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Journal of Applied Physics / Volume 111 / Issue 6 / ARTICLES / Structural, Mechanical, Thermodynamic, and Optical Properties of Condensed Matter

J. Appl. Phys. 111, 063522 (2012); http://dx.doi.org/10.1063/1.3695458 (6 pages)

Multiexcitonic emission from single elongated InGaAs/GaAs quantum dots

Ł. Dusanowski1, G. Sęk1, A. Musiał1, P. Podemski1, J. Misiewicz1, A. Löffler2, S. Höfling2, S. Reitzenstein2, and A. Forchel2

1Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, Wrocław 50-370, Poland
2Technische Physik, University of Würzburg, Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, Am Hubland, Würzburg D-97074, Germany

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(Received 29 December 2011; accepted 23 February 2012; published online 27 March 2012)

In this work, we present both experimental data and simulations of multiexcitonic emission spectra of single self-assembled elongated In0.3Ga0.7As/GaAs quantum dots. The emission spectra reveal an unusual evolution with the increased excitation power density. First, a biexciton line appears simultaneously with its low energy sideband, the origin of which has already been postulated previously and related to the interaction of a quantum dot biexciton with excitons generated in the surrounding wetting layer. A further increase of the excitation causes a disappearance of the exciton line accompanied with a transformation of the biexciton sharp line and its sideband into a redshifting broad emission band. The latter recalls a typical feature of the transition from excitonic emission into electron-hole plasma called Mott transition, which is possible to occur in wire-like structures under the conditions of very high carrier densities. However, we propose an alternative explanation and show that this behavior can be well explained based on a multilevel rate equation model, indicating that such a dependence of the emission spectra is a fingerprint of a formation of multiexcitonic states. Further, we discuss the importance of various quantum system parameters as the radiative lifetimes or spectral linewidths.

© 2012 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENTAL DETAILS
  3. RESULTS AND DISCUSSION
    1. General properties of the system
    2. Single-dot emission spectra
    3. Model of multiexciton emission
    4. Results of simulations and comparison to the experiment
  4. CONCLUSION

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KEYWORDS, PACS, and IPC

Keywords

biexcitons, carrier density, elongation, gallium arsenide, III-V semiconductors, indium compounds, metal-insulator transition, photoluminescence, radiative lifetimes, red shift, self-assembly, semiconductor growth, semiconductor quantum dots, spectral line breadth, wetting

PACS

International Patent Classification (IPC)

  • B82B3/00

    Manufacture or treatment of nano-structures

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3695458

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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