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Journal of Applied Physics / Volume 111 / Issue 7 / PROCEEDINGS OF THE 56TH ANNUAL CONFERENCE ON MAGNETISM AND MAGNETIC MATERIALS / Soft Magnetic Materials

J. Appl. Phys. 111, 07A308 (2012); http://dx.doi.org/10.1063/1.3671430 (3 pages)

Well-isolated L10 FePt–SiNx–C nanocomposite films with large coercivity and small grain size

K. F. Dong1, H. H. Li1, Y. G. Peng2, G. Ju2, G. M. Chow1, and J. S. Chen1

1Department of Materials Science and Engineering, National University of Singapore, Singapore 117576, Singapore
2Seagate Technology, Fremont, California 94538, USA

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(Received 27 September 2011; accepted 18 October 2011; published online 14 February 2012)

FePt–SiNx–C films on TiN/CrRu/glass substrate with large coercivity, (001) texture, and small isolated grains were obtained by co-sputtering FePt, Si3N4, and C targets at 380 °C. It was found that when C was doped into the FePt–SiNx films, the out-of-plane coercivity increased while the small in-plane coercivity remained unchanged. Grain size decreased and grain size distribution became more uniform with increasing the C doping concentration. The x-ray photoelectron spectroscopy (XPS) depth profile showed a uniform depth distribution of Si in the FePt layer. The Si2p XPS spectrum implied the existence of Fe–Si bonds, indicating that SiNx was located at the FePt grain boundaries and was stable against diffusion to the surface, thus favoring grain isolation. Well-isolated FePt (001) granular films with coercivity higher than 21.5 kOe and an average grain size of 5.6 nm were obtained by doping 40 vol. % of SiNx and 20 vol. % of C.

© 2012 American Institute of Physics

KEYWORDS, PACS, and IPC

Keywords

carbon, coercive force, doping profiles, grain boundaries, grain size, iron compounds, nanocomposites, silicon compounds, sputter deposition, thin films, X-ray photoelectron spectra

PACS

  • 68.55.A-

    Nucleation and growth

  • 61.72.Mm

    Grain and twin boundaries

  • 81.15.Cd

    Deposition by sputtering

  • 81.16.-c

    Methods of micro- and nanofabrication and processing

  • 82.80.Pv

    Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

  • 85.40.Ry

    Impurity doping, diffusion and ion implantation technology

International Patent Classification (IPC)

  • B82B1/00

    Nano-structures

  • B82B3/00

    Manufacture or treatment of nano-structures

  • C23C14/34

    Sputtering

  • H01F1/00

    Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3671430

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    Y. K. Takahashi, T. Koyama, M. Ohnuma, T. Ohkubo, and K. Hono, J. Appl. Phys. 95, 2690 (2007)JAPIAU000095000005002690000001.

    J. S. Chen, B. C. Lim, J. F. Hu, B. Liu, G. M. Chow, and G. Ju, Appl. Phys. Lett. 91, 132506 (2007)APPLAB000091000013132506000001.

    C. L. Platt, K. W. Wierman, E. B. Svedberg, R. V. D. Veerdonk, J. K. Howard, A. G. Roy, and D. E. Laughlin, J. Appl. Phys. 92, 6104 (2002)JAPIAU000092000010006104000001.

    H. H. Li, K. F. Dong, Y. G. Peng, G. Ju, G. M. Chow, and J. S. Chen, J. Appl. Phys. 110, 043911 (2011)JAPIAU000110000004043911000001.


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