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15 Apr 2012

Volume 111, Issue 8, Articles (08xxxx)

Issue Cover Spotlight Figure

J. Appl. Phys. 111, 084701 (2012); http://dx.doi.org/10.1063/1.3698319 (11 pages)

Xerxes Lopez-Yglesias, Jason M. Gamba, and Richard C. Flagan
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back to top Dielectrics and Ferroelectricity

Low temperature anomalous field effect in SrxBa1-xNb2O6 uniaxial relaxor ferroelectric seen via acoustic emission

E. Dul’kin, S. Kojima, and M. Roth

J. Appl. Phys. 111, 084101 (2012); http://dx.doi.org/10.1063/1.3702888 (4 pages)

Online Publication Date: 16 April 2012

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Sr0.75Ba0.25Nb2O6 [100]-oriented uniaxial tungsten bronze relaxor crystals have been studied by means of dedicated acoustic emission during their thermal cycling in 150–300 K temperature range under dc electric field (E). A 1st order transition in a modulated incommensurate tetragonal phase has been successfully detected at Tmi = 198 K on heating and Tmi = 184 K on cooling, respectively. As field E enhances, a thermal hysteresis gradually narrows and vanishes in the critical point at Eth = 0.31 kV/cm, above which a phase transition becomes to 2nd order. The Tmi(E) dependence looks as a V-shape dip, not similar that previously has been looked as a smeared minimum between both the two polar and nonpolar tetragonal phases near Tm = 220 ÷ 230 K in the same crystals (Dul’kin et al., J Appl. Phys. 110, 044106 (2011)). Due to such a V-shape dip is characteristic for Pb-based multiaxial perovskite relaxor, a rhombohedral phase is waited to be induced by a field E in the critical point temperature range. The emergence of this rhombohedral phase as a crucial evidence of an orthorhombic phase presumably existing within the modulated incommensurate tetragonal phase in tungsten bronze SrxBa1−xNb2O6 relaxor is discussed.
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77.80.Jk Relaxor ferroelectrics
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
64.70.-p Specific phase transitions
82.60.-s Chemical thermodynamics

High-field dielectric properties and Raman spectroscopic investigation of the ferroelectric-to-relaxor crossover in BaSnxTi1−xO3 ceramics

Marco Deluca, Laurentiu Stoleriu, Lavinia Petronela Curecheriu, Nadejda Horchidan, Adelina Carmen Ianculescu, Carmen Galassi, and Liliana Mitoseriu

J. Appl. Phys. 111, 084102 (2012); http://dx.doi.org/10.1063/1.3703672 (13 pages) | Cited 1 time

Online Publication Date: 18 April 2012

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BaSnxTi1−xO3 solid solutions with compositions in the range x = 0–0.20 were studied by combining analysis of the field-induced dielectric and ferroelectric properties with Raman spectroscopic investigations. By combining techniques, the detection of specific features related to the ferroelectric-to-relaxor crossover with increasing Sn content is possible. Detailed tunability analysis of the x = 0.05 composition indicated that multiple components contribute to the dc-field induced permittivity response; these components are active in different temperature and field ranges and could be assigned to a few polarization mechanisms. First order reversal curves (FORC) for the material clearly show a transition from ferroelectric-to-relaxor behavior with increasing x, confirming the conclusions from the Raman and dielectric studies. This was evidenced by the shift of the FORC distribution over coercivities toward zero field values. Raman measurements allow the identification of the separate phases with varying Sn content and temperature, indicating large regions of phase coexistence. The composition x = 0.20 is in a predominantly relaxor state. This is ascribed to a large range of phase coexistence and to the presence of polar nanoregions promoted by Sn substitution on the B site of the perovskite unit cell ABO3.
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77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization
78.30.Hv Other nonmetallic inorganics
77.80.Jk Relaxor ferroelectrics
77.80.B- Phase transitions and Curie point
77.84.Cg PZT ceramics and other titanates

