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J. Appl. Phys. 111, 07A324 (2012); http://dx.doi.org/10.1063/1.3676428 (3 pages)

Fabrication of L10-MnAl perpendicularly magnetized thin films for perpendicular magnetic tunnel junctions

Masaki Hosoda1, Mikihiko Oogane1, Miho Kubota1, Takahide Kubota2, Haruaki Saruyama1, Satoshi Iihama1, Hiroshi Naganuma1, and Yasuo Ando1

1Department of Applied Physics, Graduate school of Engineering, Tohoku University, Aza-aoba 6-6-05, Aramaki, Aoba-ku, Sendai 980-8579, Japan
2WPI Advanced Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan

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(Received 23 September 2011; accepted 11 November 2011; published online 16 February 2012)

Structural and magnetic properties of MnAl thin films with different composition, growth temperature, and post-annealing temperature were investigated. The optimum condition for fabrication of L10-MnAl perpendicularly magnetized thin film deposited on Cr-buffered MgO single crystal substrate was revealed. The results of x ray diffraction indicated that the MnAl films annealed at proper temperature had a (001)-orientation and L10-ordered structure. The L10-ordered films were perpendicularly magnetized and had a large perpendicular anisotropy. In addition, low surface roughness was achieved. For the optimized fabrication condition, the saturation magnetization Ms of 600 emu/cm3 and perpendicular magnetic anisotropy Ku of 1.0 × 107 erg/cm3 was obtained using the Mn48Al52 target at deposition temperature of 200 °C and post-annealing temperature of 450 °C.

© 2012 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENTAL METHOD
  3. EXPERIMENTAL RESULTS
  4. SUMMARY

KEYWORDS, PACS, and IPC

PACS

  • 81.05.Bx

    Metals, semimetals, and alloys

  • 81.40.Gh

    Other heat and thermomechanical treatments

  • 68.35.bd

    Metals and alloys

  • 75.30.Gw

    Magnetic anisotropy

  • 75.70.Ak

    Magnetic properties of monolayers and thin films

  • 75.70.Cn

    Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

International Patent Classification (IPC)

ARTICLE DATA

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

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