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J. Appl. Phys. 111, 07A303 (2012); http://dx.doi.org/10.1063/1.3670511 (3 pages)

Structural studies of high-Ku metastable CoPt thin films with long-range order

Fu-Te Yuan1, Jen-Hwa Hsu1, Yi-Hung Lin2, S. N. Hsiao3, and H. Y. Lee3

1Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei, 106, Taiwan
2Department of Materials Science and Engineering, National Taiwan University, Taipei, 106, Taiwan
3National Synchrotron Radiation Research Center (NSRRC), Hsinchu, 300, Taiwan

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(Received 8 September 2011; accepted 12 October 2011; published online 8 February 2012)

The symmetries of CoPt thin films in different phases, including disordered A1, ordered L11, and L10 were examined by making measurements along the (10.1) diffraction rod. The films were deposited by sputtering on MgO(111) substrates at different temperatures (Ta). The stacking sequence of close-packed atomic planes in 50 nm-thick samples with Ta ≥ 200 °C was identified as ABCABC, indicating that the distribution of defects in the film was random, so the symmetry was preserved with increasing Ta. In the RT-prepared film, a considerable amount of (∼62.9 vol.%) disordered CoPt with hexagonal symmetry was detected, vanishing as Ta increased. Defect-induced modification of symmetry was observed in the L11 film as its thickness was reduced to 10 nm. A pseudo-hcp component of around 7.1 vol.% was present in the film, as a result of the periodic distribution of defects. The defects in the structure may also explain the broadened magnetic alignment.

© 2012 American Institute of Physics

KEYWORDS, PACS, and IPC

PACS

  • 68.55.Ln

    Defects and impurities: doping, implantation, distribution, concentration, etc.

  • 81.15.Cd

    Deposition by sputtering

  • 77.55.F-

    High-permittivity capacitive films

International Patent Classification (IPC)

ARTICLE DATA

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

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