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J. Appl. Phys. 111, 07A318 (2012); http://dx.doi.org/10.1063/1.3673853 (3 pages)

Tailoring magnetocrystalline anisotropy of FePt by external strain

Pavel V. Lukashev1,2, Nathan Horrell3,2, and Renat F. Sabirianov3,2

1Department of Physics and Astronomy, University of Nebraska - Lincoln, Lincoln, Nebraska 68588-0299, USA
2Nebraska Center for Materials and Nanoscience, University of Nebraska - Lincoln, Lincoln, Nebraska 68588-0299, USA
3Department of Physics, University of Nebraska at Omaha, Omaha, Nebraska 68182-0266, USA

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(Received 22 September 2011; accepted 14 October 2011; published online 16 February 2012)

We propose using strain assisted reduction in anisotropy of FePt to control magnetization reversal in the writing on the magnetic storage devices. Our first-principles calculations show 21% decrease of the magnetocrystalline anisotropy energy (MAE) with application of 1.5% tensile biaxial strain. The reduction of MAE is primarily due to the change of the c/a ratio and to some extent due to the increase in volume. We propose building bilayer (or heterostructure) of FePt and piezoelectric film. This system is expected to allow the control of anisotropy constant by applying electric field to the system. Finally, we discuss the possibility of forming medium using bi-layer of FePt and soft magnetic material with the gradient of anisotropy constant.

© 2012 American Institute of Physics

KEYWORDS, PACS, and IPC

PACS

International Patent Classification (IPC)

  • C22C38/00

    Ferrous alloys, e.g. steel alloys

  • H01F1/00

    Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties

  • H01F1/12

    Of soft-magnetic materials

  • H01F10/00

    Thin magnetic films, e.g. of one-domain structure

  • H01F13/00

    Apparatus or processes for magnetising or demagnetising

ARTICLE DATA

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

For access to fully linked references, you need to log in.
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    R. Skomski, T. A. George, and D. J. Sellmyer, J. Appl. Phys. 103, 07F531 (2008)JAPIAU00010300000707F531000001.

    S. D. Willoughby, J. M. MacLaren, T. Ohkubo, S. Jeong, M. McHenry, D. E. Laughlin, S.-J. Choi, and S.-J. Kwon, J. Appl. Phys. 91, 8822 (2002)JAPIAU000091000010008822000001.

    H. Zeng, R. Sabirianov, O. Mryasov, M. L. Yan, K. Cho, and D. J. Sellmyer, Phys. Rev. B 66, 184425 (2002).


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