonetto, M. A. García Inza, E. G. Redin, F. Campabadal, and A. Faigón

J. Appl. Phys. 113, 074501 (2013); http://dx.doi.org/10.1063/1.4792038 (7 pages)

Online Publication Date: 15 February 2013

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Al2O3-based dielectrics are currently considered as promising materials to use in nonvolatile memories. The electron trap density in this material is much higher than in conventional SiO2, being their characteristics critical for the application. Conventional capacitance-voltage (C-V) techniques were used to study the main effects of the electron traps on the electrical characteristics of MOS capacitors with atomic layer deposited Al2O3 as insulating layer. More detailed information about the trapping kinetics was obtained through the study of the constant capacitance voltage transient. Two different types of traps were found. One is responsible for the instabilities observed in C-V measurements, the other has characteristic trapping times three orders longer. A physical model is presented to explain the observed trapping kinetics exhibiting good agreement between experiments and simulations. The energy levels of the studied traps were determined at 2.2 and 2.6 eV below the Al2O3 conduction band, with densities of 2.9 × 1018 cm−3 and 1.6 × 1018 cm−3, respectively.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
84.32.Tt Capacitors
68.55.aj Insulators
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Model of superconducting alternating current bolometers

M. A. Lindeman, P. Khosropanah, and R. A. Hijmering

J. Appl. Phys. 113, 074502 (2013); http://dx.doi.org/10.1063/1.4790146 (8 pages)

Online Publication Date: 15 February 2013

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We present a model of the response of superconducting AC bolometers to signal and noise using parameters and matrix formalism that were previously adopted in modeling DC bolometers and microcalorimeters. The model was developed to investigate novel AC bolometer designs, which have properties not described by previous models. It is applicable to kinetic inductance devices, kinetic inductance thermometers, AC transition edge sensors, and other technologies based on AC read out and frequency mixing. The AC bolometer model includes the temperature and current dependence of both resistive and inductive bolometers and microcalorimeters. The bolometers may be thermal or athermal. The model compactly describes the complex relationships between electrical and thermal signals and it simplifies the associated calculations. This model is useful for characterizing bolometers, predicting the effects of various noise sources on performance and designing new detectors. Additionally, a measurement technique is developed for characterizing these devices.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.25.-j Superconducting devices
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.20.Dt Thermometers
07.20.Fw Calorimeters

Ultraviolet to near infrared response of optically sensitive nonvolatile memories based on platinum nano-particles and high-k dielectrics on a silicon on insulator substrate

V. Mikhelashvili, B. Meyler, Y. Shneider, S. Yofis, J. Salzman, G. Atiya, T. Cohen-Hyams, G. Ankonina, W. D. Kaplan, M. Lisiansky, Y. Roizin, and G. Eisenstein

J. Appl. Phys. 113, 074503 (2013); http://dx.doi.org/10.1063/1.4791761 (6 pages)

Online Publication Date: 15 February 2013

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An optically triggered nonvolatile memory based on platinum nano-particles embedded within a SiO2 and HfO2 dielectric stack on a silicon on insulator (SOI) substrate is presented. The memory cell exhibits a very wide spectral response, from 220 nm to 950 nm; much wider than common photo-detectors fabricated on SOI. It offers several functionalities including a low programming voltage and wide hysteresis of the capacitance-voltage characteristics, an illumination and voltage sweep amplitude dependent hysteresis of the current-voltage characteristics, and plasmonic enhanced, efficient broad-band photo detection.
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84.30.Sk Pulse and digital circuits
84.32.Tt Capacitors

Biparametric analyses of charge trapping in Cd0.9Zn0.1Te based virtual Frisch grid detectors

Sandeep K. Chaudhuri, Kelvin J. Zavalla, Ramesh M. Krishna, and Krishna C. Mandal

J. Appl. Phys. 113, 074504 (2013); http://dx.doi.org/10.1063/1.4793268 (6 pages)

Online Publication Date: 21 February 2013

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Detector grade Cd0.9Zn0.1Te (CZT) single crystals were grown from zone refined Cd, Zn, and Te (∼7 N) precursor materials, using a tellurium solvent method. Detectors with virtual Frisch grid configuration were fabricated using these crystals. I-V measurements revealed low leakage currents at room-temperature, ∼11 nA for one such detector D1 and ∼8 nA for another detector D2 at 1100 V. The spectroscopic performances of the two CZT virtual Frisch grid detectors have been evaluated and compared for high energy gamma ray detection. Detector D1 showed a well-resolved pulse-height spectrum with an energy resolution of ∼1.6% for the 662 keV gamma rays. Detector D2 also showed a distinct 662 keV peak but with a broader pulse-height distribution. A digital biparametric correlation study of the depth of interaction and energy deposited by the 662 keV gamma rays was carried out. A different kind of correlation pattern from that observed normally for hole trapping was noticed in the case of detector D2. Correlation of results from thermally stimulated current measurement studies suggested that the anomalous biparametric correlation pattern was due to the trapping of holes but modified by the virtual Frisch grid effect. The results also suggested that the effect of electron trapping could not be ruled out either. Finally, a digital correction scheme was applied to recover the 137Cs spectrum from the effect of charge loss.
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29.40.Wk Solid-state detectors
07.85.Fv X- and γ-ray sources, mirrors, gratings, and detectors
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