Space charge effect in ultrathin ferroelectric films

Xiaoyan Lu, Wenwu Cao, and Hui Li

J. Appl. Phys. 111, 084103 (2012); http://dx.doi.org/10.1063/1.4704178 (5 pages)

Online Publication Date: 18 April 2012

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Space charge influence on the depolarization field becomes pronounced in nano-scale ferroelectric films in static state. We have studied theoretically the ferroelectric, dielectric, and piezoelectric properties of ultrathin ferroelectric films with the consideration of influence from space charges, surface, incomplete screening, and misfit strain. It is found that space charges accumulated near the surface of the film can modify the depolarization field, which results an enhancement of the polarization in ultrathin films and a persisting polarization even below the critical thickness. The singularities of the dielectric constant and piezoelectric coefficient were all being rounded near the critical thickness.
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77.22.Jp Dielectric breakdown and space-charge effects
77.22.Ej Polarization and depolarization
77.65.Bn Piezoelectric and electrostrictive constants
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Cg PZT ceramics and other titanates

Scaling behavior of dynamic hysteresis in relaxor ferroelectric 0.67Pb(Mg1/3Nb2/3)O3–0.33PbTiO3 ceramics

Y. C. Zhang, C. J. Lu, Z. Z. Yang, W. N. Ye, and L. H. Xia

J. Appl. Phys. 111, 084104 (2012); http://dx.doi.org/10.1063/1.4704383 (4 pages)

Online Publication Date: 18 April 2012

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The scaling behaviors of dynamic ferroelectric hysteresis in the relaxor ferroelectric 0.67Pb(Mg1/3Nb2/3)O3–0.33PbTiO3 (PMNT67/33) ceramics near the morphotropic phase boundary (MPB) and other PMNT systems out of MPB region were investigated. The scaling relation of hysteresis area 〈A〉 against frequency f and field amplitude E0 for minor loops takes the form of 〈A〉∝f−0.2391E04.8779; while for the saturated loops, it is 〈A〉∝f 0.0401E00.5722. The scaling relations of PMNT67/33 ceramics are significantly different from those of other ferroelectrics, and the results of the analysis indicate that domain reversal in it is much more sensitive to the change of E0 at low electric field and responses more quickly to f at high electric field than other normal ferroelectrics. The coexistence of rhombohedral (R), monoclinic (M) and tetragonal (T) phases near the MPB and the polar nanoregions seems to play the key role in the dynamic behavior of the domain reversal in relaxor PMNT67/33 ceramics.
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77.80.Dj Domain structure; hysteresis
77.84.Cg PZT ceramics and other titanates
77.84.Ek Niobates and tantalates
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Effect of doping on polarization profiles and switching in semiconducting ferroelectric thin films

Vivek B. Shenoy, Yu Xiao, and Kaushik Bhattacharya

J. Appl. Phys. 111, 084105 (2012); http://dx.doi.org/10.1063/1.3702849 (14 pages)

Online Publication Date: 19 April 2012

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This paper proposes a theory to describe the polarization and switching behavior of ferroelectrics that are also wide-gap semiconductors. The salient feature of our theory is that it does not make any a priori assumption about either the space charge distribution or the polarization profile. The theory is used to study a metal-ferroelectric-metal capacitor configuration, where the ferroelectric is n-type doped. The main result of our work is a phase diagram as a function of doping level and thickness that shows different phases, namely, films with polarization profiles that resemble that of undoped classical ferroelectrics, paraelectric, and a new head-to-tail domain structure. We have identified a critical doping level, which depends on the energy barrier in the Landau energy and the built-in potential, which is decided by the electronic structures of both the film and the electrodes. When the doping level is below this critical value, the behavior of the films is almost classical. We see a depleted region, which extends through the film when the film thickness is very small, but is confined to two boundary layers near the electrodes for large film thickness. When the doping level is higher than the critical value, the behavior is classical for only very thin films. Thicker films at this doping level are forced into a tail-to-tail configuration with three depletion layers, lose their ferroelectricity, and may thus be described as nonlinear dielectric or paraelectric. For films which are doped below the critical level, we show that the field required for switching starts out at the classical coercive field for very thin films, but gradually decreases.
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77.80.Fm Switching phenomena
77.84.Cg PZT ceramics and other titanates
77.22.Jp Dielectric breakdown and space-charge effects
81.30.Dz Phase diagrams of other materials
71.70.Di Landau levels
71.20.Nr Semiconductor compounds

