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15 Feb 2012

Volume 111, Issue 4, Articles (04xxxx)

J. Appl. Phys. 111, 043501 (2012); http://dx.doi.org/10.1063/1.3680881 (8 pages)

Gregory J. McGraw and Stephen R. Forrest

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Publisher’s Note: “Effect of nickel contamination on high carrier lifetime n-type crystalline silicon” [J. Appl. Phys. 111, 033702 (2012)]

Yohan Yoon, Bijaya Paudyal, Jinwoo Kim, Young-Woo Ok, Prashant Kulshreshtha, Steve Johnston, and George Rozgonyi

J. Appl. Phys. 111, 049901 (2012); http://dx.doi.org/10.1063/1.3689822 (1 page)

Online Publication Date: 23 February 2012

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99.10.Fg	Publisher's note
72.20.Jv	Charge carriers: generation, recombination, lifetime, and trapping

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