Structure, magnetic, and dielectric properties of La2Ni(Mn1-xTix)O6 ceramics

W. Z. Yang, X. Q. Liu, Y. Q. Lin, and X. M. Chen

J. Appl. Phys. 111, 084106 (2012); http://dx.doi.org/10.1063/1.4704392 (9 pages) | Cited 2 times

Online Publication Date: 19 April 2012

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In the present work, the effects of Ti-substitution for Mn upon the structure, magnetic and dielectric properties in La2NiMnO6 ceramics have been investigated. Ti-substitution for Mn strongly affects the crystallographic, magnetic, and dielectric properties of La2NiMnO6 double perovskite ceramics. Refinements of the x-ray diffraction data show that all compositions investigated here have the monoclinic perovskite structure in space group P21/n with a partially ordered arrangement of Ni and Mn/Ti cations. The magnetic nature of the present ceramics with x up to 0.8 is ferromagnetic (FM), while that is antiferromagnetic for La2NiTiO6. The Curie temperature and the spontaneous magnetization, or FM component, decrease with increasing x. These ferromagnetic states are attributed to the Ni2+-O-Mn4+ superexchange interaction. The dielectric constant monotonically decreases and the relaxor-like behavior is suppressed with x. The similar variation tendency of magnetic and dielectric properties with increasing x can be explained simply by the dilution effect.
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61.66.Fn Inorganic compounds
75.50.Dd Nonmetallic ferromagnetic materials
75.50.Ee Antiferromagnetics
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.30.Et Exchange and superexchange interactions
77.22.Ch Permittivity (dielectric function)

Enhanced dielectric and piezoelectric properties of xBaZrO3-(1−x)BaTiO3 ceramics

Liang Dong, Donald S. Stone, and Roderic S. Lakes

J. Appl. Phys. 111, 084107 (2012); http://dx.doi.org/10.1063/1.4705467 (10 pages) | Cited 2 times

Online Publication Date: 24 April 2012

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xBaZrO3-(1−x)BaTiO3 solid solutions (x = 0, 0.04, 0.06, 0.08, 0.12, and 0.18) synthesized via conventional solid state reaction method exhibit piezoelectric coefficients comparable to those of “hard” PZT-8, PZT-4, and even “soft” PZT-5 A. Doping also improves the poling efficiency of xBaZrO3-(1−x)BaTiO3 ceramics. Study of temperature dependence of the dielectric and piezoelectric properties reveal the following. Doping lowered the Curie point but raised the temperatures of the other two transformations. The diffused phase transition behavior has been enhanced with increasing content of BaZrO3, but x ≤ 0.18 is not enough to show a relaxor behavior. Piezoelectric responses show peaks at transformation temperatures and exhibit the best stability in the orthorhombic phase. Significant improvement in room temperature piezoelectric and electromechanical responses (d33 = 420pC/N, d31 = −138pC/N, and kp = 49%) comparable to PZT-5 A is achieved at a composition of x = 0.06 (1400 °C 100 h sintered), which brings the rhombohedral-orthorhombic transition to the ambient temperature. Enhanced piezoelectric properties are mainly attributed to a series of microscopic phase transformations due to the presence of internal structural gradient. Other possible contributions such as domain structures and constrained negative stiffness effect have also been discussed.
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77.65.-j Piezoelectricity and electromechanical effects
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
77.80.B- Phase transitions and Curie point

Growth of (111)-oriented BaTiO3–Bi(Mg0.5Ti0.5)O3 epitaxial films and their crystal structure and electrical property characterizations

Hidenori Tanaka, Mohamed-Tahar Chentir, Tomoaki Yamada, Shintaro Yasui, Yoshitaka Ehara, Keisuke Yamato, Yuta Kashiwagi, Chua Ngeah Theng, Junling Wang, Soichiro Okamura, Hiroshi Uchida, Takashi Iijima, Satoshi Wada, and Hiroshi Funakubo

J. Appl. Phys. 111, 084108 (2012); http://dx.doi.org/10.1063/1.4704384 (5 pages)

Online Publication Date: 24 April 2012

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Epitaxial (1−x)BaTiO3−xBi(Mg0.5Ti0.5)O3 films with x = 0 − 0.9 were grown on (111)cSrRuO3//(111)SrTiO3 substrates by pulsed laser deposition (PLD). Plotting the temperature where dielectric constant reaches a maximum {T[ɛr(max.)]} versus Bi(Mg0.5,Ti0.5)O3 content present minimum at x = 0.1. On the other hand, the remanent polarization (Pr) and the effective transverse piezoelectric constant [d33(eff.)] showed minimum at 0.1 and 0.2, respectively, but increased with the increase of x in (1−x)BaTiO3−xBi(Mg0.5Ti0.5)O3 above these values. These results show the simultaneous increase of T[ɛr(max.)] and d33(eff.) for the films above x = 0.2 that normally showed treads off characteristics.
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68.55.A- Nucleation and growth
77.22.Ch Permittivity (dielectric function)
77.65.Bn Piezoelectric and electrostrictive constants
77.55.-g Dielectric thin films
81.15.Fg Pulsed laser ablation deposition
77.22.Ej Polarization and depolarization

Controlled synthesis and electromagnetic performance of hollow microstructures assembled of tetragonal MnO2 nano-columns

Yuping Duan, Hui Jing, Zhuo Liu, Shuqing Li, and Guojia Ma

J. Appl. Phys. 111, 084109 (2012); http://dx.doi.org/10.1063/1.4705516 (8 pages)

Online Publication Date: 25 April 2012

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Hollow microstructures assembled of tetragonal MnO2 nano-columns have been synthesized through a facile hydrothermal method with the introduction of iron ions. The obtained samples were characterized by XRD, SEM, and vector network analysis. Results reveal that the presence of Fe3+ ions leads to transformation of phase structure from α-MnO2 to a mixture of ɛ-MnO2 and α-MnO2, and it is essential to include Fe3+ ions for the formation of the hollow MnO2 microstructures. The formation mechanism was investigated and proposed in detail. Fe-doped MnO2 exhibits decreased dielectric loss, but increased magnetic loss compared with the pure one.
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81.07.Bc Nanocrystalline materials
77.22.Gm Dielectric loss and relaxation
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
75.75.Cd Fabrication of magnetic nanostructures

In-situ neutron diffraction study of Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystals under uniaxial mechanical stress

Qian Li, Yun Liu, Vladimir Luzin, Andrew J. Studer, Yuhui Wan, Zhengrong Li, Lasse Norén, Ray L. Withers, and Zhuo Xu

J. Appl. Phys. 111, 084110 (2012); http://dx.doi.org/10.1063/1.4706563 (6 pages) | Cited 1 time

Online Publication Date: 26 April 2012

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In this paper, we report the phase transition behavior of ternary relaxor ferroelectric single crystals of 0.25Pb(In1/2Nb1/2)O3-0.44Pb(Mg1/3Nb2/3)O3-0.31PbTiO3 subject to a uniaxial mechanical stress up to 400 MPa. The resultant in situ neutron diffraction data are interpreted in terms of the polarization rotation theory and provide direct structural evidence for the stress-induced polarization rotation pathway deduced from studies of macroscopic physical properties under stress. It is suggested that an intermediate, metastable orthorhombic phase is induced above a critical pressure of ∼75 MPa. This critical stress level appears to be unaffected by sample poling although the ground states (at zero stress) for the poled and unpoled crystals are different. The critical stress level, however, does decrease with increasing temperature. The elastic behavior of the intermediate phases is also studied based on a calculation of the associated lattice strains.
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81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
81.40.Jj Elasticity and anelasticity, stress-strain relations
81.40.Lm Deformation, plasticity, and creep
62.20.dq Other elastic constants
62.20.F- Deformation and plasticity
64.70.K- Solid-solid transitions

Dielectric properties and relaxation behavior of the indium doped cadmium zinc telluride single crystal

Qiang Li, Huiqing Fan, Wanqi Jie, Biaolin Peng, and Changbai Long

J. Appl. Phys. 111, 084111 (2012); http://dx.doi.org/10.1063/1.4705401 (5 pages)

Online Publication Date: 30 April 2012

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Low frequency dielectric dispersion behavior of the indium doped cadmium zinc telluride single crystal has been investigated. The temperature dependent of dielectric loss shows a broadening peak at high temperatures, which is attributed to thermally activated relaxation process. The large dielectric permittivity can be attributed to the influence of the dc conductivity and the predominance of the dc conduction in low frequency region overshadows the true behavior of the imaginary part of dielectric permittivity. The contribution of dc conduction and ac conduction has also been studied. A polaron theory indicates that the dielectric relaxation of the indium doped cadmium zinc telluride crystal at high temperature is associated with the hopping localized cadmium vacancies and telluride antisites defects. The hopping energy increases from 1.204 eV at 499 K to 1.267 eV at 534 K monotonically, which is close to the thermal activation energy 1.541 eV and dc conductivity activation energy 1.239 eV.
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77.22.Gm Dielectric loss and relaxation
72.20.Ee Mobility edges; hopping transport
77.22.Ch Permittivity (dielectric function)
61.72.jd Vacancies